FREESCALE AFT21S230S_232S

Freescale Semiconductor
Technical Data
Document Number: AFT21S230S_232S
Rev. 1, 11/2012
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 watt RF power LDMOS transistors are designed for cellular base
station applications covering the frequency range of 2110 to 2170 MHz.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1500 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
16.7
30.5
7.2
--35.7
--19
2140 MHz
17.0
31.0
7.1
--35.4
--20
2170 MHz
17.2
31.8
7.0
--34.8
--15
AFT21S230SR3
AFT21S232SR3
2110--2170 MHz, 50 W AVG., 28 V
Features





Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
NI--780S--6: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 18.
N.C. 1
6 VBW
RFin/VGS 2
5 RFout/VDS
4 VBW
N.C. 3
(Top View)
NI--780S--6
AFT21S230S
Figure 1. Pin Connections
RFin/VGS 2
1 RFout/VDS
(Top View)
NI--780S--2
AFT21S232S
Figure 2. Pin Connections
 Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT21S230SR3 AFT21S232SR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
CW
163
0.79
W
W/C
Symbol
Value (2,3)
Unit
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 50 W CW, 28 Vdc, IDQ = 1500 mA, 2110 MHz
Case Temperature 86C, 140 W CW(4), 28 Vdc, IDQ = 1500 mA, 2110 MHz
RJC
C/W
0.43
0.38
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 291 Adc)
VGS(th)
1.5
2.0
2.5
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.7
3.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.7 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., f = 2110 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
16.0
16.7
19.0
dB
Drain Efficiency
D
29.0
30.5
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
6.7
7.2
—
dB
ACPR
—
--35.7
--34.0
dBc
IRL
—
--19
--10
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Part internally matched both on input and output.
(continued)
AFT21S230SR3 AFT21S232SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1500 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 269 W CW Output Power
(3 dB Input Overdrive from 182 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
P1dB
—
182 (1)
—
W

