UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ≤3.0 pF (VCB=30V) fT ≥50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-126 TO-126C Pin Assignment 1 2 3 E C B E C B Packing Bulk Bulk 1 of 5 QW-R204-023,C 2SC2688 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current RATINGS UNIT 300 V 300 V 5.0 V 200 mA Ta=25℃ 1.25 W Total Power Dissipation PD TC=25℃ 10 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL Collector Saturation Voltage VCE(SAT) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Feedback Capacitance Cre Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2% SYMBOL VCBO VCEO VEBO IC TEST CONDITIONS IC=20mA, IB=5.0mA VCB=200V, IE=0 VEB=5.0V, IC=0 VCE=10V, IC=10mA (Note 1) VCE=30V, IE=-10mA VCB=30V, IE=0, f=1.0MHz MIN TYP 40 50 80 80 MAX 1.5 100 100 250 UNIT V nA nA MHz pF 3 CLASSIFICATION OF hFE Rank Range N 40 ~ 80 M 60 ~ 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw L 100 ~ 200 K 160 ~ 250 2 of 5 QW-R204-023,C 2SC2688 NPN SILICON TRANSISTOR BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R204-023,C 2SC2688 Total Power Dissipation, PD (W) Total Power Dissipation, PD (W) TYPICAL CHARACTERISTICS (Ta=25℃) Collector Current, IC (mA) Collector Current, IC (mA) NPN SILICON TRANSISTOR Collector Current vs. Base to Emitter Voltage 70 VCE=10V 60 DC Current Gain vs. Collector Current VCE=10V 50 200 100 40 50 30 10 5 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 0.1 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA) 4 of 5 QW-R204-023,C 2SC2688 Gain Bandwidth Product, fT (MHz) Base Saturation Voltage, VBE (SAT) (V) Collector Saturation Voltage, VCE (SAT) (V) TYPICAL CHARACTERISTICS Feedback Capacitance, Cre (pF) NPN SILICON TRANSISTOR Feedback Capacitance vs.Collector to Base Voltage IE=0 f=1MHz 10 5 1 1 5 10 50 100 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-023,C