STMICROELECTRONICS BD237

BD235
BD237
Low voltage NPN power transistors
Features
■
Low saturation voltage
■
NPN transistors
Applications
■
Audio, power linear and switching applications
3
1
SOT-32
(TO-126)
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type is BD238.
Table 1.
2
Figure 1.
Internal schematic diagram
Device summary
Order codes
Marking
Package
Packaging
BD235
BD235
SOT-32
Tube
BD237
BD237
SOT-32
Tube
June 2009
Doc ID 4189 Rev 3
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Absolute maximum ratings
1
BD235, BD237
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Unit
BD235
BD237
VCBO
Collector-base voltage (IE = 0)
60
100
V
VCER
Collector-emitter voltage (RBE = 1 kΩ)
60
100
V
VCEO
Collector-emitter voltage (IB = 0)
60
80
V
VEBO
Emitter-base voltage (IC = 0)
5
V
Collector current
2
A
ICM
Collector peak current (tp < ms)
6
A
PTOT
Total dissipation at Tcase = 25°C
25
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
IC
TJ
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Parameter
Max. operating junction temperature
Doc ID 4189 Rev 3
BD235, BD237
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
0.1
mA
2
mA
1
mA
Collector cut-off current
VCB = rated VCBO
(IE = 0)
VCB = rated VCBO TC= 150°C
Emitter cut-off current
(IC = 0)
VEB = 5V
Collector-emitter
sustaining voltage
(IB = 0)
IC = 100mA
for BD235
for BD237
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = 1A __
IB = 0.1A
-
0.6
V
VBE(on)(1)
Base-emitter on voltage
IC = 1A ___
VCE = 2V
-
1.3
V
IC = 150mA _
VCE = 2V
40
IC = 1A_
VCE = 2V
25
ICBO
IEBO
VCEO(sus)
(1)
hFE(1)
DC current gain
-
-
60
80
-
V
V
-
1. Pulsed duration = 300 µs, duty cycle = 1.5 %.
2.1
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
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Derating curves
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Electrical characteristics
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BD235, BD237
Figure 4.
DC current gain (VCE = 2 V)
Figure 5.
DC current gain (VCE = 4 V)
Figure 6.
Collector-emitter saturation
voltage
Figure 7.
Base-emitter saturation
voltage
Figure 8.
Base-emitter on voltage
Figure 9.
Resistive load switching time
(on)
Doc ID 4189 Rev 3
BD235, BD237
Electrical characteristics
Figure 10. Resistive load switching time
(off)
2.2
Test circuit
Figure 11. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
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Package mechanical data
3
BD235, BD237
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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BD235, BD237
Package mechanical data
Doc ID 4189 Rev 3
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Revision history
BD235, BD237
4
Revision history
Table 4.
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Document revision history
Date
Revision
Changes
11-Feb-2003
1
Initial release.
09-Jul-2007
2
Added: figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12.
03-Jun-2009
3
Minor text changes.
Doc ID 4189 Rev 3
BD235, BD237
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