MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 2.80 3.00 0.110 0.118 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260°C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 Marking Code : 1P F 0.90 1.20 0.035 0.043 G Ordering Information 0.550 REF Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT2222A RF 3K / 7" Reel 1P 0.037 SOT-23 MMBT2222A RFG 3K / 7" Reel 1P Package Part No. 0.022 REF 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units PD 300 mW Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V IC 600 mA RθJA 417 °C/W TJ, TSTG -55 to + 150 °C Type Number Power Dissipation Collector Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) Notes:1. Valid provided that electrodes are kept at ambient temperature Version : A10 MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Max Units IC= 10μA IE= 0 Symbol V(BR)CBO Min Collector-Base Breakdown Voltage 75 - V Collector-Emitter Breakdown Voltage IC= 10mA IB= 0 V(BR)CEO 40 - V Emitter-Base Breakdown Voltage IE= 10μA IC= 0 V(BR)EBO 6 - V Type Number Collector Cut-off Current VCB= 60V IE= 0 ICBO - 0.01 μA Collector Cut-off Current VCE= 60V VBE(off) = 3.0V ICEX - 0.01 μA Emitter Cut-off Current VEB= 3.0V IC= 0 IEBO - 0.01 μA VCE= 10V IC= 500mA 40 - VCE= 10V IC= 150mA 100 300 VCE= 10V IC= 10mA VCE= 10V IC= 1mA VCE= 10V IC= 0.1mA DC current gain hFE 75 - 50 - 35 - Collector-Emitter saturation voltage IC= 500mA IB= 50mA VCE(sat) - 1.0 Base-Emitter saturation voltage IC= 500mA IB= 50mA VBE(sat) - 2.0 V f= 100MHz fT 300 - MHz IC= 20mA VCE= 20V Transition frequency V Output capacitance VCB= 10V IE = 0 f= 1.0MHz Cobo 8 pF Input capacitance VEB= 0.5V IC = 0 f= 1.0MHz Cibo 25 pF Delay time VCC=30V VBE(off) =-0.5V IC=150mA IB1=15mA td - 10 nS Rise time VCC=30V VBE(off) =-0.5V IC=150mA IB1=15mA tr - 25 nS Storage time VCC=30V IC=150mA IB1=-IB2=15mA ts - 225 nS Fall time VCC=30V IC=150mA IB1=-IB2=15mA tf - 60 nS Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T E A C F W B Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : A10 MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves 30 PD, POWER DISSIPATION (mW) 350 20 300 CAPACITANCE (pF) 250 200 150 100 Cibo 10 5.0 Cobo 50 0 0 1.0 25 50 75 100 150 125 1.0 0.1 200 175 REVERSE VOLTS (V) Fig. 2 Typical Capacitance TA , AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE = 1.0V 1 1 0.1 10 100 10 1 1000 100 VCE = 5V 1 IC , COLLECTOR CURRENT (mA) Fig.3 Typical DC Current Gain vs Collector Current 100 1.0 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C VBE(ON) , BASE EMITTER VOLTAGE (V) SATURATION VOLTAGE (V) 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Gain Bandwidth Product vs. Collector Current 0.5 VCE(SAT) , COLLECTOR TO EMITTER 50 10 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0 1 10 100 IC , COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1000 0.1 1 10 100 IC , COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current Version : A10