FREESCALE MCIMX31C

Freescale Semiconductor
Data Sheet: Technical Data
Document Number: MCIMX31
Rev. 4.1, 11/2008
MCIMX31 and
MCIMX31L
MCIMX31 and
MCIMX31L
Multimedia Applications
Processors
1
Introduction
The MCIMX31 and MCIMX31L multimedia
applications processors represent the next step in
low-power, high-performance application processors.
Unless otherwise specified, the material in this data sheet
is applicable to both the MCIMX31 and MCIMX31L
processors and referred to singularly throughout this
document as MCIMX31. The MCIMX31L does not
include a graphics processing unit (GPU).
Based on an ARM11™ microprocessor core, the
MCIMX31 provides the performance with low power
consumption required by modern digital devices such
as:
• Feature-rich cellular phones
• Portable media players and mobile gaming
machines
• Personal digital assistants (PDAs) and Wireless PDAs
• Portable DVD players
• Digital cameras
Package Information
Plastic Package
Case 1581 14 x 14 mm, 0.5 mm Pitch
Case 1931 19 x 19 mm, 0.8 mm Pitch
Ordering Information
See Table 1 on page 3 for ordering information.
Contents
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering Information . . . . . . . . . . . . . . . . . . . . . 3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional Description and Application
Information . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
ARM11 Microprocessor Core . . . . . . . . . . . . . . 4
Module Inventory . . . . . . . . . . . . . . . . . . . . . . . 6
Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics . . . . . . . . . . . . . . . . 10
Chip-Level Conditions . . . . . . . . . . . . . . . . . . 10
Supply Power-Up/Power-Down Requirements
and Restrictions . . . . . . . . . . . . . . . . . . . . 18
Module-Level Electrical Specifications . . . . . . 21
Package Information and Pinout . . . . . . . . . 104
MAPBGA Production Package—
457 14 x 14 mm, 0.5 mm Pitch . . . . . . . . . . . 104
MAPBGA Production Package—
473 19 x 19 mm, 0.8 mm Pitch . . . . . . . . . . . 110
Ball Maps . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Product Differences . . . . . . . . . . . . . . . . . . . . 118
Product Documentation . . . . . . . . . . . . . . . . 119
Revision History . . . . . . . . . . . . . . . . . . . . . . . 120
The MCIMX31 takes advantage of the ARM1136JF-S™
core running at up to 532 MHz, and is optimized for
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005–2008. All rights reserved.
Introduction
minimal power consumption using the most advanced techniques for power saving (DPTC, DVFS, power
gating, clock gating). With 90 nm technology and dual-Vt transistors (two threshold voltages), the
MCIMX31 provides the optimal performance versus leakage current balance.
The performance of the MCIMX31 is boosted by a multi-level cache system, and features peripheral
devices such as an MPEG-4 Hardware Encoder (VGA, 30 fps), an Autonomous Image Processing Unit, a
Vector Floating Point (VFP11) co-processor, and a RISC-based SDMA controller.
The MCIMX31 supports connections to various types of external memories, such as DDR, NAND Flash,
NOR Flash, SDRAM, and SRAM. The MCIMX31 can be connected to a variety of external devices using
technology, such as high-speed USB2.0 OTG, ATA, MMC/SDIO, and compact flash.
1.1
Features
The MCIMX31 is designed for the high-tier, mid-tier smartphone markets, and portable media players.
They provide low-power solutions for high-performance demanding multimedia and graphics
applications.
The MCIMX31 is built around the ARM11 MCU core and implemented in the 90 nm technology.
The systems include the following features:
• Multimedia and floating-point hardware acceleration supporting:
— MPEG-4 real-time encode of up to VGA at 30 fps
— MPEG-4 real-time video post-processing of up to VGA at 30 fps
— Video conference call of up to QCIF-30 fps (decoder in software), 128 kbps
— Video streaming (playback) of up to VGA-30 fps, 384 kbps
— 3D graphics and other applications acceleration with the ARM® tightly-coupled Vector
Floating Point co-processor
— On-the-fly video processing that reduces system memory load (for example, the
power-efficient viewfinder application with no involvement of either the memory system or the
ARM CPU)
• Advanced power management
— Dynamic voltage and frequency scaling
— Multiple clock and power domains
— Independent gating of power domains
• Multiple communication and expansion ports including a fast parallel interface to an external
graphic accelerator (supporting major graphic accelerator vendors)
• Security
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
2
Freescale Semiconductor
Introduction
1.2
Ordering Information
Table 1 provides the ordering information for the MCIMX31.
Table 1. Ordering Information
1
2
3
4
5
Part Number
Silicon Revision1, 2, 3,4
Device Mask
Operating Temperature
Range (°C)
MCIMX31VKN5
1.15
2L38W and 3L38W
0 to 70
MCIMX31LVKN5
1.15
2L38W and 3L38W
0 to 70
MCIMX31VKN5B
1.2
M45G
0 to 70
MCIMX31LVKN5B
1.2
M45G
0 to 70
MCIMX31VKN5C
2.0
M91E
0 to 70
MCIMX31LVKN5C
2.0
M91E
0 to 70
MCIMX31CVKN5C
2.0
M91E
–40 to 85
MCIMX31LCVKN5C
2.0
M91E
–40 to 85
MCIMX31VMN5C
2.0
M91E
0 to 70
MCIMX31LVMN5C
2.0
M91E
0 to 70
Package5
14 x 14 mm,
0.5 mm pitch,
MAPBGA-457,
Case 1581
14 x 14 mm,
0.5 mm pitch,
MAPBGA-457,
Case 1581
19 x 19 mm,
0.8 mm pitch,
Case 1931
Information on reading the silicon revision register can be found in the IC Identification (IIM) chapter of the Reference Manual,
see Section 7, “Product Documentation.”
Errata and fix information of the various mask sets can be found in the standard MCIMX31 Chip Errata, see Section 7, “Product
Documentation.”
Changes in output buffer characteristics can be found in the I/O Setting Exceptions and Special Pad Descriptions table in the
Reference Manual, see Section 7, “Product Documentation.”
JTAG functionality is not tested nor guaranteed at -40°C.
Case 1581 and 1931 are RoHS compliant, lead-free, MSL = 3, and solders at 260°C.
1.2.1
Feature Differences Between Mask Sets
The following is a summary of differences between silicon Revision 2.0, mask set M91E, and previous
revisions of silicon. A complete list of these differences is given in Table 72.
• Extended operating temperature range is available: –40°C to 85°C
• Supply current information changes, as shown in Table 13 and Table 14
• FUSE_VDD supply voltage is floated or grounded during read operation
• No restriction on PLL versus core supply voltage
• Operating frequency as shown in Table 8.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
3
Functional Description and Application Information
1.3
Block Diagram
Figure 1 shows the MCIMX31 simplified interface block diagram.
SRAM, PSRAM,
NOR Flash
SDRAM
DDR
NAND Flash,
SmartMedia
Parallel
Display (2)
Camera
Sensor (2)
Serial
LCD
Tamper
Detection
Mouse
Keyboard
External Memory
Interface (EMI)
Camera Interface
AP Peripherals
AUDMUX
SSI (2)
Blending
UART (5)
Image Processing Unit (IPU)
Inversion and Rotation
MPEG-4
Video Encoder
SDMA
I2C (3)
FIR
CSPI (3)
PWM
USB Host (2)
Display/TV Ctl
Pre and Post Processing
Internal
Memory
Expansion
ARM11TM Platform
SDHC (2)
PCMCIA/CF
Mem Stick (2)
ARM1136JF-STM
I-Cache
D-Cache
SIM
L2-Cache
Debug
ECT
SJC
Timers
RTC
WDOG
USB-OTG
KPP
GPT
EPIT (2)
GPIO
CCM
1-WIRE®
IIM
ATA
MAX
ROMPATCH
Security
SCC
RTIC
Power
Management
IC
8x8
Keypad
Serial
EPROM
GPU*
RNGA
GPS
VFP
ETM
Fast
IrDA
* GPU unavailable for i.MX31L
Bluetooth Baseband
WLAN
SD
Card
PC
Card
PC
Card
ATA
Hard Drive
USB
Host/Device
Figure 1. MCIMX31 Simplified Interface Block Diagram
2
2.1
Functional Description and Application Information
ARM11 Microprocessor Core
The CPU of the MCIMX31 is the ARM1136JF-S core based on the ARM v6 architecture. It supports the
ARM Thumb® instruction sets, features Jazelle® technology (which enables direct execution of Java byte
codes), and a range of SIMD DSP instructions that operate on 16-bit or 8-bit data values in 32-bit registers.
The ARM1136JF-S processor core features:
• Integer unit with integral EmbeddedICE™ logic
• Eight-stage pipeline
• Branch prediction with return stack
• Low-interrupt latency
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
4
Freescale Semiconductor
Functional Description and Application Information
•
•
•
•
•
•
•
•
Instruction and data memory management units (MMUs), managed using micro TLB structures
backed by a unified main TLB
Instruction and data L1 caches, including a non-blocking data cache with Hit-Under-Miss
Virtually indexed/physically addressed L1 caches
64-bit interface to both L1 caches
Write buffer (bypassable)
High-speed Advanced Micro Bus Architecture (AMBA)™ L2 interface
Vector Floating Point co-processor (VFP) for 3D graphics and other floating-point applications
hardware acceleration
ETM™ and JTAG-based debug support
2.1.1
Memory System
The ARM1136JF-S complex includes 16 KB Instruction and 16 KB Data L1 caches. It connects to the
MCIMX31 L2 unified cache through 64-bit instruction (read-only), 64-bit data read/write (bi-directional),
and 64-bit data write interfaces.
The embedded 16K SRAM can be used for audio streaming data to avoid external memory accesses for
the low-power audio playback, for security, or for other applications. There is also a 32-KB ROM for
bootstrap code and other frequently-used code and data.
A ROM patch module provides the ability to patch the internal ROM. It can also initiate an external boot
by overriding the boot reset sequence by a jump to a configurable address.
Table 2 shows information about the MCIMX31 core in tabular form.
Table 2. MCIMX31 Core
Core
Acronym
Core
Name
ARM11 or ARM1136
ARM1136 Platform
Brief Description
The ARM1136™ Platform consists of the ARM1136JF-S core, the ETM
real-time debug modules, a 6 x 5 multi-layer AHB crossbar switch (MAX), and
a Vector Floating Processor (VFP).
The MCIMX31 provides a high-performance ARM11 microprocessor core and
highly integrated system functions. The ARM Application Processor (AP) and
other subsystems address the needs of the personal, wireless, and portable
product market with integrated peripherals, advanced processor core, and
power management capabilities.
Integrated Memory
Includes
• 16 Kbyte Instruction
Cache
• 16 Kbyte Data
Cache
• 128 Kbyte L2 Cache
• 32 Kbyte ROM
• 16 Kbyte RAM
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
5
Functional Description and Application Information
2.2
Module Inventory
Table 3 shows an alphabetical listing of the modules in the multimedia applications processor. For
extended descriptions of the modules, see the reference manual. A cross-reference is provided to the
electrical specifications and timing information for each module with external signal connections.
Table 3. Digital and Analog Modules
Block
Mnemonic
Block Name
Functional
Grouping
Section/
Page
Brief Description
1-Wire®
1-Wire Interface Connectivity The 1-Wire module provides bi-directional communication between
Peripheral
the ARM11 core and external 1-Wire devices.
4.3.4/26
ATA
Advanced
Connectivity The ATA block is an AT attachment host interface. It is designed to
Technology (AT) Peripheral
interface with IDE hard disc drives and ATAPI optical disc drives.
Attachment
4.3.5/27
Digital Audio
Multiplexer
Multimedia
Peripheral
The AUDMUX interconnections allow multiple, simultaneous
audio/voice/data flows between the ports in point-to-point or
point-to-multipoint configurations.
4.3.6/36
Clock Amplifier
Module
Clock
The CAMP converts a square wave/sinusoidal input into a rail-to-rail
square wave. The output of CAMP feeds the predivider.
4.3.3/25
CCM
Clock Control
Module
Clock
The CCM provides clock, reset, and power management control for
the MCIMX31.
—
CSPI
Configurable
Connectivity The CSPI is equipped with data FIFOs and is a master/slave
configurable serial peripheral interface module, capable of
Serial Peripheral Peripheral
interfacing to both SPI master and slave devices.
Interface (x 3)
4.3.7/36
DPLL
Digital Phase
Lock Loop
Clock
The DPLLs produce high-frequency on-chip clocks with low
frequency and phase jitters.
Note: External clock sources provide the reference frequencies.
4.3.8/37
ECT
Embedded
Cross Trigger
Debug
The ECT is composed of three CTIs (Cross Trigger Interface) and
one CTM (Cross Trigger Matrix—key in the multi-core and
multi-peripheral debug strategy.
—
EMI
External
Memory
Interface
Memory
Interface
(EMI)
The EMI includes
• Multi-Master Memory Interface (M3IF)
• Enhanced SDRAM Controller (ESDCTL)
• NAND Flash Controller (NFC)
• Wireless External Interface Module (WEIM)
EPIT
Enhanced
Periodic
Interrupt Timer
Timer
Peripheral
The EPIT is a 32-bit “set and forget” timer which starts counting after
the EPIT is enabled by software. It is capable of providing precise
interrupts at regular intervals with minimal processor intervention.
ETM
Embedded
Trace Macrocell
Debug/Trace The ETM (from ARM, Ltd.) supports real-time instruction and data
tracing by way of ETM auxiliary I/O port.
4.3.10/54
FIR
Fast InfraRed
Interface
Connectivity This FIR is capable of establishing a 0.576 Mbit/s, 1.152 Mbit/s or 4
Peripheral
Mbit/s half duplex link via a LED and IR detector. It supports 0.576
Mbit/s, 1.152 Mbit/s medium infrared (MIR) physical layer protocol
and 4Mbit/s fast infrared (FIR) physical layer protocol defined by
IrDA, Rev. 1.4.
4.3.11/55
AUDMUX
CAMP
—
4.3.9.3/46,
4.3.9.1/38,
4.3.9.2/41
—
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
6
Freescale Semiconductor
Functional Description and Application Information
Table 3. Digital and Analog Modules (continued)
Block
Mnemonic
Fusebox
Block Name
Functional
Grouping
Brief Description
Section/
Page
Fusebox
ROM
The Fusebox is a ROM that is factory configured by Freescale.
GPIO
General
Purpose I/O
Module
Pins
The GPIO provides several groups of 32-bit bidirectional, general
purpose I/O. This peripheral provides dedicated general-purpose
signals that can be configured as either inputs or outputs.
—
GPT
General
Purpose Timer
Timer
Peripheral
The GPT is a multipurpose module used to measure intervals or
generate periodic output.
—
GPU
Graphics
Processing Unit
Multimedia
Peripheral
The GPU provides hardware acceleration for 2D and 3D graphics
algorithms.
—
I2C
Inter IC
Communication
Connectivity The I2C provides serial interface for controlling the Sensor Interface
Peripheral
and other external devices. Data rates of up to 100 Kbits/s are
supported.
IIM
IC Identification
Module
ID
The IIM provides an interface for reading device identification.
IPU
Image
Processing Unit
Multimedia
Peripheral
The IPU processes video and graphics functions in the MCIMX31
and interfaces to video, still image sensors, and displays.
KPP
Keypad Port
Connectivity The KPP is used for keypad matrix scanning or as a general purpose
Peripheral
I/O. This peripheral simplifies the software task of scanning a keypad
matrix.
—
MPEG-4
MPEG-4 Video
Encoder
Multimedia
Peripherals
—
MSHC
Memory Stick
Host Controller
Connectivity The MSHC is placed in between the AIPS and the customer memory
Peripheral
stick to support data transfer from the MCIMX31 to the customer
memory stick.
4.3.16/84
PADIO
Pads I/O
Buffers and
Drivers
4.3.1/22
PCM
Connectivity The PCMCIA Host Adapter provides the control logic for PCMCIA
Peripheral
socket interfaces.
4.3.17/86
PWM
Pulse-Width
Modulator
Timer
Peripheral
The PWM has a 16-bit counter and is optimized to generate sound
from stored sample audio images. It can also generate tones.
4.3.18/88
RNGA
Random
Number
Generator
Accelerator
Security
The RNGA module is a digital integrated circuit capable of generating
32-bit random numbers. It is designed to comply with FIPS-140
standards for randomness and non-determinism.
—
PCMCIA
The MPEG-4 encoder accelerates video compression, following the
MPEG-4 standard
The PADIO serves as the interface between the internal modules and
the device's external connections.
4.3.12/55
See also
Table 11
4.3.13/56
—
4.3.14/57,
4.3.15/59
RTC
Real Time Clock Timer
Peripheral
The RTC module provides a current stamp of seconds, minutes,
hours, and days. Alarm and timer functions are also available for
programming. The RTC supports dates from the year 1980 to 2050.
—
RTIC
Run-Time
Integrity
Checkers
The RTIC ensures the integrity of the peripheral memory contents
and assists with boot authentication.
—
Security
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
7
Functional Description and Application Information
Table 3. Digital and Analog Modules (continued)
Block
Mnemonic
SCC
Block Name
Functional
Grouping
Section/
Page
Brief Description
Security
Controller
Module
Security
The SCC is a hardware component composed of two blocks—the
Secure RAM module, and the Security Monitor. The Secure RAM
provides a way of securely storing sensitive information.
SDHC
Secured Digital
Host Controller
Connectivity The SDHC controls the MMC (MultiMediaCard), SD (Secure Digital)
Peripheral
memory, and I/O cards by sending commands to cards and
performing data accesses to and from the cards.
SDMA
Smart Direct
System
Memory Access Control
Peripheral
The SDMA controller maximizes the system’s performance by
relieving the ARM core of the task of bulk data transfer from memory
to memory or between memory and on-chip peripherals.
—
4.3.19/89
—
SIM
Subscriber
Identification
Module
Connectivity The SIM interfaces to an external Subscriber Identification Card. It is
Peripheral
an asynchronous serial interface adapted for Smart Card
communication for e-commerce applications.
4.3.20/90
SJC
Secure JTAG
Controller
Debug
The SJC provides debug and test control with maximum security and
provides a flexible architecture for future derivatives or future
multi-cores architecture.
4.3.21/94
SSI
Synchronous
Serial Interface
Multimedia
Peripheral
The SSI is a full-duplex, serial port that allows the device to
communicate with a variety of serial devices, such as standard
codecs, Digital Signal Processors (DSPs), microprocessors,
peripherals, and popular industry audio codecs that implement the
inter-IC sound bus standard (I2S) and Intel AC97 standard.
4.3.22/96
UART
Universal
Asynchronous
Receiver/Trans
mitter
Connectivity The UART provides serial communication capability with external
Peripheral
devices through an RS-232 cable or through use of external circuitry
that converts infrared signals to electrical signals (for reception) or
transforms electrical signals to signals that drive an infrared LED (for
transmission) to provide low speed IrDA compatibility.
USB
Universal Serial
Bus—
2 Host
Controllers and
1 OTG
(On-The-Go)
Connectivity
Peripherals
WDOG
Watchdog Timer Timer
Module
Peripheral
—
• USB Host 1 is designed to support transceiverless connection to 4.3.23/104
the on-board peripherals in Low Speed and Full Speed mode, and
connection to the ULPI (UTMI+ Low-Pin Count) and Legacy Full
Speed transceivers.
• USB Host 2 is designed to support transceiverless connection to
the Cellular Modem Baseband Processor.
• The USB-OTG controller offers HS/FS/LS capabilities in Host
mode and HS/FS in device mode. In Host mode, the controller
supports direct connection of a FS/LS device (without external
hub). In device (bypass) mode, the OTG port functions as gateway
between the Host 1 Port and the OTG transceiver.
The WDOG module protects against system failures by providing a
method for the system to recover from unexpected events or
programming errors.
—
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
8
Freescale Semiconductor
Signal Descriptions
3
Signal Descriptions
Signal descriptions are in the reference manual. Special signal considerations are listed following this
paragraph. The BGA ball assignment is in Section 5, “Package Information and Pinout.”
Special Signal Considerations:
• Tamper detect (GPIO1_6)
Tamper detect logic is used to issue a security violation. This logic is activated if the tamper detect
input is asserted.
The tamper detect logic is disabled after reset. After enabling the logic, it is impossible to disable
it until the next reset. The GPR[16] bit functions as the tamper detect enable bit.
GPIO1_6 functions similarly to other I/O with GPIO capabilities regardless of the status of the
tamper detect enable bit. (For example, the GPIO1_6 can function as an input with GPIO
capabilities, such as sampling through PSR or generating interrupts.)
• Power ready (GPIO1_5)
The power ready input, GPIO1_5, should be connected to an external power management IC power
ready output signal. If not used, GPIO1_5 must either be (a) externally pulled-up to NVCC1 or (b)
a no connect, internally pulled-up by enabling the on-chip pull-up resistor. GPIO1_5 is a dedicated
input and cannot be used as a general-purpose input/output.
• SJC_MOD
SJC_MOD must be externally connected to GND for normal operation. Termination to GND
through an external pull-down resistor (such as 1 kΩ) is allowed, but the value should be much
smaller than the on-chip 100 kΩ pull-up.
• CE_CONTROL
CE_CONTROL is a reserved input and must be externally tied to GND through a 1 kΩ resistor.
• TTM_PAD
TTM_PAD is for Freescale factory use only. Control bits indicate pull-up/down disabled. However,
TTM_PAD is actually connected to an on-chip pull-down device. Users must either float this signal
or tie it to GND.
• M_REQUEST and M_GRANT
These two signals are not utilized internally. The user should make no connection to these signals.
• Clock Source Select (CLKSS)
The CLKSS is the input that selects the default reference clock source providing input to the DPLL.
To select CKIH, tie CLKSS to NVCC1. To select CKIL, tie CLKSS to ground. After initialization,
the reference clock source can be changed (initial setting is overwritten) by programming the
PRCS bits in the CCMR.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
9
Electrical Characteristics
4
Electrical Characteristics
This section provides the device-level and module-level electrical characteristics for the MCIMX31.
4.1
Chip-Level Conditions
This section provides the device-level electrical characteristics for the IC. See Table 4 for a quick reference
to the individual tables and sections.
Table 4. MCIMX31 Chip-Level Conditions
For these characteristics, …
Topic appears …
Table 5, “Absolute Maximum Ratings”
on page 10
Table 7, “Thermal Resistance Data—19 × 19 mm Package”
on page 11
Table 8, “Operating Ranges”
on page 13
Table 9, “Specific Operating Ranges for Silicon Revision 2.0”
on page 14
Table 10, “Interface Frequency”
on page 14
Section 4.1.1, “Supply Current Specifications”
on page 16
Section 4.2, “Supply Power-Up/Power-Down Requirements and Restrictions”
on page 19
CAUTION
Stresses beyond those listed under Table 5 may cause permanent damage to
the device. These are stress ratings only. Functional operation of the device
at these or any other conditions beyond those indicated under Table 8,
"Operating Ranges," on page 13 is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device
reliability.
Table 5. Absolute Maximum Ratings
Parameter
Symbol
Min
Max
Units
Supply Voltage (Core)
QVCCmax
–0.5
1.65
V
Supply Voltage (I/O)
NVCCmax
–0.5
3.3
V
Input Voltage Range
VImax
–0.5
NVCC +0.3
V
Storage Temperature
Tstorage
–40
125
oC
—
1500
—
200
—
500
—
15
ESD Damage Immunity:
Human Body Model (HBM)
Machine Model (MM)
Vesd
Charge Device Model (CDM)
Offset voltage allowed in run mode between core supplies.
1
Vcore_offset1
V
mV
The offset is the difference between all core voltage pair combinations of QVCC, QVCC1, and QVCC4.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
10
Freescale Semiconductor
Electrical Characteristics
Table 6 provides the thermal resistance data for the 14 × 14 mm, 0.5 mm pitch package.
Table 6. Thermal Resistance Data—14 × 14 mm Package
Rating
Board
Symbol
Value
Unit
Notes
Junction to Ambient (natural convection)
Single layer board (1s)
RθJA
56
°C/W
1, 2, 3
Junction to Ambient (natural convection)
Four layer board (2s2p)
RθJA
30
°C/W
1, 3
Junction to Ambient (@200 ft/min)
Single layer board (1s)
RθJMA
46
°C/W
1, 2, 3
Junction to Ambient (@200 ft/min)
Four layer board (2s2p)
RθJMA
26
°C/W
1, 3
Junction to Board
—
RθJB
17
°C/W
1, 4
Junction to Case
—
RθJC
10
°C/W
1, 5
Junction to Package Top (natural convection)
—
ΨJT
2
°C/W
1, 6
NOTES
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of
other components on the board, and board thermal resistance.
