SANYO CPH5520

CPH5520
Ordering number : ENA0485
SANYO Semiconductors
DATA SHEET
CPH5520
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, gate drivers.
Features
•
•
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting.
Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)80
V
Collector-to-Emitter Voltage
VCEO
(--50)80
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
(--)2
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Total Power Dissipation
PT
Junction Temperature
Tj
Storage Temperature
Tstg
(--)5
A
(--)400
mA
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.9
W
Mounted on a ceramic board (600mm2✕0.8mm)
1.2
W
150
°C
--55 to +150
°C
Marking : EW
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707EA TI IM TC-00000534 No. A0485-1/5
CPH5520
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
µA
Emitter Cutoff Current
IEBO
hFE
VEB=(--)4V, IC=0A
(--)1
µA
DC Current Gain
Gain-Bandwideth Product
fT
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
200
560
420
MHz
Cob
VCB=(--)10V, f=1MHz
(16)8
VCE(sat)
IC=(--)1A, IB=(--)50mA
IC=(--)1A, IB=(--)50mA
(--165)130
(--330)260
(--)0.9
(--)1.2
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
ton
tstg
Storage Time
Fall Time
tf
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10µA, IC=0A
See specified Test Circuit.
pF
mV
V
(--50)80
V
(--50)80
V
(--)6
V
(35)35
ns
See specified Test Circuit.
(200)330
ns
See specified Test Circuit.
(24)40
ns
Package Dimensions
Electrical Connection
5
4
5
0.15
2.9
4
3
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
2
Top view
3
0.05
1.6
2.8
0.2
0.6
unit : mm (typ)
7017A-009
2
0.95
0.4
0.9
0.2
0.6
1
1
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
SANYO : CPH5
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=25V
IC=10IB1= --10IB2=0.7A
For PNP, the polarity is reversed.
No. A0485-2/5
CPH5520
mA
mA
--60
--40
1.8
A
--20m
--1.6
--1.4
--1.2
--10mA
--8mA
--1.0
--6mA
--0.8
--4mA
Collector Current, IC -- A
--0.6
--2mA
IB=0mA
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
15mA
1.4
10mA
8mA
6mA
1.2
1.0
4mA
0.8
0.6
2mA
IB=0mA
0
0
--2.0
Collector-to-Emitter Voltage, VCE -- V
IT08923
IC -- VBE
[PNP]
--2.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
1.8
Collector-to-Emitter Voltage, VCE -- V
IT08924
IC -- VBE
[NPN]
2.00
VCE=2V
VCE= --2V
1.75
--1.50
1.50
--0.75
--25°C
°C
--1.00
25°C
--1.25
--0.50
--0.25
1.25
Ta=
75°C
Collector Current, IC -- A
--1.75
Ta=7
5
Collector Current, IC -- A
20mA
1.6
0.2
--0.2
1.00
0.75
0.50
0.25
0
0
0
--0.2
--0.4
--0.6
--0.8
0
--1.0
Base-to-Emitter Voltage, VBE -- V
IT08925
hFE -- IC
[PNP]
7
0.6
0.8
25°C
2
--25°C
1.0
IT08926
hFE -- IC
7
[NPN]
VCE=2V
5
Ta=75°C
DC Current Gain, hFE
3
100
7
5
25°C
3
--25°C
2
100
7
3
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
5
0.01
3
Gain-Bandwidth Product, f T -- MHz
100
2
3
5
Collector Current, IC -- A
7 --1.0
2
2
3
5
3
IT08929
7 1.0
2
3
IT08928
[NPN]
VCE=10V
5
2
7 --0.1
7 0.1
f T -- IC
7
3
5
5
[PNP]
5
3
3
Collector Current, IC -- A
VCE= --10V
2
2
IT08927
f T -- IC
7
7
--0.01
0.4
Base-to-Emitter Voltage, VBE -- V
Ta=75°C
2
--0.01
0.2
VCE= --2V
5
DC Current Gain, hFE
30mA
0.4
--0.4
Gain-Bandwidth Product, f T -- MHz
A
m
40
[NPN]
25°C
--25°C
Collector Current, IC -- A
--1
IC -- VCE
2.0
50m
A
mA --80m
00
--1.8
[PNP]
A
IC -- VCE
--2.0
3
2
100
7
5
3
2
10
0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 0.1
2
3
IT08930
No. A0485-3/5
CPH5520
Cob -- VCB
7
[PNP]
Cob -- VCB
5
[NPN]
f=1MHz
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5
3
2
10
7
5
3
2
10
7
5
3
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5 7
Collector-to-Base Voltage, VCB -- V
IT08931
VCE(sat) -- IC
[PNP]
5
0.1
3
5
7 1.0
2
3
5
7 10
2
3
5 7
Collector-to-Base Voltage, VCB -- V
IT08932
VCE(sat) -- IC
[NPN]
5
IC / IB=10
IC / IB=10
3
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
2
--0.1
7
3
C
5°
=7
C
Ta
5°
--2
2
°C
25
5
2
0.1
7
5
°C
75
5°C
--2
5°C
3
=
Ta
2
2
0.01
7
5
--0.01
--0.01
--1.0
3
5
7 --0.1
2
3
5
7 --1.0
2
3
0.01
3
Collector Current, IC -- A
IT08933
VCE(sat) -- IC
[PNP]
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
5
IC / IB=20
2
3
IT008934
VCE(sat) -- IC
[NPN]
IC / IB=20
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
2
3
2
--0.1
C
75°
Ta=
5°C
--2
C
25°
7
5
3
2
2
0.1
7
°C
75
C
5°
--2
°C
25
5
=
Ta
3
2
0.01
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
7
0.01
3
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
IT08935
VBE(sat) -- IC
3
2
VBE(sat) -- IC
[PNP]
3
2
--1.0
Ta= --25°C
7
75°C
25°C
5
3
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
[NPN]
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=20
2
IT08936
3
IT08937
2
1.0
Ta= --25°C
7
75°C
25°C
5
3
0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
IT08938
No. A0485-4/5
CPH5520
1ms
IC=2A
1.0
7
5
3
2
0.1
7
5
3
2
Ta=25°C
Single pulse
For PNP minus sign is omitted
Mounted on a ceramic board (600mm2✕0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Collector-to-Emitter Voltage, VCE -- V
[PNP / NPN]
Mounted on a ceramic board (600mm2✕0.8mm)
1.2
s
m
10
s
on
0m ati
10 per
o
DC
Collector Current, IC -- A
1.4
µs
100
s
2
ICP=5A
PC -- Ta
[PNP / NPN]
0µ
50
3
ASO
Collector Dissipation, PC -- W
7
5
1.0
0.9
0.8
To
t
0.6
1u
al
di
nit
ss
ip
ati
on
0.4
0.2
0
2 3
5 7
IT11358
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT11359
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0485-5/5