STD55NH2LL N-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET™ POWER MOSFET VDSS 24 V TYPE STD55NH2LL ■ ■ ■ ■ ■ ■ ■ ■ RDS(on) < 0.011 Ω ID 40 A(*) TYPICAL RDS(on) = 0.01 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 4.5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION The STD55NH2LL is based on the latest generation of ST's proprietary STripFET™ technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications. 3 3 1 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STD55NH2LLT4 STD55NH2LL-1 MARKING D55NH2LL D55NH2LL PACKAGE TO-252 TO-251 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(*) ID IDM(2) Ptot EAS(3) Tstg Tj March 2004 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 24 24 ± 18 40 28 160 60 0.4 600 Unit V V V V A A A W W/°C mJ -55 to 175 °C 1/12 STD55NH2LL THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max °C/W °C/W °C 2.5 100 275 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. 24 Typ. Max. Unit V 1 10 ±100 µA µA nA Typ. Max. 0.010 0.012 0.011 0.0135 Unit V Ω Ω Typ. 18 990 385 40 Max. VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 18V ON (4) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS ID = 250 µA VGS = 10 V ID = 20 A ID = 20 A VGS = 4.5 V Min. 1 Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V ID = 10 A VDS = 10V f = 1 MHz VGS = 0 Min. Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain DYNAMIC Symbol gfs (4) Ciss Coss Crss RG 2/12 1.3 Unit S pF pF pF Ω STD55NH2LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge Qoss(5) Output Charge Test Conditions VDD = 10 V ID = 20 A VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 3) 0.44V ≤ VDD ≤ 10V, ID= 40 A VGS= 4.5 V VDS= 16 V Min. VGS= 0 V Typ. 15 56 Max. Unit ns ns 8.7 4.2 2.4 11 nC nC nC 7.6 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 10 V ID = 20 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 3) Min. Typ. 13 10 Max. Unit ns ns Min. Typ. Max. 40 160 1.3 Unit A A V ns nC A SOURCE DRAIN DIODE Symbol ISD ISDM VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 20 A VGS = 0 ISD = 40 A di/dt = 100A/µs Tj = 150°C VDD = 15 V (see test circuit, Figure 5) (1) Garanted when external Rg=4.7 Ω and tf < tfmax. (2) Pulse width limited by safe operating area (3) Starting Tj = 25 oC, ID = 20A, VDD = 15V (*) Value limited by wire bonding Safe Operating Area Thermal Impedance 32.5 28 1.7 (4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (5) Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A . 3/12 STD55NH2LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/12 STD55NH2LL Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/12 STD55NH2LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 STD55NH2LL TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/12 STD55NH2LL TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL "A" L2 D = 1 = G 2 = = = E = B2 3 B DETAIL "A" L4 0068772-B 8/12 STD55NH2LL 9/12 STD55NH2LL 10/12 STD55NH2LL 11/12 STD55NH2LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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