UNISONIC TECHNOLOGIES CO., LTD UT108N03 Power MOSFET 30V, 108A N-CHANNEL POWER MOSFET 1 DESCRIPTION As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. 1 TO-251 FEATURES * RDS(ON) = 5.3mΩ @VGS = 10 V * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified TO-252 1 TO-220 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT108N03L-TA3-T UT108N03G-TA3-T UT108N03L-TM3-T UT108N03G-TM3-T UT108N03L-TN3-R UT108N03G-TN3-R UT108N03L-TN3-T UT108N03G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube 1 of 3 QW-R502-197.H UT108N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current ID 108 A Pulsed Drain Current (Note 2) IDM 432 A Avalanche Energy (Note 3) EAS 580 mJ TO-220 107 Power Dissipation PD W TO-251/TO-252 60 Junction Temperature TJ +150 °C Strong Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. tP≤10μs, pulsed, TA=25°C 3. VGS=10V, TJ=25°C, ID=35A, VS≤25V, tP=0.25ms, RGS=50Ω THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-251/TO-252 SYMBOL θJA θJC RATINGS 62.5 100 1.4 2.5 UNIT °C /W °C /W °C /W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=30V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) VDS=VGS, ID=1mA VGS=10V, ID=25A VGS=5V, ID=25A 1 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD =15V, VGS =5V, ID =40A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=15V, RG=10Ω, VGS=5V, RD=0.6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=108A, VGS=0 V Maximum Pulsed Drain-Source Diode ISM (Note) Forward Current Body Diode Reverse Recovery Time trr IS=20A, dIS/dt=-100A/μs, VGS=0V Body Diode Reverse Recovery Charge QRR Note: tP≤10μs, pulsed UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.05 0.02 1 100 V µA nA 4.2 3 5.3 6.6 V mΩ mΩ 3200 580 400 pF pF pF 56 16 14 24 102 53 54 nC nC nC ns ns ns ns 34 27 1.25 V 432 A ns nC 2 of 3 QW-R502-197.H UT108N03 Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage 1000 Drain Current, ID (µA) Drain Current, ID (µA) 250 Drain Current vs. Gate Threshold Voltage 1200 200 150 100 50 800 600 400 200 0 0 0 20 30 40 50 10 Drain-Source Breakdown Voltage, BVDSS(V) 1 2 1.5 0.5 Gate Threshold Voltage, VTH (V) 2.5 Drain Current, ID (A) Drain Current, ID (A) 0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-197.H