Ordering number : ENA2096 LE25S40MB CMOS IC 4M-bit (512K×8) Serial Flash Memory Overview The LE25S40MB is a SPI bus flash memory device with a 4M bit (512K × 8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S40MB is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S40MB also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity. Features • Read/write operations enabled by single 1.8V power supply: 1.65 to 1.95V supply voltage range • Operating frequency : 40MHz • Temperature range : -40 to 85°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 4K bytes/small sector, 64K bytes/sector • Small sector erase, sector erase, chip erase functions • Page program function (256 bytes / page) • Block protect function • Highly reliable read/write Number of rewrite times : 100,000 times Small sector erase time : 40ms (typ.), 150ms (max.) Sector erase time : 80ms (typ.), 250ms (max.) Chip erase time : 300ms (typ.), 3.0s (max.) Page program time : 6.0ms/256 bytes (typ.), 8.0ms/256 bytes (max.) • Status functions : Ready/busy information, protect information • Data retention period : 20 years • Package : SOP8K (200mil) * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. 72512 SY 20120426-S00005 No.A2096-1/22 LE25S40MB Package Dimensions unit : mm (typ) 3398 4.9 0.7 3.9 6.0 8 1 2 1.27 (0.55) 0.2 0.15 (1.5) 1.75 MAX 0.4 SANYO : SOP8K(200mil) Figure 1 Pin Assignments CS 1 8 VDD SO 2 7 HOLD WP 3 6 SCK VSS 4 5 SI Top view No.A2096-2/22 LE25S40MB Figure 2 Block Diagram 4M Bit Flash EEPROM Cell Array XDECODER ADDRESS BUFFERS & LATCHES Y-DECODER I/O BUFFERS & DATA LATCHES CONTROL LOGIC SERIAL INTERFACE CS SCK SI SO WP HOLD Table 1 Pin Description Symbol SCK Pin Name Serial clock Description This pin controls the data input/output timing. The input data and addresses are latched synchronized to the rising edge of the serial clock, and the data is output synchronized to the falling edge of the serial clock. SI Serial data input The data and addresses are input from this pin, and latched internally synchronized to the rising edge of the serial clock. SO Serial data output CS Chip select The data stored inside the device is output from this pin synchronized to the falling edge of the serial clock. The device becomes active when the logic level of this pin is low; it is deselected and placed in standby status when the logic level of the pin is high. WP Write protect The status register write protect (SRWP) takes effect when the logic level of this pin is low. HOLD Hold Serial communication is suspended when the logic level of this pin is low. VDD Power supply This pin supplies the 1.65 to 1.95V supply voltage. VSS Ground This pin supplies the 0V supply voltage. No.A2096-3/22 LE25S40MB Device Operation The read, erase, program and other required functions of the device are executed through the command registers. The serial I/O corrugate is shown in Figure 3 and the command list is shown in Table 2. At the falling CS edge the device is selected, and serial input is enabled for the commands, addresses, etc. These inputs are normalized in 8 bit units and taken into the device interior in synchronization with the rising edge of SCK, which causes the device to execute operation according to the command that is input. The LE25S40MB supports both serial interface SPI mode 0 and SPI mode 3. At the falling CS edge, SPI mode 0 is automatically selected if the logic level of SCK is low, and SPI mode 3 is automatically selected if the logic level of SCK is high. Figure 3 I/O waveforms CS Mode3 SCK Mode0 8CLK SI 1st bus Nth bus 2nd bus LSB (Bit0) MSB (Bit7) High Impedance DATA DATA SO Table 2 Command Settings Command Read Small sector erase Sector erase Chip erase 1st bus cycle 2nd bus cycle 3rd bus cycle 4th bus cycle 5th bus cycle 6th bus cycle 03h A23-A16 A15-A8 A7-A0 RD *1 RD *1 Nth bus cycle RD *1 0Bh A23-A16 A15-A8 A7-A0 X RD *1 RD *1 20h / D7h A23-A16 A15-A8 A7-A0 D8h A23-A16 A15-A8 A7-A0 A23-A16 A15-A8 A7-A0 PD *2 PD *2 PD *2 X X 60h / C7h