UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.1Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-T Package TO-3P TO-220F1 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 6 QW-R502-218.D 10N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°С) ID 10 A Pulsed Drain Current (Note 2) IDM 40 A Avalanche Current (Note 2) IAR 10 A Single Pulsed (Note 3) EAS 920 mJ Avalanche Energy 24 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation W TO-220F1 36 PD TO-3P 1.92 °С/W Linear Derating Factor above TC = 25°С TO-220F1 0.288 Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25Ω, Satarting TJ=25°C 4. ISD ≤ 10 A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-3P TO-220F1 TO-3P TO-220F1 θJA θJC RATINGS 40 62.5 0.52 3.47 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate-Body Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge IGSS ΔBVDSS/ΔTJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS =0 V, ID =250 µA VDS =800V, VGS =0 V VDS =640V, TC =125°C VDS =0 V, VGS = ±30 V MIN VDS =25V, VGS =0V, f=1MHz VDD=400V, ID=10.0A, RG=25Ω(Note 1,2) VDS =640V, VGS =10V, ID =10.0A (Note 1,2) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 800 V 10 100 ±100 ID =250 µA, Referenced to 25°C VDS =VGS, ID =250 µA VGS = 10 V, ID = 5.0 A TYP 0.98 3.0 0.93 nA mV/°С 5.0 1.1 2150 2800 180 230 15 20 50 130 90 80 45 13.5 17 µA 110 270 190 170 58 V Ω pF pF pF ns nC 2 of 6 QW-R502-218.D 10N80 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=10.0 A,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, dIF /dt = 100 A/µs, Reverse Recovery Time tRR IS = 10.0 A (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.4 V 10.0 A 40.0 730 10.9 ns nC 3 of 6 QW-R502-218.D 10N80 Power MOSFET TEST CIRCUIT Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Time Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-218.D 4 of 6 10N80 Power MOSFET TEST CIRCUIT(Cont.) + D.U.T. VDS + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 6 QW-R502-218.D 10N80 Power MOSFET TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 5 10 8 4 6 3 4 2 2 1 VGS=10V, ID=5A 0 0 0 200 400 600 800 Source to Drain Voltage,VSD (mV) 0 1000 2 3 5 4 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 3 400 2.5 350 300 2 250 1.5 200 150 1 100 0.5 0 1 Drain to Source Voltage, VDS (V) 50 0 1 2 3 Gate Threshold Voltage,VTH (V) 4 0 0 200 400 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-218.D