Ordering number : ENA1311C LE25LB1282TT Serial SPI EEPROM (SPI Bus)(128Kbit) Overview The LE25LB1282TT is a 128Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is compatible with SPI bus protocol, therefore, it is best suited for applications that require small-scale rewritable nonvolatile parameter memory. Moreover, the LE25LB1282TT has a 64 bytes page rewrite function that provides rapid data rewriting. Features • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 128Kbits (16K×8bits) : 1.8V to 3.6V : SPI Mode0, Mode3 supported : 5MHz (2.5V to 3.6V), 3MHz (1.8V to 3.6V) : Standby : 3μA (max.) : Active (Read) : 1mA (max.) : Active (Rewrite) : 3mA (max.) : 64bytes : 10ms : 106 times : 20years : Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325) Incorporates a feature to prohibit write operations under low voltage conditions. * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. 70611 SY/10511 SY/40809 SY/31809 SY JK/20080822-S00007 No.NA1311-1/14 LE25LB1282TT Package Dimensions unit : mm (typ) 3245B [LE25LB1282TT] 3.0 0.5 3.0 4.9 8 1 (0.53) 2 0.65 1.1MAX 0.125 0.08 (0.85) 0.25 SANYO : MSOP8(150mil) Packages MSOP8 (150mil) : LE25LB1282TT Pin Assignment CS 1 Pin Descriptions 8 VDD PIN.1 CS Chip select PIN.2 SO Serial data output PIN.3 WP Write protect PIN.4 VSS Ground PIN.5 SI Serial data input Serial clock SO 2 7 HOLD WP 3 6 SCK PIN.6 SCK VSS 4 5 SI PIN.7 HOLD Hold PIN.8 VDD Power supply Block Diagram XDECODER ADDRESS BUFFERS & LATCHES EEPROM Cell Array Y-DECODER I/O BUFFERS & DATA LATCHES CONTROL LOGIC SERIAL INTERFACE CS SCK SI SO WP HOLD Specifications No.NA1311-2/14 LE25LB1282TT Absolute Maximum Rating/If an electrical stress exceeding the maximum rating is applied, the device may be damaged. Parameter Symbol Conditions Ratings Storage temperature Unit -65 to +150 Supply voltage °C -0.5 to 4.6 V DC input voltage -0.5 to VDD+0.5 V Overshoot voltage (below 20ns) -1.0 to VDD+0.5 V Operating Conditions Parameter Symbol Conditions Ratings Operating temperature Operating supply voltage Unit -40 to +85 °C 1.8 to 3.6 V max Unit DC Electrical Characteristics Parameter Supply current when reading Symbol ICCR Conditions min typ CS = 0.1VDD, HOLD = WP = 0.9VDD 1 mA 0.5 mA 0.3 mA SI = 0.1VDD/0.9VDD, SO = Open Operating frequency = 5MHz, VDD = 3.6V CS = 0.1VDD, HOLD = WP = 0.9VDD SI = 0.1VDD/0.9VDD, SO = Open Operating frequency = 5MHz, VDD = 2.5V CS = 0.1VDD, HOLD = WP = 0.9VDD SI = 0.1VDD/0.9VDD, SO = Open Operating frequency = 3MHz, VDD = 1.8V Supply current when writing ICCW VDD = VDD max., VIN = 0.1VDD/0.9VDD 3 mA CMOS standby current ISB CS = VDD, VIN = VDD or VSS 3 μA 2 μA VDD = 3.6V CS = VDD, VIN = VDD or VSS VDD = 2.5V Input leakage current ILI VIN = VSS to VDD, VDD = VDD max. -2 2 μA Output leakage current ILO VIN = VSS to VDD, VDD = VDD max. -2 2 μA Input low voltage VIL VDD = VDD max. -0.3 0.3VDD V Input high voltage VIH VDD = VDD min. 0.7VDD VDD+0.3 V Output low voltage VOL1 IOL = 3.0mA, VDD = 2.5V to 3.6V 0.4 V VOL2 IOL = 0.7mA, VDD = 1.8V to 3.6V Output high voltage VOH1 IOH = -0.4mA, VDD = 2.5V to 3.6V 0.8VDD V VOH2 IOH = -0.1mA, VDD = 1.8V to 3.6V 0.8VDD V 0.2 V Capacitance at Ta = 25°C, f = 1.0MHz Parameter Symbol Conditions min typ max Unit Output pin capacitance CDQ VDQ = 0V 12 pF Input pin capacitance CIN VIN = 0V 6 pF Note : These parameters are sampled and not 100% tested. AC Electrical Characteristics Input pulse level 0.2×VDD to 0.8×VDD Input pulse rise/fall time 10ns Output detection voltage 0.5×VDD Output load 30pF No.NA1311-3/14 LE25LB1282TT AC Characteristics (at FCLK = 5MHz)/VDD = 2.5V to 3.6V Parameter Clock frequency Symbol Conditions min typ max FCLK Unit 5 MHz SCK logic high level pulse width tCLHI 90 SCK logic low level pulse width tCLLO 90 Input signal rise/fall time tRF CS setup time tCSS 90 ns SCK setup time tCLS 90 ns Data setup time tDS 20 ns Data hold time tDH 30 ns CS hold time tCSH 90 ns