MOCD213M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Features Description ■ U.L. Recognized (File #E90700, Volume 2) The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. ■ VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD213VM) ■ Dual-channel Coupler ■ Convenient Plastic SOIC-8 Surface Mountable ■ ■ ■ ■ Package Style Minimum Current Transfer Ratio 100% with Input Current of 10 mA Minimum BVCEO of 70 V Guaranteed Standard SOIC-8 Footprint, with 0.050" Lead Spacing High Input-Output Isolation of 2500 VAC(rms) Guaranteed Applications ■ Feedback Control Circuits ■ Interfacing and Coupling Systems of Different Potentials and Impedances ■ General Purpose Switching Circuits ■ Monitor and Detection Circuits Schematic Package Outline ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 7 EMITTER 1 Figure 2. Package Outline ANODE 2 3 6 COLLECTOR 2 5 EMITTER 2 CATHODE 2 4 Figure 1. Schematic ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers April 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified. Symbol Rating Value Unit 60 mA Emitter IF Forward Current – Continuous Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25°C Derate above 25°C 90 0.8 mW mW/°C VCEO Collector-Emitter Voltage 70 V VECO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25°C Derate above 25°C 150 1.76 mW mW/°C IF (pk) Detector Total Device Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C 250 2.94 mW mW/°C TA Ambient Operating Temperature Range -40 to +100 °C Storage Temperature Range -40 to +150 °C VISO Tstg ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 2 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Absolute Maximum Ratings TA = 25°C unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter VF Input Forward Voltage IF = 30 mA 1.25 1.55 V IR Reverse Leakage Current VR = 6.0 V 0.001 100 µA C Capacitance 18 pF Detector ICEO1 Collector-Emitter Dark Current ICEO2 VCE = 10 V, TA = 25°C 1.0 VCE = 10 V, TA = 100°C 1.0 50 µA nA BVCEO Collector-Emitter Breakdown Voltage IC = 100 µA 70 120 V BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7.0 7.8 V CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 V 7.0 pF Current Transfer Ratio(4) IF = 10 mA, VCE = 10 V Coupled CTR VCE (sat) Collector-Emitter Saturation 100 % IC = 2.0 mA, IF = 10 mA 0.15 0.4 V Voltage ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 8) 3.0 µs toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 8) 2.8 µs tr Rise Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 8) 1.6 µs tf Fall Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 8) 2.2 µs VISO Isolation Surge Voltage(1)(2)(3) (2) RISO Isolation Resistance CISO Isolation Capacitance(2) f = 60 Hz, t = 1 minute 2500 VI-O = 500 V 1011 VI-O = 0 V, f = 1 MHz Vac(rms) Ω 0.2 pF *Typical values at TA = 25°C Notes: 1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC / IF x 100%. ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 3 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Electrical Characteristics 1.8 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 VF – FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = -55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF - LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.6 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25 o C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10 mA NORMALIZED TO VCE = 5 V 0.0 0 120 1 2 3 4 5 6 7 8 9 10 VCE – COLLECTOR-EMITTER VOLTAGE (V) o TA – AMBIENT TEMPERATURE ( C) Figure 6. Output Current vs. Collector - Emitter Voltage Figure 5. Output Current vs. Ambient Temperature I CEO – COLLECTOR -EMITTER DARK CURRENT (nA) 10000 VCE = 10V 1000 100 10 1 0.1 0 20 40 60 80 100 o TA – AMBIENT TEMPERATURE ( C) Figure 7. Dark Current vs. Ambient Temperature ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 4 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Typical Performance Curves WAVEFORMS VCC = 10 V INPUT PULSE IF IC INPUT RL 10% OUTPUT OUTPUT PULSE 90% tr Adjust IF to produce IC = 2 mA ton tf toff Figure 8. Switching Time Test Circuit and Waveform ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 5 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers TEST CIRCUIT 8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 6 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Package Dimensions MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and Reel (2500 units per reel) VDE 0884, Tape and Reel (2500 units per reel) Marking Information 1 D213 V X YY S 3 4 2 6 5 Definitions ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘8’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 7 8.0 ± 0.10 2.0 ± 0.05 3.50 ± 0.20 0.30 MAX Ø1.5 MIN 1.75 ± 0.10 4.0 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 12.0 ± 0.3 Ø1.5 ± 0.1 User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 8 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Carrier Tape Specifications MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 8 minutes maximum www.fairchildsemi.com 9 MOCD213M — Dual-channel Phototransistor Small Outline Surface Mount Optocouplers ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.2 www.fairchildsemi.com 10