2. Per JEDEC JESD51-2 with the single layer board horizontal. Board meets JESD51-9
specification.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method
(MIL SPEC-883 Method 1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top
and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the
thermal characterization parameter is written as Psi-JT.
Table 7 provides the thermal resistance data for the 19 × 19 mm, 0.8 mm pitch package.
Table 7. Thermal Resistance Data—19 × 19 mm Package
Rating
Board
Symbol
Value
Unit
Notes
Junction to Ambient (natural convection)
Single layer board (1s)
RθJA
46
°C/W
1, 2, 3
Junction to Ambient (natural convection)
Four layer board (2s2p)
RθJA
29
°C/W
1, 2, 3
Junction to Ambient (@200 ft/min)
Single layer board (1s)
RθJMA
38
°C/W
1, 2, 3
Junction to Ambient (@200 ft/min)
Four layer board (2s2p)
RθJMA
25
°C/W
1, 2, 3
Junction to Board
—
RθJB
19
°C/W
1, 3
Junction to Case (Top)
—
RθJCtop
10
°C/W
1, 4
Junction to Package Top (natural convection)
—
ΨJT
2
°C/W
1, 5
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
11
Electrical Characteristics
1.
2.
3.
4.
5.
NOTES
Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of
other components on the board, and board thermal resistance.
Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6.
Thermal test board meets JEDEC specification for this package.
Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board
meets JEDEC specification for the specified package.
Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The
cold plate temperature is used for the case temperature. Reported value includes the thermal
resistance of the interface layer.
Thermal characterization parameter indicating the temperature difference between the package
top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the
thermal characterization parameter is written as Psi-JT.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
12
Freescale Semiconductor
Electrical Characteristics
Table 8 provides the operating ranges.
NOTE
The term NVCC in this section refers to the associated supply rail of an
input or output. The association is shown in the Signal Multiplexing chapter
of the reference manual.
CAUTION
NVCC6 and NVCC9 must be at the same voltage potential. These supplies
are connected together on-chip to optimize ESD damage immunity.
Table 8. Operating Ranges
Symbol
QVCC,
QVCC1,
QVCC4
NVCC1,
NVCC3–10
NVCC2,
NVCC21,
NVCC22
Parameter
Core Operating Voltage
0 ≤ fARM ≤ 400 MHz, non-overdrive
0 ≤ fARM ≤ 400 MHz, overdrive4
0 ≤ fARM ≤ 532 MHz, overdrive4
Silicon rev 1.15, 1.2, and 2.0
FUSE_VDD
TA
1
2
3
4
5
6
Max
Units
1.22
>1.47
1.55
1.47
1.65
1.65
V
State Retention Voltage5
0.95
—
I/O Supply Voltage, except DDR6non-overdrive
overdrive7
1.75
>3.1
3.1
3.3
V
I/O Supply Voltage, DDR only
1.75
1.95
V
1.3
>1.47
1.47
1.6
1.6
1.9
V
1.65
1.95
V
3.0
3.3
V
70
oC
FVCC, MVCC, PLL (Phase-Locked Loop) and FPM (Frequency Pre-multiplier) Supply Voltage8
non-overdrive
SVCC, UVCC
overdrive4
IOQVDD
Min
1,2,3
On-device Level Shifter Supply Voltage
Fusebox read Supply
Voltage9, 10
Fusebox write (program) Supply Voltage11
Operating Ambient Temperature
Range12
V
0
Measured at package balls, including peripherals, ARM, and L2 cache supplies (QVCC, QVCC1, QVCC4, respectively).
The core voltage must be higher than 1.38V to avoid corrupted data during transfers from the USB HS. Please refer to Errata
file ENGcm02610 ID.
If the Core voltage is supplied by the MC13738, it will be 1.6 ± 0.05 V during the power-up sequence. This is allowed. After
power-up the voltage should be reduced to avoid operation in overdrive mode.
Supply voltage is considered “overdrive” for voltages above 1.47 V. Operation time in overdrive—whether switching or
not—must be limited to a cumulative duration of 1.25 years (10,950 hours) or less to sustain the maximum operating voltage
without significant device degradation—for example, 25% (average 6 hours out of 24 yours per day) duty cycle for 5-year rated
equipment. To tolerate the maximum operating overdrive voltage for 10 years, the device must have a duty cycle of 12.5% or
less in overdrive (for example 3 out of 24 hours per day). Below 1.47V, duty cycle restrictions may apply for equipment rated
above 5 years.
The SR voltage is applied to QVCC, QVCC1, and QVCC4 after the device is placed in SR mode. The Real-Time Clock (RTC)
is operational in State Retention (SR) mode.
Overshoot and undershoot conditions (transitions above NVCC and below GND) on I/O must be held below 0.6 V, and the
duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/undershoot must be
controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
13
Electrical Characteristics
7
Supply voltage is considered “overdrive” for voltages above 3.1 V. Operation time in overdrive—whether switching or
not—must be limited to a cumulative duration of 1 year (8,760 hours) or less to sustain the maximum operating voltage without
significant device degradation—for example, 20% (average 4.8 hours out of 24 hours per day) duty cycle for 5-year rated
equipment. Operation at 3.3 V that exceeds a cumulative 3,504 hours may cause non-operation whenever supply voltage is
reduced to 1.8 V; degradation may render the device too slow or inoperable. Below 3.1 V, duty cycle restrictions may apply for
equipment rated above 5 years.
8
For normal operating conditions, PLLs’ and core supplies must maintain the following relation: PLL ≥ Core – 100 mV. In other
words, for a 1.6 V core supply, PLL supplies must be set to 1.5 V or higher. This restriction is no longer necessary on mask
set M91E. PLL supplies may be set independently of core supply. PLL voltage must not be altered after power up, otherwise
the PLL will be unstable and lose lock. To minimize inducing noise on the PLL supply line, source the voltage from a low-noise,
dedicated supply. PLL parameters in Table 31, "DPLL Specifications," on page 37, are guaranteed over the entire specified
voltage range.
9
Fusebox read supply voltage applies to silicon Revisions 1.2 and previous.
10
In read mode, FUSE_VDD can be floated or grounded for mask set M91E (silicon Revision 2.0).
11
Fuses might be inadvertently blown if written to while the voltage is below this minimum.
12
The temperature range given is for the consumer version. Please refer to Table 1 for extended temperature range offerings
and the associated part numbers.
Table 9. Specific Operating Ranges for Silicon Revision 2.0
Symbol
FUSE_VDD
1
2
Parameter
Fusebox read Supply
Voltage1
Fusebox write (program) Supply
Voltage2
Min
Max
Units
—
—
V
3.0
3.3
V
In read mode, FUSE_VDD should be floated or grounded.
Fuses might be inadvertently blown if written to while the voltage is below the minimum.
Table 10 provides information for interface frequency limits. For more details about clocks characteristics,
see Section 4.3.8, “DPLL Electrical Specifications,” and Section 4.3.3, “Clock Amplifier Module (CAMP)
Electrical Characteristics.”
Table 10. Interface Frequency
ID
1
2
3
Parameter
Symbol
Min
Typ
Max
Units
fJTAG
DC
5
10
MHz
1
fCKIL
32
32.768
38.4
kHz
Frequency2
fCKIH
15
26
75
MHz
JTAG TCK Frequency
CKIL Frequency
CKIH
1
CKIL must be driven by an external clock source to ensure proper start-up and operation of the device. CKIL is needed to clock
the internal reset synchronizer, the watchdog, and the real-time clock.
2 DPTC functionality, specifically the voltage/frequency relation table, is dependent on CKIH frequency. At the time of publication,
standard tables used by Freescale OSs provided for a CKIH frequency of 26 MHz only. Any deviation from this frequency
requires an update to the OS. For more details, refer to the particular OS user's guide documentation.
Table 11 shows the fusebox supply current parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
14
Freescale Semiconductor
Electrical Characteristics
Table 11. Fusebox Supply Current Parameters
Ref. Num
1
2
Description
1
1
eFuse Program Current.
Current to program one eFuse bit: efuse_pgm = 3.0 V
2
eFuse Read Current2
Current to read an 8-bit eFuse word
vdd_fusebox = 1.875 V
Symbol
Minimum
Typical
Maximum
Units
Iprogram
—
35
60
mA
Iread
—
5
8
mA
The current Iprogram is during program time (tprogram).
The current Iread is present for approximately 50 ns of the read access to the 8-bit word, and only applies to Silicon Rev. 1.2
and previous.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
15
Electrical Characteristics
4.1.1
Supply Current Specifications
Table 12 shows the core current consumption for 0°C to 70°C for Silicon Revision 1.2 and previous for the
MCIMX31.
Table 12. Current Consumption for 0°C to 70°C1, 2 for Silicon Revision 1.2 and Previous
Mode
Conditions
State
• QVCC and QVCC1 = 0.95 V
Retention • L2 caches are power gated (QVCC4 = 0 V)
• All PLLs are off, VCC = 1.4 V
• ARM is in well bias
• FPM is off
• 32 kHz input is on
• CKIH input is off
• CAMP is off
• TCK input is off
• All modules are off
• No external resistive loads
• RNGA oscillator is off
Wait
1
2
•
•
•
•
•
•
•
•
•
•
•
•
QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
• RNGA oscillator is off
• No external resistive loads
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC + MVCC
+ SVCC + UVCC
Unit
(PLL)
Typ
Max
Typ
Max
Typ
Max
Typ
Max
0.80
—
0.50
—
—
—
0.04
—
mA
6.00
—
3.00
—
0.04
—
3.50
—
mA
Typical column: TA = 25°C
Maximum column: TA = 70°C
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
16
Freescale Semiconductor
Electrical Characteristics
Table 13 shows the core current consumption for –40°C to 85°C for Silicon Revision 2.0 for the
MCIMX31.
Table 13. Current Consumption for –40°C to 85°C1, 2 for Silicon Revision 2.0
Mode
Deep
Sleep
Conditions
• QVCC = 0.95 V
• ARM and L2 caches are power gated
(QVCC1 = QVCC4 = 0 V)
• All PLLs are off, VCC = 1.4 V
• ARM is in well bias
• FPM is off
• 32 kHz input is on
• CKIH input is off
• CAMP is off
• TCK input is off
• All modules are off
• No external resistive loads
• RNGA oscillator is off
State
• QVCC and QVCC1 = 0.95 V
Retention • L2 caches are power gated (QVCC4 = 0 V)
• All PLLs are off, VCC = 1.4 V
• ARM is in well bias
• FPM is off
• 32 kHz input is on
• CKIH input is off
• CAMP is off
• TCK input is off
• All modules are off
• No external resistive loads
• RNGA oscillator is off
Wait
1
2
•
•
•
•
•
•
•
•
•
•
•
•
QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
• RNGA oscillator is off
• No external resistive loads
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC + MVCC
+ SVCC + UVCC
Unit
(PLL)
Typ
Max
Typ
Max
Typ
Max
Typ
Max
0.16
5.50
—
—
—
—
0.02
0.10
mA
0.16
5.50
0.07
2.20
—
—
0.02
0.10
mA
6.00
15.00 2.20
25.00
3.60
4.40
mA
0.03 0.29
Typical column: TA = 25°C
Maximum column: TA = 85°C
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
17
Electrical Characteristics
Table 14 shows the core current consumption for 0°C to 70°C for Silicon Revision 2.0 for the MCIMX31.
Table 14. Current Consumption for 0°C to 70°C1, 2 for Silicon Revision 2.0
Mode
Deep
Sleep
Conditions
• QVCC = 0.95 V
• ARM and L2 caches are power gated
(QVCC1 2= QVCC4 = 0 V)
• All PLLs are off, VCC = 1.4 V
• ARM is in well bias
• FPM is off
• 32 kHz input is on
• CKIH input is off
• CAMP is off
• TCK input is off
• All modules are off
• No external resistive loads
• RNGA oscillator is off
State
• QVCC and QVCC1 = 0.95 V
Retention • L2 caches are power gated (QVCC4 = 0 V)
• All PLLs are off, VCC = 1.4 V
• ARM is in well bias
• FPM is off
• 32 kHz input is on
• CKIH input is off
• CAMP is off
• TCK input is off
• All modules are off
• No external resistive loads
• RNGA oscillator is off
Wait
1
2
•
•
•
•
•
•
•
•
•
•
•
•
QVCC,QVCC1, and QVCC4 = 1.22 V
ARM is in wait for interrupt mode
MAX is active
L2 cache is stopped but powered
MCU PLL is on (532 MHz), VCC = 1.4 V
USB PLL and SPLL are off, VCC = 1.4 V
FPM is on
CKIH input is on
CAMP is on
32 kHz input is on
All clocks are gated off
All modules are off
(by programming CGR[2:0] registers)
• RNGA oscillator is off
• No external resistive loads
QVCC
(Peripheral)
QVCC1
(ARM)
QVCC4
(L2)
FVCC, +MVCC,
+SVCC, +UVCC
Unit
(PLL)
Typ
Max
Typ
Max
Typ
Max
Typ
Max
0.16
2.50
—
—
—
—
0.02
0.10
mA
0.16
2.50
0.07
1.60
—
—
0.02
0.10
mA
6.00
13.00 2.20 16.00 0.03 0.17
3.60
4.40
mA
Typical column: TA = 25°C
Maximum column: TA = 70°C
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
18
Freescale Semiconductor
Electrical Characteristics
4.2
Supply Power-Up/Power-Down Requirements and Restrictions
Any MCIMX31 board design must comply with the power-up and power-down sequence guidelines as
described in this section to guarantee reliable operation of the device. Any deviation from these sequences
may result in any or all of the following situations:
• Cause excessive current during power up phase
• Prevent the device from booting
• Cause irreversible damage to the MCIMX31 (worst-case scenario)
4.2.1
Powering Up
The Power On Reset (POR) pin must be kept asserted (low) throughout the power up sequence. Power up
logic must guarantee that all power sources reach their target values prior to the release (de-assertion) of
POR. Figure 2 shows the power-up sequence for silicon Revisions 1.2 and previous. Figure 3 and Figure 4
show the power-up sequence for silicon Revision 2.0.
NOTE
Stages need to be performed in the order shown; however, within each stage,
supplies can be powered up in any order. For example, supplies IOQVDD,
NVCC1, and NVCC3 through NVCC10 do not need to be powered up in the
order shown.
CAUTION
NVCC6 and NVCC9 must be at the same voltage potential. These supplies
are connected together on-chip to optimize ESD damage immunity.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
19
Electrical Characteristics
Hold POR Asserted
Notes:
1
1
2
QVCC, QVCC1, QVCC4
3
1
The board design must guarantee that supplies reach 90% level before transition
to the next state, using Power Management IC or other means.
The NVCC1 supply must not precede IOQVDD by more than 0.2 V until IOQVDD
has reached 1.5 V. If IOQVDD is powered up first, there are no restrictions.
It is allowable for FVCC, MVCC, SVCC, and UVCC to be up after FUSE_VDD.
1, 2
IOQVDD, NVCC1, NVCC3–10
NVCC2, NVCC21, NVCC22
FUSE_VDD
1, 3
1
FVCC, MVCC,
1
SVCC, UVCC
Release POR
Figure 2. Power-Up Sequence for Silicon Revisions 1.2 and Previous
4.2.1.1
Power-Up Sequence for Silicon Revision 2
Silicon revision 2.0 offers two options for power-up sequencing. Option 1 is backwards compatible with
silicon revision 1.2 and earlier versions of the IC. It should be noted that using option 1 on silicon Rev. 2.0
introduces a slight increase in current drain on IOQVDD when IOQVDD is raised before NVCC21. The
expected resulting increase is in the range of 3 mA to 5 mA, which does not pose a risk to the IC.
Option 2 is an alternative power-up sequence that allows the powering up of NVCC2, NVCC21, NVCC22
with IOQVDD, NVCC1, and NVCC3-10 without producing a current drain increase on IOQVDD.
These two power-up options on the 2.0 silicon allow the user to select the optimum power-up sequence for
their application.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
20
Freescale Semiconductor
Electrical Characteristics
Notes:
1
Hold POR Asserted
2
QVCC, QVCC1, QVCC4
1
3
1, 2
IOQVDD, NVCC1, NVCC3–10
4
NVCC2, NVCC21, NVCC22
1, 3, 5
1,3
FVCC, MVCC, SVCC, UVCC
5
4
The board design must guarantee that supplies reach
90% level before transition to the next state, using Power
Management IC or other means.
The NVCC1 supply must not precede IOQVDD by more
than 0.2 V until IOQVDD has reached 1.5 V. If IOQVDD
is powered up first, there are no restrictions.
The parallel paths in the flow indicate that supply group
NVCC2, NVCC21, and NVCC22, and supply group
FVCC, MVCC, SVCC, and UVCC ramp-ups are
independent. Note that this power-up sequence is
backward compatible to Silicon Revs. 1.15 and 1.2,
because NVCC2x ramp-up proceeding PLL supplies is
allowed.
Unlike the power-up sequence for Silicon Revision 1.2,
FUSE_VDD should not be driven on power-up for Silicon
Revision 2.0. This supply is dedicated for fuse burning
(programming), and should not be driven upon boot-up.
Raising IOQVDD before NVCC21 produces a slight
increase in current drain on IOQVDD of approximately
3–5 mA. The current increase will not damage the IC.
Refer to Errata ID TLSbo91750 for details.
Release POR
Figure 3. Option 1 Power-Up Sequence (Silicon Revision 2.0)
Notes:
1
Hold POR Asserted
2
QVCC, QVCC1, QVCC4
1
3
1, 2,3
IOQVDD, NVCC1, NVCC3–10, NVCC2, NVCC21, NVCC22
4
The board design must guarantee that supplies reach
90% level before transition to the next state, using Power
Management IC or other means.
The NVCC1 supply must not precede IOQVDD by more
than 0.2 V until IOQVDD has reached 1.5 V. If IOQVDD
is powered up first, there are no restrictions.
Raising NVCC2, NVCC21, and NVCC22 at the same
time as IOQVDD does not produce the slight increase in
current drain on IOQVDD (as described in Figure 3,
Note 5).
Unlike the power-up sequence for Silicon Revision 1.2,
FUSE_VDD should not be driven on power-up for Silicon
Revision 2.0. This supply is dedicated for fuse burning
(programming), and should not be driven upon boot-up.
1
FVCC, MVCC, SVCC, UVCC
4
Release POR
Figure 4. Option 2 Power-Up Sequence (Silicon Revision 2.0)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
21
Electrical Characteristics
4.2.2
Powering Down
The power-down sequence prior to silicon Revision 2.0 should be completed as follows:
1. Lower the FUSE_VDD supply (when in write mode).
2. Lower the remaining supplies.
For silicon revisions beginning with Revision 2.0 there is no special requirements for power down
sequence.
4.3
Module-Level Electrical Specifications
This section contains the MCIMX31 electrical information including timing specifications, arranged in
alphabetical order by module name.
4.3.1
I/O Pad (PADIO) Electrical Specifications
This section specifies the AC/DC characterization of functional I/O of the MCIMX31. There are two main
types of I/O: regular and DDR. In this document, the “Regular” type is referred to as GPIO.
4.3.1.1
DC Electrical Characteristics
The MCIMX31 I/O parameters appear in Table 15 for GPIO. See Table 8 for temperature and supply
voltage ranges.
NOTE
The term NVCC in this section refers to the associated supply rail of an
input or output. The association is shown in the Signal Multiplexing chapter
of the reference manual. NVCC for Table 15 refers to NVCC1 and
NVCC3–10; QVCC refers to QVCC, QVCC1, and QVCC4.
Table 15. GPIO DC Electrical Parameters
Parameter
High-level output voltage
Low-level output voltage
Symbol
Test Conditions
Min
Typ
Max
Units
VOH
IOH = –1 mA
NVCC –0.15
—
—
V
IOH = specified Drive
0.8*NVCC
—
—
V
IOL = 1 mA
—
—
0.15
V
IOL = specified Drive
—
—
0.2*NVCC
V
VOH =0.8*NVCC
Std Drive
High Drive
Max Drive
—
—
mA
–2
–4
–8
VOH =0.8*NVCC
Std Drive
High Drive
Max Drive
—
—
mA
–4
–6
–8
VOL
High-level output current, slow slew rate
High-level output current, fast slew rate
IOH_S
IOH_F
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
22
Freescale Semiconductor
Electrical Characteristics
Table 15. GPIO DC Electrical Parameters (continued)
Parameter
Low-level output current, slow slew rate
Low-level output current, fast slew rate
Symbol
Test Conditions
Min
IOL_S
VOL =0.2*NVCC
Std Drive
High Drive
Max Drive
2
4
8
VOL =0.2*NVCC
Std Drive
High Drive
Max Drive
4
6
8
IOL_F
Typ
Max
Units
—
—
mA
—
—
mA
High-Level DC input voltage
VIH
—
0.7*NVCC
—
NVCC
V
Low-Level DC input voltage
VIL
—
0
—
0.3*QVCC
V
Input Hysteresis
VHYS
Hysteresis enabled
0.25
—
—
V
Schmitt trigger VT+
VT +
Hysteresis enabled
0.5*QVCC
—
—
V
Schmitt trigger VT–
VT –
Hysteresis enabled
—
—
0.5*QVCC
V
Pull-up resistor (100 kΩ PU)
RPU
—
—
100
—
Pull-down resistor (100 kΩ PD)
RPD
—
—
100
—
Input current (no PU/PD)
IIN
VI = NVCC or GND
—
—
±1
μA
Input current (100 kΩ PU)
IIN
VI = 0
VI = NVCC
—
—
25
0.1
μA
μA
Input current (100 kΩ PD)
IIN
VI = 0
VI = NVCC
—
—
0.25
28
μA
μA
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
—
—
±2
μA
kΩ
The MCIMX31 I/O parameters appear in Table 16 for DDR (Double Data Rate). See Table 8, "Operating
Ranges," on page 13 for temperature and supply voltage ranges.
NOTE
NVCC for Table 16 refers to NVCC2, NVCC21, and NVCC22.
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter
High-level output voltage
Low-level output voltage
High-level output current
Symbol
Test Conditions
Min
Typ
Max
Units
VOH
IOH = –1 mA
NVCC –0.12
—
—
V
IOH = specified Drive
0.8*NVCC
—
—
V
IOL = 1 mA
—
—
0.08
V
IOL = specified Drive
—
—
0.2*NVCC
V
VOH =0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
—
—
mA
–3.6
–7.2
–10.8
–14.4
VOL
IOH
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
23
Electrical Characteristics
Table 16. DDR (Double Data Rate) I/O DC Electrical Parameters (continued)
Parameter
Low-level output current
Symbol
Test Conditions
Min
IOL
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
3.6
7.2
10.8
14.4
Typ
Max
Units
—
—
mA
High-Level DC input voltage
VIH
—
0.7*NVCC
Low-Level DC input voltage
VIL
—
–0.3
0
0.3*NVCC
V
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
—
—
±2
μA
1
NVCC NVCC+0.3
V
Use of DDR Drive can result in excessive overshoot and ringing.
4.3.2
AC Electrical Characteristics
Figure 5 depicts the load circuit for outputs. Figure 6 depicts the output transition time waveform. The
range of operating conditions appears in Table 17 for slow general I/O, Table 18 for fast general I/O, and
Table 19 for DDR I/O (unless otherwise noted).
From Output
Under Test
Test Point
CL
CL includes package, probe and fixture capacitance
Figure 5. Load Circuit for Output
NVCC
80%
80%
20%
20%
Output (at I/O)
0V
PA1
PA1
Figure 6. Output Transition Time Waveform
Table 17. AC Electrical Characteristics of Slow1 General I/O
ID
PA1
1
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.92
1.5
1.95
2.98
3.17
4.75
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
1.52
2.75
—
4.81
8.42
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
2.79
5.39
—
8.56
16.43
ns
Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
24
Freescale Semiconductor
Electrical Characteristics
Table 18. AC Electrical Characteristics of Fast1 General I/O 2
ID
PA1
1
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.68
1.34
1.33
2.6
2.07
4.06
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
.91
1.79
1.77
3.47
2.74
5.41
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
1.36
2.68
2.64
5.19
4.12
8.11
ns
Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
Use of GPIO in fast mode with the associated NVCC > 1.95 V can result in excessive overshoot and ringing.
2
Table 19. AC Electrical Characteristics of DDR I/O
ID
PA1
1
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
Output Transition Times (DDR Drive)1
tpr
25 pF
50 pF
0.51
0.97
0.82
1.58
1.28
2.46
ns
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.67
1.29
1.08
2.1
1.69
3.27
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
.99
1.93
1.61
3.13
2.51
4.89
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
1.96
3.82
3.19
6.24
4.99
9.73
ns
Use of DDR Drive can result in excessive overshoot and ringing.