Page program 02h Write enable 06h Write disable 04h Power down B9h Status register read 05h Status register write 01h JEDEC ID read 9Fh ID read ABh power down B9h Exit power down mode ABh DATA X Explanatory notes for Table 2 "X" signifies "don't care" (that is to say, any value may be input). The "h" following each code indicates that the number given is in hexadecimal notation. Addresses A23 to A19 for all commands are "Don't care". *1: "RD" stands for read data. *2: "PD" stands for page program data. No.A2096-4/22 LE25S40MB Table 3 Command Settings 4M Bit sector(64KB) 7 6 5 4 3 2 1 0 small sector 127 to 112 111 to 96 95 to 80 79 to 64 63 to 48 47 to 32 31 to 16 15 to 2 1 0 address space(A23 to A0) 07F000h 07FFFFh 070000h 06F000h 070FFFh 06FFFFh 060000h 05F000h 060FFFh 05FFFFh 050000h 04F000h 050FFFh 04FFFFh 040000h 03F000h 040FFFh 03FFFFh 030000h 02F000h 030FFFh 02FFFFh 020000h 01F000h 020FFFh 01FFFFh 010000h 00F000h 010FFFh 00FFFFh 002000h 001000h 000000h 002FFFh 001FFFh 000FFFh No.A2096-5/22 LE25S40MB Description of Commands and Their Operations A detailed description of the functions and operations corresponding to each command is presented below. 1. Standard SPI read There are two read commands, the standard SPI read command and High-speed read command. 1-1. Read command Consisting of the first through fourth bus cycles, the 4 bus cycle read command inputs the 24-bit addresses following (03h). The data is output from SO on the falling clock edge of fourth bus cycle bit 0 as a reference. "Figure 4-a Read" shows the timing waveforms. Figure 4-a Read CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 31 32 23 24 39 40 47 Mode0 8CLK SI 03h Add. Add. Add. N High Impedance SO DATA MSB N+1 N+2 DATA DATA MSB MSB 1-2. High-speed Read command Consisting of the first through fifth bus cycles, the High-speed read command inputs the 24-bit addresses and 8 dummy bits following (0Bh). The data is output from SO using the falling clock edge of fifth bus cycle bit 0 as a reference. "Figure 4-b High-speed Read" shows the timing waveforms. Figure 4-b High-speed Read CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 Mode0 8CLK SI 0Bh Add. Add. Add. X MSB SO High Impedance N N+1 N+2 DATA DATA DATA MSB MSB MSB When SCK is input continuously after the read command has been input and the data in the designated addresses has been output, the address is automatically incremented inside the device while SCK is being input, and the corresponding data is output in sequence. If the SCK input is continued after the internal address arrives at the highest address (7FFFFh), the internal address returns to the lowest address (00000h), and data output is continued. By setting the logic level of CS to high, the device is deselected, and the read cycle ends. While the device is deselected, the output pin SO is in a high-impedance state. No.A2096-6/22 LE25S40MB 2. Status Registers The status registers hold the operating and setting statuses inside the device, and this information can be read (status register read) and the protect information can be rewritten (status register write). There are 8 bits in total, and "Table 4 Status registers" gives the significance of each bit. Table 4 Status Registers Bit Bit0 Bit1 Name RDY Logic Function 0 Ready Power-on Time Information 1 Erase/Program 0 Write disabled 1 Write enabled 0 WEN 0 0 Bit2 Nonvolatile information BP0 1 Bit3 0 Block protect information 1 Protecting area switch BP1 Nonvolatile information 0 Bit4 BP2 Nonvolatile information 1 Bit5 0 Block protect 1 Upper side/Lower side switch 0 Status register write enabled 1 Status register write disabled TB Bit6 Bit7 Reserved bits SRWP Nonvolatile information 0 Nonvolatile information 2-1. Status register read The contents of the status registers can be read using the status register read command. This command can be executed even during the following operations. • Small sector erase, sector erase, chip erase • Page program • Status register write "Figure 5 Status Register Read" shows the timing waveforms of status register read. Consisting only of the first bus cycle, the status register command outputs the contents of the status registers synchronized to the falling edge of the clock (SCK) with which the eighth bit of (05h) has been input. In terms of the output sequence, SRWP (bit 7) is the first to be output, and each time one clock is input, all the other bits up to RDY (bit 0) are output in sequence, synchronized to the falling clock edge. If the clock input is continued after RDY (bit 0) has been output, the data is output by returning to the bit (SRWP) that was first output, after which the output is repeated for as long as the clock input is continued. The data can be read by the status register read command at any time (even during a program or erase cycle). Figure 5 Status Register Read CS Mode 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 Mode 0 8CLK SI 05h MSB SO High Impedance DATA MSB DATA MSB DATA MSB No.A2096-7/22 LE25S40MB 2-2. Status register write The information in status registers BP0, BP1, BP2, TB and SRWP can be rewritten using the status register write command. RDY, WEN and bit 6 are read-only bits and cannot be rewritten. The information in bits BP0, BP1, BP2, TB and SRWP is stored in the non-volatile memory, and when it is written in these bits, the contents are retained even at power-down. "Figure 6 Status Register Write" shows the timing waveforms of status register write, and Figure 19 shows a status register write flowchart. Consisting of the first and second bus cycles, the status register write command initiates the internal write operation at the rising CS edge after the data has been input following (01h). Erase and program are performed automatically inside the device by status register write so that erasing or other processing is unnecessary before executing the command. By the operation of this command, the information in bits BP0, BP1, BP2, TB and SRWP can be rewritten. Since bits RDY (bit 0), WEN (bit 1) and bit 6 of the status register cannot be written, no problem will arise if an attempt is made to set them to any value when rewriting the status register. Status register write ends can be detected by RDY of status register read. To initiate status register write, the logic level of the WP pin must be set high and status register WEN must be set to "1". Figure 6 Status Register Write Self-timed Write Cycle tSRW CS tWPH tWPS WP Mode3 SCK 0 1 2 3 4 5 6 7 8 15 Mode0 8CLK SI 01h DATA MSB SO High Impedance 2-3. Contents of each status register RDY (Bit 0) The RDY register is for detecting the write (program, erase and status register write) end. When it is "1", the device is in a busy state, and when it is "0", it means that write is completed. WEN (bit 1) The WEN register is for detecting whether the device can perform write operations. If it is set to "0", the device will not perform the write operation even if the write command is input. If it is set to "1", the device can perform write operations in any area that is not block-protected. WEN can be controlled using the write enable and write disable commands. By inputting the write enable command (06h), WEN can be set to "1"; by inputting the write disable command (04h), it can be set to "0." In the following states, WEN is automatically set to "0" in order to protect against unintentional writing. • At power-on • Upon completion of small sector erase, sector erase or chip erase • Upon completion of page program • Upon completion of status register write * If a write operation has not been performed inside the LE25S40MB because, for instance, the command input for any of the write operations (small sector erase, sector erase, chip erase, page program, or status register write) has failed or a write operation has been performed for a protected address, WEN will retain the status established prior to the issue of the command concerned. Furthermore, its state will not