2SA2012 / 2SC5565 Ordering number : EN6306A SANYO Semiconductors DATA SHEET 2SA2012 / 2SC5565 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, strobes. Features • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation. Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--30)40 V (--)30 V VEBO IC (--)5 V (--)5 A (--)8 Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) A (--)600 mA Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Marking 2SA2012 : AS 2SC5565 : FB Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’ s products or equipment. http://semicon.sanyo.com/en/network 40710EA TK IM / 21400TS (KOTO) TA-2520 No.6306-1/5 2SA2012 / 2SC5565 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain hFE fT VCE=(--)2V, IC=(--)500mA Gain-Bandwidth Product Output Capacitance Cob VCB=(--)10V, f=1MHz VCE(sat)1 IC=(--)1.5A, IB=(--)30mA Base-to-Emitter Saturation Voltage VCE(sat)2 VBE(sat) IC=(--)2.5A, IB=(--)125mA IC=(--)1.5A, IB=(--)30mA Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton See specified Test Circuit. (50)30 Storage Time tstg See specified Test Circuit. (270)300 ns Fall Time tf See specified Test Circuit. (25)15 ns Collector-to-Emitter Saturation Voltage Package Dimensions unit : mm (typ) 7007B-004 200 560 VCE=(--)10V, IC=(--)500mA (350)420 MHz (30)20 pF (--140)125 (--210)190 (--)170 (--)260 (--)0.83 (--)1.2 mV mV V (--30)40 V IC=(--)1mA, RBE=∞ (--)30 V IE=(--)10μA, IC=0A (--)5 V ns Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 OUTPUT INPUT VR RB + 50Ω 100μF VBE=--5V 24Ω + 470μF VCC=12V IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed) No.6306-2/5 2SA2012 / 2SC5565 IC -- VCE --80mA --70mA --60mA --50mA --40mA A --90mA --3 --30mA --20mA --2 --10mA A 0m IB=0mA 30mA 20mA 2 10mA --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE -- V --3.5 25°C --3.0 --2.5 --2.0 °C --1.5 --0.5 0.8 1.0 IT00135 2SC5565 VCE=2V 4.5 4.0 3.5 25°C 3.0 2.5 2.0 1.5 1.0 --25°C Ta=7 5 --1.0 0.6 IC -- VBE 5.0 Collector Current, IC -- A --4.0 0.4 Collector-to-Emitter Voltage, VCE -- V 2SA2012 VCE=--2V --4.5 0.2 IT00134 IC -- VBE --5.0 IB=0mA 0 0 --1.0 0.5 --25°C 0 Collector Current, IC -- A 40mA 3 °C 0 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V --1.4 0 0.2 0.4 0.6 1.0 1.2 7 5 1.4 IT00137 hFE -- IC 1000 2SA2012 VCE=--2V 7 0.8 Base-to-Emitter Voltage, VBE -- V IT00136 hFE -- IC 1000 2SC5565 VCE=2V Ta=75°C 5 3 DC Current Gain, hFE Ta=75°C 25°C 2 --25°C 100 7 5 3 100 7 5 3 2 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 5 7 --10 IT00138 Collector Current, IC -- A 2SA2012 VCE=--10V 7 5 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A f T -- IC 1000 --25°C 25°C 2 3 5 7 10 IT00139 f T -- IC 1000 Gain-Brandwidth Product, f T -- MHz DC Current Gain, hFE 4 80mA 70mA 60mA 50mA 10 90mA 1 --1 Gain-Brandwidth Product, f T -- MHz 2SC5565 Ta=7 5 Collector Current, IC -- A 0m 0 --1 --4 IC -- VCE 5 2SA2012 Collector Current, IC -- A --5 2SC5565 VCE=10V 7 5 3 2 100 7 5 3 2 10 10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00148 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00149 No.6306-3/5 2SA2012 / 2SC5565 Cob -- VCB 5 3 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 100 7 5 3 2 10 7 5 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V --100 °C 75 25°C 5°C --2 2 --10 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 7 5 5 7 --10 IT00140 VCE(sat) -- IC --100 7 5°C =7 Ta 5 25°C C 25° 3 -- 2 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2SA2012 IC / IB=50 7 5 3 2 Ta=--25°C 7 75°C 5 25°C 3 2 --0.1 --0.01 2 3 5 2 3 5 7 1.0 2 3 5 7 10 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00144 2 3 5 IT00147 VCE(sat) -- IC 2SC5565 IC / IB=20 7 5 3 2 100 7 5 75 = Ta 3 2 °C 5 --2 25°C °C 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT00142 VCE(sat) -- IC 2SC5565 IC / IB=50 5 3 2 100 7 5 5°C =7 Ta 3 25°C 2 10 0.01 5 7 --10 IT00141 °C --25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VBE(sat) -- IC --10 --1.0 7 7 2 3 10 1000 3 2 2 Collector Current, IC -- A 2SA2012 IC / IB=50 --10 --0.01 3 7 5 0.01 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 3 5 Collector-to-Base Voltage, VCB -- V 5 7 10 IT00143 VBE(sat) -- IC 10 2SC5565 IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 = Ta 7 1000 5 7 5 100 IT00146 2SA2012 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 VCE(sat) -- IC --1000 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 3 2 5 7 0.1 3 2 2 2SC5565 f=1MHz 3 2 5 7 --0.1 Cob -- VCB 5 2SA2012 f=1MHz 5 3 2 1.0 Ta=--25°C 7 75°C 5 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00145 No.6306-4/5 2SA2012 / 2SC5565 ASO 2 2SA2012 / 2SC5565 10 1ms ms 1.0 7 5 s DC Collector Dissipation, PC -- W 3 2 s 0μ IC=5A 0μ 50 Collector Current, IC -- A ICP=8A 10 10 7 5 op era tio n 3 2 0.1 7 5 3 2 0.01 2SA2012 / 2SC5565 Tc=25°C Single pulse For PNP, minus sign is omitted 0.1 2 PC -- Ta 2.0 100ms 3 5 7 1.0 2 1.5 M 1.3 ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ✕0 .8 mm ) 0 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 5 3 IT00150 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT00151 PC -- Tc 4.0 2SA2012 / 2SC5565 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01532 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2010. Specifications and information herein are subject to change without notice. PS No.6306-5/5