NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 80 MHz IC=100mA, VCE=10V f=100MHz Output Capacitance Cobo 11 pF VCB=20V, f=1MHz Switching Times ton toff 100 5300 ns ns IC=250mA, IB1=25mA IB2=25mA, VCC=50V 200 200 25 15 100 100 15 IC=10mA, VCE=5V IC=500mA, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX857 ISSUE 1 APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 330 Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 5 A Continuous Collector Current IC 3 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-304 PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 330 475 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 330 475 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 300 350 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=300V VCB=300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=300V VCB=300V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 80 140 170 100 140 200 250 mV mV mV mV IC=0.5A, IB=50mA* IC=1A, IB=100mA* IC=2A, IB=200mA* IC=3A, IB=600mA* Base-Emitter Saturation Voltage VBE(sat) 870 1000 mV IC=2A, IB=200mA* 3-303 MAX. NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 80 MHz IC=100mA, VCE=10V f=100MHz Output Capacitance Cobo 11 pF VCB=20V, f=1MHz Switching Times ton toff 100 5300 ns ns IC=250mA, IB1=25mA IB2=25mA, VCC=50V 200 200 25 15 100 100 15 IC=10mA, VCE=5V IC=500mA, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX857 ISSUE 1 APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Ptot= 1.2 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 330 Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 5 A Continuous Collector Current IC 3 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-304 PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 330 475 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 330 475 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 300 350 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE=100µA Collector Cut-Off Current ICBO 50 1 µA nA VCB=300V VCB=300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 µA nA VCB=300V VCB=300V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 80 140 170 100 140 200 250 mV mV mV mV IC=0.5A, IB=50mA* IC=1A, IB=100mA* IC=2A, IB=200mA* IC=3A, IB=600mA* Base-Emitter Saturation Voltage VBE(sat) 870 1000 mV IC=2A, IB=200mA* 3-303 MAX. ZTX857 TYPICAL CHARACTERISTICS 1.6 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 300 1.4 1.2 1.0 0.01 0.1 VCE=10V VCE=2V 0.6 100 0.4 0.2 10 1 200 0.8 0 0.001 0 IC - Collector Current (Amps) 0.01 0.1 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 1.5 VBE - (Volts) VBE(sat) - (Volts) 2.0 IC/IB=10 IC/IB=50 1.0 0.5 IC - Collector Current (Amps) 10 0.001 0.1 0.01 1 10 0.01 0.1 1.0 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test at Tamb=25°C 1 0.1 1.5 0.5 0.0001 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-305 hFE - Typical Gain hFE - Normalised Gain VCE(sat) - (Volts) 0.8 10