4.3.3
Clock Amplifier Module (CAMP) Electrical Characteristics
This section outlines the Clock Amplifier Module (CAMP) specific electrical characteristics. Table 20
shows clock amplifier electrical characteristics.
Table 20. Clock Amplifier Electrical Characteristics for CKIH Input
Parameter
Min
Typ
Max
Units
Input Frequency
15
—
75
MHz
VIL (for square wave input)
0
—
0.3
V
VIH (for square wave input)
(VDD 1– 0.25)
—
3
V
—
VDD
Vp-p
50
55
%
Sinusoidal Input Amplitude
Duty Cycle
1
2
0.4
45
2
VDD is the supply voltage of CAMP. See reference manual.
This value of the sinusoidal input will be measured through characterization.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
25
Electrical Characteristics
4.3.4
1-Wire Electrical Specifications
Figure 7 depicts the RPP timing, and Table 21 lists the RPP timing parameters.
OWIRE Tx
“Reset Pulse”
DS2502 Tx
“Presence Pulse”
OW2
1-Wire bus
(BATT_LINE)
OW3
OW1
OW4
Figure 7. Reset and Presence Pulses (RPP) Timing Diagram
Table 21. RPP Sequence Delay Comparisons Timing Parameters
ID
Parameters
Symbol
Min
Typ
Max
Units
OW1
Reset Time Low
tRSTL
480
511
—
µs
OW2
Presence Detect High
tPDH
15
—
60
µs
OW3
Presence Detect Low
tPDL
60
—
240
µs
OW4
Reset Time High
tRSTH
480
512
—
µs
Figure 8 depicts Write 0 Sequence timing, and Table 22 lists the timing parameters.
OW6
1-Wire bus
(BATT_LINE)
OW5
Figure 8. Write 0 Sequence Timing Diagram
Table 22. WR0 Sequence Timing Parameters
ID
Parameter
OW5
Write 0 Low Time
OW6
Transmission Time Slot
Symbol
Min
Typ
Max
Units
tWR0_low
60
100
120
µs
tSLOT
OW5
117
120
µs
Figure 9 depicts Write 1 Sequence timing, Figure 10 depicts the Read Sequence timing, and Table 23 lists
the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
26
Freescale Semiconductor
Electrical Characteristics
OW8
1-Wire bus
(BATT_LINE)
OW7
Figure 9. Write 1 Sequence Timing Diagram
OW8
1-Wire bus
(BATT_LINE)
OW7
OW9
Figure 10. Read Sequence Timing Diagram
Table 23. WR1/RD Timing Parameters
ID
4.3.5
Parameter
Symbol
Min
Typ
Max
Units
OW7
Write 1 / Read Low Time
tLOW1
1
5
15
µs
OW8
Transmission Time Slot
tSLOT
60
117
120
µs
OW9
Release Time
tRELEASE
15
—
45
µs
ATA Electrical Specifications (ATA Bus, Bus Buffers)
This section discusses ATA parameters. For a detailed description, refer to the ATA specification.
The user needs to use level shifters for 3.3 Volt or 5.0 Volt compatibility on the ATA interface.
The use of bus buffers introduces delay on the bus and introduces skew between signal lines. These factors
make it difficult to operate the bus at the highest speed (UDMA-5) when bus buffers are used. If fast
UDMA mode operation is needed, this may not be compatible with bus buffers.
Another area of attention is the slew rate limit imposed by the ATA specification on the ATA bus.
According to this limit, any signal driven on the bus should have a slew rate between 0.4 and 1.2 V/ns with
a 40 pF load. Not many vendors of bus buffers specify slew rate of the outgoing signals.
When bus buffers are used, the ata_data bus buffer is special. This is a bidirectional bus buffer, so a
direction control signal is needed. This direction control signal is ata_buffer_en. When its high, the bus
should drive from host to device. When its low, the bus should drive from device to host. Steering of the
signal is such that contention on the host and device tri-state busses is always avoided.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
27
Electrical Characteristics
4.3.5.1
Timing Parameters
In the timing equations, some timing parameters are used. These parameters depend on the implementation
of the ATA interface on silicon, the bus buffer used, the cable delay and cable skew. Table 24 shows ATA
timing parameters.
Table 24. ATA Timing Parameters
Name
T
ti_ds
ti_dh
Bus clock period (ipg_clk_ata)
peripheral clock
frequency
Set-up time ata_data to ata_iordy edge (UDMA-in only)
UDMA0
UDMA1
UDMA2, UDMA3
UDMA4
UDMA5
15 ns
10 ns
7 ns
5 ns
4 ns
Hold time ata_iordy edge to ata_data (UDMA-in only)
UDMA0, UDMA1, UDMA2, UDMA3, UDMA4
UDMA5
5.0 ns
4.6 ns
tco
Propagation delay bus clock L-to-H to
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data,
ata_buffer_en
12.0 ns
tsu
Set-up time ata_data to bus clock L-to-H
8.5 ns
tsui
Set-up time ata_iordy to bus clock H-to-L
8.5 ns
thi
Hold time ata_iordy to bus clock H to L
2.5 ns
tskew1
Max difference in propagation delay bus clock L-to-H to any of following signals
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data
(write), ata_buffer_en
7 ns
tskew2
Max difference in buffer propagation delay for any of following signals
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_dior, ata_diow, ata_dmack, ata_data
(write), ata_buffer_en
transceiver
tskew3
Max difference in buffer propagation delay for any of following signals ata_iordy, ata_data
(read)
transceiver
Max buffer propagation delay
transceiver
tbuf
1
Value/
Contributing Factor1
Description
tcable1
Cable propagation delay for ata_data
cable
tcable2
Cable propagation delay for control signals ata_dior, ata_diow, ata_iordy, ata_dmack
cable
tskew4
Max difference in cable propagation delay between ata_iordy and ata_data (read)
cable
tskew5
Max difference in cable propagation delay between (ata_dior, ata_diow, ata_dmack) and
ata_cs0, ata_cs1, ata_da2, ata_da1, ata_da0, ata_data(write)
cable
tskew6
Max difference in cable propagation delay without accounting for ground bounce
cable
Values provided where applicable.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
28
Freescale Semiconductor
Electrical Characteristics
4.3.5.2
PIO Mode Timing
Figure 11 shows timing for PIO read, and Table 25 lists the timing parameters for PIO read.
Figure 11. PIO Read Timing Diagram
Table 25. PIO Read Timing Parameters
ATA
Parameter
Parameter from Figure 11
Value
Controlling
Variable
t1
t1
t1 (min) = time_1 * T – (tskew1 + tskew2 + tskew5)
time_1
t2
t2r
t2 min) = time_2r * T – (tskew1 + tskew2 + tskew5)
time_2r
t9
t9
t9 (min) = time_9 * T – (tskew1 + tskew2 + tskew6)
time_3
t5
t5
t5 (min) = tco + tsu + tbuf + tbuf + tcable1 + tcable2
If not met, increase
time_2
t6
t6
0
tA
tA
tA (min) = (1.5 + time_ax) * T – (tco + tsui + tcable2 + tcable2 + 2*tbuf)
trd
trd1
t0
—
—
trd1 (max) = (–trd) + (tskew3 + tskew4)
trd1 (min) = (time_pio_rdx – 0.5)*T – (tsu + thi)
(time_pio_rdx – 0.5) * T > tsu + thi + tskew3 + tskew4
t0 (min) = (time_1 + time_2 + time_9) * T
time_ax
time_pio_rdx
time_1, time_2r, time_9
Figure 12 shows timing for PIO write, and Table 26 lists the timing parameters for PIO write.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
29
Electrical Characteristics
Figure 12. Multiword DMA (MDMA) Timing
Table 26. PIO Write Timing Parameters
ATA
Parameter
Parameter from Figure 12
Controlling
Variable
Value
t1
t1
t1 (min) = time_1 * T – (tskew1 + tskew2 + tskew5)
time_1
t2
t2w
t9
t9
t9 (min) = time_9 * T – (tskew1 + tskew2 + tskew6)
t3
—
t3 (min) = (time_2w – time_on)* T – (tskew1 + tskew2 +tskew5)
t4
t4
t4 (min) = time_4 * T – tskew1
time_4
tA
tA
tA = (1.5 + time_ax) * T – (tco + tsui + tcable2 + tcable2 + 2*tbuf)
time_ax
t0
—
t0(min) = (time_1 + time_2 + time_9) * T
—
—
Avoid bus contention when switching buffer on by making ton long enough.
—
—
—
Avoid bus contention when switching buffer off by making toff long enough.
—
t2 (min) = time_2w * T – (tskew1 + tskew2 + tskew5)
time_2w
time_9
If not met, increase
time_2w
time_1, time_2r,
time_9
Figure 13 shows timing for MDMA read, Figure 14 shows timing for MDMA write, and Table 27 lists the
timing parameters for MDMA read and write.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
30
Freescale Semiconductor
Electrical Characteristics
Figure 13. MDMA Read Timing Diagram
Figure 14. MDMA Write Timing Diagram
Table 27. MDMA Read and Write Timing Parameters
ATA
Parameter
Parameter
from
Figure 13,
Figure 14
tm, ti
tm
tm (min) = ti (min) = time_m * T – (tskew1 + tskew2 + tskew5)
time_m
td
td, td1
td1.(min) = td (min) = time_d * T – (tskew1 + tskew2 + tskew6)
time_d
tk
tk
tk.(min) = time_k * T – (tskew1 + tskew2 + tskew6)
time_k
t0
—
t0 (min) = (time_d + time_k) * T
tg(read)
tgr
tgr (min-read) = tco + tsu + tbuf + tbuf + tcable1 + tcable2
tgr.(min-drive) = td – te(drive)
tf(read)
tfr
tfr (min-drive) = 0
tg(write)
—
tg (min-write) = time_d * T – (tskew1 + tskew2 + tskew5)
time_d
tf(write)
—
tf (min-write) = time_k * T – (tskew1 + tskew2 + tskew6)
time_k
tL
—
tL (max) = (time_d + time_k–2)*T – (tsu + tco + 2*tbuf + 2*tcable2)
tn, tj
tkjn
tn= tj= tkjn = (max(time_k,. time_jn) * T – (tskew1 + tskew2 + tskew6)
—
ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
Value
Controlling
Variable
time_d, time_k
time_d
—
time_d, time_k
time_jn
—
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
31
Electrical Characteristics
4.3.5.3
UDMA In Timing
Figure 15 shows timing when the UDMA in transfer starts, Figure 16 shows timing when the UDMA in
host terminates transfer, Figure 17 shows timing when the UDMA in device terminates transfer, and
Table 28 lists the timing parameters for UDMA in burst.
Figure 15. UDMA In Transfer Starts Timing Diagram
Figure 16. UDMA In Host Terminates Transfer Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
32
Freescale Semiconductor
Electrical Characteristics
Figure 17. UDMA In Device Terminates Transfer Timing Diagram
Table 28. UDMA In Burst Timing Parameters
ATA
Parameter
Parameter
from
Figure 15,
Figure 16,
Figure 17
tack
tack
tack (min) = (time_ack * T) – (tskew1 + tskew2)
time_ack
tenv
tenv
tenv (min) = (time_env * T) – (tskew1 + tskew2)
tenv (max) = (time_env * T) + (tskew1 + tskew2)
time_env
tds
tds1
tds – (tskew3) – ti_ds > 0
tdh
tdh1
tdh – (tskew3) – ti_dh > 0
tcyc
tc1
(tcyc – tskew) > T
trp
trp
trp (min) = time_rp * T – (tskew1 + tskew2 + tskew6)
time_rp
time_rp
1
Description
Controlling Variable
tskew3, ti_ds, ti_dh
should be low enough
T big enough
—
tx1
(time_rp * T) – (tco + tsu + 3T + 2 *tbuf + 2*tcable2) > trfs (drive)
tmli
tmli1
tmli1 (min) = (time_mlix + 0.4) * T
time_mlix
tzah
tzah
tzah (min) = (time_zah + 0.4) * T
time_zah
tdzfs
tdzfs
tdzfs = (time_dzfs * T) – (tskew1 + tskew2)
time_dzfs
tcvh
tcvh
tcvh = (time_cvh *T) – (tskew1 + tskew2)
time_cvh
—
ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
—
1
There is a special timing requirement in the ATA host that requires the internal DIOW to go only high 3 clocks after the last
active edge on the DSTROBE signal. The equation given on this line tries to capture this constraint.
2. Make ton and toff big enough to avoid bus contention
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
33
Electrical Characteristics
4.3.5.4
UDMA Out Timing
Figure 18 shows timing when the UDMA out transfer starts, Figure 19 shows timing when the UDMA out
host terminates transfer, Figure 20 shows timing when the UDMA out device terminates transfer, and
Table 29 lists the timing parameters for UDMA out burst.
Figure 18. UDMA Out Transfer Starts Timing Diagram
Figure 19. UDMA Out Host Terminates Transfer Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
34
Freescale Semiconductor
Electrical Characteristics
Figure 20. UDMA Out Device Terminates Transfer Timing Diagram
Table 29. UDMA Out Burst Timing Parameters
ATA
Parameter
Parameter
from
Figure 18,
Figure 19,
Figure 20
tack
tack
tack (min) = (time_ack * T) – (tskew1 + tskew2)
time_ack
tenv
tenv
tenv (min) = (time_env * T) – (tskew1 + tskew2)
tenv (max) = (time_env * T) + (tskew1 + tskew2)
time_env
tdvs
tdvs
tdvs = (time_dvs * T) – (tskew1 + tskew2)
time_dvs
tdvh
tdvh
tdvs = (time_dvh * T) – (tskew1 + tskew2)
time_dvh
tcyc
tcyc
tcyc = time_cyc * T – (tskew1 + tskew2)
time_cyc
t2cyc
—
t2cyc = time_cyc * 2 * T
time_cyc
trfs1
trfs
trfs = 1.6 * T + tsui + tco + tbuf + tbuf
—
tdzfs
tss
tss
tmli
tdzfs_mli
tli
Value
tdzfs = time_dzfs * T – (tskew1)
tss = time_ss * T – (tskew1 + tskew2)
Controlling
Variable
—
time_dzfs
time_ss
tdzfs_mli =max (time_dzfs, time_mli) * T – (tskew1 + tskew2)
—
tli1
tli1 > 0
—
tli
tli2
tli2 > 0
—
tli
tli3
tli3 > 0
—
tcvh
tcvh
tcvh = (time_cvh *T) – (tskew1 + tskew2)
—
ton
toff
ton = time_on * T – tskew1
toff = time_off * T – tskew1
time_cvh
—
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
35
Electrical Characteristics
4.3.6
AUDMUX Electrical Specifications
The AUDMUX provides a programmable interconnect logic for voice, audio and data routing between
internal serial interfaces (SSI) and external serial interfaces (audio and voice codecs). The AC timing of
AUDMUX external pins is hence governed by the SSI module. Please refer to their respective electrical
specifications.
4.3.7
CSPI Electrical Specifications
This section describes the electrical information of the CSPI.
4.3.7.1
CSPI Timing
Figure 21 and Figure 22 depict the master mode and slave mode timings of CSPI, and Table 30 lists the
timing parameters.
SPI_RDY
CS11
SSx
CS1
CS3
CS2
CS6
CS5
CS3
CS4
SCLK
CS2
CS7 CS8
MOSI
CS9
CS10
MISO
Figure 21. CSPI Master Mode Timing Diagram
SSx
CS1
CS3
CS2
CS6
CS5
CS3
CS4
SCLK
CS7 CS8
CS2
MISO
CS9
CS10
MOSI
Figure 22. CSPI Slave Mode Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
36
Freescale Semiconductor
Electrical Characteristics
Table 30. CSPI Interface Timing Parameters
ID
1
Parameter
Symbol
Min
Max
Units
CS1
SCLK Cycle Time
tclk
60
—
ns
CS2
SCLK High or Low Time
tSW
30
—
ns
CS3
SCLK Rise or Fall
tRISE/FALL
—
7.6
ns
CS4
SSx pulse width
tCSLH
25
—
ns
CS5
SSx Lead Time (CS setup time)
tSCS
25
—
ns
CS6
SSx Lag Time (CS hold time)
tHCS
25
—
ns
CS7
Data Out Setup Time
tSmosi
5
—
ns
CS8
Data Out Hold Time
tHmosi
5
—
ns
CS9
Data In Setup Time
tSmiso
6
—
ns
CS10
Data In Hold Time
tHmiso
5
—
ns
CS11
SPI_RDY Setup Time1
tSRDY
—
—
ns
SPI_RDY is sampled internally by ipg_clk and is asynchronous to all other CSPI signals.
4.3.8
DPLL Electrical Specifications
The three PLL’s of the MCIMX31 (MCU, USB, and Serial PLL) are all based on same DPLL design. The
characteristics provided herein apply to all of them, except where noted explicitly. The PLL characteristics
are provided based on measurements done for both sources—external clock source (CKIH), and FPM
(Frequency Pre-Multiplier) source.
4.3.8.1
Electrical Specifications
Table 31 lists the DPLL specification.
Table 31. DPLL Specifications
Parameter
Min
Typ
Max
Unit
Comments
CKIH frequency
15
261
752
MHz
—
CKIL frequency
(Frequency Pre-multiplier (FPM) enable mode)
—
32; 32.768, 38.4
—
kHz FPM lock time ≈ 480 µs.
Predivision factor (PD bits)
1
—
16
PLL reference frequency range after Predivider
15
—
35
MHz 15 ≤ CKIH frequency/PD ≤ 35 MHz
15 ≤ FPM output/PD ≤ 35 MHz
532
240
MHz
—
—
PLL output frequency range:
MPLL and SPLL 52
UPLL 190
—
—
Maximum allowed reference clock phase noise.
—
—
± 100
ps
Frequency lock time
(FOL mode or non-integer MF)
—
—
398
—
—
Cycles of divided reference clock.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
37
Electrical Characteristics
Table 31. DPLL Specifications (continued)
Parameter
Min
Typ
Max
Unit
Comments
Phase lock time
—
—
100
µs
Maximum allowed PLL supply voltage ripple
—
—
25
mV Fmodulation < 50 kHz
Maximum allowed PLL supply voltage ripple
—
—
20
mV 50 kHz < Fmodulation < 300 kHz
Maximum allowed PLL supply voltage ripple
—
—
25
mV Fmodulation > 300 kHz
PLL output clock phase jitter
—
—
5.2
ns
Measured on CLKO pin
PLL output clock period jitter
—
—
420
ps
Measured on CLKO pin
In addition to the frequency
1
The user or board designer must take into account that the use of a frequency other than 26 MHz would require adjustment to
the DPTC–DVFS table, which is incorporated into operating system code.
2 The PLL reference frequency must be ≤ 35 MHz. Therefore, for frequencies between 35 MHz and 70 MHz, program the
predivider to divide by 2 or more. If the CKIH frequency is above 70 MHz, program the predivider to 3 or more. For PD bit
description, see the reference manual.
4.3.9
EMI Electrical Specifications
This section provides electrical parametrics and timings for EMI module.
4.3.9.1
NAND Flash Controller Interface (NFC)
The NFC supports normal timing mode, using two flash clock cycles for one access of RE and WE. AC
timings are provided as multiplications of the clock cycle and fixed delay. Figure 23, Figure 24, Figure 25,
and Figure 26 depict the relative timing requirements among different signals of the NFC at module level,
for normal mode, and Table 32 lists the timing parameters.
NFCLE
NF2
NF1
NF3
NF4
NFCE
NF5
NFWE
NF6
NF7
NFALE
NF8
NF9
NFIO[7:0]
Command
Figure 23. Command Latch Cycle Timing DIagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
38
Freescale Semiconductor
Electrical Characteristics
NFCLE
NF1
NF4
NF3
NFCE
NF10
NF11
NF5
NFWE
NF7
NF6
NFALE
NF8
NF9
Address
NFIO[7:0]
Figure 24. Address Latch Cycle Timing DIagram
NFCLE
NF1
NF3
NFCE
NF10
NF11
NF5
NFWE
NF7
NF6
NFALE
NF8
NF9
NFIO[15:0]
Data to NF
Figure 25. Write Data Latch Cycle Timing DIagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
39
Electrical Characteristics
NFCLE
NFCE
NF14
NF15
NF13
NFRE
NF17
NF16
NFRB
NF12
NFIO[15:0]
Data from NF
Figure 26. Read Data Latch Cycle Timing DIagram
Table 32. NFC Timing Parameters1
ID
1
2
Parameter
Symbol
Timing
T = NFC Clock Cycle2
Example Timing for
NFC Clock ≈ 33 MHz
T = 30 ns
Min
Max
Min
Max
Unit
NF1
NFCLE Setup Time
tCLS
T–1.0 ns
—
29
—
ns
NF2
NFCLE Hold Time
tCLH
T–2.0 ns
—
28
—
ns
NF3
NFCE Setup Time
tCS
T–1.0 ns
—
29
—
ns
NF4
NFCE Hold Time
tCH
T–2.0 ns
—
28
—
ns
NF5
NF_WP Pulse Width
tWP
NF6
NFALE Setup Time
tALS
T
—
30
—
ns
NF7
NFALE Hold Time
tALH
T–3.0 ns
—
27
—
ns
NF8
Data Setup Time
tDS
T
—
30
—
ns
NF9
Data Hold Time
tDH
T–5.0 ns
—
25
—
ns
T–1.5 ns
28.5
ns
NF10 Write Cycle Time
tWC
2T
60
ns
NF11 NFWE Hold Time
tWH
T–2.5 ns
27.5
ns
NF12 Ready to NFRE Low
tRR
6T
—
180
—
ns
NF13 NFRE Pulse Width
tRP
1.5T
—
45
—
ns
NF14 READ Cycle Time
tRC
2T
—
60
—
ns
NF15 NFRE High Hold Time
tREH
0.5T–2.5 ns
12.5
—
ns
NF16 Data Setup on READ
tDSR
N/A
10
—
ns
NF17 Data Hold on READ
tDHR
N/A
0
—
ns
The flash clock maximum frequency is 50 MHz.
Subject to DPLL jitter specification on Table 31, "DPLL Specifications," on page 37.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
40
Freescale Semiconductor
Electrical Characteristics
NOTE
High is defined as 80% of signal value and low is defined as 20% of signal
value.
Timing for HCLK is 133 MHz and internal NFC clock (flash clock) is
approximately 33 MHz (30 ns). All timings are listed according to this NFC
clock frequency (multiples of NFC clock phases), except NF16 and NF17,
which are not NFC clock related.
4.3.9.2
Wireless External Interface Module (WEIM)
All WEIM output control signals may be asserted and deasserted by internal clock related to BCLK rising
edge or falling edge according to corresponding assertion/negation control fields. Address always begins
related to BCLK falling edge but may be ended both on rising and falling edge in muxed mode according
to control register configuration. Output data begins related to BCLK rising edge except in muxed mode
where both rising and falling edge may be used according to control register configuration. Input data,
ECB and DTACK all captured according to BCLK rising edge time. Figure 27 depicts the timing of the
WEIM module, and Table 33 lists the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
41
Electrical Characteristics
WEIM Outputs Timing
WE22
WE21
...
BCLK
WE23
WE1
WE2
WE3
WE4
WE5
WE6
WE7
WE8
WE9
WE10
WE11
WE12
WE13
WE14
Address
CS[x]
RW
OE
EB[x]
LBA
Output Data
WEIM Inputs Timing
BCLK
WE16
Input Data
WE15
WE18
ECB
WE17
WE20
DTACK
WE19
Figure 27. WEIM Bus Timing Diagram
Table 33. WEIM Bus Timing Parameters
ID
Parameter
Min
Max
Unit
WE1
Clock fall to Address Valid
–0.5
2.5
ns
WE2
Clock rise/fall to Address Invalid
–0.5
5
ns
WE3
Clock rise/fall to CS[x] Valid
–3
3
ns
WE4
Clock rise/fall to CS[x] Invalid
–3
3
ns
WE5
Clock rise/fall to RW Valid
–3
3
ns
WE6
Clock rise/fall to RW Invalid
–3
3
ns
WE7
Clock rise/fall to OE Valid
–3
3
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
42
Freescale Semiconductor
Electrical Characteristics
Table 33. WEIM Bus Timing Parameters (continued)
ID
Parameter
Min
Max
Unit
WE8
Clock rise/fall to OE Invalid
–3
3
ns
WE9
Clock rise/fall to EB[x] Valid
–3
3
ns
WE10
Clock rise/fall to EB[x] Invalid
–3
3
ns
WE11
Clock rise/fall to LBA Valid
–3
3
ns
WE12
Clock rise/fall to LBA Invalid
–3
3
ns
WE13
Clock rise/fall to Output Data Valid
–2.5
4
ns
WE14
Clock rise to Output Data Invalid
–2.5
4
ns
WE15
Input Data Valid to Clock rise, FCE=0
FCE=1
8
2.5
—
WE16
Clock rise to Input Data Invalid, FCE=0
FCE=1
–2
–2
—
WE17
ECB setup time, FCE=0
FCE=1
6.5
3.5
—
WE18
ECB hold time, FCE=0
FCE=1
–2
2
—
WE19
DTACK setup time1
0
—
ns
WE20
DTACK hold time1
4.5
—
ns
WE21
BCLK High Level Width2, 3
—
T/2 – 3
ns
WE22
BCLK Low Level Width2, 3
—
T/2 – 3
ns
WE23
BCLK Cycle time2
15
—
ns
ns
ns
ns
ns
1
Applies to rising edge timing
BCLK parameters are being measured from the 50% VDD.
