STTH60R04 Ultrafast recovery diode Main product characteristics IF(AV) 60 A VRRM 400 V Tj 175° C VF (typ) 0.95 V trr (typ) 31 ns A K Features and benefits ■ Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature A K DO-247 STTH60R04W Description The STTH60R04 series uses ST's new 400 V planar Pt doping technology. The STTH60R04 is specially suited for switching mode base drive and transistor circuits. Order codes Available in a through-the-hole package, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Table 1. Part Number Marking STTH60R04W STTH60R04W Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V VRSM Non repetitive peak reverse voltage 400 V RMS forward current 100 A 60 A 375 A 650 A IF(RMS) IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Tj March 2007 Tc = 110° C tp = 5 µs F = 1 kHz square Rev 1 1/7 www.st.com Characteristics 1 STTH60R04 Characteristics Table 2. Thermal parameters Symbol Rth(j-c) Table 3. Symbol IR(1) Parameter Junction to case Value Unit 0.7 °C/W Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min Typ Forward voltage drop Tj = 100° C Unit 60 VR = VRRM µA 60 Tj = 25° C VF(2) Max 600 1.5 IF = 60 A Tj = 150° C 1.05 1.3 0.95 1.2 V 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.005 x IF2(RMS) Table 4. Symbol Dynamic characteristics Parameter Test conditions Min Typ IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Unit 80 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 40 55 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 31 45 Reverse recovery current IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 11 16 S Softness factor IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 0.4 tfr Forward recovery time IF = 60 A, dIF/dt = 100 A/µs VFR = 1.1 x VFmax, Tj = 25° C 800 ns Forward recovery voltage IF = 60 A Tj = 25° C 3.2 V trr IRM VFP 2/7 Max Reverse recovery time dIF/dt = 100 A/µs ns A STTH60R04 Characteristics Figure 1. Conduction losses versus average current Figure 2. P(W) 100 IFM(A) 200 δ=0.5 δ=1 180 δ=0.2 80 Forward voltage drop versus forward current TJ=150°C (Maximum values) 160 δ=0.1 140 δ=0.05 60 120 TJ=150°C (Typical values) 100 40 80 60 T 40 20 δ=tp/T IF(AV)(A) TJ=25°C (Maximum values) 20 tp VFM(V) 0 0 0 10 Figure 3. 20 30 40 50 60 70 0.0 80 Relative variation of thermal impedance junction to case versus pulse duration 0.2 Figure 4. Zth(j-c)/Rth(j-c) 1.0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) 25.0 Single pulse DO-247 0.4 IF= 60A VR=320V 22.5 20.0 17.5 15.0 12.5 Tj=125 °C 10.0 7.5 5.0 0.1 1.E-03 Figure 5. 160 Tj=25 °C 2.5 tp(s) dIF/dt(A/µs) 0.0 1.E-02 1.E-01 10 1.E+00 Reverse recovery time versus dIF/dt (typical values) Figure 6. tRR(ns) 800 IF= 60A VR=320V 140 100 1000 Reverse recovery charges versus dIF/dt (typical values) QRR(nC) IF= 60 A VR=320V 700 600 120 500 100 Tj=125 °C Tj=125 °C 400 80 300 60 Tj=25 °C 40 200 20 100 Tj=25 °C dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 1000 10 100 1000 3/7 Characteristics Figure 7. 1.4 STTH60R04 Relative variations of dynamic parameters versus junction temperature Figure 8. VFp(V) QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] 10 IF=60A VR=320V 1.2 Transient peak forward voltage versus dIF/dt (typical values) IF= 60A Tj=125°C 9 8 1.0 7 IRM 0.8 6 5 0.6 4 QRR 3 0.4 2 0.2 1 T j(°C) 0.0 dIF/dt(A/µs) 0 25 50 Figure 9. 3000 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) C(pF) tFR(ns) 1000 IF=60A VFR=1.1 x V F max. Tj=125°C 2500 F=1MHz VOSC=30mVRMS Tj=25°C 2000 1500 1000 500 dIF/dt(A/µs) VR(V) 100 0 0 4/7 100 200 300 400 500 1 10 100 1000 STTH60R04 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm ● Maximum torque value: 1.0 Nm Table 5. DO-247 dimensions Dimensions Ref. Millimeters Min. V Typ. Inches Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 Dia V F2 2.00 0.078 A H F3 2.00 G 2.40 0.078 10.90 0.094 0.429 L5 L L2 L4 F2 L3 L1 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.169 L2 F3 D V2 L3 F G H M E 0.145 18.50 14.20 0.728 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 6/7 STTH60R04 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH60R04W STTH60R04W DO-247 4.40 g 30 Tube Revision history Date Revision 31-Mar-2007 1 Description of Changes First issue STTH60R04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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