tm FFPF10F150S 10 A, 1500 V, Damper Diode Features • High Speed Recovery trr = 170 ns (@ IF = 1 A) • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) • 1500 V Reverse Voltage and High Reliability • Low Forward Voltage Applications • Suitable for Damper Diode in Horizontal Deflection Circuits TO-220F 1 Absolute Maximum Ratings Symbol 1. Cathode 2 2. Anode TC=25°°C unless otherwise noted VRRM Parameter Peak Repetitive Reverse Voltage Value 1500 Unit V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Value 3.0 Unit °C/W @ TC = 125°C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Electrical Characteristics Symbol VF * IR * TC=25 °C unless otherwise noted Parameter Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR Min. Typ. Max. TC = 25 °C TC = 125 °C - - 1.6 1.4 TC = 25 °C TC = 125 °C - - 10 80 Unit V µA trr Maximum Reverse Recovery Time (IF =1 A, di/dt = 50 A/µs) - - 170 ns tfr Maximum Forward Recovery Time (IF =6.5 A, di/dt = 50 A/µs) - - 250 ns - - 14 V V FRM Maximum Forward Recovery * Pulse Test: Pulse Width=300 µs, Duty Cycle=2% ©2000 Fairchild Semiconductor Corporation FFPF10F150S Voltage www.fairchildsemi.com FFPF10F150S 10 A, 1500 V, Damper Diode June 2000 100 [ µA] 10 o TJ = 125 C R 10 Reverse Current , I Forward Current , I F [A] 100 o TJ = 125 C 1 o TJ = 25 C 1 o TJ = 100 C 0.1 o TJ = 25 C 0.01 0.001 0.1 0.0 0.4 0.8 1.2 1.6 0 2.0 300 1200 1500 400 200 [ns] Typical Capacitance at 0V = 150 pF 180 Reverse Recovery Time , T rr 160 Capacitance , Cj [pF] 900 Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 140 120 100 80 60 40 20 300 di/dt = 50A/µs 200 di/dt = 100A/µs 100 0 0 0.1 1 10 1 100 2 3 4 5 6 7 8 9 10 Forward Current , IF [A] Reverse Voltage , VR [V] Figure 4. Typical Reverse Recovery Time vs. Forward Current Figure 3. Typical Junction Capacitance 15 F(AV) [nC] [A] 2000 Average Forward Current , I rr di/dt = 100A/µs 1500 1000 di/dt = 50A/µs 500 0 1 2 3 4 5 6 7 8 Forward Current , IF [A] Figure 5. Typical Stored Charge vs. Forward Current ©2000 Fairchild Semiconductor Corporation FFPF10F150S 9 10 10 C D Stored Recovery Charge , Q 600 Reverse Voltage , VR [V] Forward Voltage , VF [V] 5 0 80 100 120 140 160 o Case Temperature , TC [ C] Figure 6. Forward Current Derating Curve www.fairchildsemi.com FFPF10F150S 10 A, 1500 V, Damper Diode Typical Characteristics FFPF10F150S 10 A, 1500 V, Damper Diode Package Dimensions TO-220F 2L ø3.18 ±0.10 2.54 ±0.20 3.30 ±0.10 10.16 ±0.20 12.00 ±0.20 MAX1.47 15.87 ±0.20 (1.80) (6.50) (1.00x45°) 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) 2.76 ±0.20 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ±0.20] 9.40 ±0.20 +0.10 0.50 –0.05 4.70 ±0.20 2.54TYP [2.54 ±0.20] Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FFPF10F150S www.fairchildsemi.com FFPF10F150S 10 A, 1500 V, Damper Diode ©2000 Fairchild Semiconductor Corporation FFPF10F150S www.fairchildsemi.com