STMICROELECTRONICS STPSC1006D

STPSC1006D
600 V power Schottky silicon carbide diode
Features
■
No or negligible reverse recovery
■
Switching behavior independent of
temperature
■
Particularly suitable in PFC boost diode
function
A
Description
K
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
May 2008
TO-220AC
STPSC1006D
Table 1.
Rev 1
Device summary
IF(AV)
10 A
VRRM
600 V
Tj (max)
175 °C
QC (typ)
12 nC
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7
Characteristics
1
STPSC1006D
Characteristics
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
18
A
Continuous forward current
TC = 115 °C
10
A
IFSM
IF
Surge non repetitive forward current
tp = 10 ms sinusoidal
40
A
IFRM
Repetitive peak forward current
δ = 0.1, TC = 110 °C,
Tj = 150 °C
40
A
Tstg
Storage temperature range
-55 to +175
°C
Operating junction temperature
-40 to +175
°C
Tj
Table 3.
Thermal resistance
Symbol
Rth(j-c)
Table 4.
Symbol
Parameter
Value
Unit
2
°C/W
Junction to case
Static electrical characteristics (per diode)
Parameter
IR (1)
Reverse leakage
current
VF (2)
Forward voltage drop
Tests conditions
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Min.
VR = VRRM
IF = 10 A
Typ
Max.
30
300
210
1500
1.4
1.7
1.6
2.1
Unit
µA
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.09 x IF2(RMS)
Table 5.
Symbol
2/7
Other parameters
Parameter
Test conditions
Typ
Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 10 A dIF/dt = -200 A/µs
Tj = 150 °C
12
nC
C
Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
650
pF
STPSC1006D
Figure 1.
Characteristics
Forward voltage drop versus
forward current (typical values)
Figure 2.
IFM(A)
20
1.E+04
Reverse leakage current versus
reverse voltage applied
(maximum values)
IR(µA)
18
Tj=175 °C
16
1.E+03
14
Tj=25 °C
Tj=150 °C
Tj=150 °C
12
1.E+02
10
Tj=175 °C
1.E+01
8
6
1.E+00
4
Tj=25 °C
VR(V)
VFM(V)
2
1.E-01
0
0.0
0.5
Figure 3.
70
1.0
1.5
2.0
2.5
0
3.0
Peak forward current versus case
temperature
Figure 4.
IM(A)
100
150
200
250
300
350
400
450
500
550
600
Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
500
T
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
450
δ=0.1
60
50
δ=tp/T
tp
400
50
350
300
40
30
δ=0.3
250
δ=0.5
200
150
20
100
δ=1
10
δ=0.7
VR(V)
50
TC(°C)
0
0
0
25
50
75
100
125
150
175
1
10
100
1000
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Characteristics
Figure 5.
1.0
STPSC1006D
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 6.
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform,
typical values)
IFSM(A)
Zth(j-c)/Rth(j-c)
1.E+03
0.9
0.8
0.7
1.E+02
Tj=25 °C
0.6
0.5
Tj=125 °C
0.4
1.E+01
0.3
0.2
0.1
tp(s)
Single pulse
tp(s)
0.0
1.E-05
Figure 7.
1.E+00
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-05
1.E-04
1.E-03
Total capacitive charges versus dIF/dt (typical values)
QC(nC)
18
IF=10A
VR=400 V
Tj=150 °C
16
14
12
10
8
6
4
dIF/dt(A/µs)
2
0
0
4/7
50
100
150
200
250
300
350
400
450
500
1.E-02
1.E-01
1.E+00
STPSC1006D
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: C
●
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 6.
TO-220AC Dimensions
Dimensions
Ref.
A
H2
ØI
C
L5
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L7
L6
L2
F1
D
L9
L2
L4
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
F
M
E
G
M
Diam. I
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
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Ordering information
3
Ordering information
Table 7.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPSC1006D
STPSC1006D
TO-220AC
1.86 g
50
Tube
Revision history
Table 8.
6/7
STPSC1006D
Document revision history
Date
Revision
05-May-2008
1
Description of changes
First issue
STPSC1006D
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