Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23.5% IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P23190HR6 2300 - 2400 MHz, 40 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C CW 250 1.3 W W/°C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100°C, 160 W CW Case Temperature 83°C, 40 W CW RθJC 0.22 0.24 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6P23190HR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f = 2390 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14 16 dB Drain Efficiency ηD 22 23.5 — % Intermodulation Distortion IM3 — - 37.5 - 35 dBc ACPR — - 41 - 38 dBc IRL — - 13 — dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. MRF6P23190HR6 2 RF Device Data Freescale Semiconductor VSUPPLY + C7 B1 R1 VBIAS + + C12 C11 C10 C9 C5 B2 Z3 RF INPUT Z1 C17 C18 C19 C20 C21 C27 Z19 Z5 Z15 Z17 Z21 Z23 Z13 Z7 Z9 C3 Z11 C1 Z2 Z25 Z26 Z27 RF OUTPUT Z28 DUT Z4 Z6 Z8 Z10 Z12 C2 Z16 Z18 Z22 Z24 Z14 C4 B3 R2 VBIAS + + C16 C15 C14 C13 Z20 C6 B4 + C8 Z1, Z28 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 0.380″ 0.850″ 2.244″ 0.186″ 0.614″ 0.570″ 0.072″ 0.078″ 0.861″ 0.187″ x 0.081″ x 0.135″ x 0.081″ x 0.074″ x 0.081″ x 0.282″ x 0.500″ x 0.500″ x 0.050″ x 0.782″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z17, Z18 Z19, Z20 Z21, Z22 Z23 Z24 Z25 Z26 Z27 PCB C22 C23 C24 C25 C26 VSUPPLY C28 0.321″ x 0.782″ Microstrip 0.404″ x 0.074″ Microstrip 0.918″ x 0.081″ Microstrip 0.346″ x 0.081″ Microstrip 2.103″ x 0.081″ Microstrip 0.037″ x 0.135″ Microstrip 0.250″ x 0.300″ Microstrip 0.563″ x 0.135″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6P23190HR6 Test Circuit Schematic Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2, B3, B4 Ferrite Beads 2508051107Y0 Fair - Rite C1, C2, C3, C4 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C5, C6, C7, C8 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C9, C13 0.01 μF, 100 V Chip Capacitors C1825C103J1RAC Kemet C10, C14, C17, C22 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C11, C15 22 μF, 25 V Tantalum Capacitors T491D226K025AT Kemet C12, C16 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C18, C19, C20, C21, C23, C24, C25, C26 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C27, C28 330 μF, 63 V Electrolytic Capacitors NACZF331M63V Nippon R1, R2 240 Ω, 1/4 W Chip Resistors CRCW12062400FKEA Vishay MRF6P23190HR6 RF Device Data Freescale Semiconductor 3 R1 C12 C11 C10* C9* C20 C21 B1 B2 C17 C18 C19 C27 C7 C5 C3 C1 C2 MRF6P23190H Rev. 3 C6 B3 B4 CUT OUT AREA C4 C8 C22 R2 C16 C15 C14* C13* C23 C24 C25 C26 C28 *Stacked. Figure 2. MRF6P23190HR6 Test Circuit Component Layout MRF6P23190HR6 4 RF Device Data Freescale Semiconductor 24 ηD 14 23 13.8 22 Gps 13.6 13.4 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −36 −38 13.2 −40 IRL 13 ACPR 12.8 2270 2290 2310 2330 2350 −42 2370 2390 −44 2430 2410 −13 −15 −16 −18 −19 −21 IRL, INPUT RETURN LOSS (dB) 25 VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1900 mA 14.2 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD, DRAIN EFFICIENCY (%) 14.4 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg. 13.6 32 13.4 31 13.2 Gps 13 IM3 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −26 −28 12.8 12.6 −30 IRL ACPR 12.4 2270 −32 2290 2310 2330 2350 2370 2390 −34 2430 2410 −12 −13 −15 −16 −18 −19 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 34 ηD ηD, DRAIN EFFICIENCY (%) 35 VDD = 28 Vdc, Pout = 80 W (Avg.), IDQ = 1900 mA 13.8 2−Carrier W−CDMA, 10 MHz Carrier Spacing IM3 (dBc), ACPR (dBc) 14 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 80 Watts Avg. 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) 15 −10 IDQ = 2850 mA 2375 mA 14 13 12 1900 mA 1425 mA 950 mA 11 10 0.5 VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing 1 10 100 500 VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 2850 mA −30 −40 IDQ = 950 mA 1900 mA −50 2375 mA 1425 mA −60 −70 0.5 1 10 100 500 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P23190HR6 RF Device Data Freescale Semiconductor 5 0 65 VDD = 28 Vdc, Pout = 190 W (PEP) IDQ = 1900 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz −20 −30 3rd Order −40 5th Order −50 7th Order P3dB = 55.1 dBm (325.54 W) 61 59 P1dB = 54.5 dBm (283.85 W) 57 55 Actual 53 VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2350 MHz 51 −60 0.1 Ideal P6dB = 55.73 dBm (374.11 W) 63 Pout, OUTPUT POWER (dBm) −10 49 10 1 100 37 35 39 41 43 45 47 49 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 36 VDD = 28 Vdc, IDQ = 1900 mA f1 = 2345 MHz, f2 = 2355 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 30 24 −25 85_C 25_C −30_C −30 85_C ηD 25_C −30_C 18 −40 Gps TC = −30_C 12 85_C −35 25_C −45 IM3 (dBc), ACPR (dBc) TWO−TONE SPACING (MHz) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS IM3 −50 6 ACPR 0 −55 1 10 100 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 50 85_C 40 25_C 30 14 85_C 20 13 ηD 12 10 11 1 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power 0 400 14 Gps, POWER GAIN (dB) Gps TC = −30_C 15 IDQ = 1900 mA f = 2350 MHz −30_C ηD, DRAIN EFFICIENCY (%) 16 Gps, POWER GAIN (dB) 15 60 VDD = 28 Vdc IDQ = 1900 mA f = 2350 MHz 13 12 VDD = 24 V 11 28 V 32 V 10 0 50 100 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6P23190HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 40 W Avg., and ηD = 23.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 −20 −30 −40 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 −50 −60 −70 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6P23190HR6 RF Device Data Freescale Semiconductor 7 f = 2400 MHz Zsource Zo = 50 Ω f = 2300 MHz f = 2400 MHz Zload f = 2300 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg. f MHz Zsource Ω Zload Ω 2300 9.31 - j12.12 7.89 - j32.78 2310 9.27 - j11.93 7.61 - j32.19 2320 9.24 - j11.75 7.35 - j31.62 2330 9.21 - j11.57 7.10 - j31.06 2340 9.18 - j11.40 6.86 - j30.53 2350 9.16 - j11.23 6.64 - j30.01 2360 9.14 - j11.06 6.43 - j29.51 2370 9.13 - j10.90 6.23 - j29.02 2380 9.12 - j10.75 6.04 - j28.55 2390 9.11 - j10.59 5.86 - j28.09 2400 9.11 - j10.45 5.68 - j27.64 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 15. Series Equivalent Source and Load Impedance MRF6P23190HR6 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X A bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A D aaa M T A M B M ccc ccc T A M M B M T A M B M R M (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D - 05 ISSUE E NI - 1230 MRF6P23190HR6 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Mar. 2007 Description • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a 200°C+ hot wire operating condition, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 3 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 MRF6P23190HR6 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MRF6P23190HR6 Document Number: RF Device Data MRF6P23190H Rev. 3, 12/2008 Freescale Semiconductor 11