DIODES ZXMP10A18KTC

ZXMP10A18K
100V DPAK P-channel enhancement mode MOSFET
Summary
RDS(on) (⍀)
ID (A)
0.150 @ VGS= -10V
-5.9
0.190 @ VGS= -6V
-5.2
V(BR)DSS
-100
Description
D
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
G
Features
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
DPAK package
S
D
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
D
G
S
Pinout - top view
Ordering information
Device
ZXMP10A18KTC
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
13
16
2,500
Device marking
ZXMP
10A18
Issue 1 - August 2006
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ZXMP10A18K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-100
V
Gate-source voltage
VGS
± 20
V
ID
-5.9
A
Continuous drain current @ VGS= 10V; Tamb =25°C(b)
@ VGS= 10V; Tamb =70°C(b)
-4.7
@ VGS= 10V; Tamb =25°C(a)
-3.8
IDM
-21.1
A
IS
-10
A
Pulsed source current (body diode)(c)
ISM
-21.1
A
Power dissipation at Tamb = 25°C(a)
PD
4.3
W
34.4
mW/°C
10.2
W
81.3
mW/°C
2.17
W
17.4
mW/°C
Tj, Tstg
-55 to +150
°C
Pulsed drain current(c)
Continuous source current (body diode)(b)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(b)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
R⍜JA
29
°C/W
Junction to ambient(b)
R⍜JA
12.3
°C/W
Junction to ambient(d)
R⍜JA
57.6
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXMP10A18K
Thermal characteristics
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ZXMP10A18K
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-source breakdown voltage V(BR)DSS
-100
Typ.
Max.
Unit
Conditions
Static
V
ID= -250␮A, VGS=0V
Zero gate voltage drain current
IDSS
-1
␮A
VDS= -100V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
-4.0
V
ID= -250␮A, VDS=VGS
Static drain-source on-state
resistance (*)
RDS(on)
0.150
0.190
⍀
VGS= -10V, ID= -2.8A
VGS= -6V, ID= -2.4A
Forward transconductance(*)(‡)
gfs
6.0
S
VDS= -15V, ID= -2.8A
Input capacitance
Ciss
1055
pF
Output capacitance
Coss
90
pF
VDS= -50V, VGS=0V
f=1MHz
Reverse transfer capacitance
Crss
76
pF
Turn-on-delay time
td(on)
4.9
ns
Rise time
tr
6.8
ns
Turn-off delay time
td(off)
33.9
ns
Fall time
tf
17.9
ns
Total gate charge
Qg
26.9
nC
Gate-source charge
Qgs
3.9
nC
Gate drain charge
Qgd
10.2
nC
Diode forward voltage(*)
VSD
-0.85
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
-2.0
Dynamic(‡) (3)
Switching (†) (‡)
VDD= -50V, ID= -1A
RG=6.0⍀, VGS= -10V
VDS= -50V, VGS= -10V
ID= -2.8A
Source-drain diode
-0.95
V
Tj=25°C, IS= -3.5A,
VGS=0V
49
ns
107
nC
Tj=25°C, IS= -2.8A,
di/dt=100A/ms
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - August 2006
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ZXMP10A18K
Typical characteristics
Issue 1 - August 2006
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ZXMP10A18K
Typical characteristics
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
Switching time test circuit
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ZXMP10A18K
Intentionally left blank
Issue 1 - August 2006
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ZXMP10A18K
Package outline - DPAK
DIM
A
A1
b
b2
b3
c
c2
D
D1
E
E1
Inches
Min
Max
0.086
0.094
0.005
0.020
0.035
0.030
0.045
0.205
0.215
0.018
0.024
0.018
0.023
0.213
0.245
0.205
0.250
0.265
0.170
-
Millimeters
Min
Max
2.18
2.39
0.127
0.508
0.89
0.762
1.14
5.21
5.46
0.457
0.61
0.457
0.584
5.41
6.22
5.21
6.35
6.73
4.32
-
DIM
e
H
L
L1
L2
L3
L4
L5
⍜1°
⍜°
-
Inches
Min
Max
0.090 BSC
0.370
0.410
0.055
0.070
0.108 REF
0.020 BSC
0.035
0.065
0.025
0.040
0.045
0.060
0°
10°
0°
15°
-
Millimeters
Min
Max
2.29 BSC
9.40
10.41
1.40
1.78
2.74 REF
0.508 BSC
0.89
1.65
0.635
1.016
1.14
1.52
0°
10°
0°
15°
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - August 2006
© Zetex Semiconductors plc 2006
8
www.zetex.com