NTE5371

NTE5371 & NTE5372
Silicon Controlled Rectifier (SCR)
for High Speed Switching
125 Amp, TO94
Features:
D All Diffused Design
D Center Amplifying Gate
D High Surge Current Capability
D Low Thermal Impedance
D High Speed Performance
Applications:
D Inverters
D Choppers
D Induction Heating
D All Types of Force−Commutated Converters
Maximum Ratings and Electrical Characteristics:
Max. Repetitive Peak Voltages, VRRM, VDRM
NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Max. Non−Repetitive Peak Voltage, VRSM
NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On−State Current (180° Conduction, Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . . 85A
Max. RMS On−State Current (DC at TC = +77°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135A
Max. Peak One Half−Cycle Non−Repetitive Surge Current (TJ = +125°C, Sinusoidal Half Wave), ITSM
(No Voltage Reapplied)
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2450A
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2560A
(100% VRRM Reapplied)
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2060A
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2160A
Max. Permissible Surge Energy (TJ = +125°C, Sinusoidal Half Wave), I2t
(No Voltage Reapplied)
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30KA2s
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27KA2s
(100% VRRM Reapplied)
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21KA2s
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19KA2s
Maximum Ratings and Electrical Characteristics (Cont’d):
Max. I2√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I2√t . . . . . . . . . . . . . . . . . . . 300KA2√s
Max. Peak On−State Voltage (ITM = 300A, TJ = +125°C, tp = 10ms Sine Wave Pulse), VTM . . 2.15V
Threshold Voltage (TJ = +125°C), VT(TO)
Low Level (16.7% x π x IT(AV) < I < π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.46V
High Level (I > π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52V
Forward Slope Resistance (TJ = +125°C), rt
Low Level (16.7% x π x IT(AV) < I < π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32Ω
High Level (I > π x IT(AV)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.34Ω
Max. Holding Current (TJ = +25°C, IT > 30A), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Typical Latching Current (TJ = +25°C, VA = 12V, Ra = 6Ω, IG = 1A), IL . . . . . . . . . . . . . . . . . . 1000mA
Max. Non−Repetitive Rate of Rise of On−State Current (TJ = +25°C, VDRM = Rated VDRM), di/dt
(ITM = ITM = 2 x di/dt) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs
Typical Delay Time (TJ = +125°C, VDRM = Rated VDRM), td
(ITM = 50A DC, tp = 1μs, Resistive Load, Gate Pulse: 10V, 5Ω Source) . . . . . . . . . . 0.80μs
Max. Turn−Off Time, tq
(TJ = +125°C, ITM = 100A, Commutating di/dt = 10A/μs, VR = 50V, tp = 200μs)
NTE5371 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 to 20μs
NTE5372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 to 30μs
Max. Critical Rate of Rise of Off−State Voltage, dv/dt
(TJ = +125°C, Linear To 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/μs
Max. Peak Reverse and Off−State Leakage Current, IRRM, IDRM
(TJ = +125°C, Rated VDRM/VRRM Applied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Max. Peak Gate Power (TJ = +125°C, f = 50Hz, d% = 50), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Max. Average Gate Power (TJ = +125°C, f = 50Hz, d% = 50), PG(AV) . . . . . . . . . . . . . . . . . . . . . . 5W
Max. Peak Positive Gate Current (TJ = +125°C, tp ≤ 5ms), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Max. Peak Gate Voltage (TJ = +125°C, tp ≤ 5ms), VGM
Positive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Negative . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Max. DC Gate Current Required to Trigger (TJ = +25°C, VA = 12V, Ra = 6Ω), IGT . . . . . . . . . 200mA
Max. DC Gate Voltage Required to Trigger (TJ = +25°C, VA = 12V, Ra = 6Ω), VGT . . . . . . . . . . . . 3V
Max. DC Gate Current not to Trigger (TJ = +125°C, Rated VDRM Applied), IGD . . . . . . . . . . . . . 20mA
Max. DC Gate Voltage not to Trigger (TJ = +125°C, Rated VDRM Applied), VGD . . . . . . . . . . . 250mV
Maximum Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Maximum Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Maximum Thermal Resistance, Junction−to−Case (DC Operation), RthJC . . . . . . . . . . . . . 0.195K/W
Maximum Thermal Resistance, Case−to−Heatsink, RthCS
(Mounting Surface Smooth, Flat and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.08K/W
1.227 (31.18) Max (Across Corners)
ÇÇÇ
ÇÇÇ
.875 (22.22) Dia (Ceramic)
For No. 6 Screw
Cathode
7.500 Cathode
(190.5)
(Red)
Max
(Terminals 1 & 2)
1.031
(26.18)
Dia Max
Seating Plane
.827
(27.0)
Max
.280 (7.11)
Dia Max
Gate
(White)
6.260
(159.0)
Max
(Terminal 3)
2.500
(63.5)
Max
.500 (12.7) Max
1/2−20 UNF
Anode