3 The actual cycle time is derived from the AHB bus clock frequency.
2
NOTE
High is defined as 80% of signal value and low is defined as 20% of signal
value.
Test conditions: load capacitance, 25 pF. Recommended drive strength for all
controls, address, and BCLK is Max drive.
Figure 28, Figure 29, Figure 30, Figure 31, Figure 32, and Figure 33 depict some examples of
basic WEIM accesses to external memory devices with the timing parameters mentioned in
Table 33 for specific control parameter settings.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
43
Electrical Characteristics
BCLK
WE2
WE1
V1
Last Valid Address
ADDR
Next Address
WE3
WE4
WE11
WE12
WE7
WE8
WE9
WE10
CS[x]
RW
LBA
OE
EB[y]
WE16
V1
DATA
WE15
Figure 28. Asynchronous Memory Timing Diagram for Read Access—WSC=1
BCLK
WE2
WE1
ADDR
CS[x]
Last Valid Address
WE3
WE4
WE5
WE6
RW
LBA
Next Address
V1
WE11
WE12
OE
EB[y]
WE9
WE10
WE14
DATA
V1
WE13
Figure 29. Asynchronous Memory Timing Diagram for Write Access—
WSC=1, EBWA=1, EBWN=1, LBN=1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
44
Freescale Semiconductor
Electrical Characteristics
BCLK
WE1
WE2
ADDR Last Valid Addr
Address V1
Address V2
WE4
WE3
CS[x]
RW
WE11
LBA
WE12
WE8
WE7
OE
WE10
WE9
EB[y]
WE18
WE18
ECB
WE17
WE17
WE16
WE16
V1
V1+2
Halfword Halfword
DATA
WE15
V2
Halfword
V2+2
Halfword
WE15
Figure 30. Synchronous Memory Timing Diagram for Two Non-Sequential Read Accesses—
WSC=2, SYNC=1, DOL=0
BCLK
WE2
WE1
ADDR Last Valid Addr
CS[x]
RW
LBA
Address V1
WE3
WE4
WE5
WE6
WE11
WE12
OE
EB[y]
WE10
WE9
WE18
ECB
WE17
WE14
V1+4 V1+8 V1+12
V1
DATA
WE13
WE14
WE13
Figure 31. Synchronous Memory TIming Diagram for Burst Write Access—
BCS=1, WSC=4, SYNC=1, DOL=0, PSR=1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
45
Electrical Characteristics
BCLK
WE1
ADDR/
Last
Valid
Addr
M_DATA
CS[x]
RW
WE14
WE2
Write Data
Address V1
WE13
WE3
WE5
WE4
WE6
Write
WE11
WE12
LBA
OE
EB[y]
WE9
WE10
Figure 32. Muxed A/D Mode Timing Diagram for Asynchronous Write Access—
WSC=7, LBA=1, LBN=1, LAH=1
BCLK
WE1
ADDR/
Last
Valid
Addr
M_DATA
WE3
CS[x]
WE2
Address V1
WE16
Read Data
WE15
WE4
RW
WE11
WE12
LBA
WE7
OE
EB[y]
WE9
WE8
WE10
Figure 33. Muxed A/D Mode Timing Diagram for Asynchronous Read Access—
WSC=7, LBA=1, LBN=1, LAH=1, OEA=7
4.3.9.3
ESDCTL Electrical Specifications
Figure 34, Figure 35, Figure 36, Figure 37, Figure 38, and Figure 39 depict the timings pertaining to the
ESDCTL module, which interfaces Mobile DDR or SDR SDRAM. Table 34, Table 35, Table 36, Table 37,
Table 38, and Table 39 list the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
46
Freescale Semiconductor
Electrical Characteristics
SD1
SDCLK
SDCLK
SD2
SD3
SD4
CS
SD5
RAS
SD4
SD5
SD4
CAS
SD4
SD5
SD5
WE
SD6
SD7
ADDR
ROW/BA
COL/BA
SD8
SD10
SD9
DQ
Data
SD4
DQM
Note: CKE is high during the read/write cycle.
SD5
Figure 34. SDRAM Read Cycle Timing Diagram
Table 34. DDR/SDR SDRAM Read Cycle Timing Parameters
ID
Parameter
Symbol
Min
Max
Unit
SD1
SDRAM clock high-level width
tCH
3.4
4.1
ns
SD2
SDRAM clock low-level width
tCL
3.4
4.1
ns
SD3
SDRAM clock cycle time
tCK
7.5
—
ns
SD4
CS, RAS, CAS, WE, DQM, CKE setup time
tCMS
2.0
—
ns
SD5
CS, RAS, CAS, WE, DQM, CKE hold time
tCMH
1.8
—
ns
SD6
Address setup time
tAS
2.0
—
ns
SD7
Address hold time
tAH
1.8
—
ns
SD8
SDRAM access time
tAC
—
6.47
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
47
Electrical Characteristics
Table 34. DDR/SDR SDRAM Read Cycle Timing Parameters (continued)
ID
1
Parameter
Symbol
Min
Max
Unit
SD9
Data out hold time1
tOH
1.8
—
ns
SD10
Active to read/write command period
tRC
10
—
clock
Timing parameters are relevant only to SDR SDRAM. For the specific DDR SDRAM data related timing parameters, see
Table 38 and Table 39.
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value. SD1 + SD2 does not exceed 7.5 ns for 133 MHz.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 34 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
48
Freescale Semiconductor
Electrical Characteristics
SD1
SDCLK
SDCLK
SD2
SD3
SD4
CS
SD5
RAS
SD11
SD4
CAS
SD5
SD4
SD4
WE
SD5
SD5
SD12
SD7
SD6
ADDR
BA
COL/BA
ROW / BA
SD13
DQ
SD14
DATA
DQM
Figure 35. SDR SDRAM Write Cycle Timing Diagram
Table 35. SDR SDRAM Write Timing Parameters
ID
Parameter
Symbol
Min
Max
Unit
SD1
SDRAM clock high-level width
tCH
3.4
4.1
ns
SD2
SDRAM clock low-level width
tCL
3.4
4.1
ns
SD3
SDRAM clock cycle time
tCK
7.5
—
ns
SD4
CS, RAS, CAS, WE, DQM, CKE setup time
tCMS
2.0
—
ns
SD5
CS, RAS, CAS, WE, DQM, CKE hold time
tCMH
1.8
—
ns
SD6
Address setup time
tAS
2.0
—
ns
SD7
Address hold time
tAH
1.8
—
ns
SD11
Precharge cycle period1
tRP
1
4
clock
tRCD
1
8
clock
SD12
Active to read/write command
delay1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
49
Electrical Characteristics
Table 35. SDR SDRAM Write Timing Parameters (continued)
ID
1
Parameter
Symbol
Min
Max
Unit
SD13
Data setup time
tDS
2.0
—
ns
SD14
Data hold time
tDH
1.3
—
ns
SD11 and SD12 are determined by SDRAM controller register settings.
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 35 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
SD1
SDCLK
SDCLK
SD2
SD3
CS
RAS
SD11
CAS
SD10
SD10
WE
SD7
SD6
ADDR
BA
ROW/BA
Figure 36. SDRAM Refresh Timing Diagram
Table 36. SDRAM Refresh Timing Parameters
ID
Parameter
Symbol
Min
Max
Unit
SD1
SDRAM clock high-level width
tCH
3.4
4.1
ns
SD2
SDRAM clock low-level width
tCL
3.4
4.1
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
50
Freescale Semiconductor
Electrical Characteristics
Table 36. SDRAM Refresh Timing Parameters (continued)
ID
1
Parameter
Symbol
Min
Max
Unit
SD3
SDRAM clock cycle time
tCK
7.5
—
ns
SD6
Address setup time
tAS
1.8
—
ns
SD7
Address hold time
tAH
1.8
—
ns
SD10
Precharge cycle period1
tRP
1
4
clock
SD11
Auto precharge command period1
tRC
2
20
clock
SD10 and SD11 are determined by SDRAM controller register settings.
NOTE
SDR SDRAM CLK parameters are being measured from the 50%
point—that is, high is defined as 50% of signal value and low is defined as
50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 36 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
51
Electrical Characteristics
SDCLK
CS
RAS
CAS
WE
ADDR
BA
SD16
CKE
SD16
Don’t care
Figure 37. SDRAM Self-Refresh Cycle Timing Diagram
NOTE
The clock will continue to run unless both CKEs are low. Then the clock will
be stopped in low state.
Table 37. SDRAM Self-Refresh Cycle Timing Parameters
ID
SD16
Parameter
CKE output delay time
Symbol
Min
Max
Unit
tCKS
1.8
—
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
52
Freescale Semiconductor
Electrical Characteristics
SDCLK
SDCLK
SD20
SD19
DQS (output)
SD18
SD17
DQ (output)
DQM (output)
SD17
SD18
Data
Data
Data
Data
Data
Data
Data
Data
DM
DM
DM
DM
DM
DM
DM
DM
SD17
SD17
SD18
SD18
Figure 38. Mobile DDR SDRAM Write Cycle Timing Diagram
Table 38. Mobile DDR SDRAM Write Cycle Timing Parameters1
ID
1
Parameter
Symbol
Min
Max
Unit
SD17
DQ and DQM setup time to DQS
tDS
0.95
—
ns
SD18
DQ and DQM hold time to DQS
tDH
0.95
—
ns
SD19
Write cycle DQS falling edge to SDCLK output delay time.
tDSS
1.8
—
ns
SD20
Write cycle DQS falling edge to SDCLK output hold time.
tDSH
1.8
—
ns
Test condition: Measured using delay line 5 programmed as follows: ESDCDLY5[15:0] = 0x0703.
NOTE
SDRAM CLK and DQS related parameters are being measured from the
50% point—that is, high is defined as 50% of signal value and low is defined
as 50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 38 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
53
Electrical Characteristics
SDCLK
SDCLK
SD23
DQS (input)
SD22
SD21
DQ (input)
Data
Data
Data
Data
Data
Data
Data
Data
Figure 39. Mobile DDR SDRAM DQ versus DQS and SDCLK Read Cycle Timing Diagram
Table 39. Mobile DDR SDRAM Read Cycle Timing Parameters
ID
Parameter
SD21 DQS – DQ Skew (defines the Data valid window in read cycles related to DQS).
SD22 DQS DQ HOLD time from DQS
SD23 DQS output access time from SDCLK posedge
Symbol
Min Max Unit
tDQSQ
—
0.85
ns
tQH
2.3
—
ns
tDQSCK
—
6.7
ns
NOTE
SDRAM CLK and DQS related parameters are being measured from the
50% point—that is, high is defined as 50% of signal value and low is defined
as 50% of signal value.
The timing parameters are similar to the ones used in SDRAM data
sheets—that is, Table 39 indicates SDRAM requirements. All output signals
are driven by the ESDCTL at the negative edge of SDCLK and the
parameters are measured at maximum memory frequency.
4.3.10
ETM Electrical Specifications
ETM is an ARM protocol. The timing specifications in this section are given as a guide for a TPA that
supports TRACECLK frequencies up to 133 MHz.
Figure 40 depicts the TRACECLK timings of ETM, and Table 40 lists the timing parameters.
Figure 40. ETM TRACECLK Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
54
Freescale Semiconductor
Electrical Characteristics
Table 40. ETM TRACECLK Timing Parameters
ID
Parameter
Min
Max
Unit
Frequency dependent
—
ns
Tcyc
Clock period
Twl
Low pulse width
2
—
ns
Twh
High pulse width
2
—
ns
Tr
Clock and data rise time
—
3
ns
Tf
Clock and data fall time
—
3
ns
Figure 41 depicts the setup and hold requirements of the trace data pins with respect to TRACECLK, and
Table 41 lists the timing parameters.
Figure 41. Trace Data Timing Diagram
Table 41. ETM Trace Data Timing Parameters
ID
4.3.10.1
Parameter
Min
Max
Unit
Ts
Data setup
2
—
ns
Th
Data hold
1
—
ns
Half-Rate Clocking Mode
When half-rate clocking is used, the trace data signals are sampled by the TPA on both the rising and falling
edges of TRACECLK, where TRACECLK is half the frequency of the clock shown in Figure 41.
4.3.11
FIR Electrical Specifications
FIR implements asynchronous infrared protocols (FIR, MIR) that are defined by IrDA® (Infrared Data
Association). Refer to http://www.IrDA.org for details on FIR and MIR protocols.
4.3.12
Fusebox Electrical Specifications
Table 42. Fusebox Timing Characteristics
1
Ref. Num
Description
Symbol
Minimum
Typical
Maximum
Units
1
Program time for eFuse1
tprogram
125
—
—
µs
The program length is defined by the value defined in the epm_pgm_length[2:0] bits of the IIM module. The value to program
is based on a 32 kHz clock source (4 * 1/32 kHz = 125 µs).
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
55
Electrical Characteristics
4.3.13
I2C Electrical Specifications
This section describes the electrical information of the I2C Module.
4.3.13.1
I2C Module Timing
Figure 42 depicts the timing of I2C module. Table 43 lists the I2C module timing parameters where the I/O
supply is 2.7 V. 1
I2CLK
IC11
IC10
I2DAT
IC2
IC10
START
IC7
IC4
IC8
IC11
IC6
IC9
IC3
STOP
START
START
IC5
IC1
Figure 42. I2C Bus Timing Diagram
Table 43. I2C Module Timing Parameters—I2C Pin I/O Supply=2.7 V
Standard Mode
ID
Fast Mode
Parameter
Unit
Min
Max
Min
Max
IC1
I2CLK cycle time
10
—
2.5
—
μs
IC2
Hold time (repeated) START condition
4.0
—
0.6
—
μs
IC3
Set-up time for STOP condition
4.0
—
0.6
—
μs
IC4
Data hold time
01
3.45
01
0.92
μs
IC5
HIGH Period of I2CLK Clock
4.0
—
0.6
—
μs
IC6
LOW Period of the I2CLK Clock
4.7
—
1.3
—
μs
IC7
Set-up time for a repeated START condition
4.7
—
0.6
—
μs
—
ns
2
IC8
Data set-up time
250
—
1003
IC9
Bus free time between a STOP and START condition
4.7
—
1.3
IC10
Rise time of both I2DAT and I2CLK signals
—
1000
—
μs
20+0.1Cb
4
300
ns
4
300
ns
400
pF
IC11
Fall time of both I2DAT and I2CLK signals
—
300
20+0.1Cb
IC12
Capacitive load for each bus line (Cb)
—
400
—
1
A device must internally provide a hold time of at least 300 ns for I2DAT signal in order to bridge the undefined region of the
falling edge of I2CLK.
2 The maximum hold time has to be met only if the device does not stretch the LOW period (ID IC6) of the I2CLK signal.
3 A Fast-mode I2C-bus device can be used in a standard-mode I2C-bus system, but the requirement of set-up time (ID IC7) of
250 ns must then be met. This will automatically be the case if the device does not stretch the LOW period of the I2CLK signal.
If such a device does stretch the LOW period of the I2CLK signal, it must output the next data bit to the I2DAT line max_rise_time
(ID No IC10) + data_setup_time (ID No IC8) = 1000 + 250 = 1250 ns (according to the Standard-mode I2C-bus specification)
before the I2CLK line is released.
4
Cb = total capacitance of one bus line in pF.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
56
Freescale Semiconductor
Electrical Characteristics
4.3.14
IPU—Sensor Interfaces
4.3.14.1
Supported Camera Sensors
Table 44 lists the known supported camera sensors at the time of publication.
Table 44. Supported Camera Sensors1
Vendor
Model
Conexant
CX11646, CX204902, CX204502
Agilant
HDCP–2010, ADCS–10212, ADCS–10212
Toshiba
TC90A70
ICMedia
ICM202A, ICM1022
iMagic
IM8801
Transchip
TC5600, TC5600J, TC5640, TC5700, TC6000
Fujitsu
MB86S02A
Micron
MI–SOC–0133
Matsushita
MN39980
STMicro
W6411, W6500, W65012, W66002, W65522, STV09742
OmniVision
OV7620, OV6630
Sharp
LZ0P3714 (CCD)
Motorola
MC30300 (Python)2, SCM200142, SCM201142, SCM221142, SCM200272
National Semiconductor
LM96182
1
Freescale Semiconductor does not recommend one supplier over another and in no way suggests that these are the only
camera suppliers.
2 These sensors not validated at time of publication.
4.3.14.2
Functional Description
There are three timing modes supported by the IPU.
4.3.14.2.1
Pseudo BT.656 Video Mode
Smart camera sensors, which include imaging processing, usually support video mode transfer. They use
an embedded timing syntax to replace the SENSB_VSYNC and SENSB_HSYNC signals. The timing
syntax is defined by the BT.656 standard.
This operation mode follows the recommendations of ITU BT.656 specifications. The only control signal
used is SENSB_PIX_CLK. Start-of-frame and active-line signals are embedded in the data stream. An
active line starts with a SAV code and ends with a EAV code. In some cases, digital blanking is inserted in
between EAV and SAV code. The CSI decodes and filters out the timing-coding from the data stream, thus
recovering SENSB_VSYNC and SENSB_HSYNC signals for internal use.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
57
Electrical Characteristics
4.3.14.2.2
Gated Clock Mode
The SENSB_VSYNC, SENSB_HSYNC, and SENSB_PIX_CLK signals are used in this mode. See
Figure 43.
Active Line
Start of Frame
nth frame
n+1th frame
SENSB_VSYNC
SENSB_HSYNC
SENSB_PIX_CLK
SENSB_DATA[9:0]
invalid
invalid
1st byte
1st byte
Figure 43. Gated Clock Mode Timing Diagram
A frame starts with a rising edge on SENSB_VSYNC (all the timings correspond to straight polarity of the
corresponding signals). Then SENSB_HSYNC goes to high and hold for the entire line. Pixel clock is valid
as long as SENSB_HSYNC is high. Data is latched at the rising edge of the valid pixel clocks.
SENSB_HSYNC goes to low at the end of line. Pixel clocks then become invalid and the CSI stops
receiving data from the stream. For next line the SENSB_HSYNC timing repeats. For next frame the
SENSB_VSYNC timing repeats.
4.3.14.2.3
Non-Gated Clock Mode
The timing is the same as the gated-clock mode (described in Section 4.3.14.2.2, “Gated Clock Mode”),
except for the SENSB_HSYNC signal, which is not used. See Figure 44. All incoming pixel clocks are
valid and will cause data to be latched into the input FIFO. The SENSB_PIX_CLK signal is inactive (states
low) until valid data is going to be transmitted over the bus.
Start of Frame
nth frame
n+1th frame
SENSB_VSYNC
SENSB_PIX_CLK
SENSB_DATA[7:0]
invalid
invalid
1st byte
1st byte
Figure 44. Non-Gated Clock Mode Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
58
Freescale Semiconductor
Electrical Characteristics
The timing described in Figure 44 is that of a Motorola sensor. Some other sensors may have a slightly
different timing. The CSI can be programmed to support rising/falling-edge triggered SENSB_VSYNC;
active-high/low SENSB_HSYNC; and rising/falling-edge triggered SENSB_PIX_CLK.
4.3.14.3
Electrical Characteristics
Figure 45 depicts the sensor interface timing, and Table 45 lists the timing parameters.
1/IP1
SENSB_MCLK
(Sensor Input)
SENSB_PIX_CLK
(Sensor Output)
IP3
IP2
1/IP4
SENSB_DATA,
SENSB_VSYNC,
SENSB_HSYNC
Figure 45. Sensor Interface Timing Diagram
Table 45. Sensor Interface Timing Parameters1
ID
1
Parameter
Symbol
Min.
Max.
Units
IP1
Sensor input clock frequency
Fmck
0.01
133
MHz
IP2
Data and control setup time
Tsu
5
—
ns
IP3
Data and control holdup time
Thd
3
—
ns
IP4
Sensor output (pixel) clock frequency
Fpck
0.01
133
MHz
The timing specifications for Figure 45 are referenced to the rising edge of SENS_PIX_CLK when the
SENS_PIX_CLK_POL bit in the CSI_SENS_CONF register is cleared. When the SENS_PIX_CLK_POL is set,
the clock is inverted and all timing specifications will remain the same but are referenced to the falling edge of
the clock.
4.3.15
4.3.15.1
IPU—Display Interfaces
Supported Display Components
Table 46 lists the known supported display components at the time of publication.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
59
Electrical Characteristics
Table 46. Supported Display Components1
Type
Vendor
TFT displays
(memory-less)
Display controllers
Smart display modules
Digital video encoders
(for TV)
Model
Sharp (HR-TFT Super
Mobile LCD family)
LQ035Q7 DB02, LM019LC1Sxx
Samsung (QCIF and
QVGA TFT modules for
mobile phones)
LTS180S1-HF1, LTS180S3-HF1, LTS350Q1-PE1,
LTS350Q1-PD1, LTS220Q1-HE12
Toshiba (LTM series)
LTM022P8062, LTM04C380K2,
LTM018A02A2, LTM020P3322, LTM021P3372, LTM019P3342,
LTM022A7832, LTM022A05ZZ2
NEC
NL6448BC20-08E, NL8060BC31-27
Epson
S1D15xxx series, S1D19xxx series, S1D13713, S1D13715
Solomon Systech
SSD1301 (OLED), SSD1828 (LDCD)
Hitachi
HD66766, HD66772
ATI
W2300
Epson
L1F10043 T2, L1F10044 T2, L1F10045 T2, L2D220022, L2D200142,
L2F500322, L2D25001 T2
Hitachi
120 160 65K/4096 C-STN (#3284 LTD-1398-2) based on HD 66766
controller
Densitron Europe LTD
All displays with MPU 80/68K series interface and serial peripheral
interface
Sharp
LM019LC1Sxx
Sony
ACX506AKM
Analog Devices
ADV7174/7179
Crystal (Cirrus Logic)
CS49xx series
Focus
FS453/4
1
Freescale Semiconductor does not recommend one supplier over another and in no way suggests that these are the only
display component suppliers.
2 These display components not validated at time of publication.
4.3.15.2
4.3.15.2.1
Synchronous Interfaces
Interface to Active Matrix TFT LCD Panels, Functional Description
Figure 46 depicts the LCD interface timing for a generic active matrix color TFT panel. In this figure
signals are shown with negative polarity. The sequence of events for active matrix interface timing is:
• DISPB_D3_CLK latches data into the panel on its negative edge (when positive polarity is
selected). In active mode, DISPB_D3_CLK runs continuously.
• DISPB_D3_HSYNC causes the panel to start a new line.
• DISPB_D3_VSYNC causes the panel to start a new frame. It always encompasses at least one
HSYNC pulse.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
60
Freescale Semiconductor
Electrical Characteristics
•
DISPB_D3_DRDY acts like an output enable signal to the CRT display. This output enables the
data to be shifted onto the display. When disabled, the data is invalid and the trace is off.
DISPB_D3_VSYNC
DISPB_D3_HSYNC
LINE 1
LINE 2
LINE 3
LINE 4
LINE n-1
LINE n
DISPB_D3_HSYNC
DISPB_D3_DRDY
1
2
3
m-1
m
DISPB_D3_CLK
DISPB_D3_DATA
Figure 46. Interface Timing Diagram for TFT (Active Matrix) Panels
4.3.15.2.2
Interface to Active Matrix TFT LCD Panels, Electrical Characteristics
Figure 47 depicts the horizontal timing (timing of one line), including both the horizontal sync pulse and
the data. All figure parameters shown are programmable. The timing images correspond to inverse polarity
of the DISPB_D3_CLK signal and active-low polarity of the DISPB_D3_HSYNC, DISPB_D3_VSYNC
and DISPB_D3_DRDY signals.
