HERAF1001G - HERAF1008G CREAT BY ART Pb 10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AC RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: ITO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Marking Diagram Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed HERAF100XG = Specific Device Code Polarity: As marked G = Green Compound High temperature soldering guaranteed: 260℃/10 secnods/0.25", (6.35mm) from case Y = Year WW = Work Week Mounting torque: 5 in-lbs. max Weight: 1.74 grams Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G 50 100 200 300 400 600 800 1000 Units Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 10 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 150 A Maximum Instantaneous Forward Voltage (Note 1) @ 10 A VF Maximum DC Reverse Current at Rated DC Blocking Voltage IR @ T A=25 ℃ @ T A=125 ℃ 1.0 1.3 1.7 10 uA uA Trr 50 80 Typical Junction Capacitance (Note 3) Cj 80 60 Operating Temperature Range Storage Temperature Range RθJC V 400 Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance V nS pF O 2.0 C/W TJ - 65 to + 150 O C TSTG - 65 to + 150 O C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E12 RATINGS AND CHARACTERISTIC CURVES (HERAF1001G THRU HERAF1008G) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 10 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD CURRENT (A) 12 8 6 4 2 0 0 50 100 150 CASE TEMPERATURE (oC) TA=125℃ 100 10 TA=25℃ 1 0.1 150 PEAK FORWARD SURGE CURRENT (A) 0 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 40 60 80 100 120 140 TA=25℃ 120 8.3mS Single Half Sine Wave JEDEC Method 90 FIG. 5- TYPICAL FORWARD CHARACTERISRICS 60 100 HERAF1001G-04G 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 180 150 INSTANTANEOUS FORWARD CURRENT (A) 30 0 JUNCTION CAPACITANCE (pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 HERAF1005 1 0.1 HERAF1006G-08G 120 HERAF1001G-05G 90 0.01 0.4 60 HERAF1006G-08G 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 30 0 1 10 100 1000 REVERSE VOLTAGE (V) Version:E12