SCK hold time tCLH 90 ns CS standby pulse width tCPH 90 ns CS output high impedance time tCHZ SCK output data time tV Output data hold time tHO ns ns 1 us 150 ns 80 ns 0 ns WP setup time tWPS 30 ns WP hold time tWPH 30 ns HOLD setup time tHS 30 ns HOLD hold time tHH 30 HOLD output low impedance time tHLz 50 ns HOLD output high impedance time tHHz 100 ns Write cycle time tWC 10 ms SCK output low impedance time tCLZ ns 0 ns AC Characteristics (at FCLK = 3MHz)/VDD = 1.8V to 3.6V Parameter Clock frequency Symbol Conditions min typ FCLK max Unit 3 SCK logic high level pulse width tCLHI 120 SCK logic low level pulse width tCLLO 120 Input signal rise/fall time tRF MHz ns ns 1 us CS setup time tCSS 100 ns SCK setup time tCLS 100 ns Data setup time tDS 30 ns Data hold time tDH 50 ns CS hold time tCSH 100 ns SCK hold time tCLH 150 ns CS standby pulse width tCPH 120 ns CS output high impedance time tCHZ 200 ns SCK output data time tV 150 ns Output data hold time tHO 0 ns WP setup time tWPS 30 ns WP hold time tWPH 30 ns HOLD setup time tHS 30 ns HOLD hold time tHH 30 HOLD output low impedance time tHLz 120 ns HOLD output high impedance time tHHz 120 ns Write cycle time tWC 10 ms SCK output low impedance time tCLZ 0 ns ns No.NA1311-4/14 LE25LB1282TT Table 1 Command Settings Command 1st bus 2nd bus 3rd bus 4th bus 5th bus 6th bus nth bus cycle cycle cycle cycle cycle cycle cycle PD *1 PD *1 PD *1 PD *1 Write enable 06h (WREN) Write disable 04h (WRDI) Status register read 05h (RDSR) Status register write (WRSR) Read (READ) Write (WRITE) 01h DATA 03h A15-A8 A7-A0 02h A15-A8 A7-A0 Explanatory notes for Table 1 The “h” following each code indicates that the number given is in hexadecimal notation. Addresses A15 and A14 for all commands are “don’t care.” *1: “PD” stands for page program data. Any amount of data from 1 to 64 bytes is input. Figure 2 Serial Input Timing (SPI Mode 0) tCPH CS tCLS tCSS tCLHI tCLLO tCSH tCLH SCK tDS SI tDH DATA VALID High Impedance SO High Impedance (SPI Mode 3) tCPH CS tCLS tCSS tCLLO tCLHI tCSH tCLH SCK tDS SI SO tDH DATA VALID High Impedance High Impedance No.NA1311-5/14 LE25LB1282TT Figure 3 Serial Output Timing (SPI Mode 0) CS SCK tCLZ tHO tCHZ DATA VALID SO tV SI (SPI Mode 3) CS SCK tCLZ SO tHO tCHZ DATA VALID tV SI No.NA1311-6/14 LE25LB1282TT Description of Commands and Their Operations “Table 1 Command Settings” provides a list and overview of the commands. A detailed description of the functions and operations corresponding to each command is presented below. 1. Read (READ) Consisting of the first through third bus cycles, the read command inputs the 16-bit addresses following (03h), and the data in the designated addresses is output synchronized to SCK. The data is output from SO on the falling edge of third bus cycle bit0 as a reference. “Figure 4 READ” shows the timing waveforms. When SCK is input continuously after the read command has been input and the data in the designated addresses has been output, the address is automatically incremented inside the device while SCK is being input, and the corresponding data is output in sequence. If the SCK input is continued after the internal address arrives at the highest address, the internal address returns to the lowest address (0000h), and data output is continued. By setting the logic level of CS to high, the device is deselected, and the read cycle ends. While the device is deselected, the output pin SO is in a high-impedance state. Figure 4 READ CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 25 26 27 28 29 30 31 Mode0 8CLK SI 03h Add. Add. (00000011) (A15-A8) (A7-A0) High Impedance SO 7 6 5 4 3 2 1 0 7 Data Out(N) Data Out(N+1) • Addresses A15 and A14 are “don’t care.” • In synchronization with the rising edges of 0 to 23 clock signals, the command is identified and the addresses are taken in through SI. • In synchronization with the falling edges of 23 