ZXMN6A11Z 60V SOT89 N-channel enhancement mode MOSFET Summary RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.6 0.180 @ VGS= 4.5V 2.9 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT89 package D G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D D Ordering information Device G Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 ZXMN6A11ZTA Top view Device marking 11N6 Issue 2 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A11Z Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ±20 V ID 3.6 A Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) 2.9 @ VGS= 10V; Tamb=25°C(a) 2.7 IDM 14.5 A IS 3.7 A Pulsed source current (body diode)(c) ISM 14.5 A Power dissipation at Tamb =25°C(a) PD 1.5 W 12 mW/°C 2.6 W 21 mW/°C Tj, Tstg -55 to +150 °C Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 83.3 °C/W Junction to ambient(b) R⍜JA 47.4 °C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXMN6A11Z Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXMN6A11Z Electrical characteristics (@ Tamb = 25°c unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS 60 Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) Forward transconductance(*)(‡) gfs Input capacitance Typ. Max. Unit Conditions Static V ID= 250A, VGS=0V 1.0 A VDS= 60V, VGS=0V 100 nA VGS=±20V, VDS=0V 1.0 V ID= 250A, VDS=VGS 0.120 ⍀ VGS= 10V, ID= 2.5A 0.180 ⍀ VGS= 4.5V, ID = 2A 4.9 S VDS= 15V, ID= 2.5A Ciss 330 pF Output capacitance Coss 35.2 pF VDS= 40V, VGS=0V f=1MHz Reverse transfer capacitance Crss 17.1 pF Turn-on-delay time td(on) 1.95 ns Rise time tr 3.5 ns Turn-off delay time td(off) 8.2 ns Fall time tf 4.6 ns Gate charge Qg 3.0 nC VDS= 15V, VGS= 5V ID= 2.5A Total gate charge Qg 5.7 nC Gate-source charge Qgs 1.25 nC VDS= 15V, VGS= 10V ID= 2.5A Gate drain charge Qgd 0.86 nC Diode forward voltage(*) VSD 0.85 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Dynamic(‡) Switching (†) (‡) VDD= 30V, ID= 2.5A RG≅6.0⍀, VGS= 10V Source-drain diode 0.95 V Tj=25°C, IS= 2.8A, VGS=0V 21.5 ns 20.5 nC Tj=25°C, IS= 2.5A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXMN6A11Z Typical characteristics Issue 2 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXMN6A11Z Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 2 - September 2006 © Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.com ZXMN6A11Z Intentionally left blank Issue 2 - September 2006 © Zetex Semiconductors plc 2006 7 www.zetex.com ZXMN6A11Z Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - September 2006 © Zetex Semiconductors plc 2006 8 www.zetex.com