FDD6637_F085 ® P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 ® RoHS Compliant FDD6637_F085 P-Channel PowerTrench December 2010 MOSFET ©2010 Fairchild Semiconductor Corporation FDD6637_F085 Rev. C 1 www.fairchildsemi.com Symbol VDSS Parameter Ratings -35 Drain to Source Voltage VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) VGS ID EAS PD TJ, TSTG Gate to Source Voltage Units V -45 V ±25 V Drain Current Continuous (TC < 155oC, VGS = 10V) -21 Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 1) 61 mJ Power Dissipation 68 W Dreate above 25oC 0.46 W/oC Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case 2.2 o C/W RθJA Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 o C/W Package Marking and Ordering Information Package TO-252 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V -35 - - V IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V - - -1 μA IGSS Gate to Source Leakage Current VGS = ±25V - - ±100 nA VGS = VDS, ID = -250μA -1 -1.6 -3 V - 9.7 11.6 On Characteristics VGS(th) Gate to Source Threshold Voltage ID = -14A, VGS= -10V rDS(on) gFS Drain to Source On Resistance Forward Transconductance ID = -11A, VGS= -4.5V - 14.4 18 ID = -14A, VGS= -10V, TC = 150oC - 15.3 18 VDS = -5V, ID = -14A - 35 - VDS = -20V, VGS = 0V, f = 1MHz - 2370 - pF - 470 - pF pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 250 - RG Gate Resistance f = 1MHz - 3.6 - Ω Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V - 45 63 nC Qg(5) Total Gate Charge at -5V VGS = 0 to -5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge FDD6637_F085 Rev. C 2 VDD = -20V ID = -14A - 25 35 nC - 7 - nC - 10 - nC www.fairchildsemi.com MOSFET Device FDD6637_F085 ® Device Marking FDD6637 FDD6637_F085 P-Channel PowerTrench MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units - 18 32 ns - 10 20 ns - 62 100 ns - 36 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -20V, ID = -1A, VGS = -10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = -14A IF = -14A, dISD/dt = 100A/μs - -0.8 -1.2 V - 28 37 ns - 15 20 nC Notes: 1: Starting TJ = 25oC, L = 1mH, IAS = -11A, VGS=10V, VDD=-35V during the inductor charging time and 0V during the time in avalanche ® FDD6637_F085 P-Channel PowerTrench Electrical Characteristics TC = 25oC unless otherwise noted MOSFET This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD6637_F085 Rev. C 3 www.fairchildsemi.com -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 70 1.2 1.0 0.8 0.6 0.4 0.2 CURRENT LIMITED BY PACKAGE 60 50 VGS = -10V 40 30 VGS = -4.5V 20 10 o RθJC = 2.2 C/W 0.0 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature 2 D = 0.50 0.20 0.10 0.05 0.02 0.01 MOSFET NORMALIZED THERMAL IMPEDANCE, ZθJC ® DUTY CYCLE - DESCENDING ORDER 1 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10V TC = 25oC -IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD6637_F085 Rev. C FDD6637_F085 P-Channel PowerTrench Typical Characteristics 4 www.fairchildsemi.com 60 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 300 100 100us STARTING TJ = 25oC 10 10 1ms 10ms DC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.3 SINGLE PULSE TJ = MAX RATED TC = 25oC 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 150oC 1 0.001 90 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area VDD = -5V -ID, DRAIN CURRENT (A) 80 TJ = -55oC TJ = 25oC 60 o TJ = 175 C 40 20 0 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 50 40 30 TJ = 175oC 20 10 0 TJ = 25oC 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD6637_F085 Rev. C 60 VGS = -10V VGS = -6V VGS = -5V VGS = -4.5V VGS = -4V VGS = -3.5V VGS = -3V 40 20 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = -14A 80 0 6 Figure 7. Transfer Characteristics 70 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX MOSFET -ID, DRAIN CURRENT (A) 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ® 100 Figure 6. Unclamped Inductive Switching Capability 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = -14A VGS = -10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 FDD6637_F085 P-Channel PowerTrench Typical Characteristics www.fairchildsemi.com 1.3 1.10 NORMALIZED GATE THRESHOLD VOLTAGE 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250μA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Coss Crss 100 Figure 13. Capacitance vs Drain to Source Voltage FDD6637_F085 Rev. C 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 10 VDD = -10V 8 MOSFET 1000 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.00 ® Ciss 100 0.1 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 f = 1MHz VGS = 0V ID = -250μA VDD = -20V 6 VDD = -30V 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 14. Gate Charge vs Gate to Source Voltage 6 FDD6637_F085 P-Channel PowerTrench Typical Characteristics www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 FDD6637_F085 Rev. C 7 www.fairchildsemi.com ® MOSFET *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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