Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be small and slim. 3 1 2 0~0.1 0.1 0.2 0.1max • 0.4 0.8 0.4 1.6 • 0.75 0.6 0.3 0.5 0.5 1.6 1 : Source 2 : Drain 3 : Gate Specifications SANYO : SMCP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGDS --40 V IG ID 10 mA Drain Current 1 mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Gate Current Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS Gate-to-Source Leakage Current IGSS Cutoff Voltage Zero-Gate Voltage Drain Current VGS(off) IDSS Input Capacitance yfs Ciss Reverse Transfer Capacitance Crss Forward Transfer Admittance Conditions IG=--10µA, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=1µA VDS=10V, VGS=0 VDS=10V, VGS=0, f=1kHz Ratings min typ max --40 V --500 --1.5 50 0.06 VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz Unit pA --2.3 V 130 µA 0.13 mS 1.7 pF 0.7 pF Marking : KB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42004GB TS IM TA-100829 No.7671-1/3 2SK3738 ID -- VDS 140 120 120 V GS=0 80 --0.2V 60 --0.4V --0.6V 40 --0.8V --1.0V --1.2V --1.4V 20 0 0 1 2 VGS=0 100 --0.2V 80 --0.4V 60 --0.6V 40 --0.8V --1.0V 20 --1.4V --1.2V 0 3 4 Drain-to-Source Voltage, VDS -- V 5 0 4 ID -- VGS 8 16 20 ITR00838 ID -- VGS 80 VDS=10V IDSS=50µA 12 Drain-to-Source Voltage, VDS -- V ITR00837 160 VDS=10V IDSS=100µA 70 140 30 20 C --2 5° 100 °C 80 75 °C Ta = 25 °C C 25 40 ° 75 Ta = --2 5 50 120 Drain Current, ID -- µA °C 60 60 40 10 20 0 --1.0 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V --2.4 VDS=10V ID=1µA 2 --1.0 7 --1.6 --1.2 --0.8 --0.4 Gate-to-Source Voltage, VGS -- V yfs -- IDSS 3 0 ITR00840 VDS=10V VGS=0 f=1kHz 2 0.1 7 5 5 3 5 7 100 2 Drain Current, IDSS -- µA 3 3 5 7 100 2 Drain Current, IDSS -- µA IT06668 PD -- Ta 120 IT06669 Ciss -- VDS 10 VGS=0 f=1MHz 7 100 Input Capacitance, Ciss -- pF Allowable Power Dissipation, PD -- mW --2.0 ITR00839 VGS(off) -- IDSS 3 Cutoff Voltage, VGS(off) -- V 0 0 Forward Transfer Admittance, yfs -- mS --1.2 80 60 40 20 0 0 5 3 2 1.0 7 5 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06670 3 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT06671 No.7671-2/3 Drain Current, ID -- µA 100 Drain Current, ID -- µA Drain Current, ID -- µA ID -- VDS 140 2SK3738 Crss -- VDS Reverse Transfer Capacitance, Crss -- pF 5 VGS=0 f=1MHz 3 2 1.0 7 5 3 2 0.1 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT06672 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. PS No.7671-3/3