IP7
IP9
IP6
IP10
IP8
Start of line
IP5
DISPB_D3_CLK
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_DATA
Figure 47. TFT Panels Timing Diagram—Horizontal Sync Pulse
Figure 48 depicts the vertical timing (timing of one frame). All figure parameters shown are
programmable.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
61
Electrical Characteristics
End of frame
Start of frame
IP13
DISPB_D3_VSYNC
DISPB_D3_HSYNC
DISPB_D3_DRDY
IP11
IP15
IP14
IP12
Figure 48. TFT Panels Timing Diagram—Vertical Sync Pulse
Table 47 shows timing parameters of signals presented in Figure 47 and Figure 48.
Table 47. Synchronous Display Interface Timing Parameters—Pixel Level
ID
1
Parameter
Symbol
Value
Units
IP5
Display interface clock period
Tdicp
Tdicp1
ns
IP6
Display pixel clock period
Tdpcp
(DISP3_IF_CLK_CNT_D+1) * Tdicp
ns
IP7
Screen width
Tsw
(SCREEN_WIDTH+1) * Tdpcp
ns
IP8
HSYNC width
Thsw
(H_SYNC_WIDTH+1) * Tdpcp
ns
IP9
Horizontal blank interval 1
Thbi1
BGXP * Tdpcp
ns
IP10
Horizontal blank interval 2
Thbi2
(SCREEN_WIDTH – BGXP – FW) * Tdpcp
ns
IP11
HSYNC delay
Thsd
H_SYNC_DELAY * Tdpcp
ns
IP12
Screen height
Tsh
(SCREEN_HEIGHT+1) * Tsw
ns
IP13
VSYNC width
Tvsw
if V_SYNC_WIDTH_L = 0 than
(V_SYNC_WIDTH+1) * Tdpcp
else
(V_SYNC_WIDTH+1) * Tsw
ns
IP14
Vertical blank interval 1
Tvbi1
BGYP * Tsw
ns
IP15
Vertical blank interval 2
Tvbi2
(SCREEN_HEIGHT – BGYP – FH) * Tsw
ns
Display interface clock period immediate value.
⎧
DISP3_IF_CLK_PER_WR
⎪ T HSP_CLK ⋅ ------------------------------------------------------------------,
HSP_CLK_PERIOD
⎪
Tdicp = ⎨
DISP3_IF_CLK_PER_WR
⎪T
⋅ ⎛ floor ------------------------------------------------------------------ + 0.5 ± 0.5⎞⎠ ,
⎪ HSP_CLK ⎝
HSP_CLK_PERIOD
⎩
DISP3_IF_CLK_PER_WR
for integer -----------------------------------------------------------------HSP_CLK_PERIOD
DISP3_IF_CLK_PER_WR
for fractional -----------------------------------------------------------------HSP_CLK_PERIOD
Display interface clock period average value.
DISP3_IF_CLK_PER_WR
Tdicp = T HSP_CLK ⋅ -----------------------------------------------------------------HSP_CLK_PERIOD
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
62
Freescale Semiconductor
Electrical Characteristics
NOTE
HSP_CLK is the High-Speed Port Clock, which is the input to the Image
Processing Unit (IPU). Its frequency is controlled by the Clock Control
Module (CCM) settings. The HSP_CLK frequency must be greater than or
equal to the AHB clock frequency.
The SCREEN_WIDTH, SCREEN_HEIGHT, H_SYNC_WIDTH, V_SYNC_WIDTH, BGXP, BGYP and
V_SYNC_WIDTH_L parameters are programmed via the SDC_HOR_CONF, SDC_VER_CONF,
SDC_BG_POS Registers. The FW and FH parameters are programmed for the corresponding DMA
channel. The DISP3_IF_CLK_PER_WR, HSP_CLK_PERIOD and DISP3_IF_CLK_CNT_D parameters
are programmed via the DI_DISP3_TIME_CONF, DI_HSP_CLK_PER and DI_DISP_ACC_CC
Registers.
Figure 49 depicts the synchronous display interface timing for access level, and Table 48 lists the timing
parameters. The DISP3_IF_CLK_DOWN_WR and DISP3_IF_CLK_UP_WR parameters are set via the
DI_DISP3_TIME_CONF Register.
IP20
DISPB_D3_VSYNC
DISPB_D3_HSYNC
DISPB_D3_DRDY
other controls
DISPB_D3_CLK
IP16
IP17
IP19
IP18
DISPB_DATA
Figure 49. Synchronous Display Interface Timing Diagram—Access Level
Table 48. Synchronous Display Interface Timing Parameters—Access Level
ID
Parameter
Symbol
Typ1
Min
Max
Units
IP16 Display interface clock low time
Tckl
Tdicd–Tdicu–1.5
Tdicd2–Tdicu3
Tdicd–Tdicu+1.5
ns
IP17 Display interface clock high
time
Tckh
Tdicp–Tdicd+Tdicu–1.5
Tdicp–Tdicd+Tdicu
Tdicp–Tdicd+Tdicu+1.5
ns
IP18 Data setup time
Tdsu
Tdicd–3.5
Tdicu
—
ns
IP19 Data holdup time
Tdhd
Tdicp–Tdicd–3.5
Tdicp–Tdicu
—
ns
IP20 Control signals setup time to
display interface clock
Tcsu
Tdicd–3.5
Tdicu
—
ns
1
The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
63
Electrical Characteristics
2
Display interface clock down time
1
2 ⋅ DISP3_IF_CLK_DOWN_WR
Tdicd = --- T HSP_CLK ⋅ ceil --------------------------------------------------------------------------------2
HSP_CLK_PERIOD
3
Display interface clock up time
1
2 ⋅ DISP3_IF_CLK_UP_WR
Tdicu = --- T HSP_CLK ⋅ ceil ---------------------------------------------------------------------2
HSP_CLK_PERIOD
where CEIL(X) rounds the elements of X to the nearest integers towards infinity.
4.3.15.3
Interface to Sharp HR-TFT Panels
Figure 50 depicts the Sharp HR-TFT panel interface timing, and Table 49 lists the timing parameters. The
CLS_RISE_DELAY, CLS_FALL_DELAY, PS_FALL_DELAY, PS_RISE_DELAY,
REV_TOGGLE_DELAY parameters are defined in the SDC_SHARP_CONF_1 and
SDC_SHARP_CONF_2 registers. For other Sharp interface timing characteristics, refer to
Section 4.3.15.2.2, “Interface to Active Matrix TFT LCD Panels, Electrical Characteristics.” The timing
images correspond to straight polarity of the Sharp signals.
Horizontal timing
DISPB_D3_CLK
D1 D2
DISPB_D3_DATA
DISPB_D3_SPL
IP21
D320
1 DISPB_D3_CLK period
DISPB_D3_HSYNC
IP23
IP22
DISPB_D3_CLS
IP24
DISPB_D3_PS
IP25
IP26
DISPB_D3_REV
Example is drawn with FW+1=320 pixel/line, FH+1=240 lines.
SPL pulse width is fixed and aligned to the first data of the line.
REV toggles every HSYNC period.
Figure 50. Sharp HR-TFT Panel Interface Timing Diagram—Pixel Level
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
64
Freescale Semiconductor
Electrical Characteristics
Table 49. Sharp Synchronous Display Interface Timing Parameters—Pixel Level
ID
Parameter
Symbol
Value
Units
IP21
SPL rise time
Tsplr
(BGXP – 1) * Tdpcp
ns
IP22
CLS rise time
Tclsr
CLS_RISE_DELAY * Tdpcp
ns
IP23
CLS fall time
Tclsf
CLS_FALL_DELAY * Tdpcp
ns
IP24
CLS rise and PS fall time
Tpsf
PS_FALL_DELAY * Tdpcp
ns
IP25
PS rise time
Tpsr
PS_RISE_DELAY * Tdpcp
ns
IP26
REV toggle time
Trev
REV_TOGGLE_DELAY * Tdpcp
ns
4.3.15.4
Synchronous Interface to Dual-Port Smart Displays
Functionality and electrical characteristics of the synchronous interface to dual-port smart displays are
identical to parameters of the synchronous interface. See Section 4.3.15.2.2, “Interface to Active Matrix
TFT LCD Panels, Electrical Characteristics.”
4.3.15.4.1
Interface to a TV Encoder, Functional Description
The interface has an 8-bit data bus, transferring a single 8-bit value (Y/U/V) in each cycle. The bits
D7–D0 of the value are mapped to bits LD17–LD10 of the data bus, respectively. Figure 51 depicts the
interface timing,
• The frequency of the clock DISPB_D3_CLK is 27 MHz (within 10%).
• The DISPB_D3_HSYNC, DISPB_D3_VSYNC and DISPB_D3_DRDY signals are active low.
• The transition to the next row is marked by the negative edge of the DISPB_D3_HSYNC signal. It
remains low for a single clock cycle.
• The transition to the next field/frame is marked by the negative edge of the DISPB_D3_VSYNC
signal. It remains low for at least one clock cycle.
— At a transition to an odd field (of the next frame), the negative edges of DISPB_D3_VSYNC
and DISPB_D3_HSYNC coincide.
— At a transition to an even field (of the same frame), they do not coincide.
• The active intervals—during which data is transferred—are marked by the DISPB_D3_HSYNC
signal being high.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
65
Electrical Characteristics
DISPB_D3_CLK
DISPB_D3_HSYNC
DISPB_D3_VSYNC
DISPB_D3_DRDY
DISPB_DATA
Cb
Y
Cr
Y
Cb
Y
Cr
Pixel Data Timing
DISPB_D3_HSYNC
523
524
525
1
2
3
5
4
6
10
DISPB_D3_DRDY
DISPB_D3_VSYNC
Even Field
261
262
Odd Field
263
264
265
266
267
268
269
273
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_VSYNC
Even Field
Odd Field
Line and Field Timing - NTSC
DISPB_D3_HSYNC
621
622
623
624
625
1
3
2
4
23
DISPB_D3_DRDY
DISPB_D3_VSYNC
Even Field
308
Odd Field
309
310
311
312
313
314
315
316
336
DISPB_D3_HSYNC
DISPB_D3_DRDY
DISPB_D3_VSYNC
Even Field
Odd Field
Line and Field Timing - PAL
Figure 51. TV Encoder Interface Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
66
Freescale Semiconductor
Electrical Characteristics
4.3.15.4.2
Interface to a TV Encoder, Electrical Characteristics
The timing characteristics of the TV encoder interface are identical to the synchronous display
characteristics. See Section 4.3.15.2.2, “Interface to Active Matrix TFT LCD Panels, Electrical
Characteristics.”
4.3.15.5
4.3.15.5.1
Asynchronous Interfaces
Parallel Interfaces, Functional Description
The IPU supports the following asynchronous parallel interfaces:
• System 80 interface
— Type 1 (sampling with the chip select signal) with and without byte enable signals.
— Type 2 (sampling with the read and write signals) with and without byte enable signals.
• System 68k interface
— Type 1 (sampling with the chip select signal) with or without byte enable signals.
— Type 2 (sampling with the read and write signals) with or without byte enable signals.
For each of four system interfaces, there are three burst modes:
1. Burst mode without a separate clock. The burst length is defined by the corresponding parameters
of the IDMAC (when data is transferred from the system memory) of by the HBURST signal (when
the MCU directly accesses the display via the slave AHB bus). For system 80 and system 68k type
1 interfaces, data is sampled by the CS signal and other control signals changes only when transfer
direction is changed during the burst. For type 2 interfaces, data is sampled by the WR/RD signals
(system 80) or by the ENABLE signal (system 68k) and the CS signal stays active during the whole
burst.
2. Burst mode with the separate clock DISPB_BCLK. In this mode, data is sampled with the
DISPB_BCLK clock. The CS signal stays active during whole burst transfer. Other controls are
changed simultaneously with data when the bus state (read, write or wait) is altered. The CS
signals and other controls move to non-active state after burst has been completed.
3. Single access mode. In this mode, slave AHB and DMA burst are broken to single accesses. The
data is sampled with CS or other controls according the interface type as described above. All
controls (including CS) become non-active for one display interface clock after each access. This
mode corresponds to the ATI single access mode.
Both system 80 and system 68k interfaces are supported for all described modes as depicted in Figure 52,
Figure 53, Figure 54, and Figure 55. These timing images correspond to active-low DISPB_D#_CS,
DISPB_D#_WR and DISPB_D#_RD signals.
Additionally, the IPU allows a programmable pause between two burst. The pause is defined in the
HSP_CLK cycles. It allows to avoid timing violation between two sequential bursts or two accesses to
different displays. The range of this pause is from 4 to 19 HSP_CLK cycles.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
67
Electrical Characteristics
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by CS signal
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by separate burst clock (BCLK)
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Single access mode (all control signals are not active for one display interface clock after each display access)
Figure 52. Asynchronous Parallel System 80 Interface (Type 1) Burst Mode Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
68
Freescale Semiconductor
Electrical Characteristics
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by WR/RD signals
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Burst access mode with sampling by separate burst clock (BCLK)
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
DISPB_RD
DISPB_DATA
Single access mode (all control signals are not active for one display interface clock after each display access)
Figure 53. Asynchronous Parallel System 80 Interface (Type 2) Burst Mode Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
69
Electrical Characteristics
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Burst access mode with sampling by CS signal
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Burst access mode with sampling by separate burst clock (BCLK)
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Single access mode (all control signals are not active for one display interface clock after each display access)
Figure 54. Asynchronous Parallel System 68k Interface (Type 1) Burst Mode Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
70
Freescale Semiconductor
Electrical Characteristics
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Burst access mode with sampling by ENABLE signal
DISPB_BCLK
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Burst access mode with sampling by separate burst clock (BCLK)
DISPB_D#_CS
DISPB_PAR_RS
DISPB_WR
(READ/WRITE)
DISPB_RD
(ENABLE)
DISPB_DATA
Single access mode (all control signals are not active for one display interface clock after each display access)
Figure 55. Asynchronous Parallel System 68k Interface (Type 2) Burst Mode TIming Diagram
Display read operation can be performed with wait states when each read access takes up to four display
interface clock cycles according to the DISP0_RD_WAIT_ST parameter in the
DI_DISP0_TIME_CONF_3, DI_DISP1_TIME_CONF_3, DI_DISP2_TIME_CONF_3 Registers.
Figure 56 shows timing of the parallel interface with read wait states.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
71
Electrical Characteristics
WRITE OPERATION
READ OPERATION
DISP0_RD_WAIT_ST=00
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_DATA
DISP0_RD_WAIT_ST=01
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_DATA
DISP0_RD_WAIT_ST=10
DISPB_D#_CS
DISPB_RD
DISPB_WR
DISPB_PAR_RS
DISPB_DATA
Figure 56. Parallel Interface Timing Diagram—Read Wait States
4.3.15.5.2
Parallel Interfaces, Electrical Characteristics
Figure 57, Figure 59, Figure 58, and Figure 60 depict timing of asynchronous parallel interfaces based on
the system 80 and system 68k interfaces. Table 50 lists the timing parameters at display access level. All
timing images are based on active low control signals (signals polarity is controlled via the
DI_DISP_SIG_POL Register).
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
72
Freescale Semiconductor
Electrical Characteristics
IP28, IP27
DISPB_PAR_RS
DISPB_RD (READ_L)
DISPB_DATA[17]
(READ_H)
IP35, IP33
IP36, IP34
DISPB_D#_CS
DISPB_WR (WRITE_L)
DISPB_DATA[16]
(WRITE_H)
IP31, IP29
IP32, IP30
read point
IP38
IP37
DISPB_DATA
(Input)
Read Data
IP40
IP39
DISPB_DATA
(Output)
IP46,IP44
IP47
IP45, IP43
IP42, IP41
Figure 57. Asynchronous Parallel System 80 Interface (Type 1) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
73
Electrical Characteristics
IP28, IP27
DISPB_PAR_RS
DISPB_D#_CS
IP35, IP33
IP36, IP34
DISPB_RD (READ_L)
DISPB_DATA[17]
(READ_H)
DISPB_WR (WRITE_L)
DISPB_DATA[16]
(WRITE_H)
IP31, IP29
IP32, IP30
read point
IP37
DISPB_DATA
(Input)
IP38
Read Data
IP39
IP40
DISPB_DATA
(Output)
IP46,IP44
IP47
IP45, IP43
IP42, IP41
Figure 58. Asynchronous Parallel System 80 Interface (Type 2) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
74
Freescale Semiconductor
Electrical Characteristics
IP28, IP27
DISPB_PAR_RS
DISPB_RD (ENABLE_L)
DISPB_DATA[17]
(ENABLE_H)
IP35,IP33
IP36, IP34
DISPB_D#_CS
DISPB_WR
(READ/WRITE)
IP31, IP29
IP32, IP30
read point
IP37
DISPB_DATA
(Input)
IP38
Read Data
IP39
IP40
DISPB_DATA
(Output)
IP46,IP44
IP47
IP45, IP43
IP42, IP41
Figure 59. Asynchronous Parallel System 68k Interface (Type 1) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
75
Electrical Characteristics
IP28, IP27
DISPB_PAR_RS
DISPB_D#_CS
IP35,IP33
IP36, IP34
DISPB_RD (ENABLE_L)
DISPB_DATA[17]
(ENABLE_H)
DISPB_WR
(READ/WRITE)
IP32, IP30
IP31, IP29
read point
IP38
IP37
DISPB_DATA
(Input)
Read Data
IP39
IP40
DISPB_DATA
(Output)
IP46,IP44
IP47
IP45, IP43
IP42, IP41
Figure 60. Asynchronous Parallel System 68k Interface (Type 2) Timing Diagram
Table 50. Asynchronous Parallel Interface Timing Parameters—Access Level
ID
Parameter
IP27 Read system cycle time
IP28 Write system cycle time
Symbol
Tcycr
Tcycw
Typ.1
Min.
Tdicpr–1.5
Tdicpr2
3
Max.
Units
Tdicpr+1.5
ns
Tdicpw–1.5
Tdicpw
Tdicpw+1.5
ns
Tdicdr4–Tdicur5
Tdicdr–Tdicur+1.5
ns
Tdicpr–Tdicdr+Tdicur+1.5
ns
IP29 Read low pulse width
Trl
Tdicdr–Tdicur–1.5
IP30 Read high pulse width
Trh
Tdicpr–Tdicdr+Tdicur–1.5 Tdicpr–Tdicdr+
Tdicur
IP31 Write low pulse width
Twl
Tdicdw–Tdicuw–1.5
Tdicdw6–Tdicuw7
Tdicdw–Tdicuw+1.5
ns
IP32 Write high pulse width
Twh
Tdicpw–Tdicdw+
Tdicuw–1.5
Tdicpw–Tdicdw+
Tdicuw
Tdicpw–Tdicdw+
Tdicuw+1.5
ns
IP33 Controls setup time for read
Tdcsr
Tdicur–1.5
Tdicur
—
ns
IP34 Controls hold time for read
Tdchr
Tdicpr–Tdicdr–1.5
Tdicpr–Tdicdr
—
ns
IP35 Controls setup time for write
Tdcsw
Tdicuw–1.5
Tdicuw
—
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
76
Freescale Semiconductor
Electrical Characteristics
Table 50. Asynchronous Parallel Interface Timing Parameters—Access Level (continued)
ID
Parameter
Symbol
IP36 Controls hold time for write
IP37 Slave device data delay
Tdchw
8
Typ.1
Min.
Tdicpw–Tdicdw–1.5
Max.
Units
—
ns
Tdicpw–Tdicdw
9
10
Tracc
0
—
Tdrp –Tlbd –Tdicur–1.5
ns
Troh
Tdrp–Tlbd–Tdicdr+1.5
—
Tdicpr–Tdicdr–1.5
ns
IP39 Write data setup time
Tds
Tdicdw–1.5
Tdicdw
—
ns
IP40 Write data hold time
Tdh
Tdicpw–Tdicdw–1.5
Tdicpw–Tdicdw
—
ns
Tdicpr–1.5
Tdicpr
Tdicpr+1.5
ns
Tdicpw Tdicpw–1.5
Tdicpw
Tdicpw+1.5
ns
Tdicdr
Tdicdr–1.5
Tdicdr
Tdicdr+1.5
ns
Tdicur
Tdicur–1.5
Tdicur
Tdicur+1.5
ns
Tdicdw Tdicdw–1.5
Tdicdw
Tdicdw+1.5
ns
Tdicuw Tdicuw–1.5
Tdicuw
Tdicuw+1.5
ns
Tdrp
Tdrp+1.5
ns
IP38 Slave device data hold time
IP41 Read
8
period2
Tdicpr
3
IP42 Write period
IP43 Read down
time4
5
IP44 Read up time
IP45 Write down
IP46 Write up
time6
time7
IP47 Read time
point9
Tdrp
Tdrp–1.5
1The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
2 Display interface clock period value for read:
DISP#_IF_CLK_PER_RD
Tdicpr = T HSP_CLK ⋅ ceil ---------------------------------------------------------------HSP_CLK_PERIOD
3
Display interface clock period value for write:
DISP#_IF_CLK_PER_WR
Tdicpw = T HSP_CLK ⋅ ceil -----------------------------------------------------------------HSP_CLK_PERIOD
4
Display interface clock down time for read:
2 ⋅ DISP#_IF_CLK_DOWN_RD
1
Tdicdr = --- T HSP_CLK ⋅ ceil ------------------------------------------------------------------------------HSP_CLK_PERIOD
2
5
Display interface clock up time for read:
1
2 ⋅ DISP#_IF_CLK_UP_RD
Tdicur = --- T HSP_CLK ⋅ ceil -------------------------------------------------------------------2
HSP_CLK_PERIOD
6
Display interface clock down time for write:
1
2 ⋅ DISP#_IF_CLK_DOWN_WR
Tdicdw = --- T HSP_CLK ⋅ ceil --------------------------------------------------------------------------------2
HSP_CLK_PERIOD
7
Display interface clock up time for write:
1
2 ⋅ DISP#_IF_CLK_UP_WR
Tdicuw = --- T HSP_CLK ⋅ ceil ---------------------------------------------------------------------2
HSP_CLK_PERIOD
8
9
This parameter is a requirement to the display connected to the IPU
Data read point
DISP#_READ_EN
Tdrp = T HSP_CLK ⋅ ceil -------------------------------------------------HSP_CLK_PERIOD
10 Loopback
delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a
device-level output delay, board delays, a device-level input delay, an IPU input delay. This value is device specific.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
77
Electrical Characteristics
The DISP#_IF_CLK_PER_WR, DISP#_IF_CLK_PER_RD, HSP_CLK_PERIOD,
DISP#_IF_CLK_DOWN_WR, DISP#_IF_CLK_UP_WR, DISP#_IF_CLK_DOWN_RD,
DISP#_IF_CLK_UP_RD and DISP#_READ_EN parameters are programmed via the
DI_DISP#_TIME_CONF_1, DI_DISP#_TIME_CONF_2 and DI_HSP_CLK_PER Registers.
4.3.15.5.3
Serial Interfaces, Functional Description
The IPU supports the following types of asynchronous serial interfaces:
• 3-wire (with bidirectional data line)
• 4-wire (with separate data input and output lines)
• 5-wire type 1 (with sampling RS by the serial clock)
• 5-wire type 2 (with sampling RS by the chip select signal)
Figure 61 depicts timing of the 3-wire serial interface. The timing images correspond to active-low
DISPB_D#_CS signal and the straight polarity of the DISPB_SD_D_CLK signal.
For this interface, a bidirectional data line is used outside the device. The IPU still uses separate input and
output data lines (IPP_IND_DISPB_SD_D and IPP_DO_DISPB_SD_D). The I/O mux should provide
joining the internal data lines to the bidirectional external line according to the IPP_OBE_DISPB_SD_D
signal provided by the IPU.
Each data transfer can be preceded by an optional preamble with programmable length and contents. The
preamble is followed by read/write (RW) and address (RS) bits. The order of the these bits is
programmable. The RW bit can be disabled. The following data can consist of one word or of a whole
burst. The interface parameters are controlled by the DI_SER_DISP1_CONF and DI_SER_DISP2_CONF
Registers.
