FFPF60SA60DS tm 6 A, 600 V, STEALTH™ Dual Diode Features • Stealth Recovery trr = 39 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant The FFPF60SA60DS is STEALTH™ dual diode with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • • • • • • Switch Mode Power Supplies Hard Swithed PFC Boost Diode UPS Free wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode TO-220F-3L 1 2 Absolute Maximum Ratings (per leg) Symbol VRRM Parameter Peak Repetitive Reverse Voltage 3 1 2 3 TC=25°C unless otherwise noted Value 600 Unit V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 80 A PD Power Dissipation 26 W WAVL Avalanche Energy (1A, 40mH) 20 mJ TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Value 3.125 Unit °C/W 62.5 °C/W @ TC = 95 °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient ©2004 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A 1 www.fairchildsemi.com FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode October 2004 Symbol TC=25 °C unless otherwise noted Parameter VF * Min. Typ. Max. Unit V Forward Voltage IR * IF = 8 A IF = 8 A TC = 25 °C TC = 125 °C - 2.0 1.6 2.4 2.0 @ rated VR TC = 25 °C TC = 125 °C - - 100 1000 µA Reverse Current trr Maximum Reverse Recovery Time (IF = 1 A, di/dt = 100 A/µs, VR = 30 V) - - 25 ns trr Maximum Reverse Recovery Time (IF = 8 A, di/dt = 100 A/µs, VR = 30 V) - - 30 ns trr Irr Qrr Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF = 8 A, di/dt = 200 A/µs, VR = 390 V) - 39 2 39 - ns A nC *Pulse Test: Pulse Width=300 µs, Duty Cycle=2% Typical Characteristics 10 o o TC = 150 C 100 Reverse Current , I R [µA] Forward Current , IF [A] TC = 150 C o TC = 25 C o TC = 125 C o TC = 100 C 1 0.1 o TC = 125 C o 10 TC = 100 C 1 o 0.1 TC = 25 C 0.001 0.5 1.0 1.5 2.0 2.5 0 Forward Voltage , VF [V] 100 150 200 250 300 350 400 450 500 550 600 Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current vs. Reverse Voltage vs. Forward Current 200 44 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 169.3 pF Capacitance , Cj [pF] 50 150 100 50 0.1 1 10 100 o Tc = 25 C 40 38 36 34 32 30 28 26 100 200 300 400 500 600 di/dt [A/µs] Reverse Voltage , VR [V] Figure 3. Typical Junction Capacitance ©2004 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A IF = 8 A 42 Figure 4. Typical Reverse Recovery Time vs. di/dt 2 www.fairchildsemi.com FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode Electrical Characteristics (per leg) (Continued) 5 o TC = 25 C 4 2 1 200 300 400 500 C 3 0 100 10 Average Forward Current , IF(AV) [A] IF = 8 A D Reverse Recovery Current , Irr [A] 6 5 0 60 600 80 100 120 140 160 o Case Temperature , TC [ C] di/dt [A/µs] Figure 5. Typical Reverse Recovery Current vs. di/dt Figure 6. Forward Curent Derating Curve Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 VDD 0.25 IRM IRM t2 Figure 7. trr Test Circuit Figure 8. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L VAVL R CURRENT SENSE Q1 + IL VDD DUT t0 Figure 9. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A IL I V t1 t2 t Figure 10. Avalanche Current and Voltage Waveforms 3 www.fairchildsemi.com FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode Typical Characteristics FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A 4 www.fairchildsemi.com FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode ©2004 Fairchild Semiconductor Corporation FFPF60SA60DS Rev. A 5 www.fairchildsemi.com