be changed by a read operation. No.A2096-8/22 LE25S40MB BP0, BP1, BP2, TB (Bits 2, 3, 4, 5) Block protect BP0, BP1, BP2 and TB are status register bits that can be rewritten, and the memory space to be protected can be set depending on these bits. For the setting conditions, refer to "Table 5 Protect level setting conditions". BP0, BP1, and BP2 are used to select the protected area and TB to allocate the protected area to the higher-order address area or lower-order address area. Table 5 Protect Level Setting Conditions Status Register Bits Protect Level Protected Area TB BP2 BP1 BP0 0 (Whole area unprotected) X 0 0 0 None T1 (Upper side 1/8 protected) 0 0 0 1 07FFFFh to 070000h T2 (Upper side 1/4 protected) 0 0 1 0 07FFFFh to 060000h T3 (Upper side 1/2 protected) 0 0 1 1 07FFFFh to 040000h B1 (Lower side 1/8 protected) 1 1 0 1 00FFFFh to 000000h B2 (Lower side 1/4 protected) 1 1 1 0 01FFFFh to 000000h B3 (Lower side 1/2 protected) 1 1 1 1 03FFFFh to 000000h 4 (Whole area protected) X 1 X X 07FFFFh to 000000h * Chip erase is enabled only when the protect level is 0. SRWP (bit 7) Status register write protect SRWP is the bit for protecting the status registers, and its information can be rewritten. When SRWP is "1" and the logic level of the WP pin is low, the status register write command is ignored, and status registers BP0, BP1, BP2, TB and SRWP are protected. When the logic level of the WP pin is high, the status registers are not protected regardless of the SRWP state. The SRWP setting conditions are shown in "Table 6 SRWP setting conditions". Table 6 SRWP Setting Conditions WP Pin SRWP Status Register Protect State 0 Unprotected 1 Protected 0 Unprotected 1 Unprotected 0 1 Bit 6 are reserved bits, and have no significance. 3. Write Enable Before performing any of the operations listed below, the device must be placed in the write enable state. Operation is the same as for setting status register WEN to "1", and the state is enabled by inputting the write enable command. "Figure 7 Write Enable" shows the timing waveforms when the write enable operation is performed. The write enable command consists only of the first bus cycle, and it is initiated by inputting (06h). • Small sector erase, sector erase, chip erase • Page program • Status register write No.A2096-9/22 LE25S40MB 4. Write Disable The write disable command sets status register WEN to "0" to prohibit unintentional writing. "Figure 8 Write Disable" shows the timing waveforms. The write disable command consists only of the first bus cycle, and it is initiated by inputting (04h). The write disable state (WEN "0") is exited by setting WEN to "1" using the write enable command (06h). Figure 7 Write Enable Figure 8 Write Disable CS CS Mode3 SCK Mode3 0 1 2 3 4 5 6 7 SCK Mode0 0 1 2 3 4 5 6 7 Mode0 8CLK SI 8CLK SI 06h 04h MSB MSB High Impedance SO High Impedance SO 5. Power-down The power-down command sets all the commands, with the exception of the silicon ID read command and the command to exit from power-down, to the acceptance prohibited state (power-down). "Figure 9 Power-down" shows the timing waveforms. The power-down command consists only of the first bus cycle, and it is initiated by inputting (B9h). However, a power-down command issued during an internal write operation will be ignored. The power-down state is exited using the power-down exit command (power-down is exited also when one bus cycle or more of the silicon ID read command (ABh) has been input). "Figure 10 Exiting from Power-down" shows the timing waveforms of the power-down exit command. Figure 9 Power-down Figure 10 Exiting from Power-down Power down mode Power down mode CS CS tPRB tDP Mode3 SCK Mode3 0 1 2 3 4 5 6 7 SCK Mode0 0 1 2 3 4 5 6 7 Mode0 8CLK SI B9h 8CLK SI MSB MSB SO High Impedance ABh SO High Impedance No.A2096-10/22 LE25S40MB 6. Small Sector Erase Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of 4Kbytes. "Figure 11 Small Sector Erase" shows the timing waveforms, and Figure 