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
RW
Preamble
RS
D7
D6
D5
D4
D3
D2
D1
D0
Input or output data
Figure 61. 3-Wire Serial Interface Timing Diagram
Figure 62 depicts timing of the 4-wire serial interface. For this interface, there are separate input and output
data lines both inside and outside the device.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
78
Freescale Semiconductor
Electrical Characteristics
Write
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
RS
D7
D6
D5
Preamble
D4
D3
D2
D1
D0
Output data
DISPB_SD_D
(Input)
Read
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
RS
Preamble
DISPB_SD_D
(Input)
D7
D6
D5
D4
D3
D2
D1
D0
Input data
Figure 62. 4-Wire Serial Interface Timing Diagram
Figure 63 depicts timing of the 5-wire serial interface (Type 1). For this interface, a separate RS line is
added. When a burst is transmitted within single active chip select interval, the RS can be changed at
boundaries of words.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
79
Electrical Characteristics
Write
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
D7
D6
D5
Preamble
D4
D3
D2
D1
D0
Output data
DISPB_SD_D
(Input)
DISPB_SER_RS
Read
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
Preamble
DISPB_SD_D
(Input)
D7
D6
D5
D4
D3
D2
D1
D0
Input data
DISPB_SER_RS
Figure 63. 5-Wire Serial Interface (Type 1) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
80
Freescale Semiconductor
Electrical Characteristics
Figure 64 depicts timing of the 5-wire serial interface (Type 2). For this interface, a separate RS line is
added. When a burst is transmitted within single active chip select interval, the RS can be changed at
boundaries of words.
Write
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
D7
D6
D5
D4
D3
D2
D1
D0
Output data
Preamble
DISPB_SD_D
(Input)
DISPB_SER_RS
1 display IF
clock cycle
Read
DISPB_D#_CS
1 display IF
clock cycle
1 display IF
clock cycle
DISPB_SD_D_CLK
DISPB_SD_D
(Output)
RW
Preamble
DISPB_SD_D
(Input)
DISPB_SER_RS
D7
D6
D5
1 display IF
clock cycle
D4
D3
D2
D1
D0
Input data
Figure 64. 5-Wire Serial Interface (Type 2) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
81
Electrical Characteristics
Serial Interfaces, Electrical Characteristics
4.3.15.5.4
Figure 65 depicts timing of the serial interface. Table 51 lists the timing parameters at display access level.
IP49, IP48
DISPB_SER_RS
IP56,IP54
IP57, IP55
DISPB_SD_D_CLK
IP51, IP53
IP50, IP52
read point
IP59
IP58
DISPB_DATA
(Input)
Read Data
IP60
IP61
DISPB_DATA
(Output)
IP67,IP65
IP47
IP64, IP66
IP62, IP63
Figure 65. Asynchronous Serial Interface Timing Diagram
Table 51. Asynchronous Serial Interface Timing Parameters—Access Level
ID
Parameter
Symbol
Typ.1
Min.
Max.
Units
IP48 Read system cycle time
Tcycr
Tdicpr–1.5
Tdicpr2
Tdicpr+1.5
ns
IP49 Write system cycle time
Tcycw
Tdicpw–1.5
Tdicpw3
Tdicpw+1.5
ns
IP50 Read clock low pulse width
Trl
Tdicdr–Tdicur–1.5
Tdicdr4–Tdicur5
Tdicdr–Tdicur+1.5
ns
IP51 Read clock high pulse width
Trh
Tdicpr–Tdicdr+Tdicur–1.5
Tdicpr–Tdicdr+
Tdicur
Tdicpr–Tdicdr+Tdicur+1.5
ns
IP52 Write clock low pulse width
Twl
Tdicdw–Tdicuw–1.5
Tdicdw6–Tdicuw7
Tdicdw–Tdicuw+1.5
ns
IP53 Write clock high pulse width
Twh
Tdicpw–Tdicdw+
Tdicuw–1.5
Tdicpw–Tdicdw+
Tdicuw
Tdicpw–Tdicdw+
Tdicuw+1.5
ns
IP54 Controls setup time for read
Tdcsr
Tdicur–1.5
Tdicur
—
ns
IP55 Controls hold time for read
Tdchr
Tdicpr–Tdicdr–1.5
Tdicpr–Tdicdr
—
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
82
Freescale Semiconductor
Electrical Characteristics
Table 51. Asynchronous Serial Interface Timing Parameters—Access Level (continued)
ID
Parameter
Symbol
Typ.1
Min.
IP56 Controls setup time for write
Tdcsw
Tdicuw–1.5
Tdicuw
IP57 Controls hold time for write
Tdchw
Tdicpw–Tdicdw–1.5
Tdicpw–Tdicdw
IP58 Slave device data delay
8
Max.
Units
—
ns
—
ns
9
10
Tracc
0
—
Tdrp –Tlbd –Tdicur–1.5
ns
Troh
Tdrp–Tlbd–Tdicdr+1.5
—
Tdicpr–Tdicdr–1.5
ns
IP60 Write data setup time
Tds
Tdicdw–1.5
Tdicdw
—
ns
IP61 Write data hold time
Tdh
Tdicpw–Tdicdw–1.5
Tdicpw–Tdicdw
—
ns
Tdicpr–1.5
Tdicpr
Tdicpr+1.5
ns
Tdicpw Tdicpw–1.5
Tdicpw
Tdicpw+1.5
ns
Tdicdr
Tdicdr–1.5
Tdicdr
Tdicdr+1.5
ns
Tdicur
Tdicur–1.5
Tdicur
Tdicur+1.5
ns
Tdicdw Tdicdw–1.5
Tdicdw
Tdicdw+1.5
ns
Tdicuw Tdicuw–1.5
Tdicuw
Tdicuw+1.5
ns
Tdrp
Tdrp+1.5
ns
IP59 Slave device data hold time
IP62 Read
period2
IP63 Write
period3
IP64 Read down time
Tdicpr
4
time5
IP65 Read up
IP66 Write down
IP67 Write up
8
time6
time7
IP68 Read time
point9
Tdrp
Tdrp–1.5
1
The exact conditions have not been finalized, but will likely match the current customer requirement for their specific display. These
conditions may be device specific.
2 Display interface clock period value for read:
DISP#_IF_CLK_PER_RD
Tdicpr = T HSP_CLK ⋅ ceil ---------------------------------------------------------------HSP_CLK_PERIOD
3
Display interface clock period value for write:
DISP#_IF_CLK_PER_WR
Tdicpw = T HSP_CLK ⋅ ceil -----------------------------------------------------------------HSP_CLK_PERIOD
4
Display interface clock down time for read:
1
2 ⋅ DISP#_IF_CLK_DOWN_RD
Tdicdr = --- T HSP_CLK ⋅ ceil ------------------------------------------------------------------------------2
HSP_CLK_PERIOD
5
Display interface clock up time for read:
1
2 ⋅ DISP#_IF_CLK_UP_RD
Tdicur = --- T
⋅ ceil -------------------------------------------------------------------2 HSP_CLK
HSP_CLK_PERIOD
6
Display interface clock down time for write:
1
2 ⋅ DISP#_IF_CLK_DOWN_WR
Tdicdw = --- T
⋅ ceil --------------------------------------------------------------------------------2 HSP_CLK
HSP_CLK_PERIOD
7
Display interface clock up time for write:
1
2 ⋅ DISP#_IF_CLK_UP_WR
Tdicuw = --- T HSP_CLK ⋅ ceil ---------------------------------------------------------------------2
HSP_CLK_PERIOD
8
This parameter is a requirement to the display connected to the IPU.
Data read point:
9
Tdrp = T
10
HSP_CLK
DISP#_READ_EN
⋅ ceil -------------------------------------------------HSP_CLK_PERIOD
Loopback delay Tlbd is the cumulative propagation delay of read controls and read data. It includes an IPU output delay, a
device-level output delay, board delays, a device-level input delay, an IPU input delay. This value is device specific.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
83
Electrical Characteristics
The DISP#_IF_CLK_PER_WR, DISP#_IF_CLK_PER_RD, HSP_CLK_PERIOD,
DISP#_IF_CLK_DOWN_WR, DISP#_IF_CLK_UP_WR, DISP#_IF_CLK_DOWN_RD,
DISP#_IF_CLK_UP_RD and DISP#_READ_EN parameters are programmed via the
DI_DISP#_TIME_CONF_1, DI_DISP#_TIME_CONF_2 and DI_HSP_CLK_PER Registers.
4.3.16
Memory Stick Host Controller (MSHC)
Figure 66, Figure 67, and Figure 68 depict the MSHC timings, and Table 52 and Table 53 list the timing
parameters.
tSCLKc
tSCLKwh
tSCLKwl
MSHC_SCLK
tSCLKr
tSCLKf
Figure 66. MSHC_CLK Timing Diagram
tSCLKc
MSHC_SCLK
tBSsu
tBSh
MSHC_BS
tDsu
tDh
MSHC_DATA
(Output)
tDd
MSHC_DATA
(Intput)
Figure 67. Transfer Operation Timing Diagram (Serial)
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
84
Freescale Semiconductor
Electrical Characteristics
tSCLKc
MSHC_SCLK
tBSsu
tBSh
MSHC_BS
tDsu
tDh
MSHC_DATA
(Output)
tDd
MSHC_DATA
(Intput)
Figure 68. Transfer Operation Timing Diagram (Parallel)
NOTE
The Memory Stick Host Controller is designed to meet the timing
requirements per Sony's Memory Stick Pro Format Specifications document.
Tables in this section details the specifications requirements for parallel and
serial modes, and not the MCIMX31 timing.
Table 52. Serial Interface Timing Parameters1
Standards
Signal
MSHC_SCLK
Parameter
Symbol
Unit
Min.
Max.
Cycle
tSCLKc
50
—
ns
H pulse length
tSCLKwh
15
—
ns
L pulse length
tSCLKwl
15
—
ns
Rise time
tSCLKr
—
10
ns
Fall time
tSCLKf
—
10
ns
Setup time
tBSsu
5
—
ns
Hold time
tBSh
5
—
ns
Setup time
tDsu
5
—
ns
Hold time
tDh
5
—
ns
Output delay time
tDd
—
15
ns
MSHC_BS
MSHC_DATA
1
Timing is guaranteed for NVCC from 2.7 through 3.1 V and up to a maximum overdrive NVCC of 3.3 V. See
NVCC restrictions described in Table 8, "Operating Ranges," on page 13.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
85
Electrical Characteristics
Table 53. Parallel Interface Timing Parameters1
Standards
Signal
MSHC_SCLK
Parameter
Symbol
Unit
Min
Max
Cycle
tSCLKc
25
—
ns
H pulse length
tSCLKwh
5
—
ns
L pulse length
tSCLKwl
5
—
ns
Rise time
tSCLKr
—
10
ns
Fall time
tSCLKf
—
10
ns
Setup time
tBSsu
8
—
ns
Hold time
tBSh
1
—
ns
Setup time
tDsu
8
—
ns
Hold time
tDh
1
—
ns
Output delay time
tDd
—
15
ns
MSHC_BS
MSHC_DATA
1
Timing is guaranteed for NVCC from 2.7 through 3.1 V and up to a maximum overdrive NVCC of 3.3 V. See NVCC restrictions
described in Table 8, "Operating Ranges," on page 13.
4.3.17
Personal Computer Memory Card International Association
(PCMCIA)
Figure 69 and Figure 70 depict the timings pertaining to the PCMCIA module, each of which is an
example of one clock of strobe set-up time and one clock of strobe hold time. Table 54 lists the timing
parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
86
Freescale Semiconductor
Electrical Characteristics
HCLK
HADDR
CONTROL
HWDATA
ADDR 1
CONTROL 1
DATA write 1
HREADY
HRESP
OKAY
A[25:0]
ADDR 1
D[15:0]
OKAY
OKAY
DATA write 1
WAIT
REG
REG
OE/WE/IORD/IOWR
CE1/CE2
RW
POE
PSST
PSL
PSHT
Figure 69. Write Accesses Timing Diagram—PSHT=1, PSST=1
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
87
Electrical Characteristics
HCLK
ADDR 1
HADDR
CONTROL
CONTROL 1
DATA read 1
RWDATA
HREADY
HRESP
OKAY
A[25:0]
ADDR 1
OKAY
OKAY
D[15:0]
WAIT
REG
REG
OE/WE/IORD/IOWR
CE1/CE2
RW
POE
PSST
PSHT
PSL
Figure 70. Read Accesses Timing Diagram—PSHT=1, PSST=1
Table 54. PCMCIA Write and Read Timing Parameters
Symbol
Parameter
Min
Max
Unit
PSHT
PCMCIA strobe hold time
0
63
clock
PSST
PCMCIA strobe set up time
1
63
clock
PSL
PCMCIA strobe length
1
128
clock
4.3.18
PWM Electrical Specifications
This section describes the electrical information of the PWM. The PWM can be programmed to select one
of three clock signals as its source frequency. The selected clock signal is passed through a prescaler before
being input to the counter. The output is available at the pulse-width modulator output (PWMO) external
pin.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
88
Freescale Semiconductor
Electrical Characteristics
4.3.18.1
PWM Timing
Figure 71 depicts the timing of the PWM, and Table 55 lists the PWM timing characteristics.
1
2a
3b
System Clock
2b
4b
3a
4a
PWM Output
Figure 71. PWM Timing
Table 55. PWM Output Timing Parameters
ID
1
4.3.19
Parameter
Min
Max
Unit
0
ipg_clk
MHz
1
System CLK frequency1
2a
Clock high time
12.29
—
ns
2b
Clock low time
9.91
—
ns
3a
Clock fall time
—
0.5
ns
3b
Clock rise time
—
0.5
ns
4a
Output delay time
—
9.37
ns
4b
Output setup time
8.71
—
ns
CL of PWMO = 30 pF
SDHC Electrical Specifications
This section describes the electrical information of the SDHC.
4.3.19.1
SDHC Timing
Figure 72 depicts the timings of the SDHC, and Table 56 lists the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
89
Electrical Characteristics
SD4
SD1
SD3
SD2
CLK
SD5
SD6
CMD
DATA[3:0]
Output from SDHC to card
SD7
CMD
DATA[3:0]
Input to SDHC
SD8
Figure 72. SDHC Timing Diagram
Table 56. SDHC Interface Timing Parameters
ID
Parameter
Symbol
Min
Max
Unit
Clock Frequency (Low Speed)
fPP1
0
400
kHz
Clock Frequency (SD/SDIO Full Speed)
fPP2
0
25
MHz
Clock Frequency (MMC Full Speed)
fPP3
0
20
MHz
Clock Frequency (Identification Mode)
fOD4
100
400
kHz
SD2
Clock Low Time
tWL
10
—
ns
SD3
Clock High Time
tWH
10
—
ns
SD4
Clock Rise Time
tTLH
—
10
ns
SD5
Clock Fall Time
tTHL
—
10
ns
tODL
–6.5
3
ns
Card Input Clock
SD1
SDHC Output/Card Inputs CMD, DAT (Reference to CLK)
SD6
SDHC output delay
SDHC Input/Card Outputs CMD, DAT (Reference to CLK)
SD7
SDHC input setup
tIS
—
18.5
ns
SD8
SDHC input hold
tIH
—
–11.5
ns
1
In low speed mode, card clock must be lower than 400 kHz, voltage ranges from 2.7 V–3.3 V.
In normal data transfer mode for SD/SDIO card, clock frequency can be any value between 0 MHz–25 MHz.
3 In normal data transfer mode for MMC card, clock frequency can be any value between 0 MHz–20 MHz.
4 In card identification mode, card clock must be 100 kHz–400 kHz, voltage ranges from 2.7 V–3.3 V.
2
4.3.20
SIM Electrical Specifications
Each SIM card interface consist of a total of 12 pins (for 2 separate ports of 6 pins each. Mostly one port
with 5 pins is used).
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
90
Freescale Semiconductor
Electrical Characteristics
The interface is meant to be used with synchronous SIM cards. This means that the SIM module provides
a clock for the SIM card to use. The frequency of this clock is normally 372 times the data rate on the
TX/RX pins, however SIM module can work with CLK equal to 16 times the data rate on TX/RX pins.
There is no timing relationship between the clock and the data. The clock that the SIM module provides
to the aim card will be used by the SIM card to recover the clock from the data much like a standard UART.
All six (or 5 in case bi-directional TXRX is used) of the pins for each half of the SIM module are
asynchronous to each other.
There are no required timing relationships between the signals in normal mode, but there are some in two
specific cases: reset and power down sequences.
4.3.20.1
General Timing Requirements
Figure 73 shows the timing of the SIM module, and Figure 57 lists the timing parameters.
1/Sfreq
CLK
Sfall
Srise
Figure 73. SIM Clock Timing Diagram
Table 57. SIM Timing Specification—High Drive Strength
Num
Description
Symbol
Min
Max
Unit
1
SIM Clock Frequency (CLK)1
Sfreq
0.01
5 (Some new cards
may reach 10)
MHz
2
SIM CLK Rise Time 2
Srise
—
20
ns
3
SIM CLK Fall Time 3
Sfall
—
20
ns
4
SIM Input Transition Time (RX, SIMPD)
Strans
—
25
ns
1
50% duty cycle clock
With C = 50pF
3 With C = 50pF
2
4.3.20.2
4.3.20.2.1
Reset Sequence
Cards with Internal Reset
The sequence of reset for this kind of SIM Cards is as follows (see Figure 74):
• After powerup, the clock signal is enabled on SGCLK (time T0)
• After 200 clock cycles, RX must be high.
• The card must send a response on RX acknowledging the reset between 400 and 40000 clock cycles
after T0.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
91
Electrical Characteristics
SVEN
CLK
response
RX
1
2
T0
400 clock cycles <
1
< 200 clock cycles
2
< 40000 clock cycles
Figure 74. Internal-Reset Card Reset Sequence
4.3.20.2.2
Cards with Active Low Reset
The sequence of reset for this kind of card is as follows (see Figure 75):
1. After powerup, the clock signal is enabled on CLK (time T0)
2. After 200 clock cycles, RX must be high.
3. RST must remain Low for at least 40000 clock cycles after T0 (no response is to be received on
RX during those 40000 clock cycles)
4. RST is set High (time T1)
5. RST must remain High for at least 40000 clock cycles after T1 and a response must be received
on RX between 400 and 40000 clock cycles after T1.
SVEN
RST
CLK
response
RX
2
1
3
3
T0
T1
400 clock cycles <
400000 clock cycles <
1
< 200 clock cycles
2
< 40000 clock cycles
3
Figure 75. Active-Low-Reset Card Reset Sequence
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
92
Freescale Semiconductor
Electrical Characteristics
4.3.20.3
Power Down Sequence
Power down sequence for SIM interface is as follows:
1. SIMPD port detects the removal of the SIM Card
2. RST goes Low
3. CLK goes Low
4. TX goes Low
5. VEN goes Low
Each of this steps is done in one CKIL period (usually 32 kHz). Power down can be started because of a
SIM Card removal detection or launched by the processor. Figure 76 and Table 58 show the usual timing
requirements for this sequence, with Fckil = CKIL frequency value.
Spd2rst
SIMPD
RST
Srst2clk
CLK
Srst2dat
DATA_TX
Srst2ven
SVEN
Figure 76. SmartCard Interface Power Down AC Timing
Table 58. Timing Requirements for Power Down Sequence
Num
Description
Symbol
Min
Max
Unit
1
SIM reset to SIM clock stop
Srst2clk
0.9*1/FCKIL
0.8
µs
2
SIM reset to SIM TX data low
Srst2dat
1.8*1/FCKIL
1.2
µs
3
SIM reset to SIM Voltage Enable Low
Srst2ven
2.7*1/FCKIL
1.8
µs
4
SIM Presence Detect to SIM reset Low
Spd2rst
0.9*1/FCKIL
25
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
93
Electrical Characteristics
4.3.21
SJC Electrical Specifications
This section details the electrical characteristics for the SJC module. Figure 77 depicts the SJC test clock
input timing. Figure 78 depicts the SJC boundary scan timing, Figure 79 depicts the SJC test access port,
Figure 80 depicts the SJC TRST timing, and Table 59 lists the SJC timing parameters.
SJ1
SJ2
TCK
(Input)
SJ2
VM
VIH
VM
VIL
SJ3
SJ3
Figure 77. Test Clock Input Timing Diagram
TCK
(Input)
VIH
VIL
SJ4
Data
Inputs
SJ5
Input Data Valid
SJ6
Data
Outputs
Output Data Valid
SJ7
Data
Outputs
SJ6
Data
Outputs
Output Data Valid
Figure 78. Boundary Scan (JTAG) Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
94
Freescale Semiconductor
Electrical Characteristics
TCK
(Input)
VIH
VIL
SJ8
TDI
TMS
(Input)
SJ9
Input Data Valid
SJ10
TDO
(Output)
Output Data Valid
SJ11
TDO
(Output)
SJ10
TDO
(Output)
Output Data Valid
Figure 79. Test Access Port Timing Diagram
TCK
(Input)
SJ13
TRST
(Input)
SJ12
Figure 80. TRST Timing Diagram
Table 59. SJC Timing Parameters
All Frequencies
ID
Parameter
Unit
Min
Max
1001
—
ns
SJ1
TCK cycle time
SJ2
TCK clock pulse width measured at VM2
40
—
ns
SJ3
TCK rise and fall times
—
3
ns
SJ4
Boundary scan input data set-up time
10
—
ns
SJ5
Boundary scan input data hold time
50
—
ns
SJ6
TCK low to output data valid
—
50
ns
SJ7
TCK low to output high impedance
—
50
ns
SJ8
TMS, TDI data set-up time
10
—
ns
SJ9
TMS, TDI data hold time
50
—
ns
SJ10
TCK low to TDO data valid
—
44
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
95
Electrical Characteristics
Table 59. SJC Timing Parameters (continued)
All Frequencies
ID
Parameter
Unit
Min
Max
—
44
ns
SJ11
TCK low to TDO high impedance
SJ12
TRST assert time
100
—
ns
SJ13
TRST set-up time to TCK low
40
—
ns
1
On cases where SDMA TAP is put in the chain, the max TCK frequency is limited by max ratio of 1:8 of SDMA core frequency
to TCK limitation. This implies max frequency of 8.25 MHz (or 121.2 ns) for 66 MHz IPG clock.
2
VM - mid point voltage
4.3.22
SSI Electrical Specifications
This section describes the electrical information of SSI. Note the following pertaining to timing
information:
• All the timings for the SSI are given for a non-inverted serial clock polarity (TSCKP/RSCKP = 0)
and a non-inverted frame sync (TFSI/RFSI = 0). If the polarity of the clock and/or the frame sync
have been inverted, all the timing remains valid by inverting the clock signal STCK/SRCK and/or
the frame sync STFS/SRFS shown in the tables and in the figures.
• All timings are on AUDMUX signals when SSI is being used for data transfer.
• “Tx” and “Rx” refer to the Transmit and Receive sections of the SSI.
• For internal Frame Sync operation using external clock, the FS timing will be same as that of Tx
Data (for example, during AC97 mode of operation).
4.3.22.1
SSI Transmitter Timing with Internal Clock
Figure 81 depicts the SSI transmitter timing with internal clock, and Table 60 lists the timing parameters.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
96
Freescale Semiconductor
Electrical Characteristics
SS1
SS3
SS5
SS2
SS4
AD1_TXC
(Output)
SS8
SS6
AD1_TXFS (bl)
(Output)
SS10
SS12
AD1_TXFS (wl)
(Output)
SS14
SS15
SS16
SS18
SS17
AD1_TXD
(Output)
SS43
SS42
SS19
AD1_RXD
(Input)
Note: SRXD Input in Synchronous mode only
SS1
SS3
SS5
SS2
SS4
DAM1_T_CLK
(Output)
SS6
SS8
DAM1_T_FS (bl)
(Output)
SS10
SS12
DAM1_T_FS (wl)
(Output)
SS14
SS15
SS16
SS18
SS17
DAM1_TXD
(Output)
SS43
SS42
SS19
DAM1_RXD
(Input)
Note: SRXD Input in Synchronous mode only
Figure 81. SSI Transmitter with Internal Clock Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
97
Electrical Characteristics
Table 60. SSI Transmitter with Internal Clock Timing Parameters
ID
Parameter
Min
Max
Unit
Internal Clock Operation
SS1
(Tx/Rx) CK clock period
81.4
—
ns
SS2
(Tx/Rx) CK clock high period
36.0
—
ns
SS3
(Tx/Rx) CK clock rise time
—
6
ns
SS4
(Tx/Rx) CK clock low period
36.0
—
ns
SS5
(Tx/Rx) CK clock fall time
—
6
ns
SS6
(Tx) CK high to FS (bl) high
—
15.0
ns
SS8
(Tx) CK high to FS (bl) low
—
15.0
ns
SS10
(Tx) CK high to FS (wl) high
—
15.0
ns
SS12
(Tx) CK high to FS (wl) low
—
15.0
ns
SS14
(Tx/Rx) Internal FS rise time
—
6
ns
SS15
(Tx/Rx) Internal FS fall time
—
6
ns
SS16
(Tx) CK high to STXD valid from high impedance
—
15.0
ns
SS17
(Tx) CK high to STXD high/low
—
15.0
ns
SS18
(Tx) CK high to STXD high impedance
—
15.0
ns
SS19
STXD rise/fall time
—
6
ns
10.0
—
ns
Synchronous Internal Clock Operation
SS42
SRXD setup before (Tx) CK falling
SS43
SRXD hold after (Tx) CK falling
0
—
ns
SS52
Loading
—
25
pF
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
98
Freescale Semiconductor
Electrical Characteristics
4.3.22.2
SSI Receiver Timing with Internal Clock
Figure 82 depicts the SSI receiver timing with internal clock, and Table 61 lists the timing parameters.
