CZT751 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT751 type is a PNP Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL UNITS VCBO VCEO 80 V 60 V VEBO IC 5.0 V 2.0 A PD TJ, Tstg 2.0 W -65 to +150 °C ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=80V 100 nA IEBO VEB=4.0V 100 nA BVCBO IC=100µA 80 V BVCEO IC=10mA 60 V BVEBO IE=10µA 5.0 VCE(SAT) VCE(SAT) VBE(SAT) IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=1.0A, IB=100mA VBE(ON) VCE=2.0V, IC=1.0A hFE hFE hFE VCE=2.0V, IC=50mA VCE=2.0V, IC=500mA VCE=2.0V, IC=1.0A 75 hFE VCE=2.0V, IC=2.0A 40 fT VCE=5.0V, IC=50mA, f=100MHz 75 Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance V 0.3 V 0.5 V 1.2 V 1.0 V 75 75 MHz R4 (1-March 2010) CZT751 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m