MMBT5401

UNISONIC TECHNOLOGIES CO., LTD
MMBT5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR

FEATURES
*Collector-Emitter Voltage: VCEO=-150V
*High Current Gain

ORDERING INFORMATION
Ordering Number
Note:

MMBT5401G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMBT5401

PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-160
V
Collector -Emitter Voltage
VCEO
-150
V
Emitter -Base Voltage
VEBO
-5
V
DC Collector Current
IC
-600
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
Output Capacitance
fT
COB
Noise Figure
NF
TEST CONDITIONS
IC=-100A, IE=0
IC=-1mA, IB=0
IE=-10A, IC=0
VCB=-120V, IE=0
VBE=-3V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1k, f=10Hz ~ 15.7kHz
MIN
-160
-150
-5
TYP
MAX
-50
-50
80
80
80
100
160
UNIT
V
V
V
nA
nA
400
-0.2
-0.5
-1
-1
300
6.0
MHz
pF
8
dB
V
V
Note: Pulse test: PW<300s, Duty Cycle<2%

CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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PNP SILICON TRANSISTOR
■ TYPICAL CHARACTERICS
Fig.2 DC Current Gain
Fig.1 Collector Output Capacitance
3
10
Capacitance, Cob (pF)
20
VCE=-5V
16
DC Current Gain, hFE
f=1MHz
IE=0
12
8
4
1
-10
1
10
0
10
0
0
-10
2
10
2
-10
-1
-10
Saturation Voltage, VBE(SAT) VCE(SAT) (V)
Collector Current, Ic (mA)
VCE=-5V
1
-10
0
-10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base-Emitter Voltage, VBE (V)
2
-10
3
-10
Fig.4 Saturation Voltage
Fig.3 Base-Emitter on Voltage
2
-10
1
-10
Collector Current, Ic (mA)
Collector-Base Voltage, VCB (V)
3
-10
0
-10
1
-10
Ic=10*IB
VBE(SAT)
0
-10
-1
-10
VCE(SAT)
-2
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector Current, Ic (mA)
Current Gain-Bandwidth Product,
fT(MHz)
Fig.5 Current Gain-Bandwidth
Product
3
10
VCE=-10V
2
10
1
10
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT5401
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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