FREESCALE MRF8HP21130HR3

Freescale Semiconductor
Technical Data
Document Number: MRF8HP21130H
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
14.2
46.4
7.9
--35.4
2140 MHz
14.1
45.7
7.7
--35.3
2170 MHz
14.0
45.1
7.6
--34.8
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW (1)
Features
• Advanced High Performance In--Package Doherty
• Production Tested in a Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
MRF8HP21130HR3
MRF8HP21130HSR3
2110--2170 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8HP21130HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8HP21130HSR3
Peaking
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
Carrier
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW
118
0.28
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 81°C, 28 W CW, 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2170 MHz
Case Temperature 105°C, 110 W CW(3), 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc, 2170 MHz
RθJC
Value (1,2)
Unit
°C/W
0.60
0.50
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 102 μAdc)
VGS(th)
0.1
0.9
1.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.02 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 75 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDB = 360 mA, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.75 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
(4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc,
Pout = 28 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
13.0
14.0
16.0
dB
Drain Efficiency
ηD
42.0
45.1
—
%
PAR
6.7
7.6
—
dB
ACPR
—
--34.8
--30.0
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Typical Broadband Performance (6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA,
VGSA = 0.4 Vdc, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
14.2
46.4
7.9
--35.4
2140 MHz
14.1
45.7
7.7
--35.3
2170 MHz
14.0
45.1
7.6
--34.8
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21130HR3 MRF8HP21130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc,
2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
130 (2)
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
166 (2)
—
W
—
18
—
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 28 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.011
—
dB/°C
∆P1dB
—
0.012
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (2)
MHz
1. Measurement made with device in a Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
3
C1
C2
C11 C12
C3
C21
R1
C13
MRF8HP21130
Rev. 1
P
Z1
C5
R2
C6
R3
R4
CUT OUT AREA
C4
C14
C15
C
C16
C17
C7
C8
C9 C10
C18
C22
C19 C20
Figure 2. MRF8HP21130HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8HP21130HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C9, C10, C11, C12,
C19, C20
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C3, C4, C5, C8, C13, C15,
C16, C18
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C6
1.2 pF Chip Capacitor
ATC600F1R2BT250XT
ATC
C7
0.5 pF Chip Capacitor
ATC600F0R5BT250XT
ATC
C14
0.7 pF Chip Capacitor
ATC600F0R7BT250XT
ATC
C17
1 pF Chip Capacitor
ATC600F1R0BT250XT
ATC
C21, C22
220 μF, 50 V Electrolytic Capacitors
EMVY500ADA221MJA0G
United Chemi--Con
R2, R3
100 Ω, 1/4 W Chip Resistors
CRCW1206100RFKEA
Vishay
R1, R4
10 Ω, 1/4 W Chip Resistors
CRCW120610R0JNEA
Vishay
Z1
2000--2300 MHz Band 90°, 3 dB Hybrid Coupler
X3C21P1--03S
Anaren
PCB
0.020″, εr = 3.5
R04350
Rogers
MRF8HP21130HR3 MRF8HP21130HSR3
4
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
14.2
47
46
45
ηD
14
44
Gps
13.8
13.6
PARC
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
13.4
13.2
2100
2120
--33
--2.2
--35
--36
ACPR
2080
--2
--34
13
12.8
2060
--32
2140
2160
2180
--37
2220
2200
--2.4
--2.6
--2.8
PARC (dB)
48
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQB = 360 mA, VGSA = 0.4 Vdc
14.6 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
14.4
ACPR (dBc)
14.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
--10
VDD = 28 Vdc, Pout = 52 W (PEP), IDQB = 360 mA
VGSA = 0.4 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--L IM3--U
--30
IM5--L
--40
IM5--U
IM7--L
--50
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
14.5
0
14
13.5
13
12.5
12
VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
ηD
--1
--15
50
--20
40
Gps
--2
ACPR
--1 dB = 17 W
--2 dB = 26 W
--3
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
10
20
30
40
30
20
--3 dB = 34 W
--4
--5
60
PARC
50
--25
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
10
--40
0
--45
60
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
ηD
10
0
50
--10
40
ACPR
2110 MHz
2140 MHz
2170 MHz
12
60
30
20
2140 MHz 2170 MHz
2110 MHz
8
Gps
6
1
10
100
10
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQB = 360 mA, VGSA = 0.4 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
16 Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
14
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
--50
0
150
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
GAIN (dB)
12
9
6
VDD = 28 Vdc
Pin = 0 dBm
IDQB = 360 mA
VGSA = 0.4 Vdc
3
0
1800
1875
1950
2025
2100
2175
2250
2325
2400
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8HP21130HR3 MRF8HP21130HSR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.20 -- j10.7
3.40 -- j6.70
48.4
69
55.3
49.2
83
56.1
2140
7.80 -- j11.5
3.40 -- j6.80
48.4
69
55.5
49.2
83
55.3
2170
9.20 -- j12.2
3.00 -- j7.24
48.4
69
52.5
49.2
83
53.3
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQB = 360 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.20 -- j10.7
7.60 -- j6.30
46.8
48
63.5
48.0
63
64.1
2140
7.80 -- j11.5
7.71 -- j5.50
46.6
46
63.5
47.8
60
63.9
2170
9.20 -- j12.2
6.40 -- j5.60
47.0
50
62.3
47.8
60
62.5
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
3.10 -- j7.30
5.40 + j0.50
51.4
138
55.8
52.2
166
56.9
2140
3.77 -- j7.80
5.00 + j1.80
51.2
132
54.4
52.0
158
56.7
2170
4.30 -- j8.50
4.30 + j1.50
51.2
132
54.1
52.0
158
55.2
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, VGSA = 0.4 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
3.10 -- j7.30
4.80 -- j5.20
49.1
81
67.2
51.0
126
68.2
2140
3.77 -- j7.80
6.50 -- j4.80
49.0
79
66.6
49.9
98
67.5
2170
4.30 -- j8.50
6.90 -- j4.90
48.8
76
66.7
49.9
98
67.4
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21130HR3 MRF8HP21130HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
9
MRF8HP21130HR3 MRF8HP21130HSR3
10
RF Device Data
Freescale Semiconductor
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
11
MRF8HP21130HR3 MRF8HP21130HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8HP21130H and MRF8HP21130HS parts will be available for 2 years after release of
MRF8HP21130H and MRF8HP21130HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8HP21130H and MRF8HP21130HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2011
Description
• Initial Release of Data Sheet
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
13
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MRF8HP21130HR3 MRF8HP21130HSR3
Document Number: MRF8HP21130H
Rev. 0, 4/2011
14
RF Device Data
Freescale Semiconductor