NTE5368 & NTE5369 Silicon Controlled Rectifier (SCR) 125 Amp Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VRRM, VDRM, VDSM NTE5368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5369 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non–Repetitive Peak Reverse Blocking Voltage, VRSM NTE5368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5369 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On–State Current (Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . 75A RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A Continuous On–State Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A Peak One–Cycle Surge (10ms duration, 60% VRRM re–applied), ITSM (1) . . . . . . . . . . . . . . . . 1500A Non–Repetitive On–State Current (10ms duration, VR ≤ 10V), ITSM (2) . . . . . . . . . . . . . . . . . . . 1650A Maximum Permissible Surge Energy (VR ≤ 10V), I2t 10ms duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13600A2s 3ms duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10000A2s Peak Forward Gate Current (Anode positive with respect to cathode), IFGM . . . . . . . . . . . . . . . . 14A Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM . . . . . . . . . . . . . . . 20V Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Average Gate Power, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Peak Gate Power (100µs pulse width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Rate of Rise of Off–State Voltage (To 80% VDRM gate open–circuit), dv/dt . . . . . . . . . . . . . 200V/µs Rate of Rise of On–State Current, di/dt (Gate drive 20V, 20Ω with tr ≤ 1µs, anode voltage ≤ 80% VDRM) Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/µs Non–Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/µs Operating Temperature Range, Ths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Case, RthJC (For a device with a maximum forward voltage drop characteristic) . . . . . . . . . . . . 0.23°C/W Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified) Peak On–State Voltage (ITM = 280A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.54V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7V Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3mΩ Repetitive Peak Off–State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25°C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V Typical Stored Charge (ITM = 200A, drR/dt = 10A/µs, VRM = 50V, 50% chord value), Qrr . . . . 25µC Circuit Commutated Turn–Off Time (ITM = 200A, diR/dt = 10A/µs, VRM = 50V), tq (200V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25–40µs (20V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (typical) 20–35µs 1.227 (31.18) Dia (Across Corners) .280 (7.11) .650 (16.51) Max Cathode .260 (6.6) Dia Max Gate .415 (10.55) 1.810 (45.97) Max 1.031 (26.18) Dia Max .500 (12.7) Max .812 (20.6) Anode 1/2–20 UNF (Terminal 3)