TSC TSM2311CXRF

TSM2311
20V P-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Gate
2. Source
3. Drain
-20
Features
ID (A)
55 @ VGS = -4.5V
-4.0
85 @ VGS = -2.5V
-2.5
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
P-Channel MOSFET
Ordering Information
Part No.
TSM2311CX RF
TSM2311CX RFG
Package
Packing
SOT-23
SOT-23
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-4
A
IDM
-20
A
IS
-0.72
A
Continuous Drain Current, VGS @ 4.5V.
Pulsed Drain Current, VGS @ 4.5V
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
0.57
+150
o
TJ, TSTG
- 55 to +150
o
Symbol
Limit
TL
5
TJ
Operating Junction and Storage Temperature Range
0.9
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. Surface Mounted on FR4 Board,
1/6
RӨJA
250
Unit
S
o
C/W
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-0.6
--
-1.4
V
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -16V, VGS = 0V
IDSS
--
--
-1.0
µA
On-State Drain Current
VDS ≥-10V, VGS = -5V
ID(ON)
-6
--
--
A
Drain-Source On-State
VGS = -4.5V, ID = -4A
--
45
55
--
75
85
Zero Gate Voltage Drain Current
a
a
Resistance
Forward Transconductance
VGS = -2.5V, ID = -2.5A
a
Diode Forward Voltage
RDS(ON)
mΩ
VDS = -5V, ID = -4A
gfs
--
9
--
S
IS = -0.75A, VGS = 0V
VSD
--
- 0.8
-1.2
V
Qg
--
6
9
Qgs
--
1.4
--
Qgd
--
1.9
--
Ciss
--
640
--
Coss
--
180
--
Crss
--
90
--
td(on)
--
22
35
tr
--
35
55
td(off)
--
45
70
--
25
50
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = -6V, ID = -4A,
VGS = -4.5V
VDS = -6V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -6V, RL = 6Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
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nS
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B11
TSM2311
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
11 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: B11
TSM2311
20V P-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Version: B11