TSC TSM9409_13

TSM9409
60V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
-60
Features
ID (A)
155 @ VGS = -10V
-3.5
200 @ VGS = 4.5V
-3.1
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM9409CS RLG
SOP-8
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
P-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
ID
-3.5
A
IDM
-30
A
IS
-2.5
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
TA = 25 C
PD
o
TA = 70 C
Operating Junction Temperature
W
2.1
+150
o
TJ, TSTG
- 55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
3.0
C
C
Thermal Performance
Parameter
Unit
Junction to Case Thermal Resistance
RӨJC
30
o
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
50
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
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Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-1.0
--
--
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -60V, VGS = 0V
IDSS
--
--
-1.0
µA
VDS =-5V, VGS = -10V
ID(ON)
-20
--
--
A
--
125
155
--
153
200
Zero Gate Voltage Drain Current
a
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Diode Forward Voltage
VGS = -10V, ID = -3.5A
VGS = -4.5V, ID = -3.1A
RDS(ON)
mΩ
VDS = -15V, ID = -3.5A
gfs
--
8
--
S
IS = -2.5A, VGS = 0V
VSD
--
-1.25
-1.5
V
Qg
--
6
--
Qgs
--
1.7
--
Qgd
--
1.5
--
Ciss
--
540
--
Coss
--
60
--
Crss
--
30
--
td(on)
--
7
--
tr
--
9
--
td(off)
--
19
--
--
4
--
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = -15V, ID = -3.5A,
VGS = -10V
Input Capacitance
Output Capacitance
VDS = -30V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switching
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
nS
Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B13
TSM9409
60V P-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: B13
TSM9409
60V P-Channel MOSFET
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6/6
Version: B13