STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID STP8NK80Z 800 V < 1.5 Ω 6.2 A STP8NK80ZFP 800 V < 1.5 Ω 6.2 A STW8NK80Z 800 V < 1.5 Ω 6.2 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description 3 1 TO-220 2 TO-220FP TO-247 Figure 1. Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Application ■ Switching applications Table 1. Device summary Order codes Marking Package Packaging STP8NK80Z P8NK80Z TO-220 Tube STP8NK80ZFP P8NK80ZFP TO-220FP Tube STW8NK80Z W8NK80Z TO-247 Tube July 2007 Rev 5 1/15 www.st.com 15 Contents STP8NK80Z - STP8NK80ZFP - STW8NK80Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STP8NK80Z - STP8NK80ZFP - STW8NK80Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 - TO-247 VDS Drain-source voltage (VGS = 0) 800 VGS Gate- source voltage ± 30 ID Drain current (continuous) at TC = 25°C TO-220FP 6.2 V V 6.2 (1) A (1) A Drain current (continuous) at TC = 100°C 3.9 3.9 IDM (2) Drain current (pulsed) 24.8 24.8(1) A PTOT Total dissipation at TC = 25°C 140 30 W Derating factor 1.12 0.24 W/°C ID VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Tj Tstg Max operating Junction temperature Storage temperature 4000 V 4.5 V/ns - 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤6.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. Symbol Unit TO-220 TO-220FP TO-247 0.89 4.2 0.89 °C/W 50 °C/W 62.5 300 °C Value Unit Avalanche characteristics Parameter IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) 6.2 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 300 mJ 3/15 Electrical characteristics 2 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source Breakdown voltage Test conditions ID =1mA, VGS = 0 Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.1 A Symbol gfs (1) Ciss Coss Crss tr tr(off) tr Qg Qgs Qgd tr(Voff) tr tc Max. Unit 800 V 1 50 µA µA ± 10 µA 3.75 4.5 V 1.3 1.5 Ω Typ. Max. Unit VDS = Max rating, @125°C 3 Dynamic Parameter Forward transconductance Test conditions VDS = 15v, ID = 3.1 A Input capacitance VDS = 25 V, f = 1 MHz, Output capacitance Reverse transfer capacitance VGS = 0 Coss eq. (2) Equivalent output capacitance td(on) Typ. VDS = Max rating IDSS Table 6. Min. Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDS =0V, VDS = 0V to 640V VDD = 400 V, ID = 3.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) VDD = 640 V, ID = 6.2 A, VGS = 10 V VDD = 640 V, ID = 6.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 23) Min. 5.2 S 1320 143 27 pF pF pF 58 pF 17 30 48 28 ns ns ns ns 46 8.5 25 nC nC nC 9 9 18 ns ns ns 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 6.2 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.2 A, di/dt = 100 A/µs trr Qrr IRRM Min. Typ. Max. Unit 6.2 24.8 A A 1.6 V 460 2990 13 VDD = 50 V, Tj = 150°C (see Figure 23) ns nC A 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/15 Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristic Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z 3 Test circuit Test circuit Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching times test circuit for resistive load Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load switching and diode recovery times 9/15 Package mechanical data 4 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STP8NK80Z - STP8NK80ZFP - STW8NK80Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/15 L5 1 2 3 L4 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 13/15 Revision history 5 STP8NK80Z - STP8NK80ZFP - STW8NK80Z Revision history Table 9. 14/15 Revision history Date Revision Changes 09-Sep-2004 2 Complete version 17-Aug-2006 3 New template, no content change 20-Apr-2007 4 Typo errors on Table 6 02-Jul-2007 5 Table 2 has been updated STP8NK80Z - STP8NK80ZFP - STW8NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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