STTH10002 Ultrafast recovery diode Main product characteristics IF(AV) 2 x 50 A VRRM 200 V Tj (max) 150° C VF (typ) 0.72 V trr (typ) 30 ns Features and benefits ■ Very low forward losses ■ Low recovery time ■ High surge current capability ■ Insulated – Insulating voltage = 2500 Vrms – Capacitance = 45 pF A1 K1 A1 K2 A2 K2 K1 A2 A1 A1 K1 A2 K1 K2 ISOTOP STTH10002TV1 Description K2 A2 ISOTOP STTH10002TV2 The STTH10002 is a dual rectifier suited for welding equipment, and high power industrial applications. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. Order codes April 2006 Part Number Marking STTH10002TV1 STTH10002TV1 STTH10002TV2 STTH10002TV2 Rev 1 1/8 www.st.com Characteristics STTH10002 1 Characteristics Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 2. Value Unit 200 V 150 A 50 A 750 A -55 to + 175 °C 150 °C Value Unit Per diode Per diode Tc = 100° C Per device Tc = 95° C tp = 10 ms Sinusoidal Maximum operating junction temperature Thermal parameters Symbol Parameter Per diode Rth(j-c) Junction to case Rth(c) Coupling 1 Total 0.55 ° C/W 0.1 When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VF(2) Forward voltage drop Tj = 125° C Tj = 150° C Typ Max. Unit 50 VR = VRRM µA 50 500 IF = 50 A 1 IF = 100 A 1.15 IF = 100 A 0.90 1.0 IF = 50 A 0.72 0.80 IF = 100 A 0.86 0.97 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.63 x IF(AV) + 0.0034 IF2(RMS) 2/8 Min. V STTH10002 Characteristics Table 4. Dynamic characteristics Symbol Parameter trr Test conditions Typ Max. Unit IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C 53 65 ns IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25 °C 30 37 Reverse recovery current IF = 50 A, dIF/dt = 200 A/µs, VR = 160 V, Tj = 125 °C 10 13 Forward recovery time IF = 50 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax, Tj = 25 °C 180 ns Forward recovery voltage IF = 50 A, dIF/dt = 200 A/µs, Tj = 25 °C 1.6 V Reverse recovery time IRM tfr VFP Figure 1. Peak current versus duty cycle Figure 2. IM(A) Min. A Forward voltage drop versus forward current (typical values, per diode) IFM(A) 600 300 T IM 500 δd=tp/T 250 tp 400 200 P = 100 W 300 150 P = 60 W 200 Tj=150°C 100 P = 30 W Tj=25°C 50 100 VFM(V) δ 0 0 0.0 0.0 0.1 Figure 3. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.0 Forward voltage drop versus forward current (maximum values, per diode) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration Zth(j-c)/Rth(j-c) IFM(A) 1.0 300 Single pulse ISOTOP 250 200 150 100 Tj=150°C 50 Tj=25°C VFM(V) tp(s) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 3/8 Characteristics Figure 5. STTH10002 Junction capacitance versus reverse applied voltage (typical values) Figure 6. C(pF) 450 1000 F=1MHz Vosc=30mVRMS Tj=25°C Reverse recovery charges versus dIF/dt (typical values) QRR(nC) IF = 50 A VR=160 V 400 350 300 Tj=125 °C 250 200 150 100 Tj=25 °C 50 VR(V) 100 dIF/dt(A/µs) 0 1 10 Figure 7. 100 1000 10 100 Reverse recovery time versus dIF/dt Figure 8. (typical values) tRR(ns) 1000 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 120 20 IF= 50 A VR=160V IF= 50 A VR= 160 V 110 100 16 90 80 12 Tj=125 °C 70 Tj=125 °C 60 50 8 Tj=25 °C 40 30 4 20 10 Tj=25 °C dIF/dt(A/µs) 10 100 Figure 9. 1000 Dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125°C] 1.4 IF= 50 A VR=160V 1.2 1.0 IRM 0.8 0.6 QRR 0.4 0.2 Tj(°C) 0.0 25 4/8 dIF/dt(A/µs) 0 0 50 75 100 125 150 10 100 1000 STTH10002 2 Ordering information scheme Ordering information scheme STTH 100 02 TVx Ultrafast switching diode Average forward current 100 = 100 A Repetitive peak reverse voltage 02 = 200 V Package TVx = ISOTOP 5/8 Package information 3 STTH10002 Package information Table 5. ISOTOP dimensions DIMENSIONS REF. Millimeters Inches E Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 E2 C 0.75 0.85 0.030 0.033 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 G2 A C A1 C2 F1 P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 B F 4.10 4.30 0.161 0.169 G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 ØP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH10002 4 5 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH10002TV1 STTH10002TV1 ISOTOP 27 g 10 Tube STTH10002TV2 STTH10002TV2 ISOTOP 27 g 10 Tube Revision history Date Revision 05-Apr-2006 1 Description of Changes First issue 7/8 STTH10002 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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