FODM8801A, FODM8801B, FODM8801C OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Features Description ■ Utilizing Proprietary Process Technology to Achieve In the OptoHiT™ series, the FODM8801 is a first-of-kind phototransistor, utilizing Fairchild’s leading-edge proprietary process technology to achieve high operating temperature characteristics, up to 125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light-emitting diode (LED) optically coupled to a phototransistor, available in a compact halfpitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, VISO, is rated at 3750 VACRMS. ■ ■ ■ ■ ■ High Operating Temperature: up to 125°C Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range – Excellent CTR Linearity at High-Temperature – CTR at Very Low Input Current, IF High Isolation Voltage Regulated by Safety Agency: C-UL / UL1577, 3750 VACRMS for 1 minute and DIN EN/IEC60747-5-5 Compact Half-Pitch, Mini-Flat, 4-Pin Package (1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height) > 5mm Creepage and Clearance Distance Applicable to Infrared Ray Reflow, 245°C Applications ■ Primarily Suited for DC-DC Converters ■ Ground-Loop Isolation, Signal-Noise Isolation ■ Communications – Adapters, Chargers ■ Consumer – Appliances, Set-Top Boxes ■ Industrial – Power Supplies, Motor Control, Programmable Logic Control Schematic Package ANODE 1 CATHODE 2 4 COLLECTOR 3 EMITTER Figure 2. Half-Pitch Mini-Flat Figure 1. Schematic ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package April 2013 Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For rated main voltage < 150 Vrms I-IV For rated main voltage < 300 Vrms I-III Climatic Classification 40/125/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR,100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1060 Vpeak VPR Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR,Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 848 Vpeak VIORM Max Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over Voltage 4000 Vpeak External Creepage 5 mm External Clearance 5 mm Insulation thickness 0.5 mm Safety Limit Values- Maximum Values allowed in the event of a failure, TS Case Temperature 150 °C Input Current 200 mA PS,OUTPUT Output Power 300 mW 109 Ω IS,INPUT RIO Insulation Resistance at TS,VIO=500 V ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 2 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Safety and Insulation Ratings for Half-Pitch Mini-Flat Package As per DIN EN/IEC 60747-5-5. This optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified Symbol Parameter Value Units -40 to +150 °C TOTAL PACKAGE TSTG Storage Temperature TOPR Operating Temperature -40 to +125 °C Junction Temperature -40 to +140 °C Lead Solder Temperature (Refer to Reflow Temperature Profile on page 13) 260 for 10 s °C Continuous Forward Current 20 mA VR Reverse Input Voltage 6 V PDLED Power Dissipation(1)(3) 40 mW TJ TSOL EMITTER IF(average) DETECTOR IC(average) Continuous Collector Current 30 mA VCEO Collector-Emitter Voltage 75 V VECO Emitter-Collector Voltage 7 V PDC Collector Power Dissipation(2)(3) 150 mW Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol TA VFL(OFF) IFH Parameter Value Units Operating Temperature -40 to +125 °C Input Low Voltage -5.0 to +0.8 V 1 to 10 mA Input High Forward Current Isolation Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage f = 60 Hz, t = 1 min., I ≤ 10 µA(4)(5) I-O 3,750 VacRMS RISO Isolation Resistance VI-O = 500 V(4) 1012 Ω CISO Isolation Capacitance f = 1 MHz 0.3 0.5 pF Notes: 1. Derate linearly from 73˚C at a rate of 0.24 mW/˚C 2. Derate linearly from 73˚C at a rate of 2.23 mW/˚C. 3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. 4. Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together. 5. 3,750 VACRMS for 1 minute is equivalent to 4,500 VACRMS for 1 second. ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 3 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Absolute Maximum Ratings Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol Parameter Conditions Min. Typ. Max. Units 1.00 1.35 1.80 V EMITTER VF Forward Voltage IF = 1 mA Forward-Voltage Coefficient IF = 1 mA IR Reverse Current VR = 6 V CT Terminal Capacitance V = 0 V, f = 1 MHz BVCEO Collector-Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA BVECO Emitter-Collector Breakdown Voltage IE = 100 µA, IF = 0 mA Collector Dark Current VCE = 75 V, IF = 0 mA, TA = 25°C 100 nA VCE = 50 V, IF = 0 mA 50 µA VCE = 5 V, IF = 0 mA 30 µA ΔVF / ΔTA mV / °C -1.6 10 µA 30 pF 75 130 V 7 12 V DETECTOR ICEO CCE Capacitance ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 VCE = 0 V, f = 1 MHz 8 pF www.fairchildsemi.com 4 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Electrical Characteristics Symbol CTRCE Parameter Device FODM8801A Current Transfer Ratio (Collector-Emitter) FODM8801B FODM8801C CTRCE(SAT) Saturated Current FODM8801A Transfer Ratio (Collector-Emitter) FODM8801B FODM8801C VCE(SAT) Saturation Voltage FODM8801A FODM8801B FODM8801C ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 Conditions Min. Typ. Max. Units IF = 1.0 mA, VCE = 5 V @ TA = 25°C 80 120 160 % IF = 1.0 mA, VCE = 5 V 35 120 230 % IF = 1.6 mA, VCE = 5 V 40 125 % IF = 3.0 mA, VCE = 5 V 45 138 % IF = 1.0 mA, VCE = 5 V @ TA = 25°C 130 195 260 % IF = 1.0 mA, VCE = 5 V 65 195 360 % IF = 1.6 mA, VCE = 5 V 70 202 % IF = 3.0 mA, VCE = 5 V 75 215 % IF = 1.0 mA, VCE = 5 V @ TA = 25°C 200 300 400 % IF = 1.0 mA, VCE = 5 V 100 300 560 % IF = 1.6 mA, VCE = 5 V 110 312 % IF = 3.0 mA, VCE = 5 V 115 330 % IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 65 108 IF = 1.0 mA, VCE = 0.4 V 30 108 % IF = 1.6 mA, VCE = 0.4 V 25 104 % IF = 3.0 mA, VCE = 0.4 V 20 92 % IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 90 168 IF = 1.0 mA, VCE = 0.4 V 45 168 % IF = 1.6 mA, VCE = 0.4 V 40 155 % 150 245 % % IF = 3.0 mA, VCE = 0.4 V 35 132 IF = 1.0 mA, VCE = 0.4 V @ TA = 25°C 140 238 IF = 1.0 mA, VCE = 0.4 V 75 238 % IF = 1.6 mA, VCE = 0.4 V 65 215 % IF = 3.0 mA, VCE = 0.4 V 55 177 % % 380 % IF = 1.0 mA, IC = 0.3 mA 0.17 0.40 V IF = 1.6 mA, IC = 0.4 mA 0.16 0.40 V IF = 3.0 mA, IC = 0.6 mA 0.15 0.40 V IF = 1.0 mA, IC = 0.45 mA 0.17 0.40 V IF = 1.6 mA, IC = 0.6 mA 0.16 0.40 V IF = 3.0 mA, IC = 1.0 mA 0.16 0.40 V IF = 1.0 mA, IC = 0.75 mA 0.18 0.40 V IF = 1.6 mA, IC = 1.0 mA 0.17 0.40 V IF = 3.0 mA, IC = 1.6 mA 0.17 0.40 V www.fairchildsemi.com 5 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Transfer Characteristics Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol tON Parameter Turn-On Time Device All Devices Conditions IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ Min. Typ. Max. Units 1 6 20 µs 6 IF = 1.6 mA, VCC = 5 V, RL = 4.7 kΩ tOFF Turn-Off Time All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 1 6 µs 20 µs IF = 1.6 