FDB9406_F085 N-Channel Power Trench® MOSFET December 2012 FDB9406_F085 N-Channel Power Trench® MOSFET 40V, 110A, 1.8mΩ D D Features Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263AB FDB SERIES Applications S S Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Gate to Source Voltage Ratings 40 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) A 172 mJ Power Dissipation 176 W Derate above 25oC 1.18 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.85 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDB9406 Device FDB9406_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.04mH, IAS = 88A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2012 Fairchild Semiconductor Corporation FDB9406_F085_F085 Rev. C1 1 www.fairchildsemi.com Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 2.83 4.0 V - 1.31 1.8 mΩ - 2.20 2.8 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Total Gate Charge at 5V VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge - VDS = 25V, VGS = 0V, f = 1MHz VDD = 32V ID = 80A - 7710 - pF - 2015 - pF - 102 - pF - 2.1 - Ω - 107 138 nC - 14 19 nC - 33 - nC 18 - nC Switching Characteristics ton Turn-On Time - - 107 ns td(on) Turn-On Delay Time - 28 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 48 - ns - 50 - ns Fall Time - 20 - ns Turn-Off Time - - 100 ns VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage ISD = 80A, VGS = 0V - - 1.25 V Trr Reverse Recovery Time - 81 92 ns Qrr Reverse Recovery Charge IF = 80A, dISD/dt = 100A/μs, VDD=32V - 109 140 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDB9406_F085 Rev. C1 2 www.fairchildsemi.com FDB9406_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 ID , DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) V GS = 10V CURRENT LIMITED BY SILICON 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC CURRENT LIMITED BY PACKAGE 250 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 I DM PEAK CURRENT (A) , VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK 10 CURRENT AS FOLLOWS: 175 - TC I = I2 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 0 1 10 Figure 4. Peak Current Capability FDB9406_F085 Rev. C1 3 www.fairchildsemi.com FDB9406_F085 N-Channel Power Trench® MOSFET Typical Characteristics IAS, AVALANCHE CURRENT (A) 1000 ID, DRAIN CURRENT (A) 10000 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) 1 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 10ms DC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING T J = 25oC 10 STARTING TJ = 150o C 1 1E-3 0.01 0.1 1 10 100 1000 t AV, TIME IN AVALANCHE (ms) 10 V DS, DRAIN TO SOURCE VOLTAGE (V) 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX 250 I D, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) 300 300 VDD = 5V 200 TJ = 175oC 150 TJ = 25oC 100 T J = -55oC 50 0 100 TJ = 175 oC 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 0.4 0.6 0.8 1.0 1.2 Figure 8. Forward Diode Characteristics 350 350 280 V GS 210 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 140 I D, DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 0.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics 5V 70 0 0.0 T J = 25 oC 10 1 0.0 3 VGS = 0 V 80μs PULSE WIDTH Tj=25oC VGS 15V5.5V Top 10V 8V 7V 6V 5.5V 5V Bottom 210 5V 140 70 80μ s PULSE WIDTH Tj=175oC 0 0.0 0.5 1.0 1.5 2.0 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics FDB9406_F085 Rev. C1 280 0.5 1.0 1.5 2.0 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDB9406_F085 N-Channel Power Trench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE r DS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 20 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX ID = 80A 16 12 T J = 25oC 8 o T J = 175 C 4 0 2 4 6 8 1.8 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 ID = 80A V GS = 10V 0.8 0.6 -80 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE( oC) 200 VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Rdson vs Gate Voltage Figure 12. Normalized Rdson vs Junction Temperature 1.2 VGS = VDS ID = 250 μ A 1.0 1.1 0.8 1.0 0.6 0.9 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 f = 1MHz V GS = 0V 10 0.1 Crss 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs Drain to Source Voltage FDB9406_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 10 ID = 80A VDD = 16V 8 VDD = 20V VDD = 24V 6 4 2 0 0 20 40 60 80 Qg, GATE CHARGE(nC) 100 120 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDB9406_F085 N-Channel Power Trench® MOSFET Typical Characteristics tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDB9406_F085 Rev. C1 6 www.fairchildsemi.com FDB9406_F085 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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