CZT2000 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation SYMBOL UNITS VCBO VCES 200 V 200 V VEBO IC 10 V 600 mA 2.0 W -65 to +150 °C 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO IEBO VCB=180V VBE=10V 500 nA 100 nA BVCES IC=1.0mA IC=20mA, IB=25µA IC=80mA, IB=40µA IC=160mA, IB=100µA 0.9 V Operating and Storage Junction Temperature Thermal Resistance VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) PD TJ, Tstg ΘJA 200 hFE VCE=5.0V, IC=160mA VCE=5.0V, IC=100µA 3000 hFE VCE=5.0V, IC=10mA 3000 hFE VCE=5.0V, IC=160mA 3000 V 1.1 V 1.2 V 2.0 V R6 (1-March 2010) CZT2000 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R6 (1-March 2010) w w w. c e n t r a l s e m i . c o m