clock signal or later, the data is output to SO. No.NA1311-7/14 LE25LB1282TT 2. Status Registers The status registers read the operating and setting statuses inside the device from outside (status register read) and set the protect information (status register write). There are 8 bits in total, and “Table 2 Status Registers” gives the significance of each bit. Table 2 Status Registers Bit Name Logic Function Bit0 RDY 0 Ready 1 Busy (in write operation) Bit1 WEN 0 Write disabled 1 Write enabled Bit2 BP0 0 Bit3 BP1 Power-on time Information 0 0 Nonvolatile 1 Block protect information 0 See status register description on BP0 and BP1 information Nonvolatile information 1 Bit4 × 0 Reserved bit 0 Bit5 × 0 Reserved bit 0 Bit6 × 0 Reserved bit 0 Bit7 SRWP 0 Status register write enabled Nonvolatile 1 Status register write disabled information 2-1. Status Register Read (RDSR) The contents of the status registers can be read using the status register read command. This command can be executed even during write operation. “Figure 5 Status Register READ” shows the timing waveforms of status register read. Consisting only of the first bus cycle, the status register command outputs the contents of the status registers synchronized to the falling edge of the clock (SCK) with which the eighth bit of (05h) has been input. In terms of the output sequence, SRWP (bit7) is the first to be output, and each time one clock is input, all the other bits up to RDY (bit0) are output in sequence, synchronized to the falling clock edge. If the clock input is continued after RDY (bit0) has been output, the data is output by returning to the bit (SRWP) that was first output, after which the output is repeated as long as the clock input is continued. The data can be read by the status register read command at any time. Figure 5 Status Register Read CS Mode3 0 1 2 3 4 5 SCK 6 7 8 9 10 11 12 13 14 15 Mode0 8CLK SI SO 05h (00000101) Hight Impedance 7 6 5 4 3 2 1 0 7 Status Register Out No.NA1311-8/14 LE25LB1282TT 2-2. Status Register Write (WRSR) The information in status registers BP0, BP1, and SRWP can be rewritten using the status register write command. RDY, WEN, bit4, bit5, and bit6 are read-only bits and cannot be rewritten. The information in bits BP0, BP1, and SRWP is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at power-down. “Figure 6 Status Register Write” shows the timing waveforms of status register write, and Figure 11 shows a status register write flowchart. Consisting of the first and second bus cycles, the status register write command initiates the internal write operation at the rising CS edge after the data has been input following (01h). By the operation of this command, the information in bits BP0, BP1, and SRWP can be rewritten. Since bits RDY (bit0), WEN (bit1), bit4, bit5, and bit6 of the status register cannot be written, no problem will arise if an attempt is made to set them to any value when rewriting the status register. Status register write ends can be detected by RDY of status register read. Information in the status register can be rewritten 1,000 times (min.). To initiate status register write, the logic level of the WP pin must be set high and the status register WEN must be set to “1”. Figure 6 Status Register Write Self-timed Write Cycle tSRW CS tWPS tWPH WP Mode3 SCK 0 1 2 3 4 5 6 7 8 15 Mode0 8CLK SI SO 01h (00000001) DATA Hight Impedance 2-3. Contents of Each Status Register RDY (bit0) Ready/Busy detection The RDY register is for detecting the write end. When it is “1”, the device is in a busy state, and when it is “0”, it means that the write operation is completed. WEN (bit1) Write enable The WEN register is for detecting whether the device can perform write operations. If it is set to “0”, the device will not perform the write operation even if the write command is input. If it is set to “1”, the device can perform write