—
--19.3
—

VBWres
—
—
MHz
AFT21S230S
AFT21S232S
95
60
Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.016
—
dB/C
P1dB
—
0.007
—
dB/C
Output Power Variation over Temperature
(--30C to +85C) (1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C1
C22
C5
C4
C8
C2
C13*
C18
R1
C19
C12*
C10*
CUT OUT AREA
C11*
C16*
R2
C17
C14*
C20
C21
C15*
C9
C6
C7
C23
C3
AFT21S232S/AFT21S230S
Rev. 0
*C10, C11, C12, C13, C14, C15 and C16 are mounted vertically.
Figure 3. AFT21S230SR3(232SR3) Test Circuit Component Layout
Table 5. AFT21S230SR3(232SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
470 F, 63 V Electrolytic Capacitor
B41694A5477Q7
EPCOS
C2, C3, C4, C5, C6, C7, C22, C23
10 F, 100 V Chip Capacitors
C5750X7S2A106M
TDK
C8, C9, C10, C11, C12, C13, C14, C15
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C16
0.6 pF Chip Capacitor
ATC100B0R6BT500XT
ATC
C17
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C18, C19, C20, C21
1 F, 50 V Chip Capacitors
CDR34BX104AKWS
AVX
R1, R2
8.2 , 1/4 W Chip Resistors
RC1206FR--108R2L
Yageo
PCB
0.020, r = 3.5
RO4350B
Rogers
AFT21S230SR3 AFT21S232SR3
4
RF Device Data
Freescale Semiconductor, Inc.
17.5
D
32
31
30
Gps
17
16.5
ACPR
PARC
--32
--4
--33
--8
16
--34
15.5
--35
15
--36
14.5
2060
IRL
2080
2100
2120
2140
2160
2180
--12
--16
--20
--37
2220
2200
--24
--2
--2.4
--2.8
--3.2
--3.6
PARC (dB)
33
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1500 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
18.5 Input Signal PAR = 9.9 dB @ 0.01%
18 Probability on CCDF
IRL, INPUT RETURN LOSS (dB)
34
19
D, DRAIN
EFFICIENCY (%)
19.5
ACPR (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
--4
f, FREQUENCY (MHz)
--10
IM3--U
--30
IM3--L
IM5--L
--40
IM7--L
IM5--U
IM7--U
1
100
10
200
--10
VDD = 28 Vdc, Pout = 172 W (PEP), IDQ = 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 2140 MHz
IM3--U
--30
IM3--L
IM5--L
--40
IM5--U
IM7--L
--50
--60
IM7--U
1
100
10
200
TWO--TONE SPACING (MHz)
TWO--TONE SPACING (MHz)
Figure 5a. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT21S230S
Figure 5b. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT21S232S
17.5
0
17
16.5
16
15.5
15
VDD = 28 Vdc, IDQ = 1500 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz
Channel Bandwidth
D
ACPR
--1
--2 dB = 38 W
--3 dB = 49 W
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
10
25
40
55
--25
20
PARC
--5
35
25
Gps
--3
--4
--20
30
--1 dB = 28 W
--2
40
70
--30
--35
ACPR (dBc)
1
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18
D DRAIN EFFICIENCY (%)
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 172 W (PEP), IDQ = 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 2140 MHz
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
--40
15
--45
10
--50
85
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
19
18
ACPR 30
17
2110 MHz
16
2140 MHz
20
2170 MHz
15
10
2140 MHz
2110 MHz
14
1
10
100
0
--10
0
200
--20
--30
--40
ACPR (dBc)
60
VDD = 28 Vdc, IDQ = 1500 mA, Single--Carrier
2110 MHz
W--CDMA, 3.84 MHz Channel Bandwidth
50
2140
MHz
Input Signal PAR = 9.9 dB @ 0.01%
D
Probability on CCDF
2170 MHz
40
Gps
2170 MHz
D, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
21
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1500 mA
20
Gain
10
GAIN (dB)
17
0
15
IRL
13
--10
11
--20
9
1800
1900
2000
2100
2200
2300
2400
2500
IRL (dB)
19
30
--30
2600
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
AFT21S230SR3 AFT21S232SR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
P1dB
P3dB
Max
Linear
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
2110
1.20 - j6.00
1.20 + j5.90
1.50 - j3.90
17.7
54.3
269
55.4
11
55.2
331
57.0
16
2140
1.70 - j6.40
1.50 + j6.30
1.60 - j4.00
17.7
54.3
269
55.1
10
55.2
331
56.0
15
2170
1.70 - j6.80
1.75 + j6.70
1.50 - j4.00
17.8
54.3
269
54.7
11
55.2
331
56.0
16
(1) Load impedance for optimum P1dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 9. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Max
Linear
Gain (dB)
(dBm)
2110
1.20 - j6.00
1.20 + j5.93
2.10 - j2.41
20.0
2140
1.70 - j6.40
1.40 + j6.30
1.80 - j2.60
2170
1.70 - j6.80
1.80 + j6.80
1.70 - j2.60
P3dB
(W)
D
(%)
AM/PM
()
(dBm)
(W)
D
(%)
AM/PM
()
52.7
186
64.9
16
54.3
269
66.2
20
19.8
52.8
191
64.2
16
53.4
219
65.4
24
20.0
52.8
191
64.2
17
54.2
263
65.5
22
(1) Load impedance for optimum P1dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
--1.5
--1.5
62
51.5
50
--2.5
50.5
51
52.5
E
53
--3
53.5
--3.5
60
--2
52
IMAGINARY ()
IMAGINARY ()
--2
64
--2.5
E
--3
--3.5
60
54
--4
--4
P
--4.5
0.5
1
1.5
2
2.5
--4.5
3
48 50 52
0.5
58
54
56
1.5
2
2.5
3
REAL ()
REAL ()
Figure 11. P1dB Load Pull Output Power Contours (dBm)
Figure 12. P1dB Load Pull Efficiency Contours (%)
--1.5
--1.5
19.5
--2
--2
--26
--24
--22
--20
--18
--16
--2.5
E
18.5
--3
17
16.5
16
--3.5
18
--4
--4.5
IMAGINARY ()
19
IMAGINARY ()
1
P
17.5
P
0.5
1
1.5
2
--2.5
--3
3
--12
--3.5
--10
--4
2.5
--14
E
--4.5
0.5
P
1
1.5
2
2.5
REAL ()
REAL ()
Figure 13. P1dB Load Pull Gain Contours (dB)
Figure 14. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
3
Power Gain
Drain Efficiency
Linearity
Output Power
AFT21S230SR3 AFT21S232SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
--1.5
--1.5
IMAGINARY ()
51.5
52
58
--2
53
--2.5
E
IMAGINARY ()
51
--2
52.5
53.5
--3
54
--3.5
55
--4
--4.5
1
1.5
2
2.5
3
--3.5
64
62
52
50
48
1
56
P
58
1.5
2
2.5
3
3.5
REAL ()
REAL ()
Figure 15. P3dB Load Pull Output Power Contours (dBm)
Figure 16. P3dB Load Pull Efficiency Contours (%)
--1.5
--1.5
17.5
--2
--2
17
--2.5
E
IMAGINARY ()
IMAGINARY ()
--3
--4.5
3.5
60
E
54
--4
54.5
P
--2.5
16.5
--3
16
--3.5
15
14.5
14
--4
15.5
--30
--28
--26
--24
--22
--20
--2.5
--3
1
1.5
--18
--3.5
--16
--4
P
--4.5
E
P
2
2.5
3
3.5
--4.5
1
1.5
--14
2
2.5
3
3.5
REAL ()
REAL ()
Figure 17. P3dB Load Pull Gain Contours (dB)
Figure 18. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Power Gain
Drain Efficiency
Linearity
Output Power
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT21S230SR3 AFT21S232SR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT21S230SR3 AFT21S232SR3
12
RF Device Data
Freescale Semiconductor, Inc.
AFT21S230SR3 AFT21S232SR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
NI--780S--6: R5 Suffix = 50 Units, 44 mm Tape Width, 13 inch Reel.
NI--780S--2: R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for AFT21S230S and AFT21S232S parts will be available for 2 years after release of
AFT21S230S and AFT21S232S. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in
the R5 tape and reel option. At the end of the 2 year period customers who have purchased this device in the R5 tape and reel
option will be offered AFT21S230S and AFT21S232S in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2012
 Initial Release of Data Sheet
1
Nov. 2012
 Corrected Tape and Reel tape width from 32 mm to 44 mm, p. 1, 14
AFT21S230SR3 AFT21S232SR3
14
RF Device Data
Freescale Semiconductor, Inc.
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E 2012 Freescale Semiconductor, Inc.
AFT21S230SR3 AFT21S232SR3
Document
Number:
RF
Device
Data AFT21S230S_232S
Rev. 1, 11/2012
Freescale
Semiconductor, Inc.
15