SS1
SS3
SS5
SS2
SS4
AD1_TXC
(Output)
SS9
SS7
AD1_TXFS (bl)
(Output)
SS11
SS13
AD1_TXFS (wl)
(Output)
SS20
SS21
AD1_RXD
(Input)
SS51
SS47
SS48
SS49
SS50
AD1_RXC
(Output)
SS1
SS3
SS5
SS2
SS4
DAM1_T_CLK
(Output)
SS7
DAM1_T_FS (bl)
(Output)
SS9
SS11
SS13
DAM1_T_FS (wl)
(Output)
SS20
SS21
DAM1_RXD
(Input)
SS47
SS48
SS51
SS50
SS49
DAM1_R_CLK
(Output)
Figure 82. SSI Receiver with Internal Clock Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
99
Electrical Characteristics
Table 61. SSI Receiver with Internal Clock Timing Parameters
ID
Parameter
Min
Max
Unit
Internal Clock Operation
SS1
(Tx/Rx) CK clock period
81.4
—
ns
SS2
(Tx/Rx) CK clock high period
36.0
—
ns
SS3
(Tx/Rx) CK clock rise time
—
6
ns
SS4
(Tx/Rx) CK clock low period
36.0
—
ns
SS5
(Tx/Rx) CK clock fall time
—
6
ns
SS7
(Rx) CK high to FS (bl) high
—
15.0
ns
SS9
(Rx) CK high to FS (bl) low
—
15.0
ns
SS11
(Rx) CK high to FS (wl) high
—
15.0
ns
SS13
(Rx) CK high to FS (wl) low
—
15.0
ns
SS20
SRXD setup time before (Rx) CK low
10.0
—
ns
SS21
SRXD hold time after (Rx) CK low
0
—
ns
15.04
—
ns
Oversampling Clock Operation
SS47
Oversampling clock period
SS48
Oversampling clock high period
6
—
ns
SS49
Oversampling clock rise time
—
3
ns
SS50
Oversampling clock low period
6
—
ns
SS51
Oversampling clock fall time
—
3
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
100
Freescale Semiconductor
Electrical Characteristics
4.3.22.3
SSI Transmitter Timing with External Clock
Figure 83 depicts the SSI transmitter timing with external clock, and Table 62 lists the timing parameters.
SS22
SS23
SS25
SS26
SS24
AD1_TXC
(Input)
SS27
SS29
AD1_TXFS (bl)
(Input)
SS33
SS31
AD1_TXFS (wl)
(Input)
SS39
SS37
SS38
AD1_TXD
(Output)
SS45
SS44
AD1_RXD
(Input)
SS46
Note: SRXD Input in Synchronous mode only
SS22
SS26
SS23
SS24
SS25
DAM1_T_CLK
(Input)
SS27
SS29
DAM1_T_FS (bl)
(Input)
SS33
SS31
DAM1_T_FS (wl)
(Input)
SS39
SS37
SS38
DAM1_TXD
(Output)
SS44
SS45
DAM1_RXD
(Input)
Note: SRXD Input in Synchronous mode only
SS46
Figure 83. SSI Transmitter with External Clock Timing Diagram
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
101
Electrical Characteristics
Table 62. SSI Transmitter with External Clock Timing Parameters
ID
Parameter
Min
Max
Unit
External Clock Operation
SS22
(Tx/Rx) CK clock period
81.4
—
ns
SS23
(Tx/Rx) CK clock high period
36.0
—
ns
SS24
(Tx/Rx) CK clock rise time
—
6.0
ns
SS25
(Tx/Rx) CK clock low period
36.0
—
ns
SS26
(Tx/Rx) CK clock fall time
—
6.0
ns
SS27
(Tx) CK high to FS (bl) high
–10.0
15.0
ns
SS29
(Tx) CK high to FS (bl) low
10.0
—
ns
SS31
(Tx) CK high to FS (wl) high
–10.0
15.0
ns
SS33
(Tx) CK high to FS (wl) low
10.0
—
ns
SS37
(Tx) CK high to STXD valid from high impedance
—
15.0
ns
SS38
(Tx) CK high to STXD high/low
—
15.0
ns
SS39
(Tx) CK high to STXD high impedance
—
15.0
ns
Synchronous External Clock Operation
SS44
SRXD setup before (Tx) CK falling
10.0
—
ns
SS45
SRXD hold after (Tx) CK falling
2.0
—
ns
SS46
SRXD rise/fall time
—
6.0
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
102
Freescale Semiconductor
Electrical Characteristics
4.3.22.4
SSI Receiver Timing with External Clock
Figure 84 depicts the SSI receiver timing with external clock, and Table 63 lists the timing parameters.
SS22
SS26
SS24
SS25
SS23
AD1_TXC
(Input)
SS30
SS28
AD1_TXFS (bl)
(Input)
SS32
AD1_TXFS (wl)
(Input)
SS34
SS35
SS41
SS36
SS40
AD1_RXD
(Input)
SS22
SS24
SS26
SS23
SS25
DAM1_T_CLK
(Input)
SS30
SS28
DAM1_T_FS (bl)
(Input)
SS32
DAM1_T_FS (wl)
(Input)
SS34
SS35
SS41
SS36
SS40
DAM1_RXD
(Input)
Figure 84. SSI Receiver with External Clock Timing Diagram
Table 63. SSI Receiver with External Clock Timing Parameters
ID
Parameter
Min
Max
Unit
External Clock Operation
SS22
(Tx/Rx) CK clock period
81.4
—
ns
SS23
(Tx/Rx) CK clock high period
36.0
—
ns
SS24
(Tx/Rx) CK clock rise time
—
6.0
ns
SS25
(Tx/Rx) CK clock low period
36.0
—
ns
SS26
(Tx/Rx) CK clock fall time
—
6.0
ns
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
103
Electrical Characteristics
Table 63. SSI Receiver with External Clock Timing Parameters (continued)
ID
4.3.23
Parameter
Min
Max
Unit
SS28
(Rx) CK high to FS (bl) high
–10.0
15.0
ns
SS30
(Rx) CK high to FS (bl) low
10.0
—
ns
SS32
(Rx) CK high to FS (wl) high
–10.0
15.0
ns
SS34
(Rx) CK high to FS (wl) low
10.0
—
ns
SS35
(Tx/Rx) External FS rise time
—
6.0
ns
SS36
(Tx/Rx) External FS fall time
—
6.0
ns
SS40
SRXD setup time before (Rx) CK low
10.0
—
ns
SS41
SRXD hold time after (Rx) CK low
2.0
—
ns
USB Electrical Specifications
This section describes the electrical information of the USBOTG port. The OTG port supports both serial
and parallel interfaces.
The high speed (HS) interface is supported via the ULPI (Ultra Low Pin Count Interface). Figure 85
depicts the USB ULPI timing diagram, and Table 64 lists the timing parameters.
Clock
TSC
THC
Control out (stp)
TSD
THD
Data out
TDC
TDC
Control in (dir, nxt)
TDD
Data in
Figure 85. USB ULPI Interface Timing Diagram
Table 64. USB ULPI Interface Timing Specification1
Parameter
Symbol
Min
Max
Units
Setup time (control in, 8-bit data in)
TSC, TSD
6
—
ns
Hold time (control in, 8-bit data in)
THC, THD
0
—
ns
Output delay (control out, 8-bit data out)
TDC, TDD
—
9
ns
1
Timing parameters are given as viewed by transceiver side.
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
104
Freescale Semiconductor
Package Information and Pinout
5
Package Information and Pinout
This section includes the contact assignment information and mechanical package drawing for the
MCIMX31.
5.1
MAPBGA Production Package—457 14 x 14 mm, 0.5 mm Pitch
This section contains the outline drawing, signal assignment map (see Section 8, “Revision History,”
Table 70 for the 0.5 mm 14 × 14 MAPBGA signal assignments), and MAPBGA ground/power ID by ball
grid location for the 457 14 x 14 mm, 0.5 mm pitch package.
5.1.1
Production Package Outline Drawing–14 x 14 mm 0.5 mm
Figure 86. Production Package: Case 1581—0.5 mm Pitch
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
105
Package Information and Pinout
5.1.2
MAPBGA Signal Assignment–14 × 14 mm 0.5 mm
See Section 8, “Revision History,” Figure 70 for the 0.5 mm 14 × 14 MAPBGA signal assignments.
5.1.3
Connection Tables–14 x 14 mm 0.5 mm
Table 65 shows the device connection list for power and ground, alpha-sorted. Table 66 shows the device
connection list for signals.
5.1.3.1
Ground and Power ID Locations–14 x 14 mm 0.5 mm
Table 65. 14 x 14 MAPBGA Ground/Power ID by Ball Grid Location
GND/PWR ID
Ball Location
FGND
AB24
FUSE_VDD
AC24
FVCC
AA24
GND
A1, A2, A25, A26, B1, B2, B25, B26, C1, C2, C24, C25, C26, D1, D25, E22, E24, F21, L12, M11, M12, M13, M14,
M15, M16, N12, N13, N14, N15, N16, P12, P13, P14, P15, P16, R12, R13, R14, R15, R16, T12, T13, V17, AC2,
AC26, AD1, AD2, AD24, AD25, AD26, AE1, AE2, AE24, AE25, AE26, AF1, AF2, AF25, AF26
IOQVDD
Y6
MGND
T15
MVCC
V15
NVCC1
G19, G21, K18
NVCC2
Y17, Y18, Y19, Y20
NVCC3
L9, M9, N11
NVCC4
L18, L19
NVCC5
E5, F6, G7
NVCC6
J15, J16, K15
NVCC7
N18, P18, R18, T18
NVCC8
J12, J13
NVCC9
J17
NVCC10
P9, P11, R11, T11
NVCC21
Y14, Y15, Y16
NVCC22
W7, Y7, Y8, Y9, Y10, Y11, Y12, Y13, AA6
QVCC
J14, L13, L14, L15, L16, M18, U18, V10, V11, V12, V13
QVCC1
J10, J11, K9, L11
QVCC4
N9, R9, T9, U9
SGND
T14
SVCC
V14
UVCC
V16
UGND
T16
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
106
Freescale Semiconductor
Package Information and Pinout
5.1.3.2
BGA Signal ID by Ball Grid Location–14 x 14 0.5 mm
Table 66 shows the device connection list for signals only, alpha-sorted by signal identification.
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location
Signal ID
Ball Location
Signal ID
Ball Location
A0
A1
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A2
A20
A21
A22
A23
A24
A25
A3
A4
A5
A6
A7
A8
A9
ATA_CS0
ATA_CS1
ATA_DIOR
ATA_DIOW
ATA_DMACK
ATA_RESET
BATT_LINE
BCLK
BOOT_MODE0
BOOT_MODE1
BOOT_MODE2
BOOT_MODE3
BOOT_MODE4
CAPTURE
CAS
CE_CONTROL
CKIH
AD6
AF5
AF18
AC3
AD3
AD4
AF17
AF16
AF15
AF14
AF13
AF12
AB5
AF11
AF10
AF9
AF8
AF7
AF6
AE4
AA3
AF4
AB3
AE3
AD5
AF3
J6
F2
E2
H6
F1
H3
F7
AB26
F20
C21
D24
C22
D26
A22
AD20
A14
F24
CKIL
CLKO
CLKSS
COMPARE
CONTRAST
CS0
CS1
CS2
CS3
CS4
CS5
CSI_D10
CSI_D11
CSI_D12
CSI_D13
CSI_D14
CSI_D15
CSI_D4
CSI_D5
CSI_D6
CSI_D7
CSI_D8
CSI_D9
CSI_HSYNC
CSI_MCLK
CSI_PIXCLK
CSI_VSYNC
CSPI1_MISO
CSPI1_MOSI
CSPI1_SCLK
CSPI1_SPI_RDY
CSPI1_SS0
CSPI1_SS1
CSPI1_SS2
CSPI2_MISO
CSPI2_MOSI
CSPI2_SCLK
CSPI2_SPI_RDY
CSPI2_SS0
CSPI2_SS1
CSPI2_SS2
CSPI3_MISO
CSPI3_MOSI
H21
C23
G26
G18
R24
AE23
AF23
AE21
AD22
AF24
AF22
M24
L26
M21
M25
M20
M26
L21
K25
L24
K26
L20
L25
K20
K24
J26
J25
P7
P2
N2
N3
P3
P1
P6
A4
E3
C7
B6
B5
C6
A5
G3
D2
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
107
Package Information and Pinout
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
CSPI3_SCLK
CSPI3_SPI_RDY
CTS1
CTS2
D0
D1
D10
D11
D12
D13
D14
D15
D2
D3
D3_CLS
D3_REV
D3_SPL
D4
D5
D6
D7
D8
D9
DCD_DCE1
DCD_DTE1
DE
DQM0
DQM1
DQM2
DQM3
DRDY0
DSR_DCE1
DSR_DTE1
DTR_DCE1
DTR_DCE2
DTR_DTE1
DVFS0
DVFS1
EB0
EB1
ECB
FPSHIFT
GPIO1_0
GPIO1_1
GPIO1_2
LD7
E1
G6
B11
G13
AB2
Y3
Y1
U7
W2
V3
W1
U6
AB1
W6
R20
T26
U25
AA2
V7
AA1
W3
Y2
V6
B12
B13
C18
AE19
AD19
AA20
AE18
N26
A11
A12
C11
F12
C12
E25
G24
W21
Y24
AD23
N21
F18
B23
C20
W25
GPIO1_3
GPIO1_4
GPIO1_5 (PWR RDY)
GPIO1_6
GPIO3_0
GPIO3_1
HSYNC
I2C_CLK
I2C_DAT
IOIS16
KEY_COL0
KEY_COL1
KEY_COL2
KEY_COL3
KEY_COL4
KEY_COL5
KEY_COL6
KEY_COL7
KEY_ROW0
KEY_ROW1
KEY_ROW2
KEY_ROW3
KEY_ROW4
KEY_ROW5
KEY_ROW6
KEY_ROW7
L2PG
LBA
LCS0
LCS1
LD0
LD1
LD10
LD11
LD12
LD13
LD14
LD15
LD16
LD17
LD2
LD3
LD4
LD5
LD6
SCK6
F25
F19
B24
A23
K21
H26
N25
J24
H25
J3
C15
B17
G15
A17
C16
B18
F15
A18
F13
B15
C14
A15
G14
B16
F14
A16
See VPG1
AE22
P26
P21
T24
U26
V24
Y25
Y26
V21
AA25
W24
AA26
V20
T21
V25
T20
V26
U24
T2
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
108
Freescale Semiconductor
Package Information and Pinout
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
LD8
LD9
M_GRANT
M_REQUEST
MA10
MCUPG
NFALE
NFCE
NFCLE
NFRB
NFRE
NFWE
NFWP
OE
PAR_RS
PC_BVD1
PC_BVD2
PC_CD1
PC_CD2
PC_POE
PC_PWRON
PC_READY
PC_RST
PC_RW
PC_VS1
PC_VS2
PC_WAIT
POR
POWER_FAIL
PWMO
RAS
READ
RESET_IN
RI_DCE1
RI_DTE1
RTCK
RTS1
RTS2
RW
RXD1
RXD2
SCK3
SCK4
SCK5
SDCKE0
SDCKE1
U21
W26
Y21
AC25
AC1
See VPG0
V1
T6
U3
U1
V2
T7
U2
AB25
R21
H2
K6
L7
K1
J7
K3
J2
H1
G2
J1
K7
L6
H24
E26
G1
AF19
P20
J21
F11
G12
C17
G11
B14
AB22
A10
A13
R2
C4
D3
AD21
AF21
SCLK0
SD_D_CLK
SD_D_I
SD_D_IO
SD0
SD1
SD1_CLK
SD1_CMD
SD1_DATA0
SD1_DATA1
SD1_DATA2
SD1_DATA3
SD10
SD11
SD12
SD13
SD14
SD15
SD16
SD17
SD18
SD19
SD2
SD20
SD21
SD22
SD23
SD24
SD25
SD26
SD27
SD28
SD29
SD3
SD30
SD31
SD4
SD5
SD6
SD7
SD8
SD9
SDBA0
SDBA1
TRSTB
TTM_PAD
B22
P24
N20
P25
AD18
AE17
M7
L2
M6
L1
L3
K2
AE15
AE14
AD14
AA14
AE13
AD13
AA13
AD12
AA12
AE11
AA19
AE10
AA11
AE9
AA10
AE8
AD10
AE7
AA9
AA8
AD9
AA18
AE6
AA7
AD17
AA17
AE16
AA16
AD15
AA15
AD7
AE5
B20
U20
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
109
Package Information and Pinout
Table 66. 14 x 14 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
SDCLK
SDCLK
SDQS0
SDQS1
SDQS2
SDQS3
SDWE
SER_RS
SFS3
SFS4
SFS5
SFS6
SIMPD0
SJC_MOD
SRST0
SRX0
SRXD3
SRXD4
SRXD5
SRXD6
STX0
STXD3
STXD4
STXD5
STXD6
SVEN0
TCK
TDI
TDO
TMS
AA21
AE20
AD16
AE12
AD11
AD8
AF20
T25
R6
F3
A3
T3
G17
A20
C19
B21
R3
C3
B4
R7
F17
R1
B3
C5
T1
A21
B19
F16
A19
G16
TXD1
TXD2
USB_BYP
USB_OC
USB_PWR
USBH2_CLK
USBH2_DATA0
USBH2_DATA1
USBH2_DIR
USBH2_NXT
USBH2_STP
USBOTG_CLK
USBOTG_DATA0
USBOTG_DATA1
USBOTG_DATA2
USBOTG_DATA3
USBOTG_DATA4
USBOTG_DATA5
USBOTG_DATA6
USBOTG_DATA7
USBOTG_DIR
USBOTG_NXT
USBOTG_STP
VPG0
VPG1
VSTBY
VSYNC0
VSYNC3
WATCHDOG_RST
WRITE
F10
C13
A9
C10
B10
N1
M1
M3
N7
N6
M2
G10
F9
B8
G9
A7
C8
B7
F8
A6
B9
A8
C9
G25
J20
F26
N24
R26
A24
R25
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
110
Freescale Semiconductor
Package Information and Pinout
5.2
MAPBGA Production Package—473 19 x 19 mm, 0.8 mm Pitch
This section contains the outline drawing, signal assignment map (see Section 8, “Revision History,”
Table 71 for the 19 x 19 mm, 0.8 mm pitch signal assignments), and MAPBGA ground/power ID by ball
grid location for the 473 19 x 19 mm, 0.8 mm pitch package.
5.2.1
Production Package Outline Drawing–19 x 19 mm 0.8 mm
Figure 87. Production Package: Case 1931—0.8 mm Pitch
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
111
Package Information and Pinout
5.2.2
MAPBGA Signal Assignment–19 × 19 mm 0.8 mm
See Table 71 for the 19 × 19 mm, 0.8 mm pitch signal assignments/ball map.
5.2.3
Connection Tables–19 x 19 mm 0.8 mm
Table 67 shows the device connection list for power and ground, alpha-sorted followed by Table 68, which
shows the no-connects. Table 69 shows the device connection list for signals.
5.2.3.1
Ground and Power ID Locations—19 x 19 mm 0.8 mm
Table 67. 19 x 19 BGA Ground/Power ID by Ball Grid Location
GND/PWR ID
Ball Location
FGND
U16
FUSE_VDD
T15
FVCC
T16
GND
A1, A2, A3, A21, A22, A23, B1, B2, B22, B23, C1, C2, C22, C23, D22, D23, J12, J13, K10, K11, K12, K13, K14,
L10, L11, L12, L13, L14, M9, M10, M11, M12, M13, M14, N10, N11, N12, N13, N14, P10, P11, P12, P13, P14,
R12, Y1, Y23, AA1, AA2, AA22, AA23, AB1, AB2, AB21, AB22, AB23, AC1, AC2, AC21, AC22, AC23
IOQVDD
T8
MGND
U14
MVCC
U15
NVCC1
G15, G16, H16, J17
NVCC2
N16, P16, R15, R16, T14
NVCC3
K7, K8, L7, L8
NVCC4
H14, J15, K15
NVCC5
G9, G10, H8, H9
NVCC6
G11, G12, G13, H12
NVCC7
H15, J16, K16, L16, M16
NVCC8
H10, H11, J11
NVCC9
G14
NVCC10
P8, R7, R8, R9, T9
NVCC21
T11, T12, T13, U11
NVCC22
T10, U7, U8, U9, U10, V6, V7, V8, V9, V10
QVCC
H13, J14, L15, M15, N9, N15, P9, P15, R10, R11, R13, R14
QVCC1
J8, J9, J10, K9
QVCC4
L9, M7, M8, N8
SGND
U13
SVCC
U12
UVCC
P18
UGND
P17
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
112
Freescale Semiconductor
Package Information and Pinout
Table 68. 19 x 19 BGA No Connects1
1
5.2.3.2
Signal
Ball Location
NC
N7
NC
P7
NC
U21
These contacts are not used and must be floated by the user.