20 shows a small sector erase flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (20h) or (D7h). Addresses A18 to A12 are valid, and Addresses A23 to A19 are "don't care". After the command has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY. Figure 11 Small Sector Erase Self-timed Erase Cycle tSSE CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 Mode0 8CLK SI 20h / D7h Add. Add. Add. MSB High Impedance SO 7. Sector Erase Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes. "Figure 12 Sector Erase" shows the timing waveforms, and Figure 20 shows a sector erase flowchart. The sector erase command consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (D8h). Addresses A18 to A16 are valid, and Addresses A23 to A19 are "don't care". After the command has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY. Figure 12 Sector Erase Self-timed Erase Cycle tSE CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 Mode0 8CLK SI D8h Add. Add. Add. MSB SO High Impedance No.A2096-11/22 LE25S40MB 8. Chip Erase Chip erase is an operation that sets the memory cell data in all the sectors to "1". "Figure 13 Chip Erase" shows the timing waveforms, and Figure 20 shows a chip erase flowchart. The chip erase command consists only of the first bus cycle, and it is initiated by inputting (60h) or (C7h). After the command has been input, the internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY. Figure 13 Chip Erase Self-timed Erase Cycle tCHE CS Mode3 SCK 0 1 2 3 4 5 6 7 Mode0 8CLK SI 60h / C7h MSB High Impedance SO 9. Page Program Page program is an operation that programs any number of bytes from 1 to 256 bytes within the same sector page (page addresses: A18 to A8). Before initiating page program, the data on the page concerned must be erased using small sector erase, sector erase, or chip erase. "Figure 14 Page Program" shows the page program timing waveforms, and Figure 21 shows a page program flowchart. After the falling CS, edge, the command (02H) is input followed by the 24bit addresses. Addresses A18 to A0 are valid. The program data is then loaded at each rising clock edge until the rising CS edge, and data loading is continued until the rising CS edge. If the data loaded has exceeded 256 bytes, the 256 bytes loaded last are programmed. The program data must be loaded in 1-byte increments, and the program operation is not performed at the rising CS edge occurring at any other timing. Figure 14 Page Program Self-timed Program Cycle tPP CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 2079 Mode0 8CLK SI 02h Add. Add. Add. PD PD PD MSB SO High Impedance No.A2096-12/22 LE25S40MB 10. Silicon ID Read ID read is an operation that reads the manufacturer code and device ID information. The silicon ID read command is not accepted during writing. There are two methods of reading the silicon ID, each of which is assigned a device ID. In the first method, the read command sequence consists only of the first bus cycle in which (9Fh) is input. In the subsequent bus cycles, the manufacturer code 62h which is assigned by JEDEC, 2-byte device ID code (memory type, memory capacity), and reserved code are output sequentially. The 4-byte code is output repeatedly as long as clock inputs are present, "Table 7-1 JEDEC ID code " lists the silicon ID codes and "Figure 15-a JEDEC ID read" shows the JEDEC ID read timing waveforms. The second method involves inputting the ID read command. This command consists of the first through fourth bus cycles, and the one bite silicon ID can be read when 24 dummy bits are input after (ABh). "Table 7-2 ID code " lists the silicon ID codes and "Figure 15-b ID read" shows the ID read timing waveforms. If the SCK input persists after a device code is read, that device code continues to be output. The data output is transmitted starting at the falling edge of the clock for bit 0 in the fourth bus cycle and the silicon ID read sequence is finished by setting CS high. Table 7-1 JEDEC ID