operation in any area that is not block-protected. WEN can be controlled using the write enable and write disable commands. By inputting the write enable command (06h), WEN can be set to “1”, and by inputting the write disable command (04h), it can be set to “0”. In the following states, WEN is automatically set to “0” in order to protect against unintentional writing. • At power-on • Upon completion of write • Upon completion of status register write ∗ If a write operation has not been performed inside the device because, for instance, the command input for any of the write operations has failed or a write operation has been performed for a protected address, WEN will retain the status established prior to the issue of the command concerned. Furthermore, its state will not be changed by a read operation. No.NA1311-9/14 LE25LB1282TT BP0, BP1 (bits2, 3) Block Protect Settings Block protect BP0 and BP1 are status register bits that can be rewritten, and the memory space to be protected can be set depending on these bits. For the setting conditions, refer to “Table 3 Protect Level Setting Conditions.” Table 3 Protect Level Setting Conditions Status Register Bits Protection Block (Level) Protected Area BP1 BP0 0 (Whole area unprotected) 0 0 None 1 (Upper 1/4 area protected) 0 1 3000h to 3FFFh 2 (Upper 1/2 area protected) 1 0 2000h to 3FFFh 3 (Whole area protected) 1 1 0000h to 3FFFh SRWP (bit7) Status Register Write Protect Settings Status register write protect SRWP is the bit for protecting the status registers, and its information can be rewritten. When SRWP is “1” and the logic level of the WP pin is low, the status register write command is ignored, and status registers BP0, BP1, BP2, and SRWP are protected. When the logic level of the WP pin is high, the status registers are not protected regardless of the SRWP state. The SRWP setting conditions are shown in “Table 4 SRWP Setting Conditions.” Table 4 SRWP Setting Conditions WP Pin SRWP 1 0 0 0 1 1 0 1 Mode Software protected (SPM) Hardware protected (HPM) Status Register Protected Area Unprotected Area Unprotected Protected Unprotected Protected Protected Unprotected Bit4, bit5, and bit6 are reserved bits, and have no significance. 3. Write Enable (WREN) Before performing any of the operations listed below, the device must be placed in the write enable state. Operation is the same as for setting status register WEN to “1”, and the state is enabled by inputting the write enable command. “Figure 7 Write Enable” shows the timing waveforms when the write enable operation is performed. The write enable command consists only of the first bus cycle, and it is initiated by inputting (06h). • Write (WRITE) • Status register write (WRSR) 4. Write Disable (WRDI) The write disable command sets status register WEN to “0” to prohibit unintentional writing. “Figure 8 Write Disable” shows the timing waveforms. The write disable command consists only of the first bus cycle, and it is initiated by inputting (04h). The write disable state (WEN “0”) is exited by setting WEN to “1” using the write enable command (06h). Figure 7 Write Enable Figure 8 Write Disable CS CS Mode3 SCK Mode3 0 1 2 3 4 5 6 7 SCK Mode0 8CLK SI SO 06h (00000110) High Impedance 0 1 2 3 4 5 6 7 Mode0 8CLK SI SO 04h (00000100) High Impedance No.NA1311-10/14 LE25LB1282TT 5. Write (WRITE) The LE25LB1282TT enables pages with up to 64bytes to be written. Any number of bytes from 1 to 64bytes can be written within the same sector page (page addresses : A15 to A6). “Figure 9 Write” shows the write timing waveforms, and Figure 12 shows a write flowchart. After the falling CS edge, the command (02H) is input followed by the 16-bit addresses (Add). The write data is then loaded until the rising CS edge, and the internal addresses (A5 to A0) are incremented (Add+1) every time the data is loaded in 1-byte increments. The data loading continues