Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SD1802
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION

DESCRIPTION
The UTC 2SD1802 applies to voltage regulators, relay drivers,
lamp drivers and electrical equipment.

FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD1802L-x-TM3-T
2SD1802G-x-TM3-T
2SD1802L-x-TN3-T
2SD1802G-x-TN3-T
2SD1802L-x-TN3-R
2SD1802G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter

Package
TO-251
TO-252
TO-252
1
B
B
B
Pin Assignment
2
3
C
E
C
E
C
E
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-001.C
2SD1802

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA= 25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Power Dissipation
1
PC
W
TC=25℃
15
Collector Current (DC)
IC
3
A
Collector Current (PULSE)
ICP
6
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
ICBO
IEBO
hFE1
hFE2
fT
COB
VCE(SAT)
VBE(SAT)
V(BR)CBO
V(BR)CEO
V(BR)EBO
tON
tSTG
tF
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
Storage Time
Fall Time

TEST CONDITIONS
VCB=40V, IE =0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC= 2A, IB=100mA
IC= 2A, IB=100mA
IC= 10A, IE=0
IC= 1mA, RBE=
IE= 10A, IC=0
See test circuit
See test circuit
See test circuit
MIN
TYP
100
35
150
25
0.19
0.94
MAX
1
1
560
0.5
1.2
60
50
6
70
650
35
UNIT
μA
μA
MHz
pF
V
V
V
V
V
ns
ns
ns
CLASSIFICATION OF hFE1
RANK
RANGE
R
100-200
S
140-280
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
T
200-400
U
280-560
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QW-R209-001.C
2SD1802

NPN SILICON TRANSISTOR
TEST CIRCUIT (Unit : resistance : Ω, capacitance : F)
PW=20µS
Duty Cycle≤1%
I B1
INPUT
RB
OUTPUT
I B2
50
25
VR
+
100µ
-5V
+
470µ
25V
Ic=10IB1= -10IB2=1A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-001.C