code Table 7-2 ID code Output code 1 byte device ID Memory type 16h Memory capacity code 13h(4M Bit) 1 00h 2 byte device ID Device code Output Code 62h Manufacturer code 3E (LE25S40MB) Figure 15-a JEDEC ID Read CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 31 32 23 24 39 Mode0 8CL SI SO 9Fh High Impedance 62h MSB 16h MSB 00h 13h MSB MSB 62h MSB Figure 15-b ID Read CS Mode3 SCK 0 1 2 3 4 5 6 7 8 15 16 31 32 23 24 39 Mode0 8CL SI SO ABh X High Impedance X X 3Eh MSB 3Eh MSB No.A2096-13/22 LE25S40MB 11. Hold Function Using the HOLD pin, the hold function suspends serial communication (it places it in the hold status). "Figure16 HOLD" shows the timing waveforms. The device is placed in the hold status at the falling HOLD edge while the logic level of SCK is low, and it exits from the hold status at the rising HOLD edge. When the logic level of SCK is high, HOLD must not rise or fall. The hold function takes effect when the logic level of CS is low, the hold status is exited and serial communication is reset at the rising CS edge. In the hold status, the SO output is in the high-impedance state, and SI and SCK are "don't care". Figure 16 HOLD Active CS Active HOLD tHS tHS SCK tHH tHH HOLD tHLZ tHHZ High Impedance SO 12. Power-on In order to protect against unintentional writing, CS must be within at VDD-0.3 to VDD+0.3 on power-on. After poweron, the supply voltage has stabilized at VDD min. or higher, waits for tPU before inputting the command to start a device operation. The device is in the standby state and not in the power-down state after power is turned on. To put the device into the power-down state, it is necessary to enter a power-down command. Figure 17 Power-on Timing CS = VDD level VDD Full Access Allowed VDD(Max) VDD(Min) tPU 0V No.A2096-14/22 LE25S40MB 13. Hardware Data Protection LE25S40MB incorporates a power-on reset function. The following conditions must be met in order to ensure that the power reset circuit will operate stably. No guarantees are given for data in the event of an instantaneous power failure occurring during the writing period. Figure 18 Power-down Timing VDD VDD(Max) VDD(Min) tPD 0V vBOT Power-on timing Parameter power-on to operation time Symbol power-down time tPU tPD power-down voltage tBOT spec min max unit 100 µs 10 ms 0.2 V 14. Software Data Protection The LE25S40MB eliminates the possibility of unintentional operations by not recognizing commands under the following conditions. • When a write command is input and the rising CS edge timing is not in a bus cycle (8 CLK units of SCK) • When the page program data is not in 1-byte increments • When the status register write command is input for 2 bus cycles or more 15. Decoupling Capacitor A 0.1μF ceramic capacitor must be provided to each device and connected between VDD and VSS in order to ensure that the device will operate stably. No.A2096-15/22 LE25S40MB Specifications Absolute Maximum Ratings Parameter Symbol Maximum supply voltage Conditions Ratings unit VDDmax With respect to VSS -0.5 to +2.4 V DC voltage (all pins) VIN/VOUT With respect to VSS -0.5 to VDD+0.5 V Storage temperature Tstg -55 to +150 °C Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage VDD 1.65 to 1.95 V Operating ambient temperature Topr -40 to +85 °C Allowable DC Operating Conditions Ratings Parameter Symbol Conditions unit min Read mode operating current ICCR typ max SCK=0.1VDD/0.9VDD, HOLD=WP=0.9VDD, 6 mA 8 mA 15 mA 50 μA 10 μA SO=open,25MHz SCK=0.1VDD/0.9VDD, HOLD=WP=0.9VDD, SO=open,40MHz Write mode operating current ICCW tSSE= tSE= tCHE=typ.,tPP=max CMOS standby current ISB Power-down standby current IDSB CS=VDD, HOLD=WP=VDD, SI=VSS/VDD, SO=open, CS=VDD, HOLD=WP=VDD, (erase+page program) SI=VSS/VDD, SO=open, Input leakage current ILI 2 μA Output leakage current ILO 2 μA Input low voltage VIL -0.3 0.3VDD V Input high voltage VIH 0.7VDD VDD+0.3 V Output low voltage VOL Output high voltage VOH IOL=100μA, VDD=VDD min 0.2 IOL=1.6mA, VDD=VDD min 0.4 