STMICROELECTRONICS STTH60R04W

STTH60R04
Ultrafast recovery diode
Main product characteristics
IF(AV)
60 A
VRRM
400 V
Tj
175° C
VF (typ)
0.95 V
trr (typ)
31 ns
A
K
Features and benefits
■
Very low switching losses
■
High frequency and/or high pulsed current
operation
■
High junction temperature
A
K
DO-247
STTH60R04W
Description
The STTH60R04 series uses ST's new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits.
Order codes
Available in a through-the-hole package, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1.
Part Number
Marking
STTH60R04W
STTH60R04W
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
VRSM
Non repetitive peak reverse voltage
400
V
RMS forward current
100
A
60
A
375
A
650
A
IF(RMS)
IF(AV)
Average forward current, δ = 0.5
IFRM
Repetitive peak forward current
IFSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
Tstg
Storage temperature range
-65 to +175
°C
Operating junction temperature range
-40 to +175
°C
Tj
March 2007
Tc = 110° C
tp = 5 µs F = 1 kHz square
Rev 1
1/7
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Characteristics
1
STTH60R04
Characteristics
Table 2.
Thermal parameters
Symbol
Rth(j-c)
Table 3.
Symbol
IR(1)
Parameter
Junction to case
Value
Unit
0.7
°C/W
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25° C
Tj = 125° C
Min
Typ
Forward voltage drop
Tj = 100° C
Unit
60
VR = VRRM
µA
60
Tj = 25° C
VF(2)
Max
600
1.5
IF = 60 A
Tj = 150° C
1.05
1.3
0.95
1.2
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.005 x IF2(RMS)
Table 4.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min
Typ
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
Unit
80
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
40
55
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C
31
45
Reverse recovery current
IF = 60 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125° C
11
16
S
Softness factor
IF = 60 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125° C
0.4
tfr
Forward recovery time
IF = 60 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
800
ns
Forward recovery voltage
IF = 60 A
Tj = 25° C
3.2
V
trr
IRM
VFP
2/7
Max
Reverse recovery time
dIF/dt = 100 A/µs
ns
A
STTH60R04
Characteristics
Figure 1.
Conduction losses versus
average current
Figure 2.
P(W)
100
IFM(A)
200
δ=0.5
δ=1
180
δ=0.2
80
Forward voltage drop versus
forward current
TJ=150°C
(Maximum values)
160
δ=0.1
140
δ=0.05
60
120
TJ=150°C
(Typical values)
100
40
80
60
T
40
20
δ=tp/T
IF(AV)(A)
TJ=25°C
(Maximum values)
20
tp
VFM(V)
0
0
0
10
Figure 3.
20
30
40
50
60
70
0.0
80
Relative variation of thermal
impedance junction to case
versus pulse duration
0.2
Figure 4.
Zth(j-c)/Rth(j-c)
1.0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
25.0
Single pulse
DO-247
0.4
IF= 60A
VR=320V
22.5
20.0
17.5
15.0
12.5
Tj=125 °C
10.0
7.5
5.0
0.1
1.E-03
Figure 5.
160
Tj=25 °C
2.5
tp(s)
dIF/dt(A/µs)
0.0
1.E-02
1.E-01
10
1.E+00
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
tRR(ns)
800
IF= 60A
VR=320V
140
100
1000
Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
IF= 60 A
VR=320V
700
600
120
500
100
Tj=125 °C
Tj=125 °C
400
80
300
60
Tj=25 °C
40
200
20
100
Tj=25 °C
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
10
100
1000
10
100
1000
3/7
Characteristics
Figure 7.
1.4
STTH60R04
Relative variations of dynamic
parameters versus junction
temperature
Figure 8.
VFp(V)
QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C]
10
IF=60A
VR=320V
1.2
Transient peak forward voltage
versus dIF/dt (typical values)
IF= 60A
Tj=125°C
9
8
1.0
7
IRM
0.8
6
5
0.6
4
QRR
3
0.4
2
0.2
1
T j(°C)
0.0
dIF/dt(A/µs)
0
25
50
Figure 9.
3000
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus
(typical values)
reverse voltage applied (typical
values)
C(pF)
tFR(ns)
1000
IF=60A
VFR=1.1 x V F max.
Tj=125°C
2500
F=1MHz
VOSC=30mVRMS
Tj=25°C
2000
1500
1000
500
dIF/dt(A/µs)
VR(V)
100
0
0
4/7
100
200
300
400
500
1
10
100
1000
STTH60R04
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.8 Nm
●
Maximum torque value: 1.0 Nm
Table 5.
DO-247 dimensions
Dimensions
Ref.
Millimeters
Min.
V
Typ.
Inches
Max.
Min.
Typ.
Max.
A
4.85
5.15
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
Dia
V
F2
2.00
0.078
A
H
F3
2.00
G
2.40
0.078
10.90
0.094
0.429
L5
L
L2
L4
F2
L3
L1
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30
0.169
L2
F3
D
V2
L3
F
G
H
M
E
0.145
18.50
14.20
0.728
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00
0.078
0.118
V
5°
5°
V2
60°
60°
Dia.
3.55
3.65
0.139
0.143
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
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Ordering information
3
4
6/7
STTH60R04
Ordering information
Part Number
Marking
Package
Weight
Base qty
Delivery mode
STTH60R04W
STTH60R04W
DO-247
4.40 g
30
Tube
Revision history
Date
Revision
31-Mar-2007
1
Description of Changes
First issue
STTH60R04
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