STMICROELECTRONICS MJD32CT4-A

MJD32CT4-A
Low voltage PNP power transistor
General features
■
This device is qualified for automotive
application
■
Surface-mounting TO-252 power package in
tape & reel
■
NPN type is MJD31CT4-A
3
1
Applications
■
General purpose switching and amplifier
transistor
DPAK
TO-252
Description
The device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Internal schematic diagram
Order codes
Part Number
Marking
Package
Packaging
MJD32CT4-A
MJD32C
DPAK
Tape & reel
June 2007
Rev 1
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www.st.com
9
Electrical ratings
1
MJD32CT4-A
Electrical ratings
Table 1.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-100
V
VCEO
Collector-base voltage (IB = 0)
-100
V
VEBO
Emitter-base voltage (IC = 0)
-5
V
Collector current
-3
A
Collector peak current
-5
A
Base current
-1
A
PTOT
Total dissipation at T c = 25°C
15
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
IC
ICM
IB
TJ
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Parameter
Max. operating junction temperature
MJD32CT4-A
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 2.
Electrical characteristics
Symbol
ICES
ICEO
IEBO
Parameter
Collector cut-off current
(VBE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
Test Conditions
Min.
Max.
Unit
VCE =-100V
-20
µA
VCB =-60V
-50
µA
VEB =-5V
-0.1
mA
IC =-30mA
-100
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =-3A
_
IB =-375mA
VBE(on) (1)
Base-emitter on voltage
IC =-3A
_
VCE=-4V
IC =-1A
_ _ VCE =-4V
25
IC = -3A
VCE =-4V
10
hFE
DC current gain
Typ.
V
-1.2
V
-1.8
V
50
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristic (curves)
Figure 1.
Safe operating area
Figure 2.
Derating curve
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Electrical characteristics
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MJD32CT4-A
Figure 3.
DC current gain
Figure 4.
DC current gain
Figure 5.
Collector-emitter saturation
voltage
Figure 6.
Base-emitter saturation
voltage
Figure 7.
Collector-emitter on voltage
Figure 8.
Resistive load switching time
MJD32CT4-A
Electrical characteristics
Figure 9.
2.2
Resistive load switching time
Test circuits
Figure 10. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Figure 11. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
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Package mechanical data
3
MJD32CT4-A
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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MJD32CT4-A
Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
1.00
0.024
L2
L4
V2
0.8
0.60
0
o
0.031
8
o
0
o
0.039
0o
P032P_B
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Revision history
4
MJD32CT4-A
Revision history
Table 3.
8/9
Revision history
Date
Revision
01-Jun-2007
1
Changes
Initial release.
MJD32CT4-A
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