BAT54XV2 Schottky Barrier Diodes Features • • • • • • • Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1 Pb-free Version and RoHS Compliant Matte Tin (Sn) Lead Finish Green Mold Compound Absolute Maximum Ratings * Symbol Cathode Anode ELECTRICAL SYMBOL SOD-523F Band Indicates Cathode BAT54XV2 Marking : 5B TA=25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 30 V Maximum DC Blocking Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Peak Forward Surge Current 4 A +125 °C VRRM VR TJ Parameter Operating Junction Temperature TSTG Storage Temperature Range -65 to +125 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Power Dissipation RθJA Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics Symbol BVR Test Condition IR=10μA IR Reverse Leakage Current VR=25V VF Forward Voltage IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA C 200 500 mW °C/W Min. Typ. Max. 30 Units V 2 μA 0.24 0.32 0.40 0.50 0.80 V Reverse Recovery Time IF=IR=10mA RL=100Ω IRR=1mA 5 nS Capacitance VR=1V, f=1MHz 10 pF © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. A1 Units TA=25°C unless otherwise noted Parameter Breakdown Voltage TRR Value www.fairchildsemi.com 1 BAT54XV2 — Schottky Barrier Diodes January 2010 BAT54XV2 — Schottky Barrier Diodes Typical Performance Characteristics Reverse Current vs Reverse Voltage 10 6 10 5 10 4 10 3 10 2 10 1 10 0 o Reverse Current, IR [nA] 125 C o 75 C o 25 C o 10 -25 C -1 0 5 10 15 20 25 30 35 40 Reverse Voltage, VR [V] Forward Voltage vs Forward Current Forward Current, IF [mA] 1000 100 o 125 C 10 o 75 C o 25 C 1 o -25 C 0.1 0 100 200 300 400 500 600 700 800 Forward Voltage, VF [mV] © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. A1 www.fairchildsemi.com 2 BAT54XV2 — Schottky Barrier Diodes Typical Performance Characteristics (Continued) Total Capacitance 20 o TA=25 C f=1MHz Capacitance, CT [pF] 15 10 5 0 0 5 10 15 20 25 30 35 40 Reverse Voltage, VR [V] Power Derating Curve Power Dissipation, PD [mW] 250 200 150 100 50 0 0 25 50 75 100 125 150 o Temperature, TA[ C] © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. A1 www.fairchildsemi.com 3 BAT54XV2 — Schottky Barrier Diodes Physical Dimension SOD-523F © 2009 Fairchild Semiconductor Corporation BAT54XV2 Rev. A1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com