until the rising CS edge. If the data loaded has exceeded 64bytes, the 64bytes loaded last are written. The write data must be loaded in 1-byte increments, and the write operation is not performed at the rising CS edge occurring at any other timing. The write time is 10ms (max.) when 64bytes (1page) are written at one time. Figure 9 Write Self-timed Write Cycle tWC CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 535 Mode0 8CLK SI 02h Add. Add. PD PD PD PD (00000010) (A15-A8) (A7-A0) (N) (N+1) (N+2) (N+63) High Impedance SO • Addresses A15 and A14 are “don’t care.” 6. Hold Function Using HOLD pin, the hold function suspends serial communication (it places it in the hold status). “Figure 10 HOLD” shows the timing waveforms. The device is placed in the hold status at the falling HOLD edge while the logic level of SCK is low, and it exits from the hold status at the rising HOLD edge. When the logic level of SCK is high, HOLD must not rise or fall. The hold function takes effect when the logic of CS is low, and the hold status is exited and serial communication is reset at the rising CS edge. In the hold status, the SO output is in the high-impedance state, and SI and SCK are “don’t care.” Figure 10 HOLD CS Active HOLD Active tHS tHS SCK tHH tHH HOLD tHHZ SO tHLZ High Impedance No.NA1311-11/14 LE25LB1282TT 7. Hardware Data Protection In order to protect against unintentional writing at power-on, the LE25LB1282TT incorporates a power-on reset function. 8. Software Data Protection This product eliminates the possibility of unintentional operations by not recognizing commands under the following conditions. • When a write command is input and the rising CS edge timing is not in a bus cycle (8CLK units of SCK). • When the write data is not in 1-byte increments. • When the status register write command is input for 2bus cycles or more. 9. Power-on In order to protect against unintentional writing, CS must be kept at VDD at power-on. After power-on, the supply voltage has stabilized at 1.8V or higher, wait for 10μs (tPU_READ) before inputting the command to start a read operation. Similarly, wait for 10ms (tPU_WRITE) after the supply voltage has stabilized at 1.8V or higher before inputting the command to start a write operation. 10. Decoupling Capacitor A0.1μF ceramic capacitor must be provided to each device and connected between VDD and VSS in order to ensure that the device will operate stably. No.NA1311-12/14 LE25LB1282TT Figure 11 Status Register Write Flowchart Figure 12 Write Flowchart Status register write Write Start Start 06h 01h Set write enable command 06h Set write enable command 02h Set status register write command Address 1 Data Set write command Address 2 Program start on rising edge of CS 05h Data 0 Set status register read command Data 1 Data n NO Bit 0= “0” ? Write start on rising edge of CS YES End of status register write *Automatically placed in write disabled state at the end of the status register write. Set status register read command 05h NO Bit 0= “0” ? YES *Automatically placed in write disabled state at the end of the write. End of write No.NA1311-13/14 Monolithic Linear IC Amplifi er LE25LB1282TT Application Note 1) Precautions at Power-on In order to protect against unintentional writing, the LE25LB1282TT incorporates a power-on rest circuit. The following conditions must be met in order to ensure that the power-on reset circuit will operate stably. No guarantees are given for data in the event of an instantaneous power failure occurring during the write operation. Symbol VDD = 1.8 to 3.6V Item min tRISE Power rise time tOFF Power off time Vbot Power bottom voltage typ Unit max 100 ms 10 ms 0.2 V tRISE VDD tOFF Vbot 0V Note: 1). The CS pin must be set high. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2011. Specifications and information herein are subject to change without notice. No.NA1311-14/14