CSDD-25M CSDD-25N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSDD-25M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak Non-Repetitive Surge Current, t=8.3ms SYMBOL CSDD-25M CSDD-25N UNITS VDRM, VRRM IT(RMS) 600 800 V 25 A ITSM ITSM 260 A 250 A I2t Value for Fusing, t=10ms I2t 310 A2s Peak Gate Power, tp=10μs PGM PG(AV) IFGM 40 W 1.0 W 4.0 A Peak Non-Repetitive Surge Current, t=10ms Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs VFGM VRGM 16 V 5.0 V Critical Rate of Rise of On-State Current di/dt 100 A/μs Operating Junction Temperature -40 to +125 °C Thermal Resistance TJ Tstg ΘJA Thermal Resistance ΘJC Peak Reverse Gate Voltage, tp=10μs Storage Temperature -40 to +150 °C 60 °C/W 1.3 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IDRM, IRRM IDRM, IRRM IGT Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω MIN TYP MAX UNITS 10 μA 4.2 4.0 30 mA mA IH VGT IT=100mA 12.5 50 mA 0.65 1.50 V VTM VD=12V, RL=10Ω ITM=50A, tp=380μs dv/dt VD=2 /3 VDRM, TC=125°C 1.80 200 V V/μs R2 (17-February 2010) CSDD-25M CSDD-25N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R2 (17-February 2010) w w w. c e n t r a l s e m i . c o m