PJSD05 SERIES 400W LOW CLAMPING VOLTAGE SINGLE TVS FOR PROTECTION This TVS/Zener Series has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 5V, 12V, 15V and 24Vdc .These devices come in an industry standard SOD123 package making them suitable for Portable/Computing Electronics, where the board space is a premium. SPECIFICATION FEATURES 400W Power Dissipation (8/20µs Waveform) Very Low Leakage Current IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance K SOD123 Package A APPLICATIONS Personal Digital Assistant (PDA) SOD123 SOD123 Digital Cameras Portable Instrumentation Mobile Phones and Accessories Desktops, Laptops MAXIMUM RATINGS Symbol Value Units Peak Pulse Power (8/20µs Waveform) P pp 400 W ESD Voltage (HBM) V ESD 25 kV Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range Tstg -55 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD05 Parameter Reverse Stand-Off Voltage Conditions Symbol Min V WRM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VR = 5V 20 µA Clamping Voltage (8/20µs) Vc I pp = 5A 7.5 V Clamping Voltage (820µs) Vc I pp = 24A 16 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz 550 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz 235 pF 2/18/2009 I BR = 1 mA Page 1 6.0 V www.panjit.com PJSD05 Series ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD12 Parameter Reverse Stand-Off Voltage Conditions Symbol Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc I pp = 5A Clamping Voltage (8/20µs) Vc Off State Junction Capacitance Cj Max Units 12 V 13.3 V 1 µA 14.5 V I pp = 17A 23 V 0 Vdc Bias f = 1MHz 180 pF Max Units 15 V PJSD15 Parameter Reverse Stand-Off Voltage Conditions Symbol Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Off State Junction Capacitance 16.7 V 1 µA I pp = 5A 19 V Vc I pp = 14A 28 V Cj 0 Vdc Bias f = 1MHz 165 pF Max Units 24 V PJSD24 Parameter Reverse Stand-Off Voltage Conditions Symbol VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Off State Junction Capacitance 2/18/2009 Min Typical 26.7 V 1 µA I pp = 5A 29 V Vc I pp = 11A 37 V Cj 0 Vdc Bias f = 1MHz 120 pF Page 2 www.panjit.com PJSD05 SERIES TYPICAL CHARACTERISTICS Surge Pulse Waveform Definition Clamping voltage vs Ipp 8/20µs Surge 40 35 PJSD15 30 Percent of Ipp Clamping Voltage, V PJSD24 PJSD12 25 PJSD05 20 15 10 5 0 0 5 10 15 20 110 100 90 80 70 60 50 40 30 20 10 0 25 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 Peak Current, A Capacitance vs. Biasing Voltage @1MHz 20 25 30 Non-Repetitive Peak Pulse Power vs Pulse Time 1000 Peak Pulse Power - Ppp (W) 600 550 Capacitance, pF 15 time, µsec 500 450 400 350 PJSD05 300 250 200 0 1 2 3 4 5 Bias Voltage, Vdc 2/18/2009 100 10 1 10 100 1000 Pulse Duration, µs Page 3 www.panjit.com PJSD05 SERIES PACKAGE DIMENSIONS AND BOND PAD LAYOUT 2/18/2009 Page 4 www.panjit.com