NTE5371 & NTE5372 Silicon Controlled Rectifier (SCR) for High Speed Switching 125 Amp, TO94 Features: D All Diffused Design D Center Amplifying Gate D High Surge Current Capability D Low Thermal Impedance D High Speed Performance Applications: D Inverters D Choppers D Induction Heating D All Types of Force−Commutated Converters Maximum Ratings and Electrical Characteristics: Max. Repetitive Peak Voltages, VRRM, VDRM NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Max. Non−Repetitive Peak Voltage, VRSM NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On−State Current (180° Conduction, Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . . 85A Max. RMS On−State Current (DC at TC = +77°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135A Max. Peak One Half−Cycle Non−Repetitive Surge Current (TJ = +125°C, Sinusoidal Half Wave), ITSM (No Voltage Reapplied) (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2560A (100% VRRM Reapplied) (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2060A (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2160A Max. Permissible Surge Energy (TJ = +125°C, Sinusoidal Half Wave), I2t (No Voltage Reapplied) (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30KA2s (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27KA2s (100% VRRM Reapplied) (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21KA2s (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19KA2s Maximum Ratings and Electrical Characteristics (Cont’d): Max. I2√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I2√t . . . . . . . . . . . . . . . . . . . 300KA2√s Max. Peak On−State Voltage (ITM = 300A, TJ = +125°C, tp = 10ms Sine Wave Pulse), VTM . . 2.15V Threshold Voltage (TJ = +125°C), VT(TO) Low Level (16.7% x π x IT(AV) < I < π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46V High Level (I > π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52V Forward Slope Resistance (TJ = +125°C), rt Low Level (16.7% x π x IT(AV) < I < π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32Ω High Level (I > π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.34Ω Max. Holding Current (TJ = +25°C, IT > 30A), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Typical Latching Current (TJ = +25°C, VA = 12V, Ra = 6Ω, IG = 1A), IL . . . . . . . . . . . . . . . . . . 1000mA Max. Non−Repetitive Rate of Rise of On−State Current (TJ = +25°C, VDRM = Rated VDRM), di/dt (ITM = ITM = 2 x di/dt) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs Typical Delay Time (TJ = +125°C, VDRM = Rated VDRM), td (ITM = 50A DC, tp = 1μs, Resistive Load, Gate Pulse: 10V, 5Ω Source) . . . . . . . . . . 0.80μs Max. Turn−Off Time, tq (TJ = +125°C, ITM = 100A, Commutating di/dt = 10A/μs, VR = 50V, tp = 200μs) NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 to 20μs NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 to 30μs Max. Critical Rate of Rise of Off−State Voltage, dv/dt (TJ = +125°C, Linear To 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/μs Max. Peak Reverse and Off−State Leakage Current, IRRM, IDRM (TJ = +125°C, Rated VDRM/VRRM Applied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Max. Peak Gate Power (TJ = +125°C, f = 50Hz, d% = 50), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Max. Average Gate Power (TJ = +125°C, f = 50Hz, d% = 50), PG(AV) . . . . . . . . . . . . . . . . . . . . . . 5W Max. Peak Positive Gate Current (TJ = +125°C, tp ≤ 5ms), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Max. Peak Gate Voltage (TJ = +125°C, tp ≤ 5ms), VGM Positive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Max. DC Gate Current Required to Trigger (TJ = +25°C, VA = 12V, Ra = 6Ω), IGT . . . . . . . . . 200mA Max. DC Gate Voltage Required to Trigger (TJ = +25°C, VA = 12V, Ra = 6Ω), VGT . . . . . . . . . . . . 3V Max. DC Gate Current not to Trigger (TJ = +125°C, Rated VDRM Applied), IGD . . . . . . . . . . . . . 20mA Max. DC Gate Voltage not to Trigger (TJ = +125°C, Rated VDRM Applied), VGD . . . . . . . . . . . 250mV Maximum Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C Maximum Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C Maximum Thermal Resistance, Junction−to−Case (DC Operation), RthJC . . . . . . . . . . . . . 0.195K/W Maximum Thermal Resistance, Case−to−Heatsink, RthCS (Mounting Surface Smooth, Flat and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W 1.227 (31.18) Max (Across Corners) ÇÇÇ ÇÇÇ .875 (22.22) Dia (Ceramic) For No. 6 Screw Cathode 7.500 Cathode (190.5) (Red) Max (Terminals 1 & 2) 1.031 (26.18) Dia Max Seating Plane .827 (27.0) Max .280 (7.11) Dia Max Gate (White) 6.260 (159.0) Max (Terminal 3) 2.500 (63.5) Max .500 (12.7) Max 1/2−20 UNF Anode