PANJIT BAS21S

DATA SHEET
BAS21A/C/S
SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES
VOLTAGE
250 Volts
POWER
SOT- 23
250mWatts
Unit: inch (mm)
FEATURES
• High reverse bearkdown voltage.
.103(2.60)
• Galvanically isolated dual configurations to save board space.
.086(2.20)
.056(1.40)
• Surface mount package ideally suited for automatic insertion.
.047(1.20)
• Low reverse leakage current.
.007(.20)MIN
.119(3.00)
.110(2.80)
• Fast switching speed.
• In compliance with EU RoHS 2002/95/EC directives
.044(1.10)
MECHANICAL DATA
.006(.15)
.002(.05)
.006(.15)MAX
.020(.50)
.013(.35)
Case: SOT-23, Plastic
.035(0.90)
.083(2.10)
.066(1.70)
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking : BAS21A:21A, BAS21C:21C, BAS21S:21S
ABSOLUTE RATINGS
PA RA M E TE R
M a xi m um R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
A v e r a g e R e c t i f i e d C u r r e n t a t Te m p = 2 5 O C
N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 µ s
S ym b o l
Va l ue
U ni t s
VR
250
V
V RRM
250
V
0 .2
A
4.0
A
I
O
IF S M
THERMAL CHARACTERISTICS
PA RA ME TE R
S ym b o l
Va lue
Uni ts
P o we r D i s s i p a ti o n
P TOT
250
mW
The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt
R θJ A
357
J u n c t i o n Te m p e r a t u r e
TJ
150
O
C
S t o r a g e Te m p e r a t u r e
T S TG
-55 to 150
O
C
C /W
COMMON ANODE
COMMON CATHODE
SERIES
3
3
3
2
1
BAS21A
REV.0.1-FEB.11.2009
O
2
1
BAS21C
2
1
BAS21S
PAGE . 1
ELECTRICAL CHARACTERISTICS
PARAMETER
Symbol
Reverse Breakdown Voltage
V(BR)
Test Condition
MIN.
TYP.
MAX.
Units
IR=100 uA
--
--
250
V
Reverse Current
IR
VR=200 V
VR=200 V, TJ = 150OC
--
--
0.1
100
uA
Forward Voltage
VF
IF=1.0mA
IF=100mA
--
--
0.70
1.00
V
Maximum Junction Capacitance
CJ
VR=0V, f=1.0MHZ
--
--
5.0
pF
Reverse Recovery Time
Trr
IF=IR=30mA, RL=100Ω
--
--
50
ns
ELECTRICAL CHARACTERISTICS CURVES
100
100
I R , LEAKAGE CURRENT, uA
FORWARD CURRENT, mA
1000
TJ =25OC
10
1.0
0.1
0.01
0
1.0
10
1.0
0.1
0.01
2.0
FORWARD VOLTAGE, VOLTS
Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE
P D , POWER DISSIPATION (mW)
DIODE CAPACITANCE, pF
4.5
3.0
1.5
2
4
6
REVERSE VOLTAGE, VOLTS
FIG. 3 TYPICAL JUNCTION CAPACITANCE
REV.0.1-FEB.11.2009
200
O
6.0
0
100
T J , JUNCTION TEMPERATURE, C
FIG. 1-TYPICAL FORWARD CHARACTERISTIC
0
0
8
500
400
300
200
100
0
50
100
150
200
O
AMBIENT TEMPERATURE( C)
FIG. 4 POWER DERATING CURVE
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.11.2009
PAGE . 3