STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) max ID Pw STF13NK50Z 500 V <0.48 Ω 11 A 30 W STP13NK50Z 500 V <0.48 Ω 11 A 140 W STW13NK50Z 500 V <0.48 Ω 11 A 140 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability 3 2 1 TO-220 2 TO-220FP 2 3 1 TO-247 Applications ■ 3 1 Figure 1. Internal schematic diagram Switching application Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device summary Order code Marking Package Packaging STF13NK50Z F13NK50Z TO-220FP Tube STP13NK50Z P13NK50Z TO-220 Tube STW13NK50Z W13NK50Z TO-247 Tube March 2009 Rev 2 1/15 www.st.com 15 Contents STx13NK50Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STx13NK50Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 11 11(1) A ID Drain current (continuous) at TC=100 °C 6.93 6.93(1) A IDM(2) Drain current (pulsed) 44 44(1) A PTOT Total dissipation at TC = 25 °C 140 30 W Derating factor 1.12 0.24 W/°C dv/dt(3) VISO TJ Tstg Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 °C) 2500 Operating junction temperature Storage temperature -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Rthj-a Tl Table 4. Symbol Thermal resistance junction-case max Thermal resistance junction-ambient max TO-247 TO-220FP 0.89 62.5 Maximum lead temperature for soldering purpose 50 300 4.17 °C/W 62.5 °C/W °C Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 11 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD= 50 V) 240 mJ 3/15 Electrical characteristics 2 STx13NK50Z Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, TC =125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6.5 A 0.4 0.48 Ω Typ. Max. Unit V(BR)DSS Table 6. Symbol gfs (1) Ciss Coss Crss 500 3 V Dynamic Parameter Test conditions Min. Forward transconductance VDS =15 V, ID = 6.5 A 8.5 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 1600 200 45 pF pF pF VGS=0, VDS =0 V to 400 V 50 pF Equivalent output Coss eq(2). capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400 V, ID = 13 A VGS =10 V Figure 20 47 9 28 nC nC nC Rg Intrinsic gate resistance f= 1 MHz open drain 2.3 Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 Table 7. Switching times Symbol Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time Test conditions VDD=400 V, ID=6.5 A, RG=4.7 Ω, VGS=10 V Figure 19 Min. Typ. Max. Unit 18 23 ns ns 61 24 ns ns STx13NK50Z Electrical characteristics Table 8. Symbol ISD Parameter Test conditions Min Typ. Max Unit Source-drain current 11 A (1) Source-drain current (pulsed) 44 A (2) Forward on voltage ISD=11 A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=6.5 A, di/dt = 100 A/µs, VDD=40 V, Tj=25 °C Figure 21 380 3.4 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD=6.5 A, di/dt = 100 A/µs, VDD=40 V, Tj=150 °C Figure 21 425 3.9 18.5 ns µC A ISDM VSD Source drain diode trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. Symbol Gate-source Zener diode Parameter BVGSO (1) Gate-source breakdown voltage Test conditions Igs=±1 mA (open drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Electrical characteristics STx13NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 STx13NK50Z Figure 8. Electrical characteristics Output characteristics Figure 10. Transconductance Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/15 Electrical characteristics STx13NK50Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 STx13NK50Z 3 Test circuit Test circuit Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 9/15 Package mechanical data 4 STx13NK50Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 STx13NK50Z Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STx13NK50Z TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/15 STx13NK50Z Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Typ Max. 5.15 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 13/15 Revision history 5 STx13NK50Z Revision history Table 10. 14/15 Revision history Date Revision Changes 07-Aug-2007 1 First version 19-Mar-2009 2 Update ID value test condition in Table 6. STx13NK50Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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