IOH=-100μA, VDD=VDD min V VCC-0.2 V Data hold, Rewriting frequency Parameter condition min Program/Erase Rewriting frequency Status resister write Data hold max unit 100,000 times/ 1,000 Sector 20 year Pin Capacitance at Ta=25°C, f=1MHz Ratings Parameter Symbol Conditions unit max Output pin capacitance CSO VSO=0V 12 pF Input pin Capacitance CIN VIN=0V 6 pF Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2096-16/22 LE25S40MB AC Characteristics Ratings Parameter Symbol unit min typ max Read instruction(03h) Clock frequency All instructions except for read(03h) Input signal rising/falling time SCK logic high level pulse width 25MHz fCLK tRF 0.1 tCLHI 14 40MHz SCK logic low level pulse width 25MHz 25 MHz 40 MHz V/ns ns 11.5 tCLLO 40MHz 14 ns 11.5 CS setup time tCSS 10 ns CS hold time tCSH 10 ns Data setup time tDS 5 ns Data hold time tDH CS wait pulse width tCPH Output high impedance time from CS tCHZ Output data time from SCK tV Output data hold time tHO 1 Output low impedance time from SCK tCLZ 0 ns WP setup time tWPS 20 ns WP hold time tWPH 20 ns HOLD setup time tHS 5 ns HOLD hold time tHH 5 ns Output low impedance time from HOLD tHLZ 12 Output high impedance time from HOLD tHHZ 9 ns Power-down time tDP 5 μs Power-down recovery time tPRB Write status register time tSRW 256Byte Page programming cycle time nByte tPP 5 ns 25 ns 8 15 ns 11 ns ns ns 5 μs 8 10 ms 6 8 ms ms 0.15+ 0.20+ n*5.85/256 n*7.80/256 Small sector erase cycle time tSSE 0.04 0.15 s Sector erase cycle time tSE 0.08 0.25 s Chip erase cycle time tCHE 0.3 3.0 s AC Test Conditions Input pulse level ··············· 0.2VDD to 0.8VDD Input rising/falling time···· 5ns Input timing level ············· 0.3VDD, 0.7VDD Output timing level ·········· 1/2×VDD Output load ······················ 15pF Note: As the test conditions for "typ", the measurements are conducted using 1.8V for VDD at room temperature. 0.8VDD input level input / output timing level 0.7VDD 1/2VDD 0.2VDD 0.3VDD No.A2096-17/22 LE25S40MB Timing waveforms Serial Input Timing tCPH CS tCSH tCLHI tCSS tCLLO tCSH tCSS SCK tDS SI tDH DATA VALID High Impedance SO High Impedance Serial Output Timing CS SCK tCLZ SO tHO tCHZ DATA VALID tV SI Hold Timing CS tHS tHH tHH tHS SCK HOLD tHLZ tHHZ High Impedance SI Status resistor write Timing CS tWPS tWPH WP No.A2096-18/22 LE25S40MB Figure 19 Status Register Write Flowchart Status register write Start 06h 01h Write enable Set status register write command Data status register write start on rising edge of CS 05h NO Set status register read command Bit 0= “0” ? YES End of status register write * Automatically placed in write disabled state at the end of the status register write No.A2096-19/22 LE25S40MB Figure 20 Erase Flowcharts Small sector erase Sector erase Start Start 06h Write enable 06h D8h 20h / D7h Address 1 NO Address 1 Set small sector erase command Address 2 Address 2 Address 3 Address 3 Start erase on rising edge of CS Start erase on rising edge of CS Set status register read command 05h Write enable 05h NO Bit 0 = “0” ? YES End of erase * Automatically placed in write disabled state at the end of the erase Set sector erase command Set status register read command Bit 0 = “0” ? YES End of erase * Automatically placed in write disabled state at the end of the erase No.A2096-20/22 LE25S40MB Figure 21 Page Program Flowchart Page program Chip erase Start Start 06h 06h Write enable 60h / C7h Set chip erase command Write enable 02h Address 1 Start erase on rising edge of CS 05h Set page program command Address 2 Address 3 Set status register read command Data 0 Bit 0 = “0” ? Data n YES NO Start program on rising edge of CS End of erase * Automatically placed in write disabled state at the end of the erase Set status register read command 05h NO Bit 0= “0” ? YES End of programming * Automatically placed in write disabled state at the end of the programming operation. No.A2096-21/22 LE25S40MB SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. No.A2096-22/22