UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. FEATURES * RDS(ON)<8mΩ @VGS=10V * Ultra Low Gate Charge ( 146nC max ) * Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3205L-TA3-T UF3205G-TA3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 5 QW-R502-304.A UF3205 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT ±20 V Gate-Source Voltage VGSS Continuous (VGS=10V) ID 110 Drain Current A Pulsed (Note 2) IDM 390 Avalanche Current (Note 2) IAR 62 A Repetitive(Note 2) EAR 20 Avalanche Energy mJ Single Pulsed(Note 3) EAS 1050 Power Dissipation (TC=25°C) PD 200 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. TJ=25°C, L=138μH, RG=25Ω, IAS=62A THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC MIN TYP MAX 62 0.75 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA Drain-Source Leakage Current IDSS VDS=55V,VGS=0V Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V Breakdown Voltage Temperature △BVDSS/△TJ Reference to 25°C, ID=1mA Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-Resistance (Note) RDS(ON) VGS=10V, ID=62A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate Source Charge QGS VDS=44V, ID=62A, VGS=10V Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=28V, ID=62A, RG=4.5Ω, VGS=10V (Note) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Internal Drain Inductance LD Internal Source Inductance LS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=62A ,VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR IF=62A, dI/dt=100A/μs (Note) Body Diode Reverse Recovery Charge QRR Note: Pulse width≤400μs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 55 25 ±100 V/°C 0.057 2.0 4.0 8.0 V mΩ pF pF pF 3247 781 211 146 35 54 nC nC nC ns ns ns ns nH nH 1.3 V 110 A 390 A 104 215 ns nC 14 101 50 65 4.5 7.5 69 143 V μA nA 2 of 5 QW-R502-304.A UF3205 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-304.A UF3205 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR 2A Switching Test Circuit 2B Switching Waveforms QG VGS QGS QGD VD Charge 3A Gate Charge Test Circuit 3B Gate Charge Waveform BVDSS ID(t) VDS(t) VDD IAS tp 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4B Unclamped Inductive Switching Waveforms 4 of 5 QW-R502-304.A UF3205 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 200 150 100 50 50 0 10 20 30 40 50 60 70 0 Drain-Source Breakdown Voltage, BVDSS(V) 0 0 Drain-Source On-State Resistance Characteristics 20 1.0 1.5 2.0 2.5 3.0 0.5 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 12 10 Drain Current, ID (A) 16 Drain Current, ID (A) Drain Current vs. Gate Threshold Voltage 12 8 4 8 6 4 2 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) 0 0 0.4 0.6 0.8 1.0 0.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-304.A