BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 2.80 3.00 0.110 0.118 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260°C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 F 0.90 1.20 0.035 0.043 Ordering Information Package Part No. Suggested PAD Layout Packing Marking SOT-23 BC856A RF 3K / 7" Reel 3A SOT-23 BC856B RF 3K / 7" Reel 3B SOT-23 BC857A RF 3K / 7" Reel 3E SOT-23 BC857B RF 3K / 7" Reel 3F 2.0 SOT-23 BC857C RF 3K / 7" Reel 3G 0.079 SOT-23 BC858A RF 3K / 7" Reel 3J SOT-23 BC858B RF 3K / 7" Reel 3K SOT-23 BC858C RF 3K / 7" Reel 3L SOT-23 BC856A RFG 3K / 7" Reel 3A SOT-23 BC856B RFG 3K / 7" Reel 3B SOT-23 BC857A RFG 3K / 7" Reel 3E SOT-23 BC857B RFG 3K / 7" Reel 3F SOT-23 BC857C RFG 3K / 7" Reel 3G SOT-23 BC858A RFG 3K / 7" Reel 3J SOT-23 BC858B RFG 3K / 7" Reel 3K SOT-23 BC858C RFG 3K / 7" Reel 3L 0.95 0.037 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range BC856 BC857 BC858 BC856 BC857 BC858 Symbol Value Units PD mW VEBO 250 -80 -50 -30 -65 -45 -30 -5 IC -0.1 A TJ, TSTG -55 to + 150 °C VCBO VCEO V V V Notes:1. Valid provided that electrodes are kept at ambient temperature Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Symbol BC856 BC857 BC858 BC856 BC857 BC858 Min -80 -50 -30 -65 -45 -30 Max Units - V - V IC= -10μA IE= 0 V(BR)CBO IC= -10mA IB= 0 V(BR)CEO Emitter-Base Breakdown Voltage IE= -1μA IC= 0 V(BR)EBO -5 - V Collector Cut-off Current VCB= -30V IE= 0 ICBO - -15 nA Emitter Cut-off Current VEB= -5V IC=0 IEBO - -0.1 μA VCE= -5V IC= -2mA hFE 125 220 420 250 475 800 IC= -100mA IB= -5mA VCE(sat) - -0.65 IC= -100mA IB= -5mA VBE(sat) - -1.1 V fT 100 - MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE= -5V Transition frequency IC= -10mA f= 100MHz V Tape & Reel specification Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T E A C Symbol A B C d D D1 D2 E F P0 P1 T W W1 F W B W1 D D2 D1 Direction of Feed Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 1. Static Characteristic Figure 2. DC Current Gain -50 1000 IB = - 400µ A IB = - 350µA -40 VCE = - 5V IB = - 300µA -35 IB = - 250µA -30 IB = - 200µA -25 IB = - 150µA -20 IB = - 100µA -15 -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 IB = - 50µA -5 10 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 -100 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Figure 4. Base-Emitter On Voltage -10 -100 IC = 10 IB -1 V BE(sat) -0.1 VCE(sat) -0.01 -0.1 VCE = - 5V -10 -1 -0.1 -1 -10 -100 -0.2 -0.4 IC[mA], COLLECTOR CURRENT 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE -0.8 -1.0 -1.2 Figure 6. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 10 -0.6 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Cob[pF], CAPACITANCE -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -0 1000 f=1MHz IE=0 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Version : E11 BC856A/B, BC857A/B/C, BC858A/B/C 250mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Figure 7. DC current gain as a function of collector current; typical values hFE-IC Figure 8. Base-emitter voltage as a function of collector current; typical values VBE-IC Version : E11