ECH8501 Ordering number : ENA1581 SANYO Semiconductors DATA SHEET ECH8501 PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP Base Current IB Collector Dissipation Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg PW≤1μs, duty cycle≤1% (--)30 A (--)600 mA When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7011A-007 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View Packing Type : TL 0.25 2.9 0.15 8 Marking 5 MA LOT No. 2.3 4 1 0.65 Electrical Connection 0.3 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collector(NPN TR) 8 : Collector(NPN TR) 0.9 0.25 TL 0.07 2.8 0 t o 0.02 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 72110EA TK IM TC-00002441 No. A1581-1/5 ECH8501 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(--)125mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max (--)0.1 μA (--)0.1 μA 200 560 (260)280 MHz (49)32 pF (--100)75 (--170)110 (--)0.85 (--)1.2 mV V(BR)CBO V(BR)CEO IC=(--)2.5A, IB=(--)125mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V V(BR)EBO ton IE=(--)10μA, IC=0A See specified Test Circuit. (37)30 ns tstg tf See specified Test Circuit. (147)220 ns See specified Test Circuit. (14)12 ns (--30)40 V (--)30 V (--)6 V Note : The specifications shown above are for each individual transistor. Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT Vout IB2 RB VR 50Ω RL + + 100μF 470μF VBE= --5V VCC=12V IC=20IB1= --20IB2=2.5A (For PNP, the polarity is reversed.) 0m --10mA --8mA --6mA --2.0 --1.5 --4mA --1.0 --2mA --0.5 3.5 A 50m A 4.0 70m A --7 0m -- --2.5 0 0 4.5 Collector Current, IC -- A --3.0 --30m --20mA IC -- VCE 5.0 A A 40m A --4.0 --3.5 mA 0 --5 --1 0 Collector Current, IC -- A --4.5 [PNP] A [NPN] A 30m 20m A m 40 10mA 3.0 2.5 2.0 100 mA IC -- VCE --5.0 8mA 6mA 1.5 4mA 1.0 2mA 0.5 IB=0mA --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V --0.5 IT15618 0 0 IB=0mA 0.1 0.2 0.3 0.4 Collector-to-Emitter Voltage, VCE -- V 0.5 IT15619 No. A1581-2/5 ECH8501 IC -- VBE --5 [PNP] IC -- VBE 5 [NPN] VCE=2V 4 --1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1 0 --1.2 25°C 2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V IT15620 hFE -- IC 1000 3 --25°C 25°C --2 --25°C --3 Ta=75° C Collector Current, IC -- A --4 Ta=75° C Collector Current, IC -- A VCE= --2V [PNP] hFE -- IC 1000 [NPN] VCE= --0.5V VCE=0.5V 7 7 DC Current Gain, hFE Ta=75°C 5 DC Current Gain, hFE 1.2 IT15621 25°C 3 --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A hFE -- IC 1000 7 0.01 5 7 --10 IT15622 2 3 5 7 0.1 2 3 5 7 1.0 2 [PNP] hFE -- IC 1000 5 7 10 IT15623 [NPN] VCE= --2V VCE=2V 7 7 Ta=75°C 5 DC Current Gain, hFE DC Current Gain, hFE 3 Collector Current, IC -- A 25°C 3 --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC [PNP] --100 7 5 °C 75 3 = Ta 2 25 --10 C 5° --2 °C 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT15678 3 5 7 0.1 2 3 5 7 1.0 2 3 VCE(sat) -- IC 3 IC / IB=20 2 2 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 100 0.01 5 7 --10 IT15624 5 7 10 IT15625 [NPN] IC / IB=20 2 100 7 5 °C 75 C 5° --2 3 = Ta 2 10 25 °C 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT15679 No. A1581-3/5 ECH8501 VCE(sat) -- IC 7 [PNP] 3 2 --100 7 °C 75 5 = Ta 3 2 C 5° --2 °C 25 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC [PNP] 2 --1.0 Ta= --25°C 7 25°C 5 75°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 °C 75 C 5° --2 = Ta 3 2 °C 25 [PNP] 7 5 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V f T -- IC 7 100 7 5 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 1.0 2 3 5 7 10 IT15680 [NPN] Ta= --25°C 7 25°C 5 75°C 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15631 Cob -- VCB [NPN] 7 5 3 2 2 5 7 --10 IT15634 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V [PNP] VCE= --10V 2 3 1.0 IT15632 3 2 3 IC / IB=20 10 1.0 5 fT -- IC 7 Gain-Bandwidth Product, fT -- MHz 5 2 VBE(sat) -- IC 100 Output Capacitance, Cob -- pF 100 3 5 7 0.1 f=1MHz 2 2 3 Collector Current, IC -- A f=1MHz 2 --1.0 2 2 2 0.01 5 7 --10 IT15630 Cob -- VCB 3 Output Capacitance, Cob -- pF 5 3 IC / IB=20 Collector Current, IC -- A Gain-Bandwidth Product, f T -- MHz 7 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 --0.01 100 7 0.01 5 7 --10 IT15628 Collector Current, IC -- A 2 --0.01 2 10 --10 7 --0.01 [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 VCE(sat) -- IC 3 IC / IB=50 5 IT15633 [NPN] VCE=10V 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT15635 No. A1581-4/5 ECH8501 PC -- Ta 1.8 1.6 100µs IC=5A 1 10 ms ms 10 0m s DC op era tio n Ta=25°C Single pulse For PNP, minus sign is omitted. 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 [PNP/NPN] When mounted on ceramic substrate (900mm2×0.8mm) ≤1µs 1.0 7 5 3 2 0.1 7 5 3 2 [PNP/NPN] Collector Dissipation, PC -- W 10 7 5 3 2 ASO ICP=30A s 0µ 50 Collector Current, IC -- A 7 5 3 2 1.4 1.3 1.2 To tal Di ss 1u ipa nit tio n 1.0 0.8 0.6 0.4 0.2 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 5 IT15636 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15457 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1581-5/5