FDBL0630N150 N-Channel Power Trench® MOSFET 150V, 169A, 6.3mΩ Features Typ rDS(on) = 5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package drawing, please refer to the Fairchild website at https://www.fairchildsemi.com/evaluate/package‐ specifications/packageDetails.html?id=PN_PSOFA‐008 Solar Inverters UPS and Energy Inverters Energy Storage Load Switch MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 150 Units V ±20 V Gate to Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 169 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) A 502 mJ Power Dissipation 500 W Derate above 25oC 3.3 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient (Note 3) C 0.3 o C/W 43 o C/W Package Marking and Ordering Information Device Marking FDBL0630N150 Device FDBL0630N150 Package MO-299A Reel Size - Tape Width - Quantity - Notes: 1: Current is limited by junction temperature. 2: Starting TJ = 25°C, L = 0.24mH, IAS = 64A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2014 Fairchild Semiconductor Corporation FDBL0630N150 Rev.C2 1 www.fairchildsemi.com FDBL0630N150 N-Channel Power Trench® MOSFET November 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 150V, VGS = 0V 150 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 2.8 4.0 V - 5 6.3 mΩ - 14 17.5 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 75V, VGS = 0V, f = 1MHz VDD = 75V ID = 80A - 5805 - pF - 536 - pF - 16 - pF - 2.2 - Ω - 70 90 nC - 10.5 13 nC - 32.5 - nC - 10 - nC Switching Characteristics ton Turn-On Time - - 80 ns td(on) Turn-On Delay Time - 39 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 30 - ns - 70 - ns Fall Time - 23 - ns Turn-Off Time - - 130 ns V VDD = 75V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=120V - 108 125 ns - 323 467 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDBL0630N150 Rev.C2 2 www.fairchildsemi.com FDBL0630N150 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 160 120 80 40 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC VGS = 10V IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDBL0630N150 Rev.C2 3 www.fairchildsemi.com FDBL0630N150 N-Channel Power Trench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10ms 100ms IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 TJ = -55oC 40 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 1 10 100 1000 10000 VGS = 0 V 100 TJ = 175 oC 10 TJ = 25 oC 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 300 250 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.1 400 TJ = 175oC 2 0.01 Figure 6. Unclamped Inductive Switching Capability 120 0 STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V TJ = 25oC STARTING TJ = 25oC 10 tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 160 100 1 0.001 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 200 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 5V 50 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics FDBL0630N150 Rev.C2 200 150 5V 100 50 0 5 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 250 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDBL0630N150 N-Channel Power Trench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 40 30 20 o TJ = 175 C 10 0 2 TJ = 25oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 2.0 1.5 1.0 ID = 80A VGS = 10V 0.5 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized Rdson vs Junction Temperature 1.10 VGS = VDS ID = 250μA 1.2 ID = 1mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 10 Crss f = 1MHz VGS = 0V 1 0.1 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs Drain to Source Voltage FDBL0630N150 Rev.C2 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.5 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 3.0 10 ID = 80A VDD = 75V 8 VDD =60V VDD = 90V 6 4 2 0 0 20 40 60 Qg, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDBL0630N150 N-Channel Power Trench® MOSFET Typical Characteristics tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. 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