MBR3045PT Preferred Device SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS Parallel Operation at Full Rating Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Pb−Free Package is Available* Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.3 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 3 4 Leads are Readily Solderable MARKING DIAGRAM • Lead Temperature for Soldering Purposes: 4 260°C Max. for 10 Seconds MAXIMUM RATINGS Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 105°C) Per Device Per Diode IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Current (2.0 s, 1.0 kHz) Per Diode (See Figure 6) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s SOT−93 CASE 340D PLASTIC 1 2 A AYWWG MBR3045PT 3 30 15 30 A A Y WW G ORDERING INFORMATION Device MBR3045PT MBR3045PTG Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. = Assembly Location = Year = Work Week = Pb−Free Package Package Shipping SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: MBR3045PT/D MBR3045PT THERMAL CHARACTERISTICS (Per Diode) Rating Symbol Max Unit Thermal Resistance, Junction−to−Case RJC 1.4 °C/W Thermal Resistance, Junction−to−Ambient RJA 40 °C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) (iF = 20 Amps, TC = 125°C) (iF = 30 Amps, TC = 125°C) (iF = 30 Amps, TC = 25°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.60 0.72 0.76 mA 100 1.0 100 50 30 20 100 TJ = 150°C 10 IR , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 25°C 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TJ = 150°C 125°C 10 100°C 1.0 75°C 0.1 25°C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 5.0 10 15 20 25 30 35 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 45 50 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MBR3045PT 20 I I 15 PK (RESISTIVELOAD) AV SQUARE WAVE 10 dc 5.0 I (CAPACITIVELOAD) PK 20, 10, 5 I AV 0 60 70 80 90 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (°C) 20 I (CAPACITIVELOAD) PK 20, 10, 5 I SINE WAVE RESISTIVE LOAD AV 15 SQUARE WAVE 10 dc TJ = 125°C 5.0 0 0 Figure 3. Current Derating (Per Leg) 5.0 10 15 20 25 30 35 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Forward Power Dissipation (Per Leg) +150 V, 10 mAdc 2.0 k 3000 VCC C, CAPACITANCE (pF) 2000 12 V 12 Vdc D.U.T. 100 2N2222 1000 900 800 700 600 500 + 4.0 F 2.0 s 1.0 kHz CURRENT AMPLITUDE ADJUST 0−10 AMPS 400 300 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 40 50 100 CARBON 2N6277 1.0 CARBON 1N5817 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 3 MBR3045PT PACKAGE DIMENSIONS SOT−93 (TO−218) PLASTIC CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B E U S 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. MBR3045PT/D