FFAF60UA60DN tm 60 A, 600 V, Ultrafast ll Dual Diode Features • Ultrafast Recovery, Trr < 90 ns (@ IF = 30 A) The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) • 600V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and Switching Mode Power Supply • Welding, UPS and Motor Control Application Pin Assignments 3 2 1 1. Anode 2. Cathode 3. Anode Absolute Maximum Ratings Per leg at TC=25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Rating 600 Unit V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG 180 Operating and Storage Temperature Range Thermal Characteristics A -65 to +150 o Rating Unit C Per leg at TC=25oC unless otherwise noted Symbol RθJC @ TC = 45oC Parameter Maximum Thermal Resistance, Junction to Case o 2.4 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F60UA60DN FFAF60UA60DN TO3PF - - 30 ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev. A 1 www.fairchildsemi.com FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode November 2009 Symbol Per leg at TC=25oC unless otherwise noted Min. Typ. Max. Unit VF 1 IF = 30 A IF = 30 A Parameter TC = 25oC TC = 125oC - - 2.2 2.0 V IR1 VR = 600 V VR = 600 V TC = 25oC TC = 125oC - - 100 150 µA trr Irr Qrr IF = 30 A, di/dt = 200 A/µs TC = 25oC - - 90 8 360 ns A nC WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ Notes: 1: Pulse: Test Pulse width = 300 µs, Duty Cycle = 2% Test Circuit and Waveforms ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev. A 2 FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode Electrical Characteristics www.fairchildsemi.com Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 10 100 o TC = 125 C TC = 125 C Reverse Current , IR [µA] Forward Current, IF [A] o 10 o TC = 25 C o TC = 75 C 1 0.1 0.0 0.5 1.0 1.5 Forward Voltage, VF [V] 200 300 400 500 Reverse Voltage, VR [V] IF = 30A Reverse Recovery Time, Trr [ns] Capacitances , Cj [pF] o TC = 25 C 600 150 Typical Capacitance at 0V = 205pF 150 100 50 0 0.1 1 10 Reverse Voltage, VR [V] o TC = 125 C 120 o TC = 75 C 90 60 o TC = 25 C 30 0 100 100 200 di/dt [A/µs] 300 400 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 40 Average Forward Current, IF(AV) [A] 12 Reverse Recovery Current, Irr [A] 0.1 Figure 4. Typical Reverse Recovery Time vs. di/dt 200 o TC = 125 C 9 o TC = 75 C 6 o TC = 25 C 3 IF = 30A 0 100 o TC = 75 C 0.01 100 2.0 Figure 3.Typical Junction Capacitance 1 200 di/dt [A/µs] ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev. A 300 30 20 10 0 25 400 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode Typical Performance Characteristics FFAF60UA60DN 60 A, 600 V, Ultrafast ll Dual Diode Mechanical Dimensions TO-3PF Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev. A 4 www.fairchildsemi.com ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev. A www.fairchildsemi.com