UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1802L-x-TM3-T 2SD1802G-x-TM3-T 2SD1802L-x-TN3-T 2SD1802G-x-TN3-T 2SD1802L-x-TN3-R 2SD1802G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tape Reel 1 of 3 QW-R209-001.Ba 2SD1802 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA= 25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Power Dissipation 1 Pc W TC=25℃ 15 Collector Current (DC) IC 3 A Collector Current (PULSE) ICP 6 A Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃. ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current SYMBOL ICBO IEBO hFE1 hFE2 fT COB VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO tON tSTG tF DC Current Gain (note) Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-on Time Storage Time Fall Time TEST CONDITIONS VCB=40V, IE =0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=3A VCE=10V, IC=50mA VCB=10V, f=1MHz IC= 2A, IB=100mA IC= 2A, IB=100mA IC= 10μA, IE=0 IC= 1mA, RBE=∞ IE= 10μA, IC=0 See test circuit See test circuit See test circuit MIN TYP 100 35 150 25 0.19 0.94 MAX 1 1 560 0.5 1.2 60 50 6 70 650 35 UNIT μA μA MHz pF V V V V V ns ns ns CLASSIFICATION OF hFE1 RANK RANGE R 100-200 S 140-280 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw T 200-400 U 280-560 2 of 3 QW-R209-001.Ba 2SD1802 NPN SILICON TRANSISTOR TEST CIRCUIT (Unit : resistance : Ω, capacitance : F) PW=20µS Duty Cycle≤1% I B1 INPUT RB OUTPUT I B2 50 25 VR + 100µ -5V + 470µ 25V Ic=10IB1= -10IB2=1A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-001.Ba