BGA Signal ID by Ball Grid Location—19 x 19 0.8 mm
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location
Signal ID
Ball Location
Signal ID
Ball Location
A0
A1
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A2
A20
A21
A22
A23
A24
A25
A3
A4
A5
A6
A7
A8
A9
ATA_CS0
ATA_CS1
ATA_DIOR
ATA_DIOW
ATA_DMACK
ATA_RESET
BATT_LINE
BCLK
BOOT_MODE0
BOOT_MODE1
Y6
AC5
V15
AB3
AA3
Y3
Y15
Y14
V14
Y13
V13
Y12
AB5
V12
Y11
V11
Y10
Y9
Y8
AA5
Y5
AC4
AB4
AA4
Y4
AC3
E1
G4
E3
H6
E2
F3
F6
W20
F17
C21
CKIL
CLKO
CLKSS
COMPARE
CONTRAST
CS0
CS1
CS2
CS3
CS4
CS5
CSI_D10
CSI_D11
CSI_D12
CSI_D13
CSI_D14
CSI_D15
CSI_D4
CSI_D5
CSI_D6
CSI_D7
CSI_D8
CSI_D9
CSI_HSYNC
CSI_MCLK
CSI_PIXCLK
CSI_VSYNC
CSPI1_MISO
CSPI1_MOSI
CSPI1_SCLK
CSPI1_SPI_RDY
CSPI1_SS0
CSPI1_SS1
CSPI1_SS2
CSPI2_MISO
CSPI2_MOSI
E21
C20
H17
A20
N21
U17
Y22
Y18
Y19
Y20
AA21
K21
K22
K23
L20
L18
L21
J20
J21
L17
J22
J23
K20
H22
H20
H23
H21
N2
N1
M4
M1
M2
N6
M3
B4
D5
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
113
Package Information and Pinout
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
BOOT_MODE2
BOOT_MODE3
BOOT_MODE4
CAPTURE
CAS
CE_CONTROL
CKIH
CSPI3_SCLK
CSPI3_SPI_RDY
CTS1
CTS2
D0
D1
D10
D11
D12
D13
D14
D15
D2
D3
D3_CLS
D3_REV
D3_SPL
D4
D5
D6
D7
D8
D9
DCD_DCE1
DCD_DTE1
DE
DQM0
DQM1
DQM2
DQM3
DRDY0
DSR_DCE1
DSR_DTE1
DTR_DCE1
DTR_DCE2
DTR_DTE1
DVFS0
DVFS1
EB0
D20
F18
E20
D18
AA20
D12
F23
H7
F4
A9
C12
U6
W4
V1
U4
U3
R6
U2
U1
W3
V4
P20
P21
N17
T7
W2
V3
W1
T6
V2
C10
D11
D16
AB19
Y16
AA18
AB18
M17
B10
A11
F10
C11
A10
E22
E23
W22
CSPI2_SCLK
CSPI2_SPI_RDY
CSPI2_SS0
CSPI2_SS1
CSPI2_SS2
CSPI3_MISO
CSPI3_MOSI
GPIO1_3
GPIO1_4
GPIO1_5 (PWR RDY)
GPIO1_6
GPIO3_0
GPIO3_1
HSYNC
I2C_CLK
I2C_DAT
IOIS16
KEY_COL0
KEY_COL1
KEY_COL2
KEY_COL3
KEY_COL4
KEY_COL5
KEY_COL6
KEY_COL7
KEY_ROW0
KEY_ROW1
KEY_ROW2
KEY_ROW3
KEY_ROW4
KEY_ROW5
KEY_ROW6
KEY_ROW7
L2PG
LBA
LCS0
LCS1
LD0
LD1
LD10
LD11
LD12
LD13
LD14
LD15
LD16
B5
D6
C5
A4
F7
D2
E4
G20
D21
D19
G18
G23
K17
L23
J18
K18
J7
A15
B15
D14
C15
F13
A16
B16
A17
A13
B13
C13
A14
F12
D13
B14
C14
See VPG1
V17
M22
N23
R23
R22
U22
R18
U20
V23
V22
V21
V20
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
114
Freescale Semiconductor
Package Information and Pinout
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
EB1
ECB
FPSHIFT
GPIO1_0
GPIO1_1
GPIO1_2
LD7
LD8
LD9
M_GRANT
M_REQUEST
MA10
MCUPG
NFALE
NFCE
NFCLE
NFRB
NFRE
NFWE
NFWP
OE
PAR_RS
PC_BVD1
PC_BVD2
PC_CD1
PC_CD2
PC_POE
PC_PWRON
PC_READY
PC_RST
PC_RW
PC_VS1
PC_VS2
PC_WAIT
POR
POWER_FAIL
PWMO
RAS
READ
RESET_IN
RI_DCE1
RI_DTE1
RTCK
RTS1
RTS2
RW
W21
Y21
M23
C19
G17
B20
T20
R17
U23
U18
T17
Y2
See VPG0
T2
R4
T1
R3
T4
T3
P6
T18
P22
G2
H4
J3
H1
J6
K6
H2
F1
G3
H3
G1
J4
F21
F20
F2
AA19
N18
F22
D10
B11
D15
B9
B12
V18
LD17
LD2
LD3
LD4
LD5
LD6
SCK6
SCLK0
SD_D_CLK
SD_D_I
SD_D_IO
SD0
SD1
SD1_CLK
SD1_CMD
SD1_DATA0
SD1_DATA1
SD1_DATA2
SD1_DATA3
SD10
SD11
SD12
SD13
SD14
SD15
SD16
SD17
SD18
SD19
SD2
SD20
SD21
SD22
SD23
SD24
SD25
SD26
SD27
SD28
SD29
SD3
SD30
SD31
SD4
SD5
SD6
W23
R21
R20
T23
T22
T21
R2
B19
M21
M20
M18
AC18
AA17
K2
K3
K4
J1
J2
L6
AB14
AC14
AA13
AB13
AC13
AA12
AC12
AA11
AB11
AC11
AB17
AA10
AB10
AC10
AC9
AA9
AC8
AB8
AC7
AA8
AB7
AC17
AA7
AC6
AA16
AC16
AA15
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
115
Package Information and Pinout
Table 69. 19 x 19 BGA Signal ID by Ball Grid Location (continued)
Signal ID
Ball Location
Signal ID
Ball Location
RXD1
RXD2
SCK3
SCK4
SCK5
SDCKE0
SDCKE1
SDCLK
SDCLK
SDQS0
SDQS1
SDQS2
SDQS3
SDWE
SER_RS
SFS3
SFS4
SFS5
SFS6
SIMPD0
SJC_MOD
SRST0
SRX0
SRXD3
SRXD4
SRXD5
SRXD6
STX0
STXD3
STXD4
STXD5
STXD6
SVEN0
TCK
TDI
TDO
TMS
C9
A12
P1
G6
D4
Y17
V16
AC20
AC19
AB16
AB12
AB9
AB6
AB20
P23
P2
D3
G7
P4
B18
C17
C18
A19
N3
C3
C4
R1
F16
N4
B3
D1
P3
D17
F14
A18
B17
C16
SD7
SD8
SD9
SDBA0
SDBA1
TRSTB
TXD1
TXD2
USB_BYP
USB_OC
USB_PWR
USBH2_CLK
USBH2_DATA0
USBH2_DATA1
USBH2_DIR
USBH2_NXT
USBH2_STP
USBOTG_CLK
USBOTG_DATA0
USBOTG_DATA1
USBOTG_DATA2
USBOTG_DATA3
USBOTG_DATA4
USBOTG_DATA5
USBOTG_DATA6
USBOTG_DATA7
USBOTG_DIR
USBOTG_NXT
USBOTG_STP
VPG0
VPG1
VSTBY
VSYNC0
VSYNC3
WATCHDOG_RST
WRITE
AB15
AC15
AA14
AA6
Y7
F15
D9
F11
C8
B8
A8
L1
M6
K1
L2
L4
L3
D8
G8
C7
A6
F8
D7
B6
A5
C6
A7
B7
F9
G21
G22
H18
L22
N20
B21
N22
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
116
Freescale Semiconductor
Freescale Semiconductor
5.3
Ball Maps
Table 70. Ball Map—14 x 14 0.5 mm Pitch
A
1
GND
2
GND
B
GND
GND
C
GND
GND
D
GND
E
F
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
CSPI3_
MOSI
CSPI3_ ATA_DI
SCLK OR
ATA_D ATA_C
MACK S1
3
SFS5
4
5
6
CSPI2 CSPI2_ USBOT
_MISO SS2
G_DAT
A7
STXD4 SRXD CSPI2_ CSPI2_
5
SS0
SPI_R
DY
SRXD4 SCK4 STXD5 CSPI2_
SS1
PC_RS
T
J PC_VS
1
K PC_CD
2
L SD1_D
ATA1
M USBH2
_DATA0
N USBH2
_CLK
PC_BV
D1
PC_RE
ADY
SD1_D
ATA3
SD1_C
MD
USBH2
_STP
CSPI1_
SCLK
8
9
USBOT USB_
G_NXT BYP
USBOT
G_DAT
A1
USBOT
G_DAT
A4
CSPI2_
MOSI
SFS4
13
14
15
16
17
18
19
CE_CO KEY_R KEY_R KEY_C KEY_C TDO
NTROL OW3
OW7
OL3
OL7
DCD_D DCD_D RTS2
CE1
TE1
KEY_R KEY_R KEY_C KEY_C TCK
OW1
OW5
OL1
OL5
KEY_R KEY_C KEY_C RTCK
OW2
OL0
OL4
DE
25
26
SJC_M SVEN0 CAPTU GPIO1_ WATCH GND
OD
RE
6
DOG_R
ST
TRSTB SRX0
SCLK0 GPIO1_ GPIO1_ GND
1
5
20
21
GND
A
GND
B
22
23
GND
C
SRST0 GPIO1 BOOT_ BOOT_ CLKO
_2
MODE1 MODE3
NVCC5
GND
NVCC5 BATT_L USBOT USBOT
INE
G_DAT G_DAT
A6
A0
CSPI3_ NVCC5
USBOT
SPI_R
G_DAT
DY
A2
ATA_DI
OW
ATA_C PC_PO
S0
E
PC_BV PC_VS
QVCC1
D2
2
PC_WA PC_CD
NVCC3
IT
1
SD1_D SD1_C
NVCC3
ATA0
LK
USBH2 USBH2
QVCC4
_NXT _DIR
ATA_R
ESET
IOIS16
STXD6 SCK6
SFS6
NFCE
NFWE
QVCC4
U
NFRB
NFCLE
D15
D11
QVCC4
V NFALE NFRE
W D14
D12
D13
D7
D9
D3
Y
D8
D1
AA D6
D4
A4
AB D2
AC MA10
D0
GND
A6
A11
AD GND
GND
A12
A13
A8
AE GND
AF GND
GND
GND
A7
A9
A3
A5
SDBA1 SD30
A1
A25
1
2
3
CSPI1_ CSPI1_
SS2
MISO
SFS3 SRXD6
NVCC1
0
QVCC4
D5
NVCC2
2
IOQVD NVCC2 NVCC2 NVCC2
D
2
2
2
NVCC2 SD31 SD28 SD27
2
TXD1
RI_DC DTR_D KEY_R KEY_R KEY_C TDI
E1
CE2
OW0
OW6
OL6
USBOT RTS1
G_CLK
RI_DT CTS2
E1
KEY_R KEY_C TMS
OW4
OL2
STX0
GPIO1 GPIO1 BOOT_ GND
_0
_4
MODE
0
SIMPD COMP NVCC1
NVCC1
0
ARE
NVCC6
QVCC QVCC QVCC QVCC
NVCC4 NVCC4 CSI_D8 CSI_D4
GND
GND
GND
GND
GND
GND
QVCC
NVCC3 GND
GND
GND
GND
GND
NVCC7
NVCC1 GND
0
NVCC1 GND
0
NVCC1 GND
0
GND
GND
GND
GND
NVCC7
READ
GND
GND
GND
GND
NVCC7
GND
SGND MGND UGND
D3_CL PAR_RS
S
LD4
LD2
NVCC7
QVCC
QVCC QVCC QVCC QVCC SVCC
MVCC UVCC
GND
4
LCS1
5
6
SD25
SDQS2 SD17
SD26
A24
SD20
A21
SD19
A20
10
11
7
SD24
A23
8
SD22
A22
9
SD15
SD12
SD8
SDQS0 SD4
SDQS1 SD14
A19
A18
SD11
A17
SD10
A16
SD6
A15
14
15
12
13
16
SD1
A14
17
SD0
CLKSS
G
GPIO3_
1
CSI_PIX
CLK
CSI_D7
H
SDCKE CS3
0
DQM3 DQM0 SDCLK CS2
LBA
A10
RAS
SDWE SDCKE CS5
1
18
19
20
21
22
J
K
L
M
N
LD6
U
LD10
LD15
LD3
LD7
LD5
LD9
V
W
EB1
LD11
LD12
Y
FVCC
LD14
LD16
AA
OE
BCLK
M_REQ GND
UEST
GND
GND
AB
AC
ECB
FGND
FUSE_V
DD
GND
CS0
CS1
GND
CS4
GND
GND
GND
GND
AE
AF
24
25
26
TTM_P LD8
AD
LD17 LD13
EB0
DQM1 CAS
VPG0
E
SD_D_I LCS0
O
WRITE VSYNC
3
SER_R D3_REV
S
D3_SPL LD1
NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 NVCC2 M_GRA
2
2
2
2
1
1
1
NT
SD23 SD21 SD18 SD16 SD13 SD9
SD7
SD5
SD3
SD2
DQM2 SDCLK
SDBA0 SDQS3 SD29
F
SD_D_
CLK
CONTR
AST
LD0
RW
A0
D
CKIH
BOOT_
MODE4
POWER
_FAIL
GPIO1_ VSTBY
3
CSI_D6 CSI_D9 CSI_D1
1
CSI_D1 CSI_D1 CSI_D1
0
3
5
VSYNC HSYNC DRDY0
0
CSI_D1 CSI_D1
4
2
SD_D_I FPSHIF
T
A2
BOOT_ GND
MODE2
GND
DVFS0
I2C_DA
T
I2C_CL CSI_VS
K
YNC
CSI_MC CSI_D5
LK
RESET_
IN
CSI_H GPIO3_
SYNC 0
QVCC1 GND
GND
POR
VPG1
NVCC1
GND
DVFS1
CKIL
QVCC1 QVCC1 NVCC8 NVCC8 QVCC NVCC6 NVCC6 NVCC9
24
23
P
R
T
AD
Package Information and Pinout
117
T
D10
12
USBOT USB_O DTR_D DTR_D TXD2
G_STP C
CE1
TE1
R
NFWP
11
DSR_D DSR_D RXD2
CE1
TE1
USBOT USB_P CTS1
G_DIR WR
PC_PW
RON
SD1_D
ATA2
USBH2
_DATA1
CSPI1_
SPI_RD
Y
CSPI1_ CSPI1_ CSPI1_
SS1
MOSI SS0
STXD3 SCK3 SRXD3
P
10
RXD1
SCK5
G PWMO PC_RW CSPI3_
MISO
H
7
USBOT
G_DAT
A3
USBOT
G_DAT
A5
CSPI2_
SCLK
A
GND
2
GND
3
GND
4
B
GND
GND
C
GND
GND
SRXD4 SRXD5
CSPI3_
MISO
SFS4
SCK5
E
ATA_
CS0
ATA_
DMACK
ATA_
DIOR
CSPI3_
MOSI
F
PC_
RST
PWMO
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
G PC_VS2
PC_
BVD1
PC_
H PC_CD2
READY
6
7
CSPI2_ USBOTG_ USBOTG USBOTG
SS1
DATA6
_DATA2
_DIR
CSPI2_
STXD4
MISO
D STXD5
5
8
9
10
11
DSR_
DTE1
12
13
14
15
16
17
18
KEY_
ROW3
KEY_
COL0
KEY_
COL5
KEY_
COL7
TDI
22
23
GND
GND
GND
A
GND
GND
B
BOOT_
MODE1
GND
GND
C
GND
D
CTS1
RXD2
USB_
OC
RTS1
DSR_
DCE1
RI_
DTE1
RTS2
KEY_
ROW1
KEY_
ROW6
KEY_
COL1
KEY_
COL6
TDO
WATCH
SIMPD0 SCLK0 GPIO1_2
DOG_RST
CSPI2_ USBOTG_ USBOTG_
SS0
DATA7
DATA1
USB_
BYP
RXD1
DCD_
DCE1
DTR_
DCE2
CTS2
KEY_
ROW2
KEY_
ROW7
KEY_
COL3
TMS
SJC_
MOD
SRST0
CSPI2_ CSPI2_SPI USBOTG_ USBOTG_
TXD1
MOSI
_RDY
DATA4
CLK
RI_
DCE1
DCD_
CE_
KEY_
DTE1 CONTROL ROW5
KEY_
COL2
RTCK
DE
SVEN0
CAPTURE
BATT_
LINE
CSPI2_
SS2
USBOTG_ USBOT DTR_
DATA3 G_STP DCE1
TXD2
KEY_
ROW4
KEY_
COL4
PC_
RW
ATA_
CS1
SCK4
SFS5
PC_
VS1
PC_
BVD2
ATA_
DIOW
CSPI3_
SCLK
NVCC5
NVCC5 NVCC8 NVCC8
NVCC6
QVCC
USBOTG_
NVCC5 NVCC5 NVCC6
DATA0
NVCC6
TCK
GND
CKIL
DVFS0
POWER_
FAIL
POR
RESET_
IN
GPIO1_3
VPG0
DVFS1 E
CKIH
F
VPG1 GPIO3_0 G
NVCC1
I2C_
CLK
CSI_D4
CSI_D5
NVCC4 NVCC7 GPIO3_1
I2C_
DAT
CSI_D9
CSI_
D10
CSI_D13 CSI_D15 VSYNC0 HSYNC L
QVCC1
QVCC1 QVCC1 NVCC8
GND
GND
QVCC
K
USBH2_
DATA1
SD1_
CLK
SD1_
CMD
SD1_
DATA0
PC_
PWRON
NVCC3
NVCC3
QVCC1
GND
GND
GND
STXD3
BOOT_
MODE3
GPIO1_4
BOOT_
MODE4
VSTBY
IOIS16
CSPI1_S CSPI1_ CSPI1_ CSPI1_
PI_RDY
SS0
SS2
SCLK
GPIO1 BOOT_
_5
MODE2
CLKSS
PC_POE
USBH2_ USBH2_ USBH2_ USBH2_
L
CLK
DIR
STP
NXT
BOOT_
MODE0
CLKO
NVCC4 NVCC7 NVCC1
PC_
WAIT
GND
STX0
GPIO1
_0
CSI_
MCLK
PC_
CD1
GND
TRSTB
SRX0 COMPARE
NVCC6 NVCC9 NVCC1 NVCC1 GPIO1_1 GPIO1_6
SD1_
DATA2
CSPI1_ CSPI1_
SRXD3
MOSI
MISO
21
CSPI2_ USBOTG_ USBOTG_
SCLK
DATA5
NXT
SD1_
DATA1
N
20
KEY_
ROW0
J
M
19
DTR_
DTE1
ATA_ CSPI3_
RESET SPI_RDY
USB_
PWR
NVCC4 NVCC7
CSI_
CSI_HSY CSI_PIX
H
VSYNC
NC
CLK
CSI_D7 CSI_D8 J
CSI_
D11
CSI_
D12
K
SD1_
DATA3
NVCC3
NVCC3
QVCC4
GND
GND
GND
GND
GND
QVCC
NVCC7
CSI_D6
CSI_
D14
USBH2_
DATA0
QVCC4
QVCC4
GND
GND
GND
GND
GND
GND
QVCC
NVCC7
DRDY0
SD_D_
IO
SD_D_I
CSPI1_
SS1
NC1
QVCC4
QVCC
GND
GND
GND
GND
GND
QVCC
NVCC2
D3_
SPL
READ
VSYNC3 CONTRAST WRITE
LCS1
N
UGND
UVCC
D3_CLS
D3_
REV
PAR_
RS
SER_
RS
P
LD8
LD11
LD3
LD2
LD1
LD0
R
SD_D_
CLK
LCS0 FPSHIFT M
SFS3
STXD6
SFS6
NFWP
NC1
NVCC10
QVCC
R SRXD6
SCK6
NFRB
NFCE
D13
NVCC10
NVCC10
NVCC1
QVCC
0
T NFCLE
NFALE
NFWE
NFRE
D8
D4
IOQVDD
NVCC1
NVCC22 NVCC21 NVCC21 NVCC21 NVCC2
0
FUSE_
VDD
FVCC
M_
REQUEST
OE
LD7
LD6
LD5
LD4
T
P
SCK3
GND
GND
GND
GND
GND
QVCC
GND
QVCC
QVCC
QVCC
NVCC2
NVCC2 NVCC2
Freescale Semiconductor
U
D15
D14
D12
D11
D0
NVCC22
NVCC22
NVCC2
NVCC22 NVCC21
2
V
D10
D9
D6
D3
NVCC22
NVCC22
NVCC22
NVCC2
NVCC22
2
W
D7
D5
D2
D1
Y
GND
MA10
A13
A8
A4
A0
SDBA1
A25
A24
A23
A21
A19
A17
A15
A14
DQM1
SDCKE0
CS2
AA
GND
GND
A12
A7
A3
SDBA0
SD30
SD28
SD24
SD20
SD17
SD15
SD12
SD9
SD6
SD4
SD1
AB
GND
GND
A11
A6
A2
SDQS3
SD29
SD26
SDQS2
SD21
SD18
SDQS1
SD13
SD10
SD7
SDQS0
AC
GND
GND
A9
A5
A1
SD31
SD27
SD25
SD23
SD22
SD19
SD16
SD14
SD11
SD8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1
These contacts are not used and must be floated by the user.
A22
SVCC
SGND
MGND
MVCC
FGND
CS0
M_
GRANT
LD12
NC
LD10
LD9
U
A20
A18
A16
A10
SDCKE1
LBA
RW
LD16
LD15
LD14
LD13
V
BCLK
EB1
EB0
LD17
W
CS3
CS4
ECB
CS1
GND
Y
DQM2
RAS
CAS
CS5
GND
GND
AA
SD2
DQM3
DQM0
SDWE
GND
GND
GND
AB
SD5
SD3
SD0
SDCLK SDCLK
GND
GND
GND
AC
16
17
18
21
22
23
19
20
Package Information and Pinout
118
Table 71. Ball Map—19 x 19 0.8 mm Pitch
1
Product Differences
6
Product Differences
The locations that provide the differences between silicon Revision 2.0, 1.2, and previous versions are
given in Table 72. The differences between the MCIMX31/MCIMX31L and the
MCIMX31C/MCIMX31LC are outlined in Table 73.
Table 72. Silicon Differentiation by Location within the Data Sheet
Item
Location
Silicon 1.2 and Previous
Silicon 2.0
Ordering Information Section 1.2, “Ordering Information
Table 1
Table 1
Feature Differences
Table 1.2.1, "Feature Differences
Between Mask Sets," on page 3
N/A
Table 1.2.1
Operating Ranges
Table 4.1, "Chip-Level Conditions,"
on page 10
Table 8, "Operating Ranges," on Table 8, and Table 9, "Specific
page 13
Operating Ranges for Silicon
Revision 2.0," on page 14
Power-up
Sequences
Section 4.2.1, “Powering Up
Figure 2, "Power-Up Sequence
for Silicon Revisions 1.2 and
Previous," on page 20
Power-down
Sequences
Section 4.2.2, “Powering Down
Figure 3, "Option 1 Power-Up
Sequence (Silicon Revision
2.0)," on page 21
—
—
Table 73. Product Differentiation
Item
Location
MCIMX31/MCIMX31L
MCIMX31C/MCIMX31LC
Device ordering
information
Table 1, "Ordering Information," on
page 3
See Table 1.
See Table 1.
Thermal simulation
values
Table 6, "Thermal Resistance
Data—14 × 14 mm Package," on
page 11 and Table 7, "Thermal
Resistance Data—19 × 19 mm
Package," on page 11
See Table 6 and Table 7.
See Table 7.
Core overdrive
operating voltages
Table 8, "Operating Ranges," on
page 13
Capability to operate in overdrive Not capable of overdrive
voltages.
operating voltages.
Fuse_VDD
Table 8, "Operating Ranges," on
page 13 and Table 9, "Specific
Operating Ranges for Silicon
Revision 2.0," on page 14
Fusebox read Supply Voltage
1.65 min, 1.95 max.
Ambient operating
temperature range
Table 13, "Current Consumption for 0°C min, 70°C max
–40×C to 85×C, for Silicon Revision –40°C min, 85°C max
2.0," on page 17, and Table 14,
"Current Consumption for 0×C to
70×C, for Silicon Revision 2.0," on
page 18
In read mode, FUSE_VDD
should be floated.
–40°C min, 85°C max
Current consumption Table 13, "Current Consumption for Typical value changes for State
values
–40×C to 85×C, for Silicon Revision Retention, Doze, and Wait. See
2.0," on page 17
Table.
Typical value changes for State
Retention, Doze, and Wait. See
Table.
DPLL maximum
output freq range
MPLL and SPLL = 400 MHz
Table 31, "DPLL Specifications," on MPLL and SPLL = 532 MHz
page 37
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
119
Product Documentation
Table 73. Product Differentiation (continued)
Item
Location
MCIMX31/MCIMX31L
MCIMX31C/MCIMX31LC
GPIO maximum
Table 15, "GPIO DC Electrical
input current (100 kΩ Parameters," on page 22
PU)
VI = 0, IIN = 25 μA
VI = NVCC, IIN = 0.1 μA
N/A
N/A
Core operating
speed
Table 8, "Operating Ranges," on
page 13
532 MHz
400 MHz
Package
Table 70, "Ball Map—14 x 14 0.5
mm Pitch," on page 117 and
Table 71, "Ball Map—19 x 19 0.8
mm Pitch," on page 118
MAPBGA Packages
457 14 x 14 mm, 0.5 mm Pitch
473 19 x 19 mm, 0.8 mm Pitch
MAPBGA Package
473 19 x 19 mm, 0.8 mm Pitch
Pin Assignment
Table 66, "14 x 14 BGA Signal ID by MAPBGA Packages
Ball Grid Location," on page 107 and 457 14 x 14 mm, 0.5 mm Pitch
Table 69, "19 x 19 BGA Signal ID by 473 19 x 19 mm, 0.8 mm Pitch
Ball Grid Location," on page 113
MAPBGA Package
473 19 x 19 mm, 0.8 mm Pitch
7
Product Documentation
This Data Sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com.
MCIMX31 Product Brief (order number MCIMX31PB)
MCIMX31 Reference Manual (order number MCIMX31RM)
MCIMX31 Chip Errata (order number MCIMX31CE)
The Freescale manuals are available on the Freescale Semiconductors Web site at
http://www.freescale.com/imx. These documents may be downloaded directly from the Freescale Web
site, or printed versions may be ordered. ARM Ltd. documentation is available from http://www.arm.com.
8
Revision History
Table 74 summarizes revisions to this document since the release of Rev. 3.4.
Table 74. Revision History
Rev.
4
Location
Revision
Figure 87, Table 73
Updated.
4.1
Table 1, "Ordering Information," on page 3 Added note about JTAG compliance.
4.1
Section 1.2.1/3
Updated with new operating frequencies
4.1
Table 8, "Operating Ranges," on page 13
Added new operating frequencies
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
120
Freescale Semiconductor
Revision History
This page left intentionally blank
MCIMX31/MCIMX31L Technical Data, Rev. 4.1
Freescale Semiconductor
121
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Rev. 4.1
11/2008
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