mA, VCC = 5 V, RL = 4.7 kΩ 40 µs tR Output Rise Time (10% to 90%) All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 5 µs tF Output Fall Time All Devices IF = 1.6 mA, VCC = 5 V, RL = 0.75 kΩ 5.5 µs (90% to 10%) CMH Common-Mode Rejection Voltage (Transient Immunity) – Output High All Devices TA = 25°C, IF = 0 mA, VO > 2.0 V, RL = 4.7 kΩ, VCM = 1000 V(6), Figure 16 20 kV / µs CML Common-Mode Rejection Voltage (Transient Immunity) – Output Low All Devices TA = 25°C, IF = 1.6 mA, VO < 0.8 V, RL = 4.7 kΩ, VCM = 1000 V(6), Figure 16 20 kV / µs Note: 6. Common-mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common-mode impulse signal, VCM, to assure that the output remains high. ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 6 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Switching Characteristics 100 100 IC – COLLECTOR CURRENT (mA) IF – FORWARD CURRENT (mA) TA = 25°C 10 TA = 125°C = 25°C TA = -40°C 1.0 0.1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 VCE = 5.0V 10 VCE = 0.4V 1.0 0.1 0.1 1.8 1 Figure 3. Forward Current vs. Forward Voltage CTR (NORMALIZED) = CTR(IF) / CTR(IF = 1mA) CTR – CURRENT TRANSFER RATIO (%) 10 VCE = 5V TA = 25°C 100 10 0.1 1 10 VCE = 5V TA = 25°C NORMALIZED TO IF = 1mA 1.0 0.1 0.1 100 1 IF – FORWARD CURRENT (mA) 10 100 IF – FORWARD CURRENT (mA) Figure 5. Current Transfer Ratio vs. Forward Current Figure 6. Normalized CTR vs. Forward Current 1.2 1.2 VCE = 2V VCE = 5V 1.0 0.8 IF = 2mA 1.0 IF = 2mA NORMALIZED CTR @ 25°C NORMALIZED CTR @ 25°C 100 Figure 4. Collector Current vs. Forward Current 1000 IF = 0.5mA IF = 1mA 0.6 0.4 0.2 0 -40 10 IF – FORWARD CURRENT (mA) VF – FORWARD VOLTAGE (V) 0.8 IF = 0.5mA IF = 1mA 0.6 0.4 0.2 -20 0 20 40 60 80 100 120 0 -40 140 TA – AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 120 140 TA – AMBIENT TEMPERATURE (°C) Figure 7. Normalized CTR vs. Ambient Temperature ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 -20 Figure 8. Normalized CTR vs. Ambient Temperature www.fairchildsemi.com 7 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Typical Performance Curves 100 40 TA = 25°C 35 IC – COLLECTOR CURRENT (mA) IC – COLLECTOR CURRENT (mA) VCE = 5V IF = 20mA IF = 10mA IF = 5.0mA 10 IF = 3.0mA IF = 1.6mA IF = 1.0mA 1.0 IF = 0.5mA 30 IF = 15mA 25 IF = 20mA 20 IF = 10mA 15 IF = 5mA 10 5 0.1 -40 -20 0 20 40 60 80 100 0 120 IF = 1mA 0 1 Figure 9. Collector Current vs. Ambient Temperature 4 5 1000 VCE = 5V TA = 25°C IF = 1.6mA 10000 VCE = 75V SWITCHING TIME (μs) ICEO – COLLECTOR DARK CURRENT (nA) 3 Figure 10 Collector Current vs. Collector-Emitter Voltage 100000 1000 VCE = 48V 100 VCE = 24V VCE = 10V 10 1 100 tOFF tF 10 tON tR 1 VCE = 5V 0.1 0.01 -40 -20 0 20 40 60 80 100 0.1 100 120 10 TA – AMBIENT TEMPERATURE (°C) Figure 12. Switching Time vs. Load Resistance 300 CTR – CURRENT TRANSFER RATIO (%) 0.35 0.30 0.25 IF = 1.6mA, IC = 1.6mA 0.20 IF = 3.0mA, IC = 1.8mA 0.15 0.10 0.05 0.00 -40 100 RL – LOAD RESISTANCE (kΩ) Figure 11. Collector Dark Current vs. Ambient Temperature VCE(SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V) 2 VCE – COLLECTOR-EMITTER VOLTAGE (V) TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 250 VCE = 5V, IF = 1mA VCE = 5V, IF = 1.6mA 200 VCE = 0.4V, IF = 1mA VCE = 0.4V, IF = 1.6mA 150 VCE = 0.4V, IF = 3mA 100 50 -40 120 TA – AMBIENT TEMPERATURE (°C) -20 0 20 40 60 80 100 120 TA – AMBIENT TEMPERATURE (°C) Figure 13. Collector-Emitter Saturation Voltage vs. Ambient Temperature ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 VCE = 5V, IF = 3mA Figure 14. Current Transfer Ration vs. Ambient Temperature www.fairchildsemi.com 8 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Typical Performance Curves (Continued) FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Test Circuits +5V IF Pulse Generator: tr = 5ns ZO = 50Ω PW = 50μs DC = 1% RL = 4.7kΩ + IF Monitor 1 4 2 3 VO VO Monitoring Node GND RM (IF = 1.6mA) Input Pulse tR tF 5V 90% Output Pulse 10% VOL tON tOFF Figure 15. Test Circuit for Propagation Delay, Rise Time, and Fall Time +5V IF RL = 4.7kΩ + 1 4 2 3 SW VO Monitoring Node GND RM VCM Pulse Gen 1kV VCM 90% 10% 0V VOH VO (IF = 0mA) 2V 0.8V VO (IF = 1.6mA) VOL Figure 16. Test Circuit for Instantaneous Common-Mode Rejection Voltage ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 9 2 3 1 4 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 10 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Package Dimensions Part Number Current Transfer Ratio (CTR %) Option, IF = 1 mA, VCE = 5 V FODM8801A 80% to 160% FODM8801B 130% to 260% FODM8801C 200% to 400% Packing Method FODM8801x Tube (100 units per tube) FODM8801x R2 Tape and Reel (2500 units per reel) FODM8801x V Tube (100 units per tube), DIN/EN IEC60747-5-5 FODM8801x R2V Tape and Reel (2500 units per reel), DIN/EN IEC60747-5-5 All packages are lead free per JEDEC: J-STD-020B standard. “x ” denotes the Current Transfer Ratio option. For example, FODM8801A R2 is a phototransistor with 80% to 160% CTR in tape and reel packaging. Marking Information 1 8801x 2 M 6 V X YY 3 4 5 Definitions 1 Fairchild logo 2 Device number, ‘x’ denotes CTR% option (A, B, or C) 3 VDE mark (Note: Only appears on parts ordered with DIN/EN IEC60747-5-5 option – See order entry table) 4 One-digit year code, e.g., ‘1’ represents the year 2011 5 Two-digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 11 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Ordering Information K0 P2 P0 t D0 E A0 W1 W B0 d F D1 P 1.27 Pitch Symbol Dimensions (mm) Tape Width W 12.00 +0.30 / -0.10 Tape Thickness t 0.30 ±0.05 Sprocket Hole Pitch P0 4.00 ±0.10 Sprocket Hole Diameter Description D0 1.50 +0.10 / -0.0 Sprocket Hole Location E 1.75 ±0.10 Pocket Location F 5.50 ±0.10 P2 2.00 ±0.10 Pocket Pitch P 8.00 ±0.10 Pocket Dimension A0 2.80 ±0.10 Pocket Hole Diameter B0 7.30 ±0.10 K0 2.30 ±0.10 D1 1.50 Min. Cover Tape Width W1 Cover Tape Thickness d Max. Component Rotation or Tilt 10° Max. Devices Per Reel 2500 Reel Diameter ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 9.20 0.065 ±0.010 330 mm (13") www.fairchildsemi.com 12 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Tape and Reel Dimensions FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package Reflow Profile 260 T P 245 240 220 TL Temperature (°C) 200 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL 180 160 Tsmin 140 ts 120 100 80 60 40 20 0 240 120 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 245°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max. Time 25°C to Peak Temperature 8 minutes max. Figure 17. Reflow Profile ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2 www.fairchildsemi.com 13 FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package 14 www.fairchildsemi.com ©2010 Fairchild Semiconductor Corporation